Reentrant quantum Hall effect in bilayer system at high filling factors
Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
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Data(s) |
20/10/2012
20/10/2012
2008
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Resumo |
We report on the measurements of the quantum Hall effect states in double quantum well structures at the filling factors v = 4N + 1 and 4N + 3, where N is the Landau index number, in the presence of the in-plane magnetic field. The quantum Hall states at these filling factors vanish and reappear several times. Repeated reentrance of the transport gap occurs due to the periodic vanishing of the tunneling amplitude in the presence of the in-plane field. When the gap vanishes, the transport becomes anisotropic. The anisotropy persist at half-odd filling factors, when bilayer quantum Hall states are recovered with increase of the tilt angle. (C) 2007 Elsevier B.V. All rights reserved. |
Identificador |
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.40, n.5, p.1576-1578, 2008 1386-9477 http://producao.usp.br/handle/BDPI/29325 10.1016/j.physe.2007.09.207 |
Idioma(s) |
eng |
Publicador |
ELSEVIER SCIENCE BV |
Relação |
Physica E-low-dimensional Systems & Nanostructures |
Direitos |
restrictedAccess Copyright ELSEVIER SCIENCE BV |
Palavras-Chave | #quantum Hall effect #double well #LaTex-2e #many body effects #Nanoscience & Nanotechnology #Physics, Condensed Matter |
Tipo |
article proceedings paper publishedVersion |