Antilocalization of hole carriers in Pb(1-x)Eu(x)Te alloys in the metallic regime


Autoria(s): Peres, Marcelos Lima; Chitta, Valmir Antonio; Oliveira Junior, Nei Fernandes de; MAUDE, D. K.; RAPPL, P. H. O.; UETA, A. Y.; ABRAMOF, E.
Contribuinte(s)

UNIVERSIDADE DE SÃO PAULO

Data(s)

18/04/2012

18/04/2012

2009

Resumo

Magnetoresistance measurements in p-type Pb(1-x)Eu(x)Te alloys, for x varying from 0% up to 5%, have been used to investigate localization and antilocalization effects. These are attributed to both the spin-orbit scattering and to the large Zeeman splitting present in these alloys due to the large values of the effective Lande g factor. The magnetoresistance curves are analyzed using the model of Fukuyama and Hoshino, which takes into account the spin-orbit and Zeeman scattering mechanisms. The spin-orbit scattering time is found to be independent of the temperature, while the inelastic-scattering time increases with decreasing temperature suggesting the electron-phonon interaction as the main scattering mechanism.

CNPq

Centre National de la Recherche Scientifique - CNRS/FAPESP

CAPES/COFECUB

Identificador

PHYSICAL REVIEW B, v.79, n.8, 2009

1098-0121

http://producao.usp.br/handle/BDPI/16248

10.1103/PhysRevB.79.085309

http://dx.doi.org/10.1103/PhysRevB.79.085309

Idioma(s)

eng

Publicador

AMER PHYSICAL SOC

Relação

Physical Review B

Direitos

restrictedAccess

Copyright AMER PHYSICAL SOC

Palavras-Chave #electron-phonon interactions #europium compounds #g-factor #hole mobility #IV-VI semiconductors #lead compounds #localised states #magnetoresistance #narrow band gap semiconductors #spin-orbit interactions #Zeeman effect #THIN-FILMS #CONDUCTION ELECTRONS #WEAK LOCALIZATION #STRAINED PBTE #SPIN-ORBIT #MAGNETORESISTANCE #MAGNETOTRANSPORT #SCATTERING #ALUMINUM #SYSTEMS #Physics, Condensed Matter
Tipo

article

original article

publishedVersion