Unusual surface and edge morphologies, sp2 to sp3 hybridized transformation and electronic damage after Ar+ ion irradiation of few-layer graphene surfaces

Roughness and defects induced on few-layer graphene (FLG) irradiated by Ar+ ions at different energies were investigated using X-ray photoemission spectroscopy (XPS) and atomic force microscopy techniques. The results provide direct experimental evidence of ripple formation, sp2 to sp3 hybridized carbon transformation, electronic damage, Ar+ implantation, unusual defects and edge reconstructions in FLG, which depend on the irradiation energy. In addition, shadowing effects similar to those found in oblique-angle growth of thin films were seen. Reliable quantification of the transition from the sp2-bonding to sp3-hybridized state as a result of Ar+ ion irradiation is achieved from the deconvolution of the XPS C (1s) peak. Although the ion irradiation effect is demonstrated through the shape of the derivative of the Auger transition C KVV spectra, we show that the D parameter values obtained from these spectra which are normally used in the literature fail to account for the sp2 to sp3 hybridization transition. In contrast to what is known, it is revealed that using ion irradiation at large FLG sample tilt angles can lead to edge reconstructions. Furthermore, FLG irradiation by low energy of 0.25 keV can be a plausible way of peeling graphene layers without the need of Joule heating reported previously

Electronic damage in quartz (c-SiO2) by MeV ion irradiations: Potentiality for optical waveguiding applications

The damage induced on quartz (c-SiO2) by heavy ions (F, O, Br) at MeV energies, where electronic stopping is dominant, has been investigated by RBS/C and optical methods. The two techniques indicate the formation of amorphous layers with an isotropic refractive index (n = 1.475) at fluences around 1014 cm−2 that are associated to electronic mechanisms. The kinetics of the process can be described as the superposition of linear (possibly initial Poisson curve) and sigmoidal (Avrami-type) contributions. The coexistence of the two kinetic regimes may be associated to the differential roles of the amorphous track cores and preamorphous halos. By using ions and energies whose maximum stopping power lies inside the crystal (O at 13 MeV, F at 15 MeV and F at 30 MeV) buried amorphous layer are formed and optical waveguides at the sample surface have been generated.

Ionoluminescence induced by swift heavy ions in silica and quartz: a comparative analysis

Ionoluminescence (IL) of the two SiO2 phases, amorphous silica and crystalline quartz, has been comparatively investigated in this work, in order to learn about the structural defects generated by means of ion irradiation and the role of crystalline order on the damage processes. Irradiations have been performed with Cl at 10 MeV and Br at 15 MeV, corresponding to the electronic stopping regime (i.e., where the electronic stopping power Se is dominant) and well above the amorphization threshold. The light-emission kinetics for the two main emission bands, located at 1.9 eV (652 nm) and 2.7 eV (459 nm), has been measured under the same ion irradiation conditions as a function of fluence for both, silica and quartz. The role of electronic stopping power has been also investigated and discussed within current views for electronic damage. Our experiments provide a rich phenomenological background that should help to elucidate the mechanisms responsible for light emission and defect creation.

High current density induced damage mechanisms in electronic solder joints: a state-of-the-art review

High current density induced damages such as electromigration in the on-chip interconnection /metallization of Al or Cu has been the subject of intense study over the last 40 years. Recently, because of the increasing trend of miniaturization of the electronic packaging that encloses the chip, electromigration as well as other high current density induced damages are becoming a growing concern for off-chip interconnection where low melting point solder joints are commonly used. Before long, a huge number of publications have been explored on the electromigration issue of solder joints. However, a wide spectrum of findings might confuse electronic companies/designers. Thus, a review of the high current induced damages in solder joints is timely right this moment. We have selected 6 major phenomena to review in this paper. They are (i) electromigration (mass transfer due electron bombardment), (ii) thermomigration (mass transfer due to thermal gradient), (iii) enhanced intermetallic compound growth, (iv) enhanced current crowding, (v) enhanced under bump metallisation dissolution and (vi) high Joule heating and (vii) solder melting. the damage mechanisms under high current stressing in the tiny solder joint, mentioned in the review article, are significant roadblocks to further miniaturization of electronics. Without through understanding of these failure mechanisms by experiments coupled with mathematical modeling work, further miniaturization in electronics will be jeopardized

Ion-beam damage induced in SiO2: Excitonic mechanisms under heavy electronic excitation

The Centro de Micro-Análisis de Materiales (CMAM) in the Universidad Autónoma de Madrid is carrying out an extensive research program on the processes induced by high energy heavy mass ions (SHI) on dielectric materials and their photonic applications [1?21]. A significant part of this activity constitutes a relevant contribution to the scientific program associated to the TECHNOFUSION project. It is performed in collaboration with the Instituto de Fusion Nuclear at the UPM, the CIEMAT, the Departamento de Física de Materiales at UAM and several other national institutions (INTA) and international laboratories (GANIL, France), Legnaro Italy, Grenoble?. The program has led to a large number of publications in reputed international journals.

Use of electronic fruits to evaluate fruit damage along the handling process.

Two electronic fruits (SEP-1, Simulated Electronic Product, developed in Scotland, and Techmark IS-100, Instrumented Sphere, developed in USA) have been compared in laboratory tests and then used to evaluate handling operations, in several cooperatives of two areas of Spain: Lérida (pome fruits) and Valencia (stone fruits). Advantages of each device were evaluated. Harvest, mechanical bin unloading, and grading line transfers and sizers were identified as operations causing fruit damage.

Structural damage identification with noise polluted Frequency Response Functions (FRFs)

Damage detection in structures has become increasingly important in recent years. While a number of damage detection and localization methods have been proposed, very few attempts have been made to explore the structure damage with noise polluted data which is unavoidable effect in real world. The measurement data are contaminated by noise because of test environment as well as electronic devices and this noise tend to give error results with structural damage identification methods. Therefore it is important to investigate a method which can perform better with noise polluted data. This paper introduces a new damage index using principal component analysis (PCA) for damage detection of building structures being able to accept noise polluted frequency response functions (FRFs) as input. The FRF data are obtained from the function datagen of MATLAB program which is available on the web site of the IASC-ASCE (International Association for Structural Control– American Society of Civil Engineers) Structural Health Monitoring (SHM) Task Group. The proposed method involves a five-stage process: calculation of FRFs, calculation of damage index values using proposed algorithm, development of the artificial neural networks and introducing damage indices as input parameters and damage detection of the structure. This paper briefly describes the methodology and the results obtained in detecting damage in all six cases of the benchmark study with different noise levels. The proposed method is applied to a benchmark problem sponsored by the IASC-ASCE Task Group on Structural Health Monitoring, which was developed in order to facilitate the comparison of various damage identification methods. The illustrated results show that the PCA-based algorithm is effective for structural health monitoring with noise polluted FRFs which is of common occurrence when dealing with industrial structures.

Cutaneous markers of photo-damage and risk of basal cell carcinoma of the skin : a meta-analysis

BACKGROUND: Epidemiologic research has demonstrated that cutaneous markers of photo-damage are associated with risk of basal cell carcinoma (BCC). However there has been no previous attempt to calculate pooled risk estimates. METHODS: We conducted a systematic review and meta-analysis after extracting relevant studies published up to January 2013 from five electronic databases. Eligible studies were those that permitted quantitative assessment of the association between histologically-confirmed BCC and actinic keratoses, solar elastosis, solar lentigines, or telangiectasia. RESULTS: Seven eligible studies were identified and summary odds ratios (OR) were calculated using both random and quality effects models. Having more than ten actinic keratoses was most strongly associated with BCC, conferring up to a 5-fold increase in risk (OR: 4.97; 95% CI: 3.26, 7.58). Other factors, including solar elastosis, solar lentigines, and telangiectasia had weaker but positive associations with BCC with ORs around 1.5. CONCLUSIONS: Markers of chronic photo-damage are positively associated with BCC. The presence of actinic keratoses was the most strongly associated with BCC of the markers examined. IMPACT: This work highlights the relatively modest association between markers of chronic ultraviolet exposure and BCC.

Use of modal flexibility method to detect damage in suspended cables and the effects of cable parameters

Modal flexibility is a widely accepted technique to detect structural damage using vibration characteristics. Its application to detect damage in long span large diameter cables such as those used in suspension bridge main cables has not received much attention. This paper uses the modal flexibility method incorporating two damage indices (DIs) based on lateral and vertical modes to localize damage in such cables. The competency of those DIs in damage detection is tested by the numerically obtained vibration characteristics of a suspended cable in both intact and damaged states. Three single damage cases and one multiple damage case are considered. The impact of random measurement noise in the modal data on the damage localization capability of these two DIs is next examined. Long span large diameter cables are characterized by the two critical cable parameters named bending stiffness and sag-extensibility. The influence of these parameters in the damage localization capability of the two DIs is evaluated by a parametric study with two single damage cases. Results confirm that the damage index based on lateral vibration modes has the ability to successfully detect and locate damage in suspended cables with 5% noise in modal data for a range of cable parameters. This simple approach therefore can be extended for timely damage detection in cables of suspension bridges and thereby enhance their service during their life spans.

Ultrafast electronic excitation in CaF2 crystals

A new pump and probe experimental system was developed, the pump pulse duration of which is stretched and is much longer than that of the probe pulse. Using this system, time-resolved electronic excitation processes and damage mechanisms in CaF2 crystals were studied. The measured reflectivity of the probe pulse begins to increase at the peak of the pump pulse and increases rapidly in the latter half of the pump pulse, when the pump pulse duration is stretched to 580fs. Our experimental results indicate that both multiphoton ionization and impact ionization play important roles in the generation of conduction band electrons, at least they do so when the pump pulse durations are equal to or longer than 580fs.

Mechanisms of femtosecond laser-induced breakdown and damage in MgO

Single-shot laser damage threshold of MgO for 40-986 fs, 800 nm laser pulses is reported. The pump-probe measurements with femtosecond pulses were carried out to investigate the time-resolved electronic excitation processes. A theoretical model including conduction band electrons (CBE) production and laser energy deposition was applied to discuss the roles of multiphoton ionization (MPI) and avalanche ionization in femtosecond laser-induced dielectric breakdown. The results indicate that avalanche ionization plays the dominant role in the femtosecond laser-induced breakdown in MgO near the damage threshold. (c) 2005 Elsevier B.V. All rights reserved.

Ultraviolet-infrared femtosecond laser-induced damage in fused silica and CaF2 crystals

The damage in fused silica and CaF2 crystals induced by wavelength tunable femtosecond lasers is studied. The threshold fluence is observed to increase rapidly with laser wavelength lambda in the region of 250-800 nm, while it is nearly a constant for 800 electronic excitation is also studied by a pump and probe method. The reflectivity increases rapidly in the latter half of pump pulse, which supports that impact ionization plays an important role in the generation of conduction band electrons (CBEs). We study the CBEs absorption via subconduction-band (sub-CB) transition, and develop a coupled avalanche model. Our results indicate that the CBEs absorption via sub-CB transition plays an important role in the damage in dielectrics irradiated by the visible and near ultraviolet femtosecond lasers. Our theory explains well the experiments.

Dynamics of femtosecond laser pulse induced damage in multilayers

We report the single-shot damage thresholds of MgF2/ZnS onmidirectional reflector for laser pulse durations from 50 A to 900 fs. A coupled dynamic model is applied to study the damage mechanisms, in which we consider not only the electronic excitation of the material, but also the influence of this excitation-induced changes in the complex refractive index of material on the laser pulse itself. The results indicate that this feedback effect plays a very important role during the damage of material. Based on this model, we calculate the threshold fluences and the time-resolved excitation process of the multiplayer. The theoretical calculations agree well with our experimental results. (c) 2005 Elsevier B.V. All rights reserved.

Mechanisms of femtosecond laser-induced damage in magnesium fluoride

We studied the single-shot damage in magnesium fluoride irradiated by 800 nm femtosecond (fs) laser. The dependence of damage thresholds on the laser pulse durations from 60 to 750 fs was measured. The pump-probe measurements were carried out to investigate the time-resolved electronic excitation processes. A coupled dynamic model was applied to study the microprocesses in the interaction between fs laser and magnesium fluoride. The results indicate that both multiphoton ionization and avalanche ionization play important roles in the femtosecond laser-induced damage in MgF2. (C) 2006 Elsevier Ltd. All rights reserved.

Effects of annealing on laser-induced damage threshold of TiO2/SiO2 high reflectors

The mechanism of improving 1064 nm, 12 ns laser-induced damage threshold (LIDT) of TiO2/SiO2 high reflectors (HR) prepared by electronic beam evaporation from 5.1 to 13.1 J/cm(2) by thermal annealing is discussed. Through optical properties, structure and chemical composition analysis, it is found that the reduced atomic non-stoichiometric defects are the main reason of absorption decrease and LIDT rise after annealing. A remarkable increase of LIDT is found at 300 degrees C annealing. The refractive index and film inhomogeneity rise, physical thickness decrease, and film stress changes from compress stress to tensile stress due to the structure change during annealing. (c) 2007 Elsevier B.V. All rights reserved.