12 resultados para MnSb
Resumo:
MnSb films were deposited on porous silicon substrates by physical vapor deposition (PVD) technique. Modulation effects due to the substrate on microstructure and magnetic properties of the MnSb film's were studied by scanning electron microscope (SEM), X-ray diffraction (XRD) and measurements of hysteresis loops. SEM images of the MnSb films indicate that net-like structures were obtained because of the special morphology of the substrates. The net-like MnSb films exhibit some novel magnetic properties different from the unpatterned referenced samples. For example, in the case of net-like morphology, the coercive field is as low as 60 Oe.
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提供了一种利用物理蒸发沉积技术在单晶硅上生长纳米尺度的MnSb薄膜的方法.X射线衍射分析表明薄膜的主要成分是MnSb合金.场发射扫描电镜观察到薄膜是由纳米尺寸的棒状物和叶状物组成.纳米棒的平均直径为20nm,长度在几百纳米范围内.纳米叶的厚度大约为20nm,宽度为100nm左右.用可变梯度磁力计测量了薄膜的磁滞回线,结果显示薄膜有很强的几何各向异性.
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采用一种新的生长铁磁 /半导体异质结材料的方法——物理气相沉积方法生长了一种铁磁 /半导体异质结材料 Mn Sb/Si.对所获得的样品进行特征 X射线能谱分析表明 Mn和 Sb在 Si衬底上的沉积速率相近 ,它们的原子百分数之比接近 1∶ 1.X射线衍射分析发现薄膜中形成了 Mn Sb相 ,样品在室温下测出磁滞回线也从侧面验证了存在 Mn Sb相 .用原子力显微镜对样品的表面进行观察 ,发现 Mn Sb呈有规则形状的小晶粒状 ,晶粒大小比较均匀 ,尺寸大多数在 5 0 0 nm左右 .
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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z
Resumo:
MnSb films were deposited on porous silicon substrates by physical vapor deposition (PVD) technique. Modulation effects due to the substrate on microstructure and magnetic properties of the MnSb film's were studied by scanning electron microscope (SEM), X-ray diffraction (XRD) and measurements of hysteresis loops. SEM images of the MnSb films indicate that net-like structures were obtained because of the special morphology of the substrates. The net-like MnSb films exhibit some novel magnetic properties different from the unpatterned referenced samples. For example, in the case of net-like morphology, the coercive field is as low as 60 Oe. (c) 2006 Elsevier B.V. All rights reserved.
Resumo:
MnSb/porous silicon hybrid structure was prepared by physical vapor deposition technique. The structure and surface morphology of the MnSb films were analyzed by X-ray diffraction and scanning electron microscope, respectively. The magnetic hysteresis loops were obtained by an alternative gradient magnetometer. Based on the measurements, only MnSb phase was found and the surface morphology was rough and island-like. MnSb thin films show ferromagnetism at room temperature. (C) 2003 Elsevier B.V. All rights reserved.
Resumo:
Ferromagnetic MnSb films were synthesized on Si wafers by physical vapor deposition. X-ray diffraction revealed that the films primarily consisted of MnSb alloy. Nanorods and nanoleaves were observed in the MnSb films by field-emission scanning electron microscopy. These nanorods had an average diameter of 20nm and a length of up to hundreds of nanometers. The nanoleaves had a width and thickness of about 100 and 20nm, respectively. Magnetic hysteresis loops were measured by an alternative gradient magnetometer, and the loops showed strong geometrical anisotropy.
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采用一种新的生长铁磁/半导体异质结材料的方法——物理气相沉积方法生长了一种铁磁/半导体异质结材料MnSb/Si.对所获得的样品进行特征X射线能谱分析表明Mn和Sb在Si衬底上的沉积速率相近,它们的原子百分数之比接近1
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We have studied magneto-transport and optical properties of Ga1-xMnxSb crystals (x = 0.01, 0.02, 0.03 and 0.04) grown by horizontal Bridgman method. Negative magnetoresistance and anomalous Hall effect have been observed below 10K. Temperature dependence of magnetization measurement shows a magnetic ordering below 10K which could arise from Ga1-xMnxSb alloy formation. Also, saturation in magnetization observed even at room temperature suggests the existence of ferromagnetic MnSb clusters. Reduction in band gap is observed with increasing Mn concentration in the crystals. Temperature dependence of band gap follows Bose-Einstein's model.
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In1−xMnxSb crystals are grown with different Mn doping concentrations (x = 0.006, 0.01, 0.02, and 0.04) beyond the equilibrium solubility limit by the horizontal Bridgman technique. Structural, magnetic, and magnetotransport properties of the grown crystals are studied in the temperature range 1.4–300 K. Negative magnetoresistance and anomalous Hall effect are observed below 10 K. The anomalous Hall coefficient is found to be negative. The temperature dependence of the magnetization measurement shows a magnetic ordering below 10 K, which could arise from InMnSb alloy formation. Also, the saturation in magnetization observed even at room temperature suggests the existence of ferromagnetic MnSb clusters in the crystals, which has been verified by scanning electron microscopy studies. The carrier concentration increases with Mn doping, and this results in a decrease of resistivity. The carrier concentration and mobility at room temperature for the doped crystals are ∼ 2×1019 cm−3 and ∼ 200 cm2/V s, respectively. The observed anomalous Hall effect suggests the carrier mediated ferromagnetism below 10 K in In1−xMnxSb crystals.
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Raman scattering (RS) experiments have been performed for simultaneous determination of Mn composition and strain in Ga1-xMnxSb thin films grown on GaSb substrate by liquid phase epitaxy technique. The Raman spectra obtained from various Ga1-xMnxSb samples show only GaSb-like phonon modes whose frequency positions are found to have Mn compositional dependence. With the combination of epilayer strain model, RS and energy dispersive x-ray (EDX) experiments, the compositional dependence of GaSb-like LO phonon frequency is proposed both in strained and unstrained conditions. The proposed relationships are used to evaluate Mn composition and strain from the Ga1-xMnxSb samples. The results obtained from the RS data are found to be in good agreement with those determined independently by the EDX analysis. Furthermore, the frequency positions of MnSb-like phonon modes are suggested by reduced-mass model. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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This thesis presents the results of perturbed angular correlation (PAC) experiments , an experimental technique which measures the hyperfine interaction at probes (radioactive ions implanted in the materials to study), from which one infers local information on an atomic scale. Furthermore, abinitio calculations using density functional theory electronic obtain results that directly complement the experiments, and are also used for theoretical research. These methods were applied in two families of materials. The manganites, with the possible existence of magnetic, charge, orbital and ferroelectric orders, are of fundamental and technological interest. The experimental results are obtained in the alkaline-earth manganites (Ca, Ba, Sr), with special interest due to the structural variety of possible polymorphs. With probes of Cd and In the stability of the probe and its location in a wide temperature range is established and a comparison with calculations allows the physical interpretation of the results. Calculations of hyperfine properties in rare-earth manganites are also presented. The second type of materials in which hyperfine properties were studied are the Manganese pnictides: MnAs, MnSb, and MnBi, compounds in which magnetism is fundamental. The experimental results obtained mainly consider the MnAs compound, whose magneto-structural transition is of great interest. The transition is analyzed in detail with the local resolution characteristic of the technique, obtaining information of the character of the transition also with complementary, more conventional techniques. The last work in this thesis uses only the first principles calculations, continuing the theme of the hyperfine interactions, but this time with respect to ferroelectrics. Several transition metal oxides with perovskite or distorted structures are considered. The electric field gradient which exists due to the quadrupole interaction in nuclei is related to the spontaneous electric polarization, the main quantity measured in ferroelectrics. This study provides a fundamental theoretical basis for previous empirical studies, suggesting new directions for research in ferroelectrics and multiferroics using techniques which measure the electric field gradient.