27 resultados para SrTiO


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Combining experiments with first-principles calculations, we show that site-specific doping of Mn into SrTiO(3) has a decisive influence on the dielectric properties of these doped systems. We find that phonon contributions to the dielectric constant invariably decrease sharply on doping at any site. However, a sizable, random dipolar contribution only for Mn at the Sr site arises from a strong off-centric displacement of Mn in spite of Mn being in a non-d(0) state; this leads to a large dielectric constant at higher temperatures and gives rise to a relaxor ferroelectric behavior at lower temperatures. We also investigate magnetic properties in detail and critically reevaluate the possibility of a true multiglass state in such systems.

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Homogeneous thin films of Sr(0.6)Ca(0.4)TiO(3) (SCT40) and asymmetric multilayer of SrTiO(3) (STO) and CaTiO(3) (CTO) were fabricated on Pt/Ti/SiO(2)/Si substrates by using pulsed laser deposition technique. The electrical behavior of films was observed within a temperature range of 153 K-373 K. A feeble dielectric peak of SCT40 thin film at 273 K is justified as paraelectric to antiferroelectric phase transition. Moreover, the Curie-Weiss temperature, determined from the epsilon'(T) data above the transition temperature is found to be negative. Using Landau theory, the negative Curie-Weiss temperature is interpreted in terms of an antiferroelectric transition. The asymmetric multilayer exhibits a broad dielectric peak at 273 K. and is attributed to interdiffusion at several interfaces of multilayer. The average dielectric constants for homogeneous Sr(0.6)Ca(0.4)TiO(3) films (similar to 650) and asymmetric multilayered films (similar to 350) at room temperature are recognized as a consequence of grain size effect. Small frequency dispersion in the real part of the dielectric constants and relatively low dielectric losses for both cases ensure high quality of the films applicable for next generation integrated devices. (C) 2011 Elsevier B.V. All rights reserved.

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A detailed investigation was made into the origin of photoluminescence in an alternate multilayer system of SrZrO(3) (SZO) and SrTiO(3) (STO) thin films. XRD and room-temperature PL studies revealed a high consistency with respect to improved crystallization at elevated temperatures. The photoluminescence behaviour of SZO/STO multilayered system consists in the superposition of independent photoluminescence emissions of both STO and SZO films. Based on the present results and on previous experimental and theoretical data, we propose that the origin of the photoluminescence emission results from structural disorder generated by the presence of distortions in the ideal constituent clusters of these materials. (c) 2009 Elsevier B.V. All rights reserved.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Im Rahmen dieser Arbeit wurden zwei verschiedene Systeme untersucht, deren verbindende Gemeinsamkeit in den verwendeten ortsauflösenden, spektroskopischen Messmethoden der Oberflächenanalytik, wie z.B. abbildendes XPS, Röntgennahkanten-Photoemissionsmikroskopie (XANES-PEEM) und Augerspektroskopie (AES) liegt. Im ersten Teil der Arbeit wurden Diamant-Nukleationsdomänen auf Ir/SrTiO3 untersucht und mit vorherrschenden Modellen aus der Literatur verglichen. Die Nukleationsdomänen, wie sie im Mikrowellen-induzierten CVD Prozess unter Verwendung der BEN Prozedur (bias-enhanced nucleation) entstehen, bilden die „Startschicht“ für ein heteroepitaktisches Wachstum einer hoch orientierten Diamantschicht. Sie entwickeln sich aber unter Bedingungen, unter denen 3D-Diamant abgetragen und weggeätzt wird. Mittels XANES-PEEM Messungen konnte erstmals die lokale Bindungsumgebung des Kohlenstoffs in den Nukleationsdomänen ortsaufgelöst aufgezeigt werden und aus AES Messungen ließ sich die Schichtdicke der Nukleationsdomänen abschätzen. Es zeigte sich, dass die Nukleationsdomänen Bereiche mit etwa 1 nm Dicke darstellen, in denen der Übergang von eine sp2-koordinierte amorphen Kohlenstoff- zu einer Diamantschicht mit hohem sp3 Anteil abläuft. Zur Erklärung des Nukleationsprozesses wurde auf das „Clustermodell“ von Lifshitz et al. zurückgegriffen, welches um einen wesentlichen Aspekt erweitert wurde. Die Stabilität der Nukleationsdomänen gegen die Ätzwirkung des Nukleationsprozesses auf Volumendiamant wird durch eine starke Wechselwirkung zwischen dem Diamant und dem Iridiumsubstrat erklärt, wobei die Dicke von etwa 1 nm als Maß für die Ausdehnung dieses Wechselwirkungsbereichs angesehen wird. Der zweite Teil der Arbeit beschäftigt sich mit der Charakterisierung präsolarer SiC-Körner und darin eingeschlossener Spurenelemente. Neben den Hauptelementen Si und C wurden auch Spinelle wie Chromit (FeCr2O4), Korund (Al2O3) und auch verschiedene Spurenelemente (z. B. Al, Ba und Y) nachgewiesen. Ferner wurden XPS-Linien bei Energien nachgewiesen, welche sich den Seltenen Erden Erbium, Thulium und Dysprosium zuordnen lassen. Aufgrund von Abweichungen zur Literatur bzgl. der ausgeprägten Intensität der XPS-Linien, wurde als alternative Erklärungsmöglichkeit für verschiedene Signale der Nachweis von stark schwefelhaltigen Körnern (z.B. so genannte „Fremdlinge“) mit Aufladungen von mehreren Volt diskutiert. Es zeigt sich, dass abbildendes XPS und XANES-PEEM Methoden zur leistungsfähigen chemischen Charakterisierung von SiC-Körnern und anderer solarer und präsolarer Materie im Größenbereich bis herab zu 100 – 200 nm Durchmesser (z.B. als Grundlage für eine spätere massenspektrometrische Isotopenanalyse)darstellen.

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We use density functional theory to explore the interplay between octahedral rotations and ferroelectricity in the model compound SrTiO3. We find that over the experimentally relevant range octahedral rotations suppress ferroelectricity as is generally assumed in the literature. Somewhat surprisingly, we observe that at larger angles the previously weakened ferroelectric instability strengthens significantly. By analyzing geometry changes, energetics, force constants and charges, we explain the mechanisms behind this transition from competition to cooperation with increasing octahedral rotation angle.

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Interplay of spin, charge, orbital and lattice degrees of freedom in oxide heterostructures results in a plethora of fascinating properties, which can be exploited in new generations of electronic devices with enhanced functionalities. The paradigm example is the interface between the two band insulators LaAlO3 and SrTiO3 that hosts a two-dimensional electron system. Apart from the mobile charge carriers, this system exhibits a range of intriguing properties such as field effect, superconductivity and ferromagnetism, whose fundamental origins are still debated. Here we use soft-X-ray angle-resolved photoelectron spectroscopy to penetrate through the LaAlO3 overlayer and access charge carriers at the buried interface. The experimental spectral function directly identifies the interface charge carriers as large polarons, emerging from coupling of charge and lattice degrees of freedom, and involving two phonons of different energy and thermal activity. This phenomenon fundamentally limits the carrier mobility and explains its puzzling drop at high temperatures.

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Surface properties such as physicochemical characteristics and topographical parameters of biomaterials, essentially determining the interaction between the biological cells and the biomaterial, are important considerations in the design of implant materials. In this study, a layer of SrTiO3-TiO2 nanoparticle-nanotube heterostructures on titanium has been fabricated via anodization combined with a hydrothermal process. Titanium was anodized to create a layer of titania (TiO2) nanotubes (TNTs), which was then decorated with a layer of SrTiO3 nanoparticles via hydrothermal processing. SrTiO3-TiO2 heterostructures with high and low volume fraction of SrTiO3 nanoparticle (denoted by 6.3-Sr/TNTs and 1.4-Sr/TNTs) were achieved by using a hydrothermal processing time of 12 and 3 h, respectively. The in vitro biocompatibility of the SrTiO3-TiO2 heterostructures was assessed by using osteoblast cells (SaOS2). Our results indicated that the SrTiO3-TiO2 heterostructures with different volume fractions of SrTiO3 nanoparticles exhibited different Sr ion release in cell culture media and different surface energies. An appropriate volume fraction of SrTiO3 in the heterostructures stimulated the secretion of cell filopodia, leading to enhanced biocompatibility in terms of cell attachment, anchoring, and proliferation on the heterostructure surface.

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Fine powders of semiconductor oxides have been widely used as photocatalysts for many reactions. Among the various photocatalytic reactions, water splitting has been given much importance, since it is a promising chemical route for solar energy conversion. Perovskite oxides, in particular SrTiO, have been commonly used as photocatalysts because some of them can decompose H,O into H, and 0, without an external bias potential (1). In turn, this is because the conduction band (CB) edges of some of the perovskite oxides are more negative than the H+/H, energy level. Since the catalytic activity is related to the surface properties of the solids, fine powders rather than single crystals are used. Photocatalysis on fine powers can be conveniently discussed in three parts, viz. preparation, characterization and their catalytic activity. Presently, photo-decomposition of water using SrTiO, fine powders is discussed in greater detail, although other photocatalytic reactions on various perovskite oxides are also briefly dealt with.

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用脉冲激光淀积法(PLD)在(111)面SrTiO3衬底上外延生长ZnO单晶薄膜。样品分别在衬底温度为350℃、500℃、600℃下外延生长。X射线衍射(XRD)的结果表明,所得的ZnO单晶薄膜结晶性能好,只出现(002)和(004)两个衍射峰,(002)峰的半高宽度(FWHM)为0.23°。在荧光光谱中我们只观察到来源于带边激子跃迁的强UV发射,并且随着生长温度的升高,紫外峰的强度逐渐增强。样品的SEM图像表明所得ZnO薄膜表面平整,晶粒均匀。衬底温度为600℃时,所得到的ZnO薄膜结构完整,晶粒尺寸最

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Atomic force microscopy (AFM) was applied to study the surface morphology of SrTiO3 substrates which were polished by traditional mechanical and chemical mechanical method respectively. The influence of anneal was also studied. Results show that the RMS of CMP STO substrates can be 0.214 nm. Compared the rocking curve of the unannealed STO substrates with the annealed ones, it indicates that anneal can improve the crystal quality.

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We report on electrical transport measurements at high current densities on optimally doped YBa 2Cu 3O 7-δ thin films grown on vicinal SrTiO 3 substrates. Data were collected by using a pulsed-current technique in a four-probe arrangement, allowing to extend the current-voltage characteristics to high supercritical current densities (up to 24 MA cm -2) and high electric fields (more than 20 V/cm), in the superconducting state at temperatures between 30 and 80 K. The electric measurements were performed on tracks perpendicular to the vicinal step direction, such that the current crossed between ab planes, under magnetic field rotated in the plane defined by the crystallographic c axis and the current density. At magnetic field orientation parallel to the cuprate layers, evidence for the sliding motion along the ab planes (vortex channeling) was found. The signature of vortex channeling appeared to get enhanced with increasing electric field, due to the peculiar depinning features in the kinked vortex range. They give rise to a current-voltage characteristics steeper than in the more off-plane rectilinear vortex orientations, in the electric field range below approximately 1 V/cm. Roughly above this value, the high vortex channeling velocities (up to 8.6 km/s) could be ascribed to the flux flow, although the signature of ohmic transport appeared to be altered by unavoidable macroscopic self-heating and hot-electron-like effects. © 2012 Elsevier B.V. All rights reserved.

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Permittivity peaks in single crystal thin film capacitors are strongly suppressed compared to bulk in the case of Pt/SrTiO(3)/Pt, but are relatively unaffected in Pt/BaTiO(3)/Pt structures. This is consistent with the recent suggestion that subtle variations in interfacial bonding between the dielectric and electrode are critical in determining the presence or absence of inherent dielectric "dead layers".

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Epitaxial tetragonal 425 and 611 nm thick Pb(ZrTi)O (PZT) films are deposited by pulsed laser deposition on SrRuO-coated (100) SrTiO 24° tilt angle bicrystal substrates to create a single PZT grain boundary with a well-defined orientation. On either side of the bicrystal boundary, the films show square hysteresis loops and have dielectric permittivities of 456 and 576, with loss tangents of 0.010 and 0.015, respectively. Using piezoresponse force microscopy (PFM), a decrease in the nonlinear piezoelectric response is observed in the vicinity (720-820 nm) of the grain boundary. This region represents the width over which the extrinsic contributions to the piezoelectric response (e.g., those associated with the domain density/configuration and/or the domain wall mobility) are influenced by the presence of the grain boundary. Transmission electron microscope (TEM) images collected near and far from the grain boundary indicate a strong preference for (101)/(1-01) type domain walls at the grain boundary, whereas (011)/(01-1) and (101)/(1-01) are observed away from this region. It is proposed that the elastic strain field at the grain boundary interacts with the ferro-electric/elastic domain structure, stabilizing (101)/(1-01) rather than (011)/(01-1) type domain walls, which inhibits domain wall motion under applied field and decreases non-linearity. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.