Stable and metastable ferroelectric polarization analyzed by the ramp voltage technique

The study of the stable and the metastable ferroelectric polarization of poly(vinylidene fluoride), PVDF, was performed using two successive equal sign ramp voltages, mediated by a short-circuit period. Rates from 10 V/s up to 0.7 MV/s were used. Results showed that they follow different formation kinetics; that the stable part decreases for higher ramp voltage rates and its apparent coercive field increases.

Relation between charge carrier mobility and lifetime in organic photovoltaics

The relationship between charge carrier lifetime and mobility in a bulk heterojunction based organic solar cell, utilizing diketopyrrolopyrole- naphthalene co-polymer and PC71BM in the photoactive blend layer, is investigated using the photoinduced charge extraction by linearly increasing voltage technique. Light intensity, delay time, and temperature dependent experiments are used to quantify the charge carrier mobility and density as well as the temperature dependence of both. From the saturation of photoinduced current at high laser intensities, it is shown that Langevin-type bimolecular recombination is present in the studied system. The charge carrier lifetime, especially in Langevin systems, is discussed to be an ambiguous and unreliable parameter to determine the performance of organic solar cells, because of the dependence of charge carrier lifetime on charge carrier density, mobility, and type of recombination. It is revealed that the relation between charge mobility (μ) and lifetime (τ) is inversely proportional, where the μτ product is independent of temperature. The results indicate that in photovoltaic systems with Langevin type bimolecular recombination, the strategies to increase the charge lifetime might not be beneficial because of an accompanying reduction in charge carrier mobility. Instead, the focus on non-Langevin mechanisms of recombination is crucial, because this allows an increase in the charge extraction rate by improving the carrier lifetime, density, and mobility simultaneously. © 2013 AIP Publishing LLC.

I. A recirculating charged-couple device. II. The mercury selenide on N-silicon Schottky barrier

A recirculating charge-coupled device structure has been devised. Entrance and exit gates allow a signal to be admitted, recirculated a given number of times, and then examined. In this way a small device permits simulation of a very long shift register without passing the signal through input and output diffusions. An oscilloscope motion picture demonstrating degradation of an actual circulating signal has been made. The performance of the device in simulating degradation of a signal by a very long shift register is well fit by a simple model based on transfer inefficiency.

Electrical properties of the mercury selenide on n-type chemically-cleaned silicon Schottky barrier have been studied. Barrier heights measured were 0.96 volts for the photoresponse technique and 0.90 volts for the current-voltage technique. These are the highest barriers yet reported on n-type silicon.

Raman scattering study of vibrational modes and hole concentration in GaxMn1-xSb

The Raman scattering study of vibrational modes and hole concentration in a ferromagnetic semiconductor Ga1-xMnxSb grown by Mn ion implantation, deposition and post-annealing has been presented. The experiments are performed both in implanted and unimplanted regions before and after etching the samples. The Raman spectra measured from the unimplanted region show only GaSb-like phonon modes. On the other hand, the spectra measured from the implanted region show additional phonon modes approximately at 115, 152, 269, 437 and 659 cm(-1). The experimental results demonstrate that the extra modes are associated with surface defects, crystal disorder and blackish layer that is formed due to Mn ion implantation, deposition and annealing processes. Furthermore, we have determined the hole concentration as a function of laser probing position by modeling the Raman spectra using coupled mode theory. The contributions of GaSb-like phonon modes and coupled LO-phonon plasmon mode are taken into consideration in the model. The hole-concentration-dependent CLOPM is resolved in the spectra measured from the implanted and nearby implanted regions. The hole concentrations determined by Raman scattering are found to be in good agreement with those measured by the electrochemical capacitance-voltage technique.

Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers

摘要: In order to improve the total-dose radiation hardness of the buried oxide of separation by implanted oxygen silicon-on-insulator wafers, nitrogen ions were implanted into the buried oxide with a dose of 10(16)cm(-2), and subsequent annealing was performed at 1100 degrees C. The effect of annealing time on the radiation hardness of the nitrogen implanted wafers has been studied by the high frequency capacitance-voltage technique. The results suggest that the improvement of the radiation hardness of the wafers can be achieved through a shorter time annealing after nitrogen implantation. The nitrogen-implanted sample with the shortest annealing time 0.5 h shows the highest tolerance to total-dose radiation. In particular, for the 1.0 and 1.5 h annealing samples, both total dose responses were unusual. After 300-krad(Si) irradiation, both the shifts of capacitance-voltage curve reached a maximum, respectively, and then decreased with increasing total dose. In addition, the wafers were analysed by the Fourier transform infrared spectroscopy technique, and some useful results have been obtained.

Preparação e caracterização de compósitos polímero/cerâmica com potencial de aplicações médicas

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Behavior of triple-gate Bulk FinFETs with and without DTMOS operation

In this paper, the combination of the Dynamic Threshold (DT) voltage technique with a non-planar structure is experimentally studied in triple-gate FinFETs. The drain current, transconductance, resistance, threshold voltage, subthreshold swing and Drain Induced Barrier Lowering (DIBL) will be analyzed in the DT mode and the standard biasing configuration. Moreover, for the first time, the important figures of merit for the analog performance such as transconductance-over-drain current, output conductance. Early voltage and intrinsic voltage gain will be studied experimentally and through three-dimensional (3-D) numerical simulations for different channel doping concentrations in triple-gate DTMOS FinFETs. The results indicate that the DTMOS FinFETs always yield superior characteristic; and larger transistor efficiency. In addition, DTMOS devices with a high channel doping concentration exhibit much better analog performance compared to the normal operation mode, which is desirable for high performance low-power/low-voltage applications. (C) 2011 Elsevier Ltd. All rights reserved.

Data-driven Automatic Edge Sharpening

Sharpening is a powerful image transformation because sharp edges can bring out image details. Sharpness is achieved by increasing local contrast and reducing edge widths. We present a method that enhances sharpness of images and thereby their perceptual quality. Most existing enhancement techniques require user input to improve the perception of the scene in a manner most pleasing to the particular user. Our goal of image enhancement is to improve the perception of sharpness in digital images for human viewers. We consider two parameters in order to exaggerate the differences between local intensities. The two parameters exploit local contrast and widths of edges. We start from the assumption that color, texture, or objects of focus such as faces affect the human perception of photographs. When human raters are presented with a collection of images with different sharpness and asked to rank them according to perceived sharpness, the results have shown that there is a statistical consensus among the raters. We introduce a ramp enhancement technique by modifying the optimal overshoot in the ramp for different region contrasts as well as the new ramp width. Optimal parameter values are searched to be applied to regions under the criteria mentioned above. In this way, we aim to enhance digital images automatically to create pleasing image output for common users.

Harmonic elimination technique for a single-phase multilevel converter with unequal DC link voltage levels

Multilevel converters, because of the benefits they attract in generating high quality output voltage, are used in several applications. Various modulation and control techniques are introduced by several researchers to control the output voltage of the multilevel converters like space vector modulation and harmonic elimination (HE) methods. Multilevel converters may have a DC link with equal or unequal DC voltages. In this study a new HE technique based on the HE method is proposed for multilevel converters with unequal DC link voltage. The DC link voltage levels are considered as additional variables for the HE method and the voltage levels are defined based on the HE results. Increasing the number of voltage levels can reduce lower order harmonic content because of the fact that more variables are created. In comparison to previous methods, this new technique has a positive effect on the output voltage quality by reducing its total harmonic distortion, which must take into consideration for some applications such as uninterruptable power supply, motor drive systems and piezoelectric transducer excitation. In order to verify the proposed modulation technique, MATLAB simulations and experimental tests are carried out for a single-phase four-level diode-clamped converter.

Mitigation of distorted and unbalanced stator voltage of stand-alone doubly fed induction generators using repetitive control technique

Unbalanced or non-linear loads result in distorted stator currents and electromagnetic torque pulsations in stand-alone doubly fed induction generators (DFIGs). This study proposes the use of a proportional-integral repetitive control (PIRC) scheme so as to mitigate the levels of harmonic and unbalance at the stator terminals of the DFIG. The PIRC is structurally simpler and requires much less computation than existing methods. Analysis of the PIRC operation and the methodology to determine the control parameters is included. Simulation study as well as laboratory test measurements demonstrate clearly the effectiveness of the proposed PIRC control scheme.

A Gibbs-ensemble based technique for Monte Carlo simulation of electric double layer capacitors (EDLC) at constant voltage

Current methods for molecular simulations of Electric Double Layer Capacitors (EDLC) have both the electrodes and the electrolyte region in a single simulation box. This necessitates simulation of the electrode-electrolyte region interface. Typical capacitors have macroscopic dimensions where the fraction of the molecules at the electrode-electrolyte region interface is very low. Hence, large systems sizes are needed to minimize the electrode-electrolyte region interfacial effects. To overcome these problems, a new technique based on the Gibbs Ensemble is proposed for simulation of an EDLC. In the proposed technique, each electrode is simulated in a separate simulation box. Application of periodic boundary conditions eliminates the interfacial effects. This in addition to the use of constant voltage ensemble allows for a more convenient comparison of simulation results with experimental measurements on typical EDLCs. (C) 2014 AIP Publishing LLC.