Thermal Treatments of Fe—Mn Alkoxide of Glycerol: Infrared absorption and emission

Synthetic Fe—Mn alkoxide of glycerol samples are submitted to controlled heating conditions and examined by IR absorption spectroscopy. On the other hand, the same sample is studied by infrared emission spectroscopy (IRES), upon heating in situ from 100 to 600°C. The spectral techniques employed in this contribution, especially IRES, show that as a result of the thermal treatments ferromagnetic oxides (manganese ferrite) are formed between 350 and 400°C. Some further spectral changes are seen at higher temperatures.

Polarized infrared absorption spectrum of matrix-isolated methylperoxyl radicals, CH3OO (X)over-tilde 2A ''

We have used a tandem pair of supersonic nozzles to produce clean samples of CH3OO radicals in cryogenic matrices. One hyperthermal nozzle decomposes azomethane (CH3NNCH3) to generate intense pulses of CH3 radicals, While the second nozzle alternately fires a burst Of O-2/Ar at the 20 K matrix. The CH3/O-2/20 K argon radical sandwich acts to produce target methylperoxyl radicals: CH3 + O-2 --> CH3OO. The absorption spectra of the radicals are monitored with a Fourier transform infrared spectrometer. We report 10 of the 12 fundamental infrared bands of the methylperoxyl radical CH3OO, (X) over tilde (2)A", in an argon matrix at 20 K. The experimental frequencies (cm(-1)) and polarizations follow: the a' modes are 3032, 2957, 1448, 1410, 1180, 1109, 90, 492, while the a" modes are 3024 and 1434. We cannot detect the asymmetric CH3 rocking mode, nu(11), nor the torsion, nu(12). The infrared spectra of (CH3OO)-O-18-O-18, (CH3OO)-C-13, and CD3OO have been measured as well in order to determine the isotopic shifts. The experimental frequencies, {nu}, for the methylperoxyl radicals are compared to harmonic frequencies, {omega}, resulting from a UB3LYP/6-311G(d,p) electronic structure calculation. Linear dichroism spectra were measured with photooriented radical samples in order to establish the experimental polarizations of most vibrational bands. The methylperoxyl radical matrix frequencies listed above are within +/-2% of the gas-phase vibrational frequencies. A final set of vibrational frequencies for the H radical, are recommended. See also http://ellison.colorado.edu/methylperoxyl.

Infrared absorption spectra of As-Se glasses

IR absorption spectra of As-Se glasses have been studied over a wide range of compositions. Various two-phonon, multiphonon (combination tones) and impurity absorptions have been identified. Compositional variation of relative band intensities has been explained in terms of the chemically ordered network model.

Infrared absorption spectra of single crystals of glycine silver nitrate and monoglycine nitrate

he infrared absorption spectra of glycine silver nitrate (GAgNO3) and glycine nitrate (GHNO3) show that the glycine group exists completely in the zwitter ion form in the former and in both forms in the latter. The spectrum of GAgNO3 at liquid air temperature did not reveal any striking change which can be attributed to a freezing of the rapid reorientation of the NH3+ group taking place at higher temperatures. The position of the COO− stretching frequencies indicate that this group is co-ordinated only weakly to the Ag+ ion. The summation frequencies reported by Schroeder, Wier and Lippincott (1962) for AgNO3 were not observed in the present study on GAgNO3. It shows however that ferroelectricity in GAgNO3 is in all probability due to the motion of the Ag+ ion in the oxygen co-ordination polyhedron and is not directly connected with the ordering of the hydrogen bonds below Curie point.

Infrared absorption studies on some derivatives of xanthic, dithiocarbamic and trithiocarbonic acids

The infrared absorption spectra of some of the derivatives of xanthic Image dithiocarbamic Image and trithiocarbonic Image acids are studied in the sodium chloride optics region and the bands assigned to group frequencies. The position of C---O---C and C=S bands in the derivatives of xanthic acid has been discussed from theoretical and experimental evidences and it is suggested that the two strong bands around 1200 and 1030 cm−1 are due to the Image group. The bands around 980 and 1050 cm−1 in the derivatives of dithiocarbamic and trithiocarbonic acids respectively have been assigned to C=S group frequencies. These bands shift to lower frequency in the corresponding ionic compounds while the bands around 1030 and 1200 cm−1 in the ionic compounds of xanthic acid shift to higher and lower frequencies respectively.

Direct Infrared Absorption Spectroscopy of Benzene Dimer

The direct infrared (IR) absorption spectrum of benzene dimer formed in a free-jet expansion was recorded in the 3.3 mu m region for the first time. This has led to the observation of the C H stretching fundamental mode nu(13) (B(1u)), which is both IR and Raman forbidden in the monomer. Moreover, the IR forbidden and Raman allowed nu(7) (E(2g)) mode has been observed as well. These two modes were found to be red-shifted along with the IR allowed nu(20) (E(1u)) mode, as previously reported by Erlekam et al. [Erlekam; Frankowski; Meijer; Gert von Helden J. Chem. Phys. 2006, 124, 171101], using ion-dip spectroscopy, contrary to the blue-shift predicted earlier by theoretical studies. The observation of the nu(13) band indicates that the symmetry is reduced in the dimer, confirming the T-shaped structure observed by Erlekam et al. Our experimental results have not provided any direct evidence for the presence of the parallel displaced geometry, the main objective of the present work, as predicted by theoretical calculations.

Enhanced infrared absorption of spatially ordered quantum dot arrays

We have investigated the intersubband absorption for spatially ordered and non-ordered quantum dots (QDs). It is found that the intersubband absorption of spatially ordered QDs is much stronger than that of non-ordered QDs. The enhanced absorption is attributed to the improved size uniformity concurrent with the spatial ordering for the growth condition employed. For the FTIR measurement under normal incidence geometry, using a undoped sample as reference can remove the interference effect due to multiple reflections. (c) 2006 Elsevier B.V. All rights reserved.

Infrared absorption efficiency in AlAs/AlxGa1-xAs type-II multiple-quantum-well structure grown on (211) GaAs substrate

We have made a normal incidence high infrared absorption efficiency AlAs/Al0.55Ga0.45As multiple-quantum-well structure grown on (211) GaAs substrates by molecular beam epitaxy (MBE). A strong infrared absorption signal at 11.6 mu m due to the transition of the ground state to the first excited state, and a small signal at 6.8 mu m due to the transition from the ground state to continuum. were observed. A 45 degrees tilted incidence measurement was also performed on the same sample for the comparison with a normal incidence measurement. Both measurements provide important information about the quantum well absorption efficiency. Efficiencies which evaluate the absorption of electric components perpendicular and parallel to the well plane are eta(perpendicular to) = 25% and eta(parallel to) = 88%, respectively. The total efficiency is then deduced to be eta = 91%. It is apparent that the efficiency eta(parallel to) dominates the total quantum efficiency eta Because an electron in the (211) AlAs well has a small effective mass (m(zx)* or m(zy)*), the normal incidence absorption coefficient is expected to be higher:than that grown on (511) and (311) substrates. Thus, in the present study, we use the (211) substrate to fabricate QWIP. The experimental results indicate the potential of these novel structures for use as normal incidence infrared photodetectors.

Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers

Self-organized InGaAs/GaAs quantum dots (QDs) stacked multilayers have been prepared by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy shows that the InGaAs QDs are nearly perfectly vertically aligned in the growth direction [100]. The filtering effect on the QDs distribution is found to be the dominant mechanism leading to vertical alignment and a highly uniform size distribution. Moreover, we observe a distinct infrared absorption from the sample in the range of 8.6-10.7 mu m. This indicates the potential of QDs multilayer structure for use as infrared photodetector.

Normally incident infrared absorption in vertically aligned InGaAs/GaAs quantum dot superlattice

30-period InGaAs/GaAs quantum dot superlattice was fabricated by MBE. Using cross sectional transmission electron microscopy, the InGaAs quantum dots were found to be perfectly vertically aligned in the growth direction (100). Under normally incident radiation, a distinct absorption in the 8.5 similar to 10.4 mu m range peaked at 9.9 mu m was observed. The normally incident infrared absorption in vertically aligned quantum dot superlattice in the 8 similar to 12 mu m range was realized for the first time. This result indicates the potential application of the quantum dot superlattice structure without grating as normally incident infrared detector focal plane arrays.

Linewidth of the infrared absorption spectra due to bound-to-continuum transition in GaAs/AlxGa1-xAs multiple quantum well structures

We have observed an extremely narrow absorption spectrum due to bound-to-continuum transition in GaAs/AlxGa1-xAs multiple quantum wells (MQWs). Its linewidth is only about one tenth of the values reported previously. Our calculation indicates that the broadening of the excited state in the continuum has little contribution to the absorption linewidth. We have grown a sample whose MQW region contains two kinds of wells with a minor thickness inhomogeneity. Its resultant absorption linewidth is six times as large as that of homogeneous well sample, which is in good agreement with our theoretical analysis. Thus we can suggest that the wider absorption spectra reported by many authors may be due to the well width inhomogeneity. (C) 1998 American Institute of Physics. [S0003-6951(98)03430-5]

Study of microstructure of high stability hydrogenated amorphous silicon films by Raman scattering and infrared absorption spectroscopy

The microstructure, hydrogen bonding configurations and hydrogen content of high quality and stable hydrogenated amorphous silicon (a-Si:H) films prepared by a simple ''uninterrupted growth/annealing" plasma enhanced chemical vapor deposition technique have been investigated by Raman scattering and infrared absorption spectroscopy. The high stability a-Si:H films contain small amounts of a microcrystalline phase and not less hydrogen (10-16 at. %), particularly, the clustered phase hydrogen, Besides, the hydrogen distribution is very inhomogeneous. Some of these results are substantially distinct from those of conventional device-quality n-Si:H film or stable cr-Si:H films prepared by the other techniques examined to date. The stability of n-Si:H films appears to have no direct correlation with the hydrogen content or the clustered phase hydrogen concentration. The ideal n-Si:H network with high stability and low defect density is perhaps not homogeneous. (C) 1998 American Institute of Physics.

Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice

The authors report for the first time, normal incident infrared absorption around the wavelength of 13-15 mu m from a 20 period InGaAs/GaAs quantum dot supperlatice (QDS). The structure of a QDS has been-confirmed by cross-section transmission electron microscopy (TEM) and by a photoluminescence spectrum (PL). This opens the way to high performance 8-14 mu m quantum dot infrared detectors.

INFRARED-ABSORPTION DUE TO 2-DIMENSIONAL-ELECTRON-GAS COLLECTIVE EXCITATION IN GAAS/ALXGA1-XAS MULTIPLE-QUANTUM-WELL STRUCTURES

Infrared absorption due to a collective excitation of a two-dimensional electronic gas was observed in GaAs/AlxGa1-xAs multiple-quantum wells when the incident light is polarized parallel to the quantum-well plane. We attribute this phenomenon to a plasma oscillation in the quantum wells. The measured wavelength of the absorption peak due to the plasma oscillation agrees with our theoretical analysis. In addition, in this study the plasma-phonon coupling effect is also fitted to the experimental result. We show that the absorption is not related to the intersubband transitions but to the intrasubband transition, which originates from a plasma oscillation.