Filmes finos de SrBi2Ta2O9 processados em forno microondas

Filmes finos de SrBi2Ta2O9 foram depositados em substratos de Pt/Ti/SiO2/Si e, pela primeira vez, sinterizados em forno microondas doméstico. Os padrões de difração de raios X mostraram que os filmes são policristalinos. O processamento por microondas permite utilizar baixa temperatura na síntese e obter filmes com boas propriedades elétricas. Ensaios de microscopia eletrônica de varredura (MEV) e de Força Atômica (MFA) revelam boa aderência entre filme e substrato, com microestrutura de superfície apresentando grãos finos e esféricos e rugosidade de 4,7 nm. A constante dielétrica e o fator de dissipação, para freqüência de 100 KHz, à temperatura ambiente, foram de 77 e 0,04, respectivamente. A polarização remanescente (2Pr) e o campo coercitivo (Ec) foram 1,04 miC/cm² e 33 kV/cm. O comportamento da densidade de corrente de fuga revela três mecanismos de condução: linear, ôhmico e outro mecanismo que pode ser atribuído à corrente de Schottky. Dos padrões de DRX, análises das imagens por MEV e topografia de superfície por MFA observa-se que 10 min de tratamento térmico a 550 ºC, em forno microondas, é tempo suficiente para se obter a cristalização do filme.

Ferroelectric and microstructural characteristics of SrBi2Ta2O9 thin films crystallized by the rapid thermal annealing process

Ferroelectric SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si were successfully synthesized by the modified polymeric precursor method. The films were deposited by spin coating and crystallized by rapid thermal annealing in a halogen lamp furnace, followed by postannealing at temperatures ranging from 700 degreesC to 800 degreesC in an oxygen atmosphere. Microstructural and phase evaluations were followed by x-ray diffraction and atomic force microscopy. The films displayed spherical grain structures with a superficial roughness of approximately 3-6 nm. The dielectric constant values were 121 and 248 for films treated at 700 degreesC and 800 degreesC, respectively. The P-E curve showed a voltage shift toward the positive side, which was attributed to crystallization under the halogen illumination. The remanent polarization (2P(r)) and coercive field (E-c) were 7.1 muC/cm(2) and 113 kV/cm, and 18.8 muC/cm(2) and 93 kV/cm for the films treated at 700 degreesC and 800 degreesC, respectively. (C) 2001 American Institute of Physics.

SrBi2Ta2O9 ferroelectric thick films prepared by electrophoretic deposition using aqueous suspension

SrBi2Ta2O9 ferroelectric thick films were prepared by electrophoretic deposition (EPD). For that, ceramic powders were prepared by chemical method in order to obtain compounds with chemical homogeneity. The polymeric precursor method was used for the synthesis of the SrBi2Ta2O9 powder. The crystallographic structure of the powder was examined by X-ray diffraction, and the surface area was determined by single point BET adsorption. The 0.03 vol.% suspension was formed by dispersing the powder in water using two different polymers as dispersants: an ester polyphosphate (C213) and an ammonium polyacrilate (Darvan 821-A). It was investigated the influence of the different dispersants in the surface properties of the powder by zeta potential measurements. The films were deposited on platinum-coated alumina and Pt/Ti/SiO2/Si substrates by a 4 mA constant current, for 10 min, using two parallel electrodes placed at a separation distance of 3 min in the suspension. Several cycles of deposition-drying of the deposit were carried out until reaching the desired thickness. After thermal treatment at temperatures ranging from 700 to 1000 degreesC, the films were characterized by X-ray diffraction and scanning electron microscopy for the microstructure observation. (C) 2003 Elsevier Ltd. All rights reserved.

Low temperature crystallization of SrBi2Ta2O9 thin films using microwave oven

SrBi2Ta2O9 thin films, produced by the polymeric precursor method, were crystallized at low temperature using a domestic microwave oven. A SiC susceptor were used to absorb the microwave energy and rapidly transfer the heat to the film. Low microwave power and short time have been used. The films thus obtained are crack-free, well-adhered, and fully crystallized, even when treated at 600 degreesC for 10 min. The microstructure displayed a polycrystalline nature with an elongate grain size comparable to the films obtained by the conventional treatment. The dielectric constant values are 240, 159 and 67, for the films treated at 600 degreesC, 650 degreesC and 700 degreesC, respectively, when the films are placed directly on the SiC susceptor. Electrical measurements revealed that the increase of the temperature treatment to 700 degreesC causes a complete loss of ferroelectricity due to degradation of the bottom interface. A 4 nun-ceramic wool put between the susceptor and the substrate minimizes the interface degradation leading to a dielectric constant, a dielectric loss, and a remnant polarization (2P(r)) of 181 muC/cm(2), 0.032 muC/cm(2), and 12.8 muC/cm(2), respectively, for a film treated at 750 degreesC for 20 min. (C) 2004 Elsevier B.V. All rights reserved.

Preparation of SrBi2Ta2O9 ferroelectric thick films by electrophoretic deposition using aqueous suspensions

SrBi2Ta2O9 ferroelectric thick films were prepared by electrophoretic deposition (EPD). For that, ceramic powders were prepared by chemical method in order to obtain compounds with chemical homogeneity. The polymeric precursor method was used for the synthesis of the SrBi2Ta2O9 powder. The crystallographic structure of the powder was examined by X-ray diffraction, and the surface area was determined by single point BET adsorption. The 0.03 vol% suspension was formed by dispersing the powder in water using two different polymers as dispersants: an ester polyphosphate (C213) and an ammonium polyacrilate (Darvan 821-A). The influence of the different dispersants on the powder surface properties were investigated by zeta potential measurements. The films were deposited on platinum-coated alumina and Pt/Ti/SiO2/Si substrates by electrophoretic deposition using a 4 mA constant current, for 10 min, with two parallel electrodes placed at a separation distance of 3 min in the suspension. Several cycles of deposition-drying of the deposit was carried out until the desired thickness was obtained. After thermal treatment at temperatures ranging from 700 to 1000degreesC, the films were characterized by X-ray diffraction and scanning electron microscopy.

Crystallographic, dielectric and optical properties of SrBi2Ta2O9 thin films prepared by the polymeric precursor method

Strontium bismuth tantalate thin films were prepared on several substrates (platinized silicon (PvTi/SiO2/Si), n-type (100)-oriented and p-type (111)-oriented silicon wafers, and fused silica) by the solution deposition method. The resin was obtained by the polymeric precursor method, based on the Pechini process, using strontium carbonate, bismuth oxide, and tantalum ethoxide as starting reagents. Characterizations by XRD and SEM were performed for structural and microstructural evaluations. The electrical measurements, carried on the MFM configuration, showed P-r values of 6.24 muC/cm(2) and 31.5 kV/cm for the film annealed at 800 degreesC. The film deposited onto fused silica and treated at 700 degreesC presented around 80 % of transmittance.

Structural and electrical properties of SrBi2Nb2O9 thin films prepared by chemical aqueous solution at low temperature

SrBi2Nb2O9 (SBN) thin films were prepared by the polymeric precursors method and deposited by dip coating onto Pt/Ti/SiO2/Si(100) substrates. The dip-coated films were specular and crack-free and crystallized during firing at 700 degrees C. Microstructure and morphological evaluation were followed by grazing incident X-ray diffraction (GIXRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The films exhibited somewhat porous grain structure with rounded grains of about 100 nm. For the electrical measurements, gold electrodes of 300 mu m in diameter were sputter deposited on the top surface, forming a metal-ferroelectric-metal (MFM) configuration. The remanent polarization (P-r) and coercive field (E-c) were 5.6 mu C/cm(2) and 100 kV/cm, respectively. (C) 1999 Elsevier B.V. B.V. All rights reserved.

Crystallographic, dielectric and optical properties of SrBi 2Ta2O9 thin films prepared by the polymeric precursor method

Strontium bismuth tantalate thin films were prepared on several substrates (platinized silicon (Pt/Ti/SiO 2 /Si), n -type (100)-oriented and p -type (111)-oriented silicon wafers, and fused silica) by the solution deposition method. The resin was obtained by the polymeric precursor method, based on the Pechini process, using strontium carbonate, bismuth oxide, and tantalum ethoxide as starting reagents. Characterizations by XRD and SEM were performed for structural and microstructural evaluations. The electrical measurements, carried on the MFM configuration, showed P r values of 6.24 μC/cm 2 and 31.5 kV/cm for the film annealed at 800 C. The film deposited onto fused silica and treated at 700 C presented around 80% of transmittance. © 2002 Taylor & Francis.

Estudo das propriedades físicas de sistemas ferroelétricos com estruturas tipo Aurivillius

Pós-graduação em Ciência dos Materiais - FEIS

In-situ-Präparation von komplexen supraleitenden und ferroelektrischen Heterostrukturen mittels gepulster Laser-Deposition

In der vorliegenden Arbeit ist die Konstruktion und der Aufbau eines Systems zur gepulsten Laserablation von dünnen Schichten beschrieben. Die hohe Flexibilität der Anlage wird ermöglicht durch einen sechsfach-Targethalter und eine Heizerkonstruktion, die einfachen Substrateinbau, hohe Temperaturhomogenität und einen zugänglichen Temperaturbereich von bis zu 1000°C erlaubt. Durch eine komplexe Laser-Optik, die eine homogene Energiedichte auf dem Target sicherstellt, wird eine optimale Filmqualität erreicht.Durch die Entwicklung einer zweistufigen Prozeßführung für Y-stabilisiertes ZrO2 wird eine Wachstumsbasis hoher kristalliner Qualität für funktionale Oxidschichten auf Silizium zur Verfügung gestellt. Es zeigt sich, daß die dielektrischen Eigenschaften der YSZ Schicht stark vom Sauerstoffgehalt, der Grenzflächenmorphologie sowie der Dicke der ersten Schicht abhängig sind. Basierend auf dieser Schicht wurde BaZrO3 als zusätzliche Pufferschicht für den Hochtemperatursupraleiter (HTSL) YBa2Cu3O7 ? untersucht. Unter Verwendung von SrTiO3 Substraten konnte die dielektrische Konstante von BaZrO3 zu ? ? 65 bestimmt sowie das Dispersionsverhalten mittels modifizierter Debye-Gleichungen erklärt werden. Vergleichende Messungen auf einkristallinen SrTiO3 Substraten zeigen eine erhöhte Übergangstemperatur von 90.2 K und eine wesentliche Verbesserung der Oberflächenrauhigkeit des HTSL von 2 nm (rms) durch die Verwendung von BaZrO3 Schichten hoher Qualität. Eine nur wenige Monolagen dicke zusätzliche BaZrO3 Pufferschicht auf YSZ-gepufferten Silizium Substraten verhindert die Ausbildung von ?9° rotierten YBCO Körnern, die üblicherweise bei der direkten Deposition auf YSZ beobachtet werden. Resistive Messungen mit Übergangstemperaturen oberhalb 89 K sind vergleichbar zu Ergebnissen, die für CeO2/YSZ Pufferschichtkombinationen erreicht werden. Durch kontinuierliche Gitteranpassung wurde eine neue Schichtabfolge YBCO/CeO2/YSZ/BaZrO3 für die Erzeugung bi-epitaxialer Korngrenzen-Josephson Kontake gefunden und deren Epitaxiebeziehungen geklärt. Eine in-situ deponierte Schichtabfolge zeigt mit einer Übergangstemperatur von 91.7 K und einer Übergangsbreite von 0.15 K supraleitende Eigenschaften vergleichbar zu den besten bisher auf diesem Gebiet erreichten Ergebnissen. Voruntersuchungen zur Realisierung eines Josephsonkontaktes mit dieser Schichtabfolge zeigen jedoch, daß die erreichten Eigenschaften für die technologische Anwendung nicht ausreichend sind.Die Verwendung einer YSZ/CeO2 Pufferschichtkombination ermöglicht die Herstellung von c Achsen orientiertem ferroelektrischem SrBi2Ta2O9 auf Silizium. Im Gegensatz hierzu führt die direkte Deposition auf Silizium zu polykristallinem SrBi2Ta2O9 oder zur Ausbildung der Pyrochlor Phase, wenn nur YSZ als Pufferschicht verwendet wird. Obwohl die Polarisierung von SrBi2Ta2O9 in der ab-Ebene liegt, konnte in MFIS Strukturen ein Speicherfenster von maximal 0.87 V beobachtet werden, was eine Verbesserung um nahezu einen Faktor drei im Vergleich zu polykristallinem SrBi2Ta2O9 bedeutet. Messungen an ferroelektrischen Kondesatorstrukturen ergeben Hystereseschleifen mit einer remanenten Polarisierung von Pr = 6.5 µC/cm2 sowie einem Koerzitivfeld von Ec = 35 kV/cm. AFM Messungen im Piezo-Response Modus zeigen ferroelektrische Domänen, die durch Anlegen einer Gleichspannung reversibel umpolarisiert werden können. Im Nicht-Kontakt AFM Modus wurde die lokale Polarisierung der Schichten zu 3.4 µC/cm2 bestimmt. Weiterhin wurde eine alternative Pufferschichtkombination SrZrO3/YSZ zur Erzeugung von a-Achsen orientiertem SrBi2Ta2O9 untersucht. SrZrO3 zeigt a Achsen Orientierung in vier Wachstumsdomänen, die durch ein Model erklärt werden können. Die SrBi2Ta2O9 Schicht zeigt a Achsen sowie (116)-orientierte Körner mit derselben Domänenstruktur. Die dielektrische Konstanten von SrZrO3 und SrBi2Ta2O9 wurden zu ? ? 29 und ? ? 20 bestimmt. Die beobachteten Speicherfenster sind allerdings nicht ferroelektrischer Natur, sondern wahrscheinlich durch mobile Ionen und Ladungsfangstellen in den Pufferschichten verursacht. Die stark abgesenkte dielektrische Konstante von SrBi2Ta2O9 kann durch die im Vergleich zu polykristallinem verkleinerte Korngröße erklärt werden.