Normally incident infrared absorption in vertically aligned InGaAs/GaAs quantum dot superlattice
Data(s) |
1998
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Resumo |
30-period InGaAs/GaAs quantum dot superlattice was fabricated by MBE. Using cross sectional transmission electron microscopy, the InGaAs quantum dots were found to be perfectly vertically aligned in the growth direction (100). Under normally incident radiation, a distinct absorption in the 8.5 similar to 10.4 mu m range peaked at 9.9 mu m was observed. The normally incident infrared absorption in vertically aligned quantum dot superlattice in the 8 similar to 12 mu m range was realized for the first time. This result indicates the potential application of the quantum dot superlattice structure without grating as normally incident infrared detector focal plane arrays. |
Identificador | |
Idioma(s) |
中文 |
Fonte |
Zhuang QD; Li JM; Zeng YP; Pan L; Kong MY; Lin LY .Normally incident infrared absorption in vertically aligned InGaAs/GaAs quantum dot superlattice ,JOURNAL OF INFRARED AND MILLIMETER WAVES ,1998,17(6):477-480 |
Palavras-Chave | #光电子学 #quantum dot #superlattice #infrared absorption #SYSTEMS #GROWTH #GAAS #INP #ISLANDS |
Tipo |
期刊论文 |