在InGaAsP/InP双异质结构中的光弹效应及其对侧向光的限制作用

从理论上计算了厚度为110nm的W_(0.95)Ni_(0.05)金属薄膜应变条在InGaAsP/InP双异质结构中形成的应力场分布，及由应力场分布引起的折射率变化。在W_(0.95)Ni_(0.05)金属薄膜应变条半导体中0.2-2μm深度范围内，由应变引起条形波导轴中央的介电常数ε相应增加2.3×10~(-1)-2.2×10~(-2)(2μm应变条宽)和1.2×10~(-1)-4.1×10~(-2)(4μm应变条宽)。同时，测量了由W_(0.95)Ni_(0.05)金属薄膜应变条所形成的InGaAs/InP双异质结光弹效应波导结构导波的近场光模分布。从理论计算和实验结果两方面证实了InGaAsP/InP双异质结光弹效应波导结构对侧向光具有良好的限制作用。

Efficient InGaAsP/InP multiple quantum well optical phase modulator for the 1.5-1.55μm fiber band

We report an InGaAsP/InP MQW phase modulator operating over the entire 1.55μm fiber band with high phase modulation efficiency and low loss modulation. The spectral dependence of the electro-refraction in a MQW structure is measured for the first time.

Electro-optic modulation of 1.5μm light in an active InGaAsP/InP quantum well waveguide

We report an InGaAsP/InP phase modulator operating in the 1.5μm wavelength band. Phase modulation of 7.5°/mA and 1.7°/mA of injected current have been measured for TE and TM polarised light respectively at a signal wavelength of 1.52 μm.

Two-photon absorption and self-phase modulation in InGaAsP/InP multi-quantum-well waveguides

We report the first measurement of two-photon absorption (TPA) and self-phase modulation in an InGaAsP/InP multi-quantum-well waveguide. The TPA coefficient, β2, was found to be 60±10 cm/GW at 1.55 μm. Despite operating at 200 nm from the band edge, self-phase modulation as high as 8±2 rad was observed for 30-ps optical pulses at 3.8-W peak input power. A theoretical calculation indicates that this enhanced phase modulation is primarily due to bandfilling in the quantum wells and the free-carrier plasma effect.

InGaAsP/InP半导体光波导开关

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

光通信用1.55微米InGaAsP/InP DH激光器中的0.95微米发光和俄歇复合

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

金属有机气相外延InGaAsP/InP应变量子阱分布反馈激光器与光放大器集

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Two-port InGaAsP/InP square resonator microlasers

Two-port InGaAsP/InP square resonator microlasers with a side length of 20 mm have been fabricated by the planar technology process, which have two 1 mu m-wide output ports connected to the vertices of the square resonator. Continuous-wave electrically injected microsquare lasers have been realised at room temperature with mode Q-factors of 1.75 x 10(4) at the threshold current.

Room-temperature photonic crystal laser in H3 cavity on InGaAsP/InP slab

We fabricate and investigate two-dimensional photonic crystal H3 microcavities in an InGaAsP slab. The lasing action at room temperature is observed. The lasering threshold is 7mW under the pulsed pump of 0.75% duty cycle. The Q factor and the lasing mode characteristics are simulated by three-dimensional finite difference time domain method. The simulation result matches well with the experiment.

Monolithic integration of an InGaAsP-InP strained DFB laser and an electroabsorption modulator by ultra-low-pressure selective-area-growth MOCVD

The design and basic characteristics of a strained InGaAsP-InP multiple-quantum-well (MQW) DFB laser monolithically integrated with an electroabsorption modulator (EAM) by ultra-low-pressure (22 mbar) selective-area-growth (SAG) MOCVD are presented. A fundamental study of the controllability and the applicability of band-gap energy by using the SAG, method is performed. A large band-gap photoluminescence wavelength shift of 88 mn. was obtained with a small mask width variation (0-30 mu m). The technique is then applied to fabricate a high performance strained MQW EAM integrated with a DFB laser. The threshold current of 26 mA at CW operation of the device with DFB laser length of 300 mu m and EAM length of 150 mu m has been realized at a modulator bias of 0 V. The devices also exhibit 15 dB on/off ratio at an applied bias voltage of 5 V.

Influences of quantum noises on direct-modulated properties of 1.3-mu m InGaAsP/InP laser diodes

Due to the zero dispersion point at 1.3-mu m in optical fibres, 1.3-mu m InGaAsP/InP laser diodes have become main light sources in fibre communication systems recently. In fluences of quantum noises on direct-modulated properties of single-mode 1.3-mu m InGaAsP/InP laser diodes are investigated in this article. Considering the carrier and photon noises and the cross-correlation between the two noises, the power spectrum of the photon density and the signal-to-noise ratio (SNR) of the direct-modulated single-mode laser system are calculated using the linear approximation method. We find that the stochastic resonance (SR) always appears in the dependence of the SNR on the bias current density, and is strongly affected by the cross-correlation coeffcient between the carrier and photon noises, the frequency of modulation signal, and the photon lifetime in the laser cavity. Hence, it is promising to use the SR mechanism to enhance the SNR of direct-modulated InGaAsP/InP laser diodes and improve the quality of optical fibre communication systems.