Marx-Type solid-state bipolar modulator topologies: Performance comparison


Autoria(s): Canacsinh, Hiren; Redondo, Luís Manuel dos Santos; Silva, José Fernando
Data(s)

11/09/2015

11/09/2015

01/10/2012

Resumo

The operation of generalized Marx-type solid-state bipolar modulators is discussed and compared with simplified Marx-derived circuits, to evaluate their capability to deal with various load conditions. A comparative analysis on the number of switches per cell, fiber optic trigger count, losses, and switch hold-off voltages has been made. A circuit topology is obtained as a compromise in terms of operating performance, trigger simplicity, and switching losses. A five-stage laboratory prototype of this circuit has been assembled using 1200 V insulated gate bipolar transistors (IGBTs) and diodes, operating with 1000 V dc input voltage and 1 kHz frequency, giving 5 kV bipolar pulses, with 2.5 mu s pulse width and 5 mu s relaxation time into resistive, capacitive, and inductive loads.

Identificador

CANACSINH, H.; REDONDO, L. M.; SILVA, J. F. – Marx-Type solid-state bipolar modulator topologies: Performance comparison. IEEE Transactions on Plasma Science. ISSN: 0093-3813. Vol. 40, nr. 10 (2012), pp. 2603-2610

0093-3813

http://hdl.handle.net/10400.21/5171

Idioma(s)

eng

Publicador

IEEE-INST Electrical Electronics Engineers Inc

Relação

QREN - Portuguese National Strategic Reference Framework - 1600/A2P2/2008

FCT - Portuguese Technological and Science Foundation - CERN/FP/111670/2010

Direitos

closedAccess

Palavras-Chave #High-Voltage (HV) Techniques #Marx Generators #Power Semiconductor Devices #Pulsed Power Systems
Tipo

article