Electron-Phonon Interaction Within the Framework of the Fluctuating Valence of Copper Atoms — a Theoretical Model for High Temperature Superconductivity

Electron-phonon interaction is considered within the framework of the fluctuating valence of Cu atoms. Anderson's lattice Hamiltonian is suitably modified to take this into account. Using Green's function technique tbe possible quasiparticle excitations' are determined. The quantity 2delta k(O)/ kB Tc is calculated for Tc= 40 K. The calculated values are in good agreement with the experimental results.

Wigner Transport models of the electron-phonon kinetics in quantum wires

Two quantum-kinetic models of ultrafast electron transport in quantum wires are derived from the generalized electron-phonon Wigner equation. The various assumptions and approximations allowing one to find closed equations for the reduced electron Wigner function are discussed with an emphasis on their physical relevance. The models correspond to the Levinson and Barker-Ferry equations, now generalized to account for a space-dependent evolution. They are applied to study the quantum effects in the dynamics of an initial packet of highly nonequilibrium carriers, locally generated in the wire. The properties of the two model equations are compared and analyzed.

Effects of confinement on the electron-phonon interaction in Al(0.18)Ga(0.82)As/GaAs quantum wells

Photoluminescence measurements at different temperatures have been performed to investigate the effects of confinement on the electron-phonon interaction in GaAs/AlGaAs quantum wells (QWs). A series of samples with different well widths in the range from 150 up to 750 A was analyzed. Using a fitting procedure based on the Passler-p model to describe the temperature dependence of the exciton recombination energy, we determined a fit parameter which is related to the strength of the electron-phonon interaction. On the basis of the behavior of this fit parameter as a function of the well width thickness of the samples investigated, we verified that effects of confinement on the exciton recombination energy are still present in QWs with well widths as large as 450 angstrom. Our findings also show that the electron-phonon interaction is three times stronger in GaAs bulk material than in Al(0.18)Ga(0.82)As/GaAs QWs.

Effect of electron-phonon coupling on transmission through Luttinger liquid hybridized with resonant level

We show that electron-phonon coupling strongly affects transport properties of the Luttinger liquid hybridized with a resonant level. Namely, this coupling significantly modifies the effective energy-dependent width of the resonant level in two different geometries, corresponding to the resonant or antiresonant transmission in the Fermi gas. This leads to a rich phase diagram for a metal-insulator transition induced by the hybridization with the resonant level.

Impurity scattering in a Luttinger liquid with electron-phonon coupling

We study the influence of electron-phonon coupling on electron transport through a Luttinger liquid with an embedded weak scatterer or weak link. We derive the renormalization group (RG) equations, which indicate that the directions of RG flows can change upon varying either the relative strength of the electron-electron and electron-phonon coupling or the ratio of Fermi to sound velocities. This results in a rich phase diagram with up to three fixed points: an unstable one with a finite value of conductance and two stable ones, corresponding to an ideal metal or insulator.

Impurity scattering in Luttinger liquid with electron-phonon coupling

We study the influence of electron-phonon coupling on electron transport through a Luttinger liquid with an embedded weak scatterer or weak link. We derive the renormalization group (RG) equations which indicate that the directions of RG flows can change upon varying either the relative strength of the electron-electron and electron-phonon coupling or the ratio of Fermi to sound velocities. This results in the rich phase diagram with up to three fixed points: an unstable one with a finite value of conductance and two stable ones, corresponding to an ideal metal or insulator.

First principles calculation of electron-phonon and alloy scattering in strained SiGe

First-principles electronic structure methods are used to predict the mobility of n-type carrier scattering in strained SiGe. We consider the effects of strain on the electron-phonon deformation potentials and the alloy scattering parameters. We calculate the electron-phonon matrix elements and fit them up to second order in strain. We find, as expected, that the main effect of strain on mobility comes from the breaking of the degeneracy of the six Δ and L valleys, and the choice of transport direction. The non-linear effects on the electron-phonon coupling of the Δ valley due to shear strain are found to reduce the mobility of Si-like SiGe by 50% per % strain. We find increases in mobility between 2 and 11 times that of unstrained SiGe for certain fixed Ge compositions, which should enhance the thermoelectric figure of merit in the same order, and could be important for piezoresistive applications.

Méthode de calcul à N-corps basée sur la G0W0 : étude du couplage électron-phonon dans le C60 et développement d’une approche accélérée pour matériaux organiques

La présente thèse porte sur les limites de la théorie de la fonctionnelle de la densité et les moyens de surmonter celles-ci. Ces limites sont explorées dans le contexte d'une implémentation traditionnelle utilisant une base d'ondes planes. Dans un premier temps, les limites dans la taille des systèmes pouvant être simulés sont observées. Des méthodes de pointe pour surmonter ces dernières sont ensuite utilisées pour simuler des systèmes de taille nanométrique. En particulier, le greffage de molécules de bromophényle sur les nanotubes de carbone est étudié avec ces méthodes, étant donné l'impact substantiel que pourrait avoir une meilleure compréhension de ce procédé sur l'industrie de l'électronique. Dans un deuxième temps, les limites de précision de la théorie de la fonctionnelle de la densité sont explorées. Tout d'abord, une étude quantitative de l'incertitude de cette méthode pour le couplage électron-phonon est effectuée et révèle que celle-ci est substantiellement plus élevée que celle présumée dans la littérature. L'incertitude sur le couplage électron-phonon est ensuite explorée dans le cadre de la méthode G0W0 et cette dernière se révèle être une alternative substantiellement plus précise. Cette méthode présentant toutefois de sévères limitations dans la taille des systèmes traitables, différents moyens théoriques pour surmonter ces dernières sont développés et présentés dans cette thèse. La performance et la précision accrues de l'implémentation résultante laissent présager de nouvelles possibilités dans l'étude et la conception de certaines catégories de matériaux, dont les supraconducteurs, les polymères utiles en photovoltaïque organique, les semi-conducteurs, etc.

Intersubband plasmon-phonon modes in quantum wires at high temperatures

Coupled intersubband plasmon-phonon modes are studied in a multisubband parabolic quantum wire at room temperatures. These modes are found by calculating the spectral weight function which is related to the inelastic Raman spectra. We use a 13 subband model. The plasmon-phonon coupling strongly modifies the dispersion relation of the intersubband modes in the vicinity of the optical phonon frequency omega(LO). Extra modes show up as a result of the electron-phonon interaction. We carefully study the density and temperature dependence of these extra modes. We also show that coupled intersubband plasmon-phonon modes should be observed for temperatures as high as 300 K.

Two-phase separation observed in thermally treated pellets of ClO4- doped poly(3-methylthiophene) from electron spin resonance measurements

A pressed pellet of CIO (-)(4) poly (3-methylthiophene) (P3MT) was heated for two hours at 85 degrees C and suddenly dropped in liquid nitrogen. A change was observed around 220 K in the Electron Spin Resonance (ESR) spectra when the sample was slowly cooled from room temperature. ESR line asymmetry parameter (A/B) showed two spatially separated phases. One was identified as a small metallic-like phase. The other phase, the larger one, makes a transition to a semiconducting Charge-Density Wave (CDW) state.

Localized heating or cooling in mesoscopic devices by electron transport

We describe a method to produce local heating or cooling (depending on how the system is tuned) in a mesoscopic device by transport of electrons. The mechanism can operate on molecules or quantum dots, or any system where the local modes are coupled to vibrations. We believe this will be of future interest in micro electro mechanical systems (MEMS). The amount of heating/cooling obtained depends on the details of the device. We also perform a numerical calculation to display the effect. (C) 2004 Elsevier B.V. All rights reserved.

Antilocalization of hole carriers in Pb(1-x)Eu(x)Te alloys in the metallic regime

Magnetoresistance measurements in p-type Pb(1-x)Eu(x)Te alloys, for x varying from 0% up to 5%, have been used to investigate localization and antilocalization effects. These are attributed to both the spin-orbit scattering and to the large Zeeman splitting present in these alloys due to the large values of the effective Lande g factor. The magnetoresistance curves are analyzed using the model of Fukuyama and Hoshino, which takes into account the spin-orbit and Zeeman scattering mechanisms. The spin-orbit scattering time is found to be independent of the temperature, while the inelastic-scattering time increases with decreasing temperature suggesting the electron-phonon interaction as the main scattering mechanism.

Interaction of a discrete breather with a lattice junction

We study the scattering of a moving discrete breather (DB) on a junction in a Fermi-Pasta-Ulam chain consisting of two segments with different masses of the particles. We consider four distinct cases: (i) a light-heavy (abrupt) junction in which the DB impinges on the junction from the segment with lighter mass, (ii) a heavy-light junction, (iii) an up mass ramp in which the mass in the heavier segment increases continuously as one moves away from the junction point, and (iv) a down mass ramp. Depending on the mass difference and DB characteristics (frequency and velocity), the DB can either reflect from, or transmit through, or get trapped at the junction or on the ramp. For the heavy-light junction, the DB can even split at the junction into a reflected and a transmitted DB. The latter is found to subsequently split into two or more DBs. For the down mass ramp the DB gets accelerated in several stages, with accompanying radiation (phonons). These results are rationalized by calculating the Peierls-Nabarro barrier for the various cases. We also point out implications of our results in realistic situations such as electron-phonon coupled chains.

Influência da espessura nas propriedades de absorção e emissão e na morfologia de filmes automontados de poli(p-fenileno vinileno)

In this report, we studied the thickness effect on the optical and morphological properties of self-assembled (SA) poly(p-phenylenevinylene) (PPV) films, wich were processed with 5 and 75 layers from a PPV precursor polymer and dodecylbenzenesulfonate, and then, thermally converted at 230 °C. The increase of the film thickness yielded more intense peaks in the vibrational spectral range. The electron-phonon coupling was quantified by the Huang - Rhys factor, that shows the effects on the polymer chain mobility in the interface substrate/polymer. A strong emission anisotropy r=0.57 was observed for the film with 5 layers of thickness decreasing to 0.34 for the film with 75 layers. Finally, the surface topology of the films was measured using Atomic Force Microscopy.

Pressure dependence of spin fluctuations in metallic glasses Zrâ â Niâ â ,Zrâ â (Nix/Feâ â â -x)â â and /Zrx/feâ â â -x

The superconducting transition temperature Tc of metallic glasses ZrxFelOO-x (x=80, 75), Zr75(NixFelOO-x)25 (x=75, 50, 25), and CU2SZr75 were measured under quasi-hydrostatic pressure up to 8 OPa (80kbar). The volume (pressure) dependence of the electron-phonon coupling parameters Aep for CU25Zr75 was calculated using the McMillan equatio11. Using this volume dependence of Aep and the modified McMillan equation which incorporates spin-fluctuations, the volume dependence of the spin fluctuation parameter, Asf, was determined in Zr75Ni25, ZrxFelOO-x , a11d Zr75(NixFelOO-x)25. It was found that with increasing pressure, spinfluctuations are suppressed at a faster rate in ZrxFe lOO-x and Zr75(NixFelOO-x)25, as Fe concentration is increased. The rate of suppression of spin-fluctuations with pressure was also found to be higher in Fe-Zr glasses than in Ni-Zr glasses of similar composition.