971 resultados para Piezoelectric Coefficient
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Polymer blends based on poly(vinylidene fluoride), PVDF and poly(ethylene oxide), PEO, with varying compositions have been prepared by solvent casting, the polymer blend films being obtained from solutions in dimethyl formamide at 70ºC. Under these conditions PVDF crystallizes from solution while PEO remains in the molten state. Then, PEO crystallizes from the melt confined by PVDF crystalls during cooling to room temperature. PVDF crystallized from DMF solutions adopt predominantly the electroactive β-phase (85%). Nevertheless when PEO is introduced in the polymer blend the β-phase content decreases slightly to 70%. The piezoelectric coefficient (d33) in pristine PVDF is -5 pC/N and decreases with increasing PEO content in the PVDF/PEO blends. Blend morphology, observed by electron and atomic force microscopy, shows the confinement of PEO between the already formed PVDF crystals. On the other hand the sample contraction when PEO is extracted from the blend with water (which is not a solvent for PVDF) allows proving the co-continuity of both phases in the blend. PEO crystallization kinetics have been characterized by DSC both in isothermal and cooling scans experiments showing important differences in crystalline fraction and crystallization rate with sample composition.
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The effect of film orientation on piezoelectric and ferroelectric properties of bismuth layered compounds deposited on platinum coated silicon substrates was investigated. Piezo-force microscopy was used to probe the local piezoelectric properties of Bi(4)Ti(3)O(12), CaBi(4)Ti(4)O(15) and SrBi(4)Ti(4)O(15) films. Our measurements on individual grains clearly reveal that the local piezoelectric properties are determined by the polarization state of the grain. A piezoelectric coefficient of 65 pm/V was attained after poling in a grain with a polar axis very close to the normal direction. The piezoelectric coefficient and the remanent polarization were larger for a-b axes oriented than for c-axis-oriented films. (c) 2007 Elsevier B.V All rights reserved.
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CaBi2Nb2O9 (CBNO) thin films were deposited on platinum-coated silicon substrates by the polymeric precursor method, and were annealed in air and in an oxygen atmosphere. The structure, surface morphology and electrical properties of CBNO thin films have been investigated. The presence of an oxygen atmosphere during crystallization of the films affected the structure perfection and morphology, as well as ferroelectric and piezoelectric properties. A reduction in P-r and piezoelectric coefficient, an increase of V-c and displacement of the Curie point is evident in the films crystallized in an oxygen atmosphere. The impact of exposure to the oxygen atmosphere on the creation of defects caused by bismuth and oxygen vacancies between layers was also investigated by X-ray photoelectron spectroscopy. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Bismuth titanate (Bi4Ti3O12, BIT) films were evaluated for use as lead-free piezoelectric thin films in micro-electromechanical systems. The films were grown by the polymeric precursor method on LaNiO3/SiO2/Si (1 0 0) (LNO), RuO2/SiO2/Si (1 0 0) (RuO2) and Pt/Ti/SiO2/Si (1 0 0) (Pt) bottom electrodes in a microwave furnace at 700 degrees C for 10 min. The domain structure was investigated by piezoresponse force microscopy (PFM). Although the converse piezoelectric coefficient, d(33), regardless of bottom electrode is around (similar to 40 pm/V), those over RuO2 and LNO exhibit better ferroelectric properties, higher remanent polarization (15 and 10 mu C/cm(2)), lower drive voltages (2.6 and 1.3 V) and are fatigue-free. The experimental results demonstrated that the combination of the polymeric precursor method assisted with a microwave furnace is a promising technique to obtain films with good qualities for applications in ferroelectric and piezoelectric devices. (c) 2006 Elsevier Ltd. All rights reserved.
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Bismuth titanate (Bi4Ti3O12-BIT) films were evaluated for use as lead-free piezoelectric thin-films in micro-electromechanical systems. The films were grown by the polymeric precursor method on Pt/Ti/SiO2/Si (1 0 0) (Pt) bottom electrodes at 700 degrees C for 2 h in static air and oxygen atmospheres. The domain structure was investigated by piezoresponse force microscopy (PFM). Annealing in static air leads to better ferroelectric properties, higher remanent polarization, lower drive voltages and higher piezoelectric coefficient. on the other hand, oxygen atmosphere favors the imprint phenomenon and reduces the piezoelectric coefficient dramatically. Impedance data, represented by means of Nyquist diagrams, show a dramatic increase in the resistivity for the films annealed in static air atmopshere. (c) 2006 Elsevier Ltd. All rights reserved.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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This work describes a fabrication and test sequence of microvalves installed on micronozzles. The technique used to fabricate the micronozzles was powder blasting. The microvalves are actuators made from PVDF (polivinylidene fluoride), that is a piezoelectric polymer. The micronozzles have convergent-divergent shape with external diameter of 1mm and throat around 230μm. The polymer have low piezoelectric coefficient, for this reason a bimorph structure with dimensions of 2mm width and 4mm of length was build (two piezoelectric sheets were glued together with opposite polarization). Both sheets are recovered with a conductor thin film used as electrodes. Applying a voltage between the electrodes one sheet expands while the other contracts and this generate a vertical movement to the entire actuator. Appling +300V DC between the electrodes the volume flux rate, for a pressure ratio of 0.5, was 0.36 sccm. Applying -200V DC between the electrodes (that means it closed) the volume flux rate was 0.32 sccm, defining a possible range of flow between 0.32 and 0.36 sccm. The third measurement was performed using AC voltage (200V AC with frequency of 1Hz), where the actuator was oscillating. For pressure ratio of 0.5, the flow rate was 0.62 sccm. © 2008 IOP Publishing Ltd.
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Emerging nanogenerators have attracted the attention of the research community, focusing on energy generation using piezoelectric nanomaterials. Nanogenerators can be utilized for powering NEMS/MEMS devices. Understanding the piezoelectric properties of ZnO one-dimensional materials such as ZnO nanobelts (NBs) and Nanowires (NWs) can have a significant impact on the design of new devices. The goal of this dissertation is to study the piezoelectric properties of one-dimensional ZnO nanostructures both experimentally and theoretically. First, the experimental procedure for producing the ZnO nanostructures is discussed. The produced ZnO nanostructures were characterized using an in-situ atomic force microscope and a piezoelectric force microscope. It is shown that the electrical conductivity of ZnO NBs is a function of applied mechanical force and its crystalline structure. This phenomenon was described in the context of formation of an electric field due to the piezoelectric property of ZnO NBs. In the PFM studies, it was shown that the piezoelectric response of the ZnO NBs depends on their production method and presence of defects in the NB. Second, a model was proposed for making nanocomposite electrical generators based on ZnO nanowires. The proposed model has advantages over the original configuration of nanogenerators which uses an AFM tip for bending the ZnO NWs. Higher stability of the electric source, capability for producing larger electric fields, and lower production costs are advantages of this configuration. Finally, piezoelectric properties of ZnO NBs were simulated using the molecular dynamics (MD) technique. The size-scale effect on piezoelectric properties of ZnO NBs was captured, and it is shown that the piezoelectric coefficient of ZnO NBs decreases by increasing their lateral dimensions. This phenomenon is attributed to the surface charge redistribution and compression of unit cells that are placed on the outer shell of ZnO NBs.
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Poly(vinylidene fluoride-co-chlorotrifluoroethylene), PVDF-CTFE, membranes were prepared by solven casting from dimethylformamide, DMF. The preparation conditions involved a systematic variation of polymer/solvent ratio and solvent evaporation temperature. The microstructural variations of the PVDF-CTFE membranes depend on the different regions of the PVDF-CTFE/DMF phase diagram, explained by the Flory-Huggins theory. The effect of the polymer/solvent ratio and solvent evaporation temperature on the morphology, degree of porosity, β-phase content, degree of crystallinity, mechanical, dielectric and piezoelectric properties of the PVDF-CTFE polymer were evaluated. In this binary system, the porous microstructure is attributed to a spinodal decomposition of the liquid-liquid phase separation. For a given polymer/solvent ratio, 20 wt%, and higher evaporation solvent temperature, the β-phase content is around 82% and the piezoelectric coefficient, d33, is - 4 pC/N.
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The authors investigated the influence of defects on the piezoelectric and dielectric properties of Bi4Ti3O12 (BIT), SrBi4Ti4O15 (SBTi) and CaBi4Ti4O15 (CBTi144) thin films by x-ray photoemission spectroscopy measurements. In the SBTi film, Sr which is a nonpolarizable ion restricting the movement of Ti4+ ions and thus leads to a low piezoresponse. Meanwhile, the oxygen environment is quite different in the BIT and CBTi144 films exhibiting excellent piezoelectric properties. The piezoelectric coefficient and the dielectric behavior were larger for a-b axis oriented than for c axis-oriented films due to the defects created during the films crystallization. (c) 2007 American Institute of Physics.
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CaBi4Ti4O15 (CBTi144) thin films were evaluated for use as lead-free thin-film piezoelectrics in microelectromechanical systems. The films were grown by the polymeric precursor method on (100)Pt/Ti/SiO2/Si substrates. The a/b-axis orientation of the ferroelectric film is considered to be associated with the preferred orientation of the Pt bottom electrode. The P-r and E-c were 14 mu C/cm(2) and 64 kV/cm, respectively, for a maximum applied field of 400 kV/cm. The domain structure was investigated by piezoresponse force microscopy. The film has a piezoelectric coefficient, d(33), equal to 60 pm/V and a current density of 0.7 mA/cm(2).
High Curie point CaBi2Nb2O9 thin films: A potential candidate for lead-free thin-film piezoelectrics
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CaBi2Nb2O9 (CBNO) thin films deposited on platinum coated silicon substrates by the polymeric precursor method exhibited good structural, dielectric, and piezoelectric characteristics. Capacitance-voltage measurements indicated good ferroelectric polarization switching characteristics. Remanent polarization and drive voltage values were 4.2 mu C/cm(2) and 1.7 V for a maximum applied voltage of 10 V. The film has a piezoelectric coefficient d(33) equal to 60 pm/V, current density of 0.7 mu A/cm(2), and Curie temperature of 940 degrees C. The polar-axis-oriented CBNO is a promising candidate for use in lead-free high Curie point in ferroelectric and piezoelectric devices. (c) 2006 American Institute of Physics.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Flexible standing films of piezoelectric composite made of lead zirconate titanate (PZT) ceramic powder and Poly(3-hydroxybutyrate) (PHB) in powder form were obtained by mixing both polymers mechanically and pressed at 180°C. The piezoelectric coefficient d33 were investigated as function of PZT content, poling temperature and electric field. The highest value for d 33 coefficient was around 6pC/N for 50 vol% of PZT content in the composite. As PHB is a biodegradable polymer the composite has potential application as sensor minimizing the environmental problems.