Reactive reinforcement of the interface of poly(ether sulfone)/poly(phenylene sulfide) polymer blend by PMR-POI

The effect of polymerization of monomer reactant-polyimide (POI) as the interfacial agent on the interface characteristics, morphology features, and crystallization of poly(ether sulfone)/poly(phenylene sulfide) (PES/PPS) blends were investigated using a scanning electron microscope, FTIR, WAXD, and XPS surface analysis. It was found that the interfacial adhesion was enhanced, the particle size of the dispersed phase was reduced, and the miscibility between PES and PPS was improved by the addition of POI. It was also found that POI was an effective nucleation agent of the crystallization for PPS.

Reactive reinforcement of the interface of high performance polymer blends by PMR-POI

The effect of PMR-polyimide(POI) as the interfacial agent on the interface characteristics, morphology features and crystallization of poly (ether sulfone) /poly (phenylene sulfide) (PES/PPS) and poly(ether ether ketone)/poly (ether sulfone) (PEEK/PES) partly miscible blends were investigated by means of the scanning electron microscopy, WAXD and XPS surface analysis. It is found that the interfacial adhesion was enhanced remarkably, the size of the dispersed phase particles was reduced significantly and the miscibility was improved by the addition of POI. During melt blending cross-link and/or grafting reaction of POI with PES, PEEK and PPS homopolymers was detected, however the reaction activity of POI with PPS was much higher than that of PES and PEEK. It was also found that POI was an effective nucleation agent of the crystallization of PPS.

Efeitos de interface em bicamadas magnéticas acopladas

We have developed a theoretical study of magnetic bilayers composed by a ferromagnetic film grown in direct contact on an antiferromagnetic one. We have investigated the interface effects in this systems due to the interfilms coupling. We describe the interface effects by a Heisenberg like coupling with an additional unidirectional anisotropy. In the first approach we assume that the magnetic layers are thick enough to be described by the bulk parameters and they are coupled through the interaction between the magnetic moments located at the interface. We use this approach to calculate the modified dynamical response of each material. We use the magnetic permeability of the layers (with corrections introduced by interface interactions) to obtain a correlation between the interface characteristics and the physical behavior of the magnetic excitations propagating in the system. In the second model, we calculated an effective susceptibility of the system considering a nearly microscopical approach. The dynamic response obtained by this approach was used to study the modifications in the spectrum of the polaritons and its consequences on the attenuated total reflection (ATR). In addition, we have calculated the oblique reflectivity. We compare our result with those obtained for the dispersion relation of the magnetostatic modes in these systems

Effect of bur type and conditioning on the surface and interface of dentine

The purpose of this in vitro study was to evaluate the surface and resin-dentine interface characteristics of permanent tooth dentine cut with diamond or carbide burs and treated with phosphoric acid (PA) or an acidic conditioner. Labial surfaces of permanent incisors were prepared into dentine with high-speed carbide or diamond burs and divided into two halves. Phosphoric acid 36% was applied on one half and non-rinse conditioner (NRC) was applied on the other half. Ten randomly selected scanning electron microscopy (SEM) fields from each specimen (n = 15) were evaluated. Occlusal surfaces of third molars were divided in two halves for evaluation of the resin-dentine interface. The halves were randomly assigned to one of each conditioner and restored with Prime & Bond NT/Spectrum. Ten specimens were analysed by SEM to evaluate hybrid layer formation and interfacial seal. We observed that surfaces prepared with carbide bur presented less residual smear plugs (P < 0.05) than surfaces prepared with diamond burs. Surfaces conditioned with NRC, which is a smear layer modifier, presented more residual smear plugs than surfaces conditioned with PA (P < 0.05). Treatment with PA resulted in more sealed interfaces than specimens treated with NRC. Within the limitations of this study the results showed that carbide burs leave a surface that is more conducive to bonding than diamond burs.

Microstructures and strengthening mechanisms of Cu/Ni/W nanolayered composites

Cu/Ni/W nanolayered composites with individual layer thickness ranging from 5nm to 300nm were prepared by a magnetron sputtering system. Microstructures and strength of the nanolayered composites were investigated by using the nanoindentation method combined with theoretical analysis. Microstructure characterization revealed that the Cu/Ni/W composite consists of a typical Cu/Ni coherent interface and Cu/W and Ni/W incoherent interfaces. Cu/Ni/W composites have an ultrahigh strength and a large strengthening ability compared with bi-constituent Cu–X(X¼Ni, W, Au, Ag, Cr, Nb, etc.) nanolayered composites. Summarizing the present results and those reported in the literature, we systematically analyze the origin of the ultrahigh strength and its length scale dependence by taking into account the constituent layer properties, layer scales and heterogeneous layer/layer interface characteristics, including lattice and modulus mismatch as well as interface structure.

Numerical and experimental study of the thermal behaviour of coining and upsetting processes

A numerical simulation technique has been employed to study the thermal behavior of hot-forging type forming processes. Experiments on the coining and upsetting of an aluminum billet were conducted to validate the numerical predictions. Typical forming conditions for both the coining and upsetting processes were then studied in detail. an electrical analogy scheme was used to determine the thermal contact resistance. This scheme can conviniently provide the interface characteristics for typical processing conditions, which normally involve high pressures and temperatures. A single forging cycle was first considered, and then a batch of twenty-five forgings was studied. Each forging cycle includes the billet mounting, ascent, loading, dwelling, unloading, descent, and billet removal stages. The temperature distribution in the first forging to be formed is found to be significantly different from that at the end of the batch. In industry, forging is essentially a batch operation. The influence of forming speed and reduction on thermal characteristics was investigated also. The variations that can occur in the process design by considering differences in temperature characteristics are discussed also.

Influence of GaAsP insertion layers on performance of InGaAsP/InGaP/AlGaAs quantum-well laser

We report on the use of very thin GaAsP insertion layers to improve the performance of an InGaAsP/InGaP/AlGaAs single quantum-well laser structure grown by metal organic chemical vapour deposition. Compared to the non-insertion structure, the full width at half maximum of photoluminescence spectrum of the insertion structure measured at room temperature is decreased from 47 to 38 nm indicating sharper interfaces. X-ray diffraction shows that the GaAsP insertion layers between AlGaAs and InGaP compensates for the compressive strain to improve the total interface. The laser performance of the insertion structure is significantly improved as compared with the counterpart without the insertion layers. The threshold current is decreased from 560 to 450mA while the slope efficiency is increased from 0.61 to 0.7W/A and the output power is increased from 370 to 940mW. The slope efficiency improved is very high for the devices without coated facets. The improved laser performance is attributed to the suppression of indium carry-over due to the use of the GaAsP insertion layers.

First principles modelling of nucleation and growth during atomic layer deposition onto III-V substrates

Atomic layer deposition (ALD) is now used in semiconductor fabrication lines to deposit nanometre-thin oxide films, and has thus enabled the introduction of high-permittivity dielectrics into the CMOS gate stack. With interest increasing in transistors based on high mobility substrates, such as GaAs, we are investigating the surface treatments that may improve the interface characteristics. We focus on incubation periods of ALD processes on III-V substrates. We have applied first principles Density Functional Theory (DFT) to investigate detailed chemistry of these early stages of growth, specifically substrate and ALD precursor interaction. We have modelled the ‘clean-up’ effect by which organometallic precursors: trimethylaluminium (TMA) or hafnium and titanium amides clean arsenic oxides off the GaAs surface before ALD growth of dielectric commences and similar effect on Si3N4 substrate. Our simulations show that ‘clean-up’ of an oxide film strongly depends on precursor ligand, its affinity to the oxide and the redox character of the oxide. The predominant pathway for a metalloid oxide such as arsenic oxide is reduction, producing volatile molecules or gettering oxygen from less reducible oxides. An alternative pathway is non-redox ligand exchange, which allows non-reducible oxides (e.g. SiO2) to be cleaned-up. First principles study shows also that alkylamides are more susceptible to decomposition rather than migration on the oxide surface. This improved understanding of the chemical principles underlying ‘clean-up’ allows us to rationalize and predict which precursors will perform the reaction. The comparison is made between selection of metal chlorides, methyls and alkylamides precursors.

Thickness dependence of leakage current in BaBi2Ta2O9 thin films

BaBi2Ta2O9 thin films having a layered structure were fabricated by metalorganic solution deposition technique. The films exhibited good structural, dielectric, and insulating properties. The room temperature resistivity was found to be in the range of 10(12)-10(14) Omega cm up to 4 V corresponding to a field of 200 kV/cm across the capacitor for films annealed in the temperature range of 500-700 degrees C. The current-voltage (I-V) characteristics as a function of thickness for films annealed at 700 degrees C for 1 h, indicated bulk limited conduction and the log(I) vs V-1/2 characteristics suggested a space-charge-limited conduction mechanism. The capacitance-voltage measurements on films in a metal-insulator-semiconductor configuration indicated good Si/BaBi2Ta2O9 interface characteristics and a SiO2 thickness of similar to 5 nm was measured and calculated. (C) 1999 American Institute of Physics. [S0003-6951(99)00830-X].

Synthesis and electrical characterization of CaBi2Nb2O9 thin films deposited on Pt/Ti/SiO2/Si substrates by polymeric precursor method

We report the successful deposition of CaBi2Nb2O9 (CBN) thin films on platinum coated silicon substrates by polymeric precursor method. The CBN thin films exhibited good structural, dielectric and CBN/Pt interface characteristics. The leakage current of the capacitor structure was around 0.15 A cm(-2) at an applied electric field of 30 kV cm(-1). The capacitance-voltage measurements indicated good ferroelectric polarization switching characteristics. The typical measured small signal dielectric constant and the dissipation factor at a frequency of 100 kHz were 90 and 0.053, respectively. The remanent polarization and the drive voltage values were 4.2 C cm(-2) and 1.7 V at an applied voltage of 10 V. No significant fatigue was observed at least up to 10(8) switching cycles. (c) 2005 Elsevier B.V. All rights reserved.

Size-dependent radiation tolerance in ion irradiated TiN/AlN nanolayer films

Interface effects on ion-irradiation tolerance properties are investigated in nanolayered TiN/AlN films with individual layer thickness varied from 5 nm to 50 nm, prepared by pulsed laser deposition. Evolution of the microstructure and hardness of the multilayer films are examined on the specimens before and after He ion-implantation to a fluence of 4 × 10 m at 50 keV. The suppression of amorphization in AlN layers and the reduction of radiation-induced softening are observed in all nanolayer films. A clear size-dependent radiation tolerance characteristic is observed in the nanolayer films, i.e., the samples with the optimum layer thickness from 10 nm to 20 nm show the best ion irradiation tolerance properties, and a critical layer thickness of more than 5 nm is necessary to prevent severe intermixing. This study suggests that both the interface characteristics and the critical length scale (layer thickness) contribute to the reduction of the radiation-induced damages in nitride-based ceramic materials. © 2013 Elsevier B.V. All rights reserved.

Characteristics of the interface of a laser-quenched steel substrate and chromium electroplate

The interface of a laser-discrete-quenched steel substrate and as-deposited chromium electroplate was investigated by ion beam etching, dissolving-substrate-away and using a Vickers microhardness tester, in an attempt to reveal the mechanism that the service life of the chromium-coated parts is increased by the duplex technique of laser pre-quenching plus chromium post-depositing. The laser quenching of the steel substrate can reduce the steep hardness gradient at the substrate/chromium interface and improve the load-bearing capacity of chromium electroplate. Moreover, the laser quenching prior to plating has an extremely great effect on the morphologies and microstructure of the substrate/chromium interface: there is a transient interlayer at the original substrate/chromium interface while there is not at the laser-quenchedzone/chromium interface; the near-substrate surface microstructure and morphologies of the free-standing chromium electrodeposits, whose substrate was dissolved away with nital 30% in volume, inherit the periodically gradient characteristics of the laser-discrete-quenched substrate surface. (c) 2006 Elsevier B.V. All rights reserved.