Hydrogen-induced changes in the breakdown voltage of InP HEMTs

In this work, electrical measurements show that the breakdown voltage,BVDG, of InP HEMTs increases following exposure to H2. This BVDG shift is nonrecoverable. The increase in BVDG is found to be due to a decrease in the carrier concentration in the extrinsic portion of the device.We provide evidence that H2 reacts with the exposed InAlAs surface in the extrinsic region next to the gate, changing the underlying carrier concentration. Hall measurements of capped and uncapped HEMT samples show that the decrease in sheet carrier concentration can be attributed to a modification of the exposed InAlAs surface. Consistent with this, XPS experiments on uncapped heterostructures give evidence of As loss from the InAlAs surface upon exposure to hydrogen.

Electron tunneling in heavily In-doped polycrystalline CdS films

The electrical properties of heavily In‐doped polycrystalline CdS films have been studied as a function of the doping level. The films were prepared by vacuum coevaporation of CdS and In. Conductivity and Hall measurements were performed over the temperature range 77-400 K. The conductivity decreases weakly with the temperature and shows a tendency towards saturation at low temperatures. A simple relationship σ=σ0(1+βT2) is found in the low‐temperature range. The temperature dependence of the mobility is similar to that of the conductivity since the Hall coefficient is found to be a constant in the whole temperature range. We interpret the experimental results in terms of a modified version of grain‐boundary trapping Seto"s model, taking into account thermionic emission and tunneling of carriers through the potential barriers. The barriers are found to be high and narrow, and tunneling becomes the predominating transport mechanism.

Transparent p-AgCoO2/n-ZnO diode heterojunction fabricated by pulsed laser deposition

Transparent diode heterojunction on ITO coated glass substrates was fabricated using p-type AgCoO2 and n-type ZnO films by pulsed laser deposition (PLD). The PLD of AgCoO2 thin films was carried out using the pelletized sintered target of AgCoO2 powder, which was synthesized in-house by the hydrothermal process. The band gap of these thin films was found to be ~3.89 eV and they had transmission of~55% in the visible spectral region. Although Hall measurements could only indicate mixed carrier type conduction but thermoelectric power measurements of Seebeck coefficient confirmed the p-type conductivity of the grown AgCoO2 films. The PLD grown ZnO films showed a band gap of ~3.28 eV, an average optical transmission of ~85% and n-type carrier density of~4.6×1019 cm− 3. The junction between p-AgCoO2 and n-ZnO was found to be rectifying. The ratio of forward current to the reverse current was about 7 at 1.5 V. The diode ideality factor was much greater than 2.

Evidence of defect-mediated magnetic coupling on hydrogenated Co-doped ZnO

Hydrogenated bulk Zn1-xCoxO samples were synthesized via standard solid-state reaction route with Co molar concentrations up to 15 at.%. Magnetic characterization demonstrates a room temperature ferromagnetic behavior associated to a paramagnetic Curie-Weiss component. Detailed microstructural analysis was carried out to exclude the presence of extrinsic sources of ferromagnetism. The magnetization increases linearly as a function of Co concentration. Hall measurements reveal an insulating character for the whole set of samples. In this context, the defect mediated magnetic coupling between the Co atoms under the scope of the bound magnetic polarons model is used to interpret the observed room temperature ferromagnetism. © 2012 Elsevier B.V. All rights reserved.

Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method

LaNiO3 thin films were deposited on SrLaAlO4 (1 0 0) and SrLaAlO4 (0 0 1) single crystal substrates by a chemical solution deposition method and heat-treated in oxygen atmosphere at 700° C in tube oven. Structural, morphological, and electrical properties of the LaNiO 3 thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and electrical resistivity as temperature function (Hall measurements). The X-ray diffraction data indicated good crystallinity and a structural preferential orientation. The LaNiO3 thin films have a very flat surface and no droplet was found on their surfaces. Samples of LaNiO3 grown onto (1 0 0) and (0 0 1) oriented SrLaAlO4 single crystal substrates reveled average grain size by AFM approximately 15-30 nm and 20-35 nm, respectively. Transport characteristics observed were clearly dependent upon the substrate orientation which exhibited a metal-to-insulator transition. The underlying mechanism is a result of competition between the mobility edge and the Fermi energy through the occupation of electron states which in turn is controlled by the disorder level induced by different growth surfaces. © 2013 Elsevier Ltd and Techna Group S.r.l.

Molekulare und supramolekulare Eigenschaften von neuen Donor-Akzeptor-Polymeren

Die organische Halbleitertechnologie befindet sich seit Jahrzehnten im Focus des Interesses, da sie eine kostengünstige und umweltverträgliche Alternative zu anorganischen Silizium-basierten Halbleitern darstellt. Die Möglichkeit der gezielten Funktionalisierung von definierten Strukturen durch synthetische Methoden, welche eine große Vielfalt an Materialien ermöglicht, steht dabei besonders im Vordergrund. Die Modifikation von physikalischen Eigenschaften ermöglicht dabei eine stark erleichterte Anpassung für den geplanten Anwendungsbereich. Im Rahmen der vorliegenden Dissertation wurden organische Halbleitermaterialien basierend auf Cyclopenta[2,1-b:3,4-b']dithiophen (CDT) dargestellt und hinsichtlich ihrer strukturellen und elektronischen Eigenschaften untersucht. In Kombination mit Benzo[c][1,2,5]thiadiazol (BTZ) und weiteren Akzeptoren wurden zunächst Donor(D)-Akzeptor(A)-Polymere synthetisiert und Struktur-Eigenschaft-Beziehungen aufgestellt. So konnte ein sehr hochmolekulares Polymer CDT-BTZ-Polymer (Mn = 36 kg mol-1, PDI = 2.6) erhalten werden, welches sich durch eine hohe lamellare Ordnung und eine gemessene Ladungsträgermobilität in FETs von über 5.0 cm2V-1s-1 bei Raumtemperatur auszeichnete; bei niedrigen Temperaturen (240 K) war letztgenannte 6.5 cm2V-1s-1. Aufgrund dieses hohen Ladungstransports und der Abwesenheit niedermolekularer Polymerketten innerhalb des Polymers konnte erstmals eine Messung eines HALL-Effektes bewerkstelligt werden. Dies war der erste Beweis eines Band-artigen Ladungstransportes an einem Polymerhalbleiter. Des Weiteren wurde durch synthetische Veränderung der Grundstruktur des Polymers zu längeren Alkylketten eine anisotrope Anordnung der Polymerketten erreicht und die Ladungsträgermobilität (6.5 cm2V-1s-1 bei Raumtemperatur) weiter gesteigert. Darauf aufbauend wurde der Einfluss von stereoisomeren Seitenketten an CDT-BTZ-Polymeren auf Packungsverhalten, Parametern (Sperrstrom, Einschaltstrom) in FETs und Löslichkeit in organischen Lösungsmitteln untersucht. Durch cis-trans-Isomerisierung der Seitenketten wurde hier eine neue Methode zur Optimierung des Packungsverhaltens von Polymeren in dünnen Filmen und Lösung gefunden. Zuletzt wurden D-π-A-Farbstoffen, welche CDT als Verbrückungseinheit (π) beinhalten, dargestellt. Durch Variation von D und A konnten Struktur-Eigenschaft-Beziehungen in der Anwendung in Solarzellen (Feststoffsolarzellen, Flüssigsolarzellen) gefunden werden. Die Untersuchungen der photoinduzierten Absorption und der Photolumisenzenzquantenausbeute lieferten dabei Erklärungen für physikalische Prozesse wie Ladungsinjektion- und rekombination.

Laser Thomson scattering measurements of electron temperature and density in a Hall-effect plasma

Hall-effect thrusters (HETs) are compact electric propulsion devices with high specific impulse used for a variety of space propulsion applications. HET technology is well developed but the electron properties in the discharge are not completely understood, mainly due to the difficulty involved in performing accurate measurements in the discharge. Measurements of electron temperature and density have been performed using electrostatic probes, but presence of the probes can significantly disrupt thruster operation, and thus alter the electron temperature and density. While fast-probe studies have expanded understanding of HET discharges, a non-invasive method of measuring the electron temperature and density in the plasma is highly desirable. An alternative to electrostatic probes is a non-perturbing laser diagnostic technique that measures Thomson scattering from the plasma. Thomson scattering is the process by which photons are elastically scattered from the free electrons in a plasma. Since the electrons have thermal energy their motion causes a Doppler shift in the scattered photons that is proportional to their velocity. Like electrostatic probes, laser Thomson scattering (LTS) can be used to determine the temperature and density of free electrons in the plasma. Since Thomson scattering measures the electron velocity distribution function directly no assumptions of the plasma conditions are required, allowing accurate measurements in anisotropic and non-Maxwellian plasmas. LTS requires a complicated measurement apparatus, but has the potential to provide accurate, non-perturbing measurements of electron temperature and density in HET discharges. In order to assess the feasibility of LTS diagnostics on HETs non-invasive measurements of electron temperature and density in the near-field plume of a Hall thruster were performed using a custom built laser Thomson scattering diagnostic. Laser measurements were processed using a maximum likelihood estimation method and results were compared to conventional electrostatic double probe measurements performed at the same thruster conditions. Electron temperature was found to range from approximately 1 – 40 eV and density ranged from approximately 1.0 x 1017 m-3 to 1.3 x 1018 m-3 over discharge voltages from 250 to 450 V and mass flow rates of 40 to 80 SCCM using xenon propellant.

Emergent and reentrant fractional quantum Hall effect in trilayer systems in a tilted magnetic field

Magnetotransport measurements in triple-layer electron systems with high carrier density reveal fractional quantum Hall effect at total filling factors nu>2. With an in-plane magnetic field we are able to control the suppression of interlayer tunneling which causes a collapse of the integer quantum Hall plateaus at nu=2 and nu=4, and an emergence of fractional quantum Hall states with increasing tilt angles. The nu=4 state is replaced by three fractional quantum Hall states with denominator 3. The state nu=7/3 demonstrates reentrant behavior and the emergent state at nu=12/5 has a nonmonotonic behavior with increasing in-plane field. We attribute the observed fractional quantum Hall plateaus to correlated states in a trilayer system.

On the Hall effect in polycrystalline semiconductors

Some problems involved in the interpretation of Hall‐effect measurements in polycrystalline semiconductors have not been resolved, especially when the contribution of the boundaries is appreciable. Using the Herring theory of transport properties in inhomogeneous semiconductors, we present an alternative interpretation to that previously proposed. This model permits the calculation of the Hall coefficient under general conditions.

Design of Installation for Transport Measurements

In the present work the aim was to prepare an automatic installation for studies of galvanomagnetic effects in solids and to test it by calibration measurements. As a result required automatic installation was created in this work and test measurements were performed. Created setup automatically provides measurements of the magnetoresistance of the Hall effect with an accuracy of ± 2 µV in the temperature range 2 – 300 K and steady magnetic fields up to 6 T. The test measurements of the glassy carbon samples showed that the setup is reliable, has high sensitivity and is easy to use. The results obtained in the research process are pioneer and will be separately analyzed.

Reentrant quantum Hall effect in bilayer system at high filling factors

We report on the measurements of the quantum Hall effect states in double quantum well structures at the filling factors v = 4N + 1 and 4N + 3, where N is the Landau index number, in the presence of the in-plane magnetic field. The quantum Hall states at these filling factors vanish and reappear several times. Repeated reentrance of the transport gap occurs due to the periodic vanishing of the tunneling amplitude in the presence of the in-plane field. When the gap vanishes, the transport becomes anisotropic. The anisotropy persist at half-odd filling factors, when bilayer quantum Hall states are recovered with increase of the tilt angle. (C) 2007 Elsevier B.V. All rights reserved.

Combined D0 measurements constraining the CP-violating phase and width difference in the B-s(0) system

We combine the D0 measurement of the width difference between the light and heavy B-s(0) mass eigenstates and of the CP-violating mixing phase determined from the time-dependent angular distributions in the B-s(0)-> J/psi phi decays along with the charge asymmetry in semileptonic decays also measured with the D0 detector. With the additional constraint from the world average of the flavor-specific B-s(0) lifetime, we obtain Delta Gamma(s)equivalent to(Gamma(L)-Gamma(H))=0.13 +/- 0.09 ps(-1) and vertical bar phi(s)vertical bar=0.70(-0.47)(+0.39) or Delta Gamma(s)=-0.13 +/- 0.09 ps(-1) and vertical bar phi(s)vertical bar=2.44(-0.39)(+0.47). The data sample corresponds to an integrated luminosity of 1.1 fb(-1) accumulated with the D0 detector at the Fermilab Tevatron Collider.

Measurements of differential cross sections of Z/gamma* plus jets plus X events in p(p)over-bar collisions at root s=1.96 TeV

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Inclusive and differential measurements of the t(t)over-bar charge asymmetry in proton-proton collisions root s=7 TeV

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)