Diode-end-pumped passively CW mode-locked Nd : YLF laser by the LT-In0.25Ga0.75As absorber

We have demonstrated a self-staring passively continuous-wave mode-locked diode end-pumped Nd:YLF laser with a semiconductor saturable absorber mirror of single-quantum-well (In0.25Ga0.75As) grown by metal-organic chemical-vapor deposition technique at low temperature. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Stable pulse duration of 3 ps has been achieved at the repetition rate of 98 MHz. The average output power was 530 mW at 1053 nm under the incident pump power of 10 W, corresponding to the peak power of 1.8 kW and pulse energy of 5.4 nJ.

Continuous-wave watt-level Nd:YLF/KGW Raman laser operating at near-IR, yellow and lime-green wavelengths

A Nd:YLF/KGW Raman laser has been investigated in this work. We have demonstrated CW output powers at six different wavelengths, 1147 nm (0.70 W), 1163 nm (0.95 W), 549 nm (0.65 W), 552 nm (1.90 W), 573 nm (0.60 W) and 581 nm (1.10 W), with higher peak powers achieved under quasi-CW operation. Raman conversion of the 1053 nm fundamental emission is reported for the first time, enabling two new wavelengths in crystalline Raman lasers, 549 nm and 552 nm. The weak thermal lensing associated with Nd:YLF has enabled to achieve good beam quality, M-2 <= 2.0, and stable operation in relatively long cavities. (C) 2012 Optical Society of America

LD抽运的Nd：YLF／Cr^4＋：YAG被动调Q激光器

报道了激光二极管（LD）抽运的Nd：YLF激光器，采用平凹腔结构，分别用两片Cr^4＋：YAG可饱和吸收晶体，实现了被动调Q，输出激光波长为1053nm。采用厚度为0．5mm小信号透过率为90％的Cr^4＋ YAG，在泵浦功率最大为17W时，输出脉冲宽度为60．6ns，平均功率为1．5W，重复频率为9．5kHz，单脉冲能量为157．9mJ；采用厚度为0．55mm小信号透过率为95％的Cr^4＋ YAG，在泵浦功率最大为17W时，输出脉冲宽度为68．6ns，平均功率为1．35W，重复频率为14kHz，单脉冲

高稳定激光二极管抽运Nd∶YLF再生放大器

设计并实现了一种放大纳秒激光脉冲的高稳定的激光二极管(LD)抽运Nd∶YLF再生放大器。为了获得高稳定的输出,再生放大器工作在饱和状态。此时,再生放大器输出稳定性最好,而且注入激光脉冲能量波动引起的输出激光脉冲波动被抑制。由于增益饱和效应,再生放大器输出脉冲出现时域波形失真,附加后缀脉冲能够减弱时域波形失真。放大器工作波长1053nm,工作频率1Hz。输入240pJ的3ns方波激光脉冲,输出激光脉冲能量4.2mJ,总增益大于107,不稳定度小于1%(均方根),方波扭曲1.33。为3ns方波激光脉冲引入其本身幅度0.75倍的后缀脉冲,输出激光脉冲方波扭曲由1.33降至1.17。

Highly stable, diode-pumped Nd : YLF regenerative amplifier

We present the design and experimental results for a diode pumped Nd:YLF regenerative amplifier applied to amplify a nanosecond laser pulse. Numerical simulation shows that the maximum output energy and the best stability can be obtained when the regenerative amplifier operates in a saturated mode for all pulse duration and temporal profiles. Using extra post-pulse is a good method to decrease the square-pulse distortion caused by gain saturation effect. The amplifier shows output energy of 4.2mJ with a total energy gain of more than 107 and output energy stability of better than 1% rms. When extra post-pulse is added, square-pulse distortion is decreased from 1.33 to 1.17 for the amplifier that is seeded with an optical pulse of 3 ns.

A passively mode-locked diode-end-pumped Nd : YAG laser with a semiconductor saturable absorber mirror grown by metal organic chemical vapour deposition

We report the experimental results of a mode-locked diode-end-pumped Nd:YAG laser with a semiconductor saturable absorber mirror (SESAM) from which we achieved a 10 ps pulse duration at 150 MHz repetition rate. The SESAM was grown by metal organic chemical vapour deposition at low temperature. The recovery time was measured to be 0.5 ps, indicating the potential pulse compression to sub-picoseconds.

Polarization Self-Modulation Phenomenon in a Free Oscillated Nd: YAG Laser

Polarization self-modulation effect in a free oscillated Nd:YAG laser is investigated after a quarter wave plate is introduced independently in the two positions of the cavity. As described in the previous experiments, the intensity components in the orthogonal directions are modulated with a period of the round-trip time or twice. Different pulse shapes reveal that the seed field from the spontaneous emission is not uniform and seems to be stochastic for each pulse.

Research on Q-Switched Nd : YAG laser engraving

IN this paper, the engraving process with Q-Switched Nd:YAG laser is investigated. High power density is the pre- requisition to vapor materials, and high repetition rate makes the engraving process highly efficient. An acousto- optic Q-Switch is applied in the cavity of CW 200 W Nd:YAG laser to achieve the high peak power density and the high pulse repetition rate. Different shape craters are formed in a patterned structure on the material surface when the laser beam irradiates on it by controlling power density, pulse repetition rate, pulse quantity and pulse interval. In addition, assisting oxygen gas is used for not only improving combustion to deepen the craters but also removing the plasma that generated on the top of craters. Off-focus length classified as negative and positive has a substantial effect on crater diameters. According to the message of rotating angle positions from material to be engraved and the information of graph pixels from computer, a special graph is imparted to the material by integrating the Q- Switched Nd:YAG laser with the computer graph manipulation and the numerically controlled worktable. The crater diameter depends on laser beam divergence and laser focal length. The crater diameter changes from 50 micrometers to 300 micrometers , and the maximum of crater depth reaches one millimeter.