On the Hall effect in polycrystalline semiconductors
| Contribuinte(s) |
Universitat de Barcelona |
|---|---|
| Resumo |
Some problems involved in the interpretation of Hall‐effect measurements in polycrystalline semiconductors have not been resolved, especially when the contribution of the boundaries is appreciable. Using the Herring theory of transport properties in inhomogeneous semiconductors, we present an alternative interpretation to that previously proposed. This model permits the calculation of the Hall coefficient under general conditions. |
| Identificador | |
| Idioma(s) |
eng |
| Publicador |
American Institute of Physics |
| Direitos |
(c) American Institute of Physics , 1985 info:eu-repo/semantics/openAccess |
| Palavras-Chave | #Semiconductors #Efecte Hall #Semiconductors #Hall effect |
| Tipo |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion |
