The β to α phase transition of tantalum coatings deposited by modulated pulsed power magnetron sputtering

Tantalum coatings are of particular interest today as promising candidates to replace potentially hazardous electrodeposited chromium coatings for tribological and corrosion resistant applications, such as the internal lining on large-caliber gun barrels. Tantalum coatings have two crystalline phases, α-Ta (body-centered-cubic) and β-Ta (metastable tetragonal) that exhibit relatively different properties. Alpha-Ta is typically preferred for wear and corrosion resistant applications and unfortunately, is very difficult to deposit without the assistance of substrate heating or post-annealing treatments. Furthermore, there is no general consensus on the mechanism which causes α or β to form or if there is a phase transition or transformation from β → α during coating deposition. In this study, modulated pulsed power (MPP) magnetron sputtering was used to deposit tantalum coatings with thicknesses between 2 and 20 μm without external substrate heating. The MPP Ta coatings showed good adhesion and low residual stress. This study shows there is an abrupt β → α phase transition when the coating is 5–7 μm thick and not a total phase transformation. Thermocouple measurements reveal substrate temperature increases as a function of deposition time until reaching a saturation temperature of ~ 388 °C. The importance of substrate temperature evolution on the β → α phase transition is also explained.

Set up of a procedure for correlation analysis between current discharge and dose delivery in a pulsed power plasma device for medical application

This thesis work aims to find a procedure for isolating specific features of the current signal from a plasma focus for medical applications. The structure of the current signal inside a plasma focus is exclusive of this class of machines and a specific analysis procedure has to be developed. The hope is to find one or more features that shows a correlation with the dose erogated. The study of the correlation between the current discharge signal and the dose delivered by a plasma focus could be of some importance not only for the practical application of dose prediction but also for expanding the knowledge anbout the plasma focus physics. Vatious classes of time-frequency analysis tecniques are implemented in order to solve the problem.

Pressure field along the axis of a high-power klystron amplifier

The pressure field in a high-power klystron amplifier is investigated to scale the ionic vacuum pump used to maintain the ultra high-vacuum in the device in order to increase its life-time. The investigation is conducted using an 1.3 GHz, 100 A - 240 keV high-power klystron with five reentrant coaxial cavities, assembled in a cylindrical drift tube 1.2 m long. The diffusion equation is solved to the regime molecular flow to obtain the pressure profile along the axis of the klystron drift tube. The model, solved by both analytical and numerical procedures, is able to determine the pressure values in steady-state case. This work considers the specific conductance and all important gas sources, as in the degassing of the drift tube and cavities walls, cathode, and collector. For the drift tube degassing rate equals to q(deg) = 2x10(-12) (-)mbar.L.s(-1) cm(-2) (degassing rate per unit area), to cavities q(cavity) = 3x10(-13) mbar.L.s(-1)cm(-2), to the cathode q(cathode) = 6x10(-9)_mbar.L.s(-1) and to the collector q(collector) = 6x10(-9) mbar.L.s(-1), it was found that a 10 L.s(-1) ionic vacuum pump connected in the output waveguide wall is suitable. In this case, the pressure obtained in the cathode is p(cathode) = 6.3x10(-9) mbar, in the collector p(collector) = 2.7x10(-9) mbar, and in the output waveguide p = 2.1x10(-9) mbar. Although only the steady-state case is analyzed, some aspects that may be relevant in a transient situation, for instance, when the beam hits the drift tube walls, producing a gas burst, is also commented.

A DC Voltage-Multiplier Circuit Working as a High-Voltage Pulse Generator

The intensive use of semiconductor devices enabled the development of a repetitive high-voltage pulse-generator topology from the dc voltage-multiplier (VM) concept. The proposed circuit is based on an odd VM-type circuit, where a number of dc capacitors share a common connection with different voltage ratings in each one, and the output voltage comes from a single capacitor. Standard VM rectifier and coupling diodes are used for charging the energy-storing capacitors, from an ac power supply, and two additional on/off semiconductors in each stage, to switch from the typical charging VM mode to a pulse mode with the dc energy-storing capacitors connected in series with the load. Results from a 2-kV experimental prototype with three stages, delivering a 10-mu s pulse with a 5-kHz repetition rate into a resistive load, are discussed. Additionally, the proposed circuit is compared against the solid-state Marx generator topology for the same peak input and output voltages.

Repetitive Solid State Pulse Modulator Based on a DC Voltage Multiplier

A newly developed solid-state repetitive high-voltage (HV) pulse modulator topology created from the mature concept of the d.c. voltage multiplier (VM) is described. The proposed circuit is based in a voltage multiplier type circuit, where a number of d.c. capacitors share a common connection with different voltage rating in each one. Hence, besides the standard VM rectifier and coupling diodes, two solid-state on/off switches are used, in each stage, to switch from the typical charging VM mode to a pulse mode with the d.c. capacitors connected in series with the load. Due to the on/off semiconductor configuration, in half-bridge structures, the maximum voltage blocked by each one is the d.c. capacitor voltage in each stage. A 2 kV prototype is described and the results are compared with PSPICE simulations.

A New Modular Marx Derived Multilevel Converter

A new Modular Marx Multilevel Converter, M(3)C, is presented. The M(3)C topology was developed based on the Marx Generator concept and can contribute to technological innovation for sustainability by enabling wind energy off-shore modular multilevel power switching converters with an arbitrary number of levels. This paper solves both the DC capacitor voltage balancing problem and modularity problems of multilevel converters, using a modified cell of a solid-state Marx modulator, previously developed by authors for high voltage pulsed power applications. The paper details the structure and operation of the M(3)C modules, and their assembling to obtain multilevel converters. Sliding mode control is applied to a M(3)C leg and the vector leading to automatic capacitor voltage equalization is chosen. Simulation results are presented to show the effectiveness of the proposed M(3)C topology.

New Technique for Uniform Voltage Sharing in Series Stacked Semiconductors

This paper describes the operation of a solid-state series stacked topology used as a serial and parallel switch in pulsed power applications. The proposed circuit, developed from the Marx generator concept, balances the voltage stress on each series stacked semiconductor, distributing the total voltage evenly. Experimental results from a 10 kV laboratory series stacked switch, using 1200 V semiconductors in a ten stages solid-state series stacked circuit, are reported and discussed, considering resistive, capacitive and inductive type loads for high and low duty factor voltage pulse operation.

Solid State Marx Modulator with Blumlein Stack for Bipolar Pulse Generation

Sub-nanosecond bipolar high voltage pulses are a very important tool for food processing, medical treatment, waste water and exhaust gas processing. A Hybrid Modulator for sub-microsecond bipolar pulse generation, comprising an unipolar solid-state Marx generator connected to a load through a stack Blumlein system that produces bipolar pulses and further multiplies the pulse voltage amplitude, is presented. Experimental results from an assembled prototype show the generation of 1000 V amplitude bipolar pulses with 100 ns of pulse width and 1 kHz repetition rate.

Multifunctional controller architecture for sold-state marx modulator based on FPGA

This paper proposes a multifunctional architecture to implement field-programmable gate array (FPGA) controllers for power converters and presents a prototype for a pulsed power generator based on a solid-state Marx topology. The massively parallel nature of reconfigurable hardware platforms provides very high processing power and fast response times allowing the implementation of many subsystems in the same device. The prototype includes the controller, a failure detection system, an interface with a safety/emergency subsystem, a graphical user interface, and a virtual oscilloscope to visualize the generated pulse waveforms, using a single FPGA. The proposed architecture employs a modular design that can be easily adapted to other power converter topologies.

Solid-State bipolar Marx modulator modeling

A mathematical model that simulates the operation of a solid-state bipolar Marx modulator topology, including the influence of parasitic capacitances is presented and discussed as a tool to analyze the circuit behavior and to assist the design engineer to select the semiconductor components and to enhance the operating performance. Simulations show good agreement with experimental results, considering a four stage circuit assembled with 1200 V isolated gate bipolar transistors and diodes, operating at 1000 V dc input voltage and 1-kHz frequency, giving 4 kV and 10-mu s output pulses into several resistive loads. Results show that parasitic capacitances between Marx cells to ground can significantly load the solid-state switches, adding new operating circuit conditions.

Marx-Type solid-state bipolar modulator topologies: Performance comparison

The operation of generalized Marx-type solid-state bipolar modulators is discussed and compared with simplified Marx-derived circuits, to evaluate their capability to deal with various load conditions. A comparative analysis on the number of switches per cell, fiber optic trigger count, losses, and switch hold-off voltages has been made. A circuit topology is obtained as a compromise in terms of operating performance, trigger simplicity, and switching losses. A five-stage laboratory prototype of this circuit has been assembled using 1200 V insulated gate bipolar transistors (IGBTs) and diodes, operating with 1000 V dc input voltage and 1 kHz frequency, giving 5 kV bipolar pulses, with 2.5 mu s pulse width and 5 mu s relaxation time into resistive, capacitive, and inductive loads.

Modeling of a solid-state bipolar blumlein generator for N stages

This paper models an n-stage stacked Blumlein generator for bipolar pulses for various load conditions. Calculation of the voltage amplitudes in time domain at the load and between stages is described for an n-stage generator. For this, the reflection and transmission coefficients are mathematically modeled where impedance discontinuity occurs (i.e., at the junctions between two transmission lines). The mathematical model developed is assessed by comparing simulation results to experimental data from a two-stage Blumlein solid-state prototype.

25 kV bipolar solid-state Marx generator for industrial food applications

The preliminary results from a bipolar industrial solidstate based Marx generator, developed for the food industry, capable of delivering 25 kV/250 A positive and negative pulses with 12 kW average power, are presented and discussed. This modular topology uses only four controlled switches per cell, 27 cells in total that can be charged up to 1000V each, the two extra cells are used for droop compensation. The triggering signals for all the switches are generated by a FPGA. Considering that biomaterials are similar to resistive type loads, experimental results from this new bipolar 25 kV modulator into resistive loads are presented and discussed.

Calculation Methodology and Fabrication Procedures for Particle Accelerator Strip-Line Kickers: Application to the CTF3 Combiner Ring Extraction Kicker and TL2 Tail Clippers

A particle accelerator is any device that, using electromagnetic fields, is able to communicate energy to charged particles (typically electrons or ionized atoms), accelerating and/or energizing them up to the required level for its purpose. The applications of particle accelerators are countless, beginning in a common TV CRT, passing through medical X-ray devices, and ending in large ion colliders utilized to find the smallest details of the matter. Among the other engineering applications, the ion implantation devices to obtain better semiconductors and materials of amazing properties are included. Materials supporting irradiation for future nuclear fusion plants are also benefited from particle accelerators. There are many devices in a particle accelerator required for its correct operation. The most important are the particle sources, the guiding, focalizing and correcting magnets, the radiofrequency accelerating cavities, the fast deflection devices, the beam diagnostic mechanisms and the particle detectors. Most of the fast particle deflection devices have been built historically by using copper coils and ferrite cores which could effectuate a relatively fast magnetic deflection, but needed large voltages and currents to counteract the high coil inductance in a response in the microseconds range. Various beam stability considerations and the new range of energies and sizes of present time accelerators and their rings require new devices featuring an improved wakefield behaviour and faster response (in the nanoseconds range). This can only be achieved by an electromagnetic deflection device based on a transmission line. The electromagnetic deflection device (strip-line kicker) produces a transverse displacement on the particle beam travelling close to the speed of light, in order to extract the particles to another experiment or to inject them into a different accelerator. The deflection is carried out by the means of two short, opposite phase pulses. The diversion of the particles is exerted by the integrated Lorentz force of the electromagnetic field travelling along the kicker. This Thesis deals with a detailed calculation, manufacturing and test methodology for strip-line kicker devices. The methodology is then applied to two real cases which are fully designed, built, tested and finally installed in the CTF3 accelerator facility at CERN (Geneva). Analytical and numerical calculations, both in 2D and 3D, are detailed starting from the basic specifications in order to obtain a conceptual design. Time domain and frequency domain calculations are developed in the process using different FDM and FEM codes. The following concepts among others are analyzed: scattering parameters, resonating high order modes, the wakefields, etc. Several contributions are presented in the calculation process dealing specifically with strip-line kicker devices fed by electromagnetic pulses. Materials and components typically used for the fabrication of these devices are analyzed in the manufacturing section. Mechanical supports and connexions of electrodes are also detailed, presenting some interesting contributions on these concepts. The electromagnetic and vacuum tests are then analyzed. These tests are required to ensure that the manufactured devices fulfil the specifications. Finally, and only from the analytical point of view, the strip-line kickers are studied together with a pulsed power supply based on solid state power switches (MOSFETs). The solid state technology applied to pulsed power supplies is introduced and several circuit topologies are modelled and simulated to obtain fast and good flat-top pulses.

Tailoring the magnetic anisotropy and domain patterns of sputtered TbFeGa alloys

We report the magnetic anisotropy and domain configuration of cosputtered TbFeGa alloys. The layers were deposited from two targets with compositions TbFe2 and Fe3Ga, respectively. The structural and magnetic properties do not only depend on the composition but also on the growth conditions. Alloys with the same composition but deposited using a DC or a pulsed power source in the TbFe2 target exhibit a different magnetic anisotropy. The perpendicular magnetic anisotropy, the size and topology of domain patterns can be tailored by changing the evaporation parameters of TbFe2. The width of the stripe domain increases from 235 to 835 nm when using the DC source in the TbFe2. We correlate this effect with Tb enrichment of the TbxFe1−x phases present in the samples.