Piezoelectric properties of Bi4Ti3O12 thin films annealed in different atmospheres
Contribuinte(s) |
Universidade Estadual Paulista (UNESP) |
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Data(s) |
20/05/2014
20/05/2014
03/05/2007
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Resumo |
Bismuth titanate (Bi4Ti3O12-BIT) films were evaluated for use as lead-free piezoelectric thin-films in micro-electromechanical systems. The films were grown by the polymeric precursor method on Pt/Ti/SiO2/Si (1 0 0) (Pt) bottom electrodes at 700 degrees C for 2 h in static air and oxygen atmospheres. The domain structure was investigated by piezoresponse force microscopy (PFM). Annealing in static air leads to better ferroelectric properties, higher remanent polarization, lower drive voltages and higher piezoelectric coefficient. on the other hand, oxygen atmosphere favors the imprint phenomenon and reduces the piezoelectric coefficient dramatically. Impedance data, represented by means of Nyquist diagrams, show a dramatic increase in the resistivity for the films annealed in static air atmopshere. (c) 2006 Elsevier Ltd. All rights reserved. |
Formato |
967-974 |
Identificador |
http://dx.doi.org/10.1016/j.materresbull.2006.08.014 Materials Research Bulletin. Oxford: Pergamon-Elsevier B.V., v. 42, n. 5, p. 967-974, 2007. 0025-5408 http://hdl.handle.net/11449/36262 10.1016/j.materresbull.2006.08.014 WOS:000245842600023 |
Idioma(s) |
eng |
Publicador |
Elsevier B.V. |
Relação |
Materials Research Bulletin |
Direitos |
closedAccess |
Palavras-Chave | #ceramics #chemical synthesis #piezoelectricity |
Tipo |
info:eu-repo/semantics/article |