MMI training for continuous phoneme recognition on the TIMIT database

This paper reports our experiences with a phoneme recognition system for the TIMIT database which uses multiple mixture continuous density monophone HMMs trained using MMI. A comprehensive set of results are presented comparing the ML and MMI training criteria for both diagonal and full covariance models. These results using simple monophone HMMs show clear performance gains achieved by MMI training, and are comparable to the best reported by others including those which use context-dependent models. In addition, the paper discusses a number of performance and implementation issues which are crucial to successful MMI training.

Realization of MMI power splitter by UV-light imprinting technique using hybrid sol-gel SiO2 materials

An efficient fabrication scheme of buried ridge waveguide devices is demonstrated by UV-light imprinting technique using organic-in organic hybrid sol-gel Zr-doped SiO2 materials. The refractive indices of a guiding layer and a cladding layer for the buried ridge waveguide structure are 1.537 and 1.492 measured at 1550 nm, respectively. The tested results show more circular mode profiles clue to existence of the cladding layer. A buried ridge single-mode waveguide operating at 1550 nm has a low propagation loss (0.088 dB/cm) and the 1 x 2 MMI power splitter exhibits uniform outputs, with a very low splitting loss of 0.029 dB at 1549 nm.

Fabrication of 4 x 4 tapered MMI coupler with large cross section

MMI coupler with large cross section has low coupling loss between the device and fiber. However, large chip area is required. Recently proposed N x N tapered MMI coupler shows a substantial reduction in device geometry. No such kind of devices with N > 2 has yet been realized up to now. The authors have demonstrated a 4 x 4 parabolically tapered MMI coupler with large cross section that can match the SM fiber in silicon-on-insulator (SOI) technology. The device exhibits a minimum uniformity of 0.36 dB and excess loss of 3.7 dB, It represents a key component for realization of MMI-based silicon integrated optical circuit technology.

An Efficient MMI SOI Splitter with Multimode Input/Output Waveguides

A 1×8 multimode interference power splitter with multimode input/output waveguides in SOI material is designed by the beam propagation method and fabricated by the inductive coupled plasma etching technology for use in fiber optics communication systems.The fabricated device exhibits low loss and good coupling uniformity.The excess loss is lower than 0.8dB,and the uniformity is 0.45dB at the wavelength of 1550nm.Moreover,the polarization dependent loss is lower than 0.7dB at 1550nm.The device size is only 2mm×10mm.

掩埋式弱限制MMI的性能模拟

采用精确模式分析方法(EMA)对一种掩埋式折射率差为0.47%的弱限制MMI进行了数值模拟,通过和强限制MMI对比表明,这种弱限制的MMI可以实现良好的均衡性(9.7×10-4dB)和附加损耗(0.13dB),比强限制MMI具有更大的带宽,更好的宽度和长度容差性.虽然这种弱限制MMI的最小附加损耗和最佳均衡性不能在同一长度同时获得,但由于其良好的容差性,在最佳均衡性长度处仍能获得低于0.8dB的附加损耗.用紫外写入波导的方法制作掩埋式结构的弱限制MMI器件是可行的.

Integrated MMI Optical Couplers and Optical Switches in Silicon-on-Insulator Technology

Integrated multimode interference (MMI) coupler based on silicon-on-insulator(SOI) has been becoming a kind of more and more attractive device in optical systems. SiO2thin cladding layers (＜1.0 μm) can be usedin SOI waveguide due to the large index step be-tween Si and SiO2, making them compatible with VLSI technology. The design and fabrica-tion of MMI optical couplers and optical switches in SOI technology are presented in thepa-per. We demonstrated the switching time of 2 × 2 MMI-MZI thermo-optical switch is less than 20 μs:

Design and Fabrication of Ultracompact 3-dB MMI Coupler in Silicon-on-Insulator

An ultracompact 3-dB coupler is designed and fabricated in silicon-on-insulator,based on 12 line tapered multimode interference(MMI) coupler.Comparing with the conventional straigth MMI coupler,the device is-40% shorter in length.The device exhibits uniformity of 1.3dB and excess loss of 2.5dB

MMI阵列波导光栅复用/解复用器的研制

详细分析了基于自镜像效应的MMI DMUX器件的基本工作原理，在此基础上，在SOI材料上完成了对8信道MMI DMUX的具体设计。该器件的输入、输出单模波导采用Soref的大截面脊形光波导理论进行优化设计，最后获得了当输入、输出单模波导宽度为5μm,SIE多模波导宽度和长度分别为72μm和6313.4μm时，该器件对8信道波长的隔离度均在35dB以上，且理论传输损耗<0.18dB。

SOI- Based 3dB MMI Splitter

国家自然科学基金

MMI optical couplers and switches with SOI technology

MMI (multimode interference) coupler, modulator and switch based on SOI (silicon- on-insulator) have been become more and more attractive in optical systems since they show important performances. SiO2 thin cladding layers (<1.0mum) can be used in SOI waveguide due to the large index step between Si and SiO2, making them compatible with the VLSI technology. The design and fabrication of multimode interference (MMI) optical coupler, modulator and switche in SOI technology are presented in the paper. The results demonstrated that the modulator has an extinction ratio of -11.0dB and excess loss of -2.5dB, while the optical switch has a crosstalk of -12.5dB and responding time of less than 20 mus.

Integrated tapered MMI couplers in the silicon-on-insulator technology

The authors have designed and fabricated 2x2 parabolically tapered MMI coupler with large cross-section and large space between difference ports using Silicon-on-Insulator ( SOI) technology. The devices demonstrate a minimum uniformity of 0.8dB and 30% shorter than the straight MMI coupler.

Integrated MMI optical couplers and optical switches in Silicon-on-insulator technology

Integrated multimode interference coupler based on silicon-on-insulator has been become a kind of more and more attractive device in optical systems. Thin cladding layers (<1.0mum) can be used in SOI waveguide due to the large index step between Si and SiO2, making them compatible with the VLSI technology. Here we demonstrate the design and fabrication of multimode interference (MMI) optical couplers and optical switches in SOI technology.