Reentrant quantum Hall effect in bilayer system at high filling factors


Autoria(s): Gusev, Gennady; BAKAROV, A. K.; Lamas, Tomás Erikson; PORTAL, J. C.
Contribuinte(s)

UNIVERSIDADE DE SÃO PAULO

Data(s)

20/10/2012

20/10/2012

2008

Resumo

We report on the measurements of the quantum Hall effect states in double quantum well structures at the filling factors v = 4N + 1 and 4N + 3, where N is the Landau index number, in the presence of the in-plane magnetic field. The quantum Hall states at these filling factors vanish and reappear several times. Repeated reentrance of the transport gap occurs due to the periodic vanishing of the tunneling amplitude in the presence of the in-plane field. When the gap vanishes, the transport becomes anisotropic. The anisotropy persist at half-odd filling factors, when bilayer quantum Hall states are recovered with increase of the tilt angle. (C) 2007 Elsevier B.V. All rights reserved.

Identificador

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.40, n.5, p.1576-1578, 2008

1386-9477

http://producao.usp.br/handle/BDPI/29325

10.1016/j.physe.2007.09.207

http://dx.doi.org/10.1016/j.physe.2007.09.207

Idioma(s)

eng

Publicador

ELSEVIER SCIENCE BV

Relação

Physica E-low-dimensional Systems & Nanostructures

Direitos

restrictedAccess

Copyright ELSEVIER SCIENCE BV

Palavras-Chave #quantum Hall effect #double well #LaTex-2e #many body effects #Nanoscience & Nanotechnology #Physics, Condensed Matter
Tipo

article

proceedings paper

publishedVersion