Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100) substrates
| Data(s) |
01/07/2000
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| Resumo |
Epitaxial SrBi2Ta2O9 (SBT) thin films with well-defined (116) orientation have been grown by pulsed laser deposition on Si(100) substrates covered with an yttria-stabilized ZrO2 (YSZ) buffer layer and an epitaxial layer of electrically conductive SrRuO3. Studies on the in-plane crystallographic relations between SrRuO3 and YSZ revealed a rectangle-on-cube epitaxy with respect to the substrate. X-ray diffraction pole figure measurements revealed well defined orientation relations, viz. SBT(116)\\ SrRuO3(110)\\ YSZ(100)\\ Si(100), SBT[110]\\ SrRuO3[001], and SrRuO3[111]\\ YSZ[110]\\ Si[110]. |
| Identificador | |
| Idioma(s) |
eng |
| Direitos |
info:eu-repo/semantics/restrictedAccess |
| Fonte |
Visinoiu , A , Lee , H N , Senz , S , Pignolet , A , Hesse , D & Gosele , U 2000 , ' Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100) substrates ' Applied Physics A - Materials Science & Processing , vol 71 , no. 1 , pp. 101 . |
| Tipo |
article |
