974 resultados para INVERSION-LAYERS


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In this paper, we study the Einstein relation for the diffusivity to mobility ratio (DMR) in n-channel inversion layers of non-linear optical materials on the basis of a newly formulated electron dispersion relation by considering their special properties within the frame work of k.p formalism. The results for the n-channel inversion layers of III-V, ternary and quaternary materials form a special case of our generalized analysis. The DMR for n-channel inversion layers of II-VI, IV-VI and stressed materials has been investigated by formulating the respective 2D electron dispersion laws. It has been found, taking n-channel inversion layers of CdGeAs2, Cd(3)AS(2), InAs, InSb, Hg1-xCdxTe, In1-xGaxAsyP1-y lattice matched to InP, CdS, PbTe, PbSnTe, Pb1-xSnxSe and stressed InSb as examples, that the DMR increases with the increasing surface electric field with different numerical values and the nature of the variations are totally band structure dependent. The well-known expression of the DMR for wide gap materials has been obtained as a special case under certain limiting conditions and this compatibility is an indirect test for our generalized formalism. Besides, an experimental method of determining the 2D DMR for n-channel inversion layers having arbitrary dispersion laws has been suggested.

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An attempt is made to study the two dimensional (2D) effective electron mass (EEM) in quantum wells (Qws), inversion layers (ILs) and NIPI superlattices of Kane type semiconductors in the presence of strong external photoexcitation on the basis of a newly formulated electron dispersion laws within the framework of k.p. formalism. It has been found, taking InAs and InSb as examples, that the EEM in Qws, ILs and superlattices increases with increasing concentration, light intensity and wavelength of the incident light waves, respectively and the numerical magnitudes in each case is band structure dependent. The EEM in ILs is quantum number dependent exhibiting quantum jumps for specified values of the surface electric field and in NIPI superlattices; the same is the function of Fermi energy and the subband index characterizing such 2D structures. The appearance of the humps of the respective curves is due to the redistribution of the electrons among the quantized energy levels when the quantum numbers corresponding to the highest occupied level changes from one fixed value to the others. Although the EEM varies in various manners with all the variables as evident from all the curves, the rates of variations totally depend on the specific dispersion relation of the particular 2D structure. Under certain limiting conditions, all the results as derived in this paper get transformed into well known formulas of the EEM and the electron statistics in the absence of external photo-excitation and thus confirming the compatibility test. The results of this paper find three applications in the field of microstructures. (C) 2011 Elsevier Ltd. All rights reserved.

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Intersubband absorption energy shifts in 3-level system stemming from depolarization and excitonlike effects are investigated. Analytically, the expressions we derive present good explanations to the conventional 2-level results and bare potential transition energy results; and numerical results show that they are more exact than the previous studies to describe the 3-level system depolarization and excitonlike shift (DES) character especially for higher carrier density (more than 8 x 10(11) cm(-2)). One interesting detail we find is that the "large blue" DES becomes "slight redshift" in the low doping limit (less than 1.9 x 10(11) cm(-2)), which may be neglected by the previous studies of intersubband transitions. Temperature character of DES in the step well structure is also numerically studied. Finally the above are applied to calculate asymmetric step quantum well structures. The two main functional aspects of terahertz (THz) emitters are discussed and several basic optimizing conditions are considered. By adjusting the well geometry parameters and material composition systematically, some optimized structures which satisfy all of the six conditions are recommended in tables. These optimizations may provide useful references to the design of 3-level-based optically pumping THz emitters.

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In this work, we study the effects of a longitudinal periodic potential on a parabolic quantum wire defined in a two-dimensional electron gas with Rashba spin-orbit interaction. For an infinite wire superlattice we find, by direct diagonalization, that the energy gaps are shifted away from the usual Bragg planes due to the Rashba spin-orbit interaction. Interestingly, our results show that the location of the band gaps in energy can be controlled via the strength of the Rashba spin-orbit interaction. We have also calculated the charge conductance through a periodic potential of a finite length via the nonequilibrium Green's function method combined with the Landauer formalism. We find dips in the conductance that correspond well to the energy gaps of the infinite wire superlattice. From the infinite wire energy dispersion, we derive an equation relating the location of the conductance dips as a function of the (gate controllable) Fermi energy to the Rashba spin-orbit coupling strength. We propose that the strength of the Rashba spin-orbit interaction can be extracted via a charge conductance measurement.

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The multi-layers feedforward neural network is used for inversion of material constants of fluid-saturated porous media. The direct analysis of fluid-saturated porous media is carried out with the boundary element method. The dynamic displacement responses obtained from direct analysis for prescribed material parameters constitute the sample sets training neural network. By virtue of the effective L-M training algorithm and the Tikhonov regularization method as well as the GCV method for an appropriate selection of regularization parameter, the inverse mapping from dynamic displacement responses to material constants is performed. Numerical examples demonstrate the validity of the neural network method.

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For both, (Al,Ga)N with low Al content grown on a GaN nucleation layer and (AI,Ga)N with high Al content gown on an AlN nucleation layer, the inhomogeneous distribution of the luminescence is linked to the distribution of defects, which may be due to inversion domains. In the former system, defect regions exhibit a much lower Al content than the nominal one leading to a splitting of the respective luminescence spectra. In the latter system, a domain-like growth is observed with a pyramidal surface morphology and non-radiative recombination within the domain boundaries. (c) 2007 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.

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Phase transformation and subdomain structure in [0001]-oriented gallium nitride (GaN) nanorods of different sizes are studied using molecular dynamics simulations. The analysis concerns the structure of GaN nanorods at 300 K without external loading. Calculations show that a transformation from wurtzite to a tetragonal structure occurs along {0110} lateral surfaces, leading to the formation of a six-sided columnar inversion domain boundary (IDB) in the [0001] direction of the nanorods. This structural configuration is similar to the IDB structure observed experimentally in GaN epitaxial layers. The transformation is significantly dependent on the size of the nanorods.

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Layer-by-layer (LBL) films of nickel tetrasulfonated phthalocyanine (NiTsPc) alternated with poly(allylamine hydrochloride) (PAH) have been prepared, whose surface charge has been evaluated using surface potential measurements. From adsorption kinetics results, we obtained the immersion time of similar to 40 s, which was used to assemble layers of NiTsPc. The effect of gold (Au) and aluminum (Al) electrodes on the charge behavior was examined. We found that the surface potential (i.e. surface charge) was inverted each time a layer of PAH was alternated with another of NiTsPc molecules for the two types of electrodes, which was attributed to charge overcompensation between positive charges of PAH molecules, and negative charges from NiTsPc molecules. (C) 2009 Elsevier B.V. All rights reserved.

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This paper presents a gravimetric study (based on 382 gravimetric stations in an area about 32 km2) of a nearly flat basin: the Low Andarax valley. This alluvial basin, close to its river mouth, is located in the extreme south of the province of Almería and coincides with one of the existing depressions in the Betic Cordillera. The paper presents new methodological work to adapt a published inversion approach (GROWTH method) to the case of an alluvial valley (sedimentary stratification, with density increase downward). The adjusted 3D density model reveals several features in the topography of the discontinuity layers between the calcareous basement (2,700 kg/m3) and two sedimentary layers (2,400 and 2,250 kg/m3). We interpret several low density alignments as corresponding to SE faults striking about N140?145°E. Some detected basement elevations (such as the one, previously known by boreholes, in Viator village) are apparently connected with the fault pattern. The outcomes of this work are: (1) new gravimetric data, (2) new methodological options, and (3) the resulting structural conclusions.

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Analogue modelling experiments using brittle materials are performed to study the inversion of extensional structures. Asymmetric grabens of two different orientations are first created during a phase of extension and progressively filled. They are subsequently shortened in the same direction. The aim of our experiments is to determine factors affecting the style of deformation during inversion. We specifically investigate variations in thickness and distribution of strong and weak layers constituting the graben fill and in initial basin orientation. The main advantage of our experimental set-up is that we have a complete control on graben location, width, infill and orientation before inversion. The experiments show that shortening results only in limited reactivation of pre-existing normal faults. In general, forward thrusts and backthrusts cut across normal faults into the footwall of the graben. The forward thrusts either propagate parallel to the enveloping surface of faulted blocks or they cut across basin-limiting normal faults at various angles. The graben fill is mechanically extruded by displacement along forward thrusts that accommodate most of the shortening. Both pre-existing faults and weak graben fill act as zones of weakness during inversion and determine the orientation and location of both backthrusts and forward thrusts. The results of our experiments conform well to natural examples of inverted graben structures.