Eu3+-activated SrMoO4 phosphors for white LEDs applications: Synthesis and structural characterization

We report the synthesis of Eu3+-activated SrMoO4 phosphors by the facile nitrate-citrate gel combustion method. Powder XRD and Rietveld refinement data confirmed that these phosphors have a monophasic scheelite-type tetragonal structure with space group I4(1)/a (No. 88). FESEM micrographs indicate the agglomerated spherical particles. FTIR spectra showed four stretching and bending vibrational modes (2A(u) and 2E(u)). UV-Visible absorption spectroscopy illustrated that the optical band gap energy (E-g) values increase with increase in Eu3+ concentration. The host SrMoO4 phosphor exhibited an intense blue emission under UV excitation (368 nm). The Eu3+-activated SrMoO4 phosphors revealed characteristic luminescence due to Eu3+ ion corresponding to D-5(1) -> F-7(J) (J = 1,2) and D-5(0) -> F-7(J) (J = 1,2,3,4) transitions upon 465 nm excitation. The electric dipole transition located at 615 nm (D-5(0) -> F-7(2)) was stronger than the magnetic dipole transition located at 592 nm (D-5(0) -> F-7(1)). Intensity parameters (Omega(2), Omega(4)) and radiative properties such as transition probabilities (A(T)), radiative lifetime (tau(rad)) and branching ratio (beta) of Eu3+-activated SrMoO4 phosphors were calculated using the Judd-Ofelt theory. Based on the CIE chromaticity diagram, these phosphors can be promising materials for the development of blue and orange-red component in white LEDs. (C) 2015 Elsevier B.V. All rights reserved.

Synthesis of Eu3+-activated BaMoO4 phosphors and their Judd-Ofelt analysis: Applications in lasers and white LEDs

Eu3+-activated BaMoO4 phosphors were synthesized by the nitrate citrate gel combustion method. The Rietveld refinement analysis confirmed that all the compounds were crystallized in the scheelite-type tetragonal structure with I4(1)/a (No. 88) space group. Photoluminescence (PL) spectra of BaMoO4 phosphor reveals broad emission peaks at 465 and 605 nm, whereas the Eu3+-activated BaMoO4 phosphors show intense 615 nm (D-5(0) -> F-7(2)) emission peak. Judd-Ofelt theory was applied to evaluate the intensity parameters (Omega(2), Omega(4)) of Eu3+-activated BaMoO4 phosphors. The transition probabilities (A(T)), radiative lifetime (tau(rad)), branching ratio (beta), stimulated emission cross-section (sigma(e)), gain bandwidth (sigma(e) x Delta lambda(eff)) and optical gain (sigma(e) x tau(rad)) were investigated by using the intensity parameters. CIE color coordinates confirmed that the BaMoO4 and Eu3+-activated BaMoO4 phosphors exhibit white and red luminescence, respectively. The obtained results revealed that the present phosphors can be a potential candidate for red lasers and white LEDs applications. (C) 2015 Elsevier B.V. All rights reserved.

GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE

The issues and challenges of growing GaN-based structures on large area Si substrates have been studied. These include Si slip resulting from large temperature non-uniformities and cracking due to differential thermal expansion. Using an A1N nucleation layer in conjunction with an AlGaN buffer layer for stress management, and together with the interactive use of real time in-situ optical monitoring it was possible to realise flat, crack-free and uniform GaN and LED structures on 6-inch Si (111) substrates. The EL performance of processed LED devices was also studied on-wafer, giving good EL characteristics including a forward bias voltage of ∼3.5 V at 20 mA from a 500 μm × 500 μm device. © 2009 SPIE.

InGaN/GaN LEDs grown on Si(111): Dependence of device performance on threading dislocation density and emission wavelength

We demonstrate the growth of crack-free blue and greenemitting LED structures grown on 2-inch and 6-inch Si(111) substrates by metalorganic vapour phase epitaxy (MOVPE), using AlN nucleation layers and AlGaN buffer layers for stress management. LED device performance and its dependence on threading dislocation (TD) density and emission wavelength were studied. Despite the inherently low light extraction efficiency, an output power of 1.2 mW at 50 mA was measured from a 500 μm square planar device, emitting at 455 nm. The light output decreases dramatically as the emission wavelength increases from 455 nm to 510 nm. For LED devices emitting at similar wavelength, the light output was more than doubled when the TD density was reduced from 5×1 09 cm-2 to 2×109 cm-2. Our results clearly show that high TD density is detrimental to the overall light output, highlighting the need for further TD reduction for structures grown on Si. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.

Enhanced efficiency of near-UV emitting LEDs for solid-state lighting applications

The performance of a series of near-UV (∼385 nm) emitting LEDs, consisting of high efficiency InGaN/AlInGaN QWs in the active region, was investigated. Significantly reduced roll-over of efficiency at high current density was found compared to InGaN/GaN LEDs emitting at a similar wavelength. The importance of optical cavity effects in flip-chip geometry devices has also been investigated. The light output was enhanced by more than a factor of 2 when the lightemitting region was located at an anti-node position with respect to a high reflectivity current injection mirror. A power of 0.49 mW into a numerical aperture of 0.5 was obtained for a junction area of 50μm in diameter and a current of 30 mA, corresponding to a radiance of 30 W/cm2/str.

Structural and optical properties of nonpolar m-plane GaN and GaN-based LEDs on gamma-LiAlO2

We report the structural and optical properties of nonpolar m-plane GaN and GaN-based LEDs grown by MOCVD on a gamma-LiAlO2 (100) substrate. The TMGa, TMIn and NH3 are used as sources of Ga, In and N, respectively. The structural and surface properties of the epilayers are characterized by x-ray diffraction, polarized Raman scattering and atomic force microscopy (AFM). The films have a very smooth surface with rms roughness as low as 2nm for an area of 10 x 10 mu m(2) by AFM scan area. The XRD spectra show that the materials grown on gamma-LiAlO2 (100) have < 1 - 100 > m-plane orientation. The EL spectra of the m-plane InGaN/GaN multiple quantum wells LEDs are shown. This demonstrates that our nonpolar LED structure grown on the gamma-LiAlO2 substrate is indeed free of internal electric field. The current voltage characteristics of these LEDs show the rectifying behaviour with a turn on voltage of 1-3 V.

Analysis of defect-related localized emission processes in InGaN/GaN-based LEDs

This paper reports an extensive analysis of the defect-related localized emission processes occurring in InGaN/GaN-based light-emitting diodes (LEDs) at low reverse- and forward-bias conditions. The analysis is based on combined electrical characterization and spectrally and spatially resolved electroluminescence (EL) measurements. Results of this analysis show that: (i) under reverse bias, LEDs can emit a weak luminescence signal, which is directly proportional to the injected reverse current. Reverse-bias emission is localized in submicrometer-size spots; the intensity of the signal is strongly correlated to the threading dislocation (TD) density, since TDs are preferential paths for leakage current conduction. (ii) Under low forward-bias conditions, the intensity of the EL signal is not uniform over the device area. Spectrally resolved EL analysis of green LEDs identifies the presence of localized spots emitting at 600 nm (i.e., in the yellow spectral region), whose origin is ascribed to localized tunneling occurring between the quantum wells and the barrier layers of the diodes, with subsequent defect-assisted radiative recombination. The role of defects in determining yellow luminescence is confirmed by the high activation energy of the thermal quenching of yellow emission (Ea =0.64&eV). © 2012 IEEE.

Gigabit NRZ, CAP and optical OFDM systems over POF links using LEDs

Simulations have been performed to compare the system capacity and power dissipation of NRZ, CAP-64 and 64-QAM-OFDM systems over FEC enhanced POF links using LEDs, for both unidirectional and bidirectional transmission. It is shown that CAP-64 outperforms NRZ and 64-QAM-OFDM in terms of system capacity and supports a record high 3.5Gb/s bidirectional and 2.1Gb/s unidirectional transmissions over 50m POF. The CAP-64 transceiver consumes similar power compared with NRZ whilst the 64-QAM-OFDM transceiver consumes about twice as much. © 2012 Optical Society of America.

Comparisons between gigabit NRZ, CAP and optical OFDM systems over FEC enhanced POF links using LEDs

Simulations have been performed to compare the link power budget and power dissipation of carrierless amplitude and phase modulation-64 (CAP-64) and 64-quadrature amplitude modulation-orthogonal frequency division multiplexing (64-QAM-OFDM) systems over feedforward error correction (FEC) enhanced plastic optical fibre (POF) links using light emitting diodes (LEDs). It is shown that CAP-64 outperforms 64-QAM-OFDM and supports record high 2.1Gb/s over 50m POF transmission. The CAP-64 and 64-QAM-OFDM links consume similar powers which are 2 (2.5) times of that of NRZ for the single POF link (twin POF links) case. © 2012 IEEE.

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

The efficiency of the injection and recombination processes in InGaN/GaN LEDs is governed by the properties of the active region of the devices, which strongly depend on the conditions used for the growth of the epitaxial material. To improve device quality, it is very important to understand how the high temperatures used during the growth process can modify the quality of the epitaxial material. With this paper we present a study of the modifications in the properties of InGaN/GaN LED structures induced by high temperature annealing: thermal stress tests were carried out at 900 °C, in nitrogen atmosphere, on selected samples. The efficiency and the recombination dynamics were evaluated by photoluminescence measurements (both integrated and time-resolved), while the properties of the epitaxial material were studied by Secondary Ion Mass Spectroscopy (SIMS) and Rutherford Backscattering (RBS) channeling measurements. Results indicate that exposure to high temperatures may lead to: (i) a significant increase in the photoluminescence efficiency of the devices; (ii) a decrease in the parasitic emission bands located between 380 nm and 400 nm; (iii) an increase in carrier lifetime, as detected by time-resolved photoluminescence measurements. The increase in device efficiency is tentatively ascribed to an improvement in the crystallographic quality of the samples. © 2013 SPIE.

Si 基GaN 材料生长和LEDs 结构研制以及HVPE 生长厚膜GaN 的初步研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Improved light extraction of GaN-based LEDs with nano-roughened p-GaN surfaces

p-GaN surfaces are nano-roughened by plasma etching to improve the optical performance of GaN-based light emitting diodes (LEDs). The nano-roughened GaN present a relaxation of stress. The light extraction of the LEDs with nano-roughened surfaces is greatly improved when compared with that of the conventional LEDs without nano-roughening. PL-mapping intensities of the nano-roughened LED epi-wafers for different roughening times present two to ten orders of enhancement. The light output powers are also higher for the nano-roughened LED devices. This improvement is attributed to that nano-roughened surfaces can provide photons multiple chances to escape from the LED surfaces.