Mechanism of electrical conduction in plasma polymerized furfural thin films

Polyfurfural thin films lying in the thickness range of 1300–2000 A˚ were prepared by ac plasma polymerization technique. The current–voltage characteristics in symmetric and asymmetric electrode configuration were studied with a view to determining the dominant conduction mechanism.It was found that the Schottky conduction mechanism is dominant in plasma polymerized furfural thin films.The predominance of Schottky mechanism was further confirmed based on the thermally stimulated current measurements.

Influence of degradation on the electrical conduction process in ZnO and SnO2-based varistors

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Electrical conduction mechanism and phase transition studies using dielectric properties and Raman spectroscopy in ferroelectric Pb0.76Ca0.24TiO3 thin films

We have studied the phase transition behavior of Pb0.76Ca0.24TiO3 thin films using Raman scattering and dielectric measurement techniques. We also have studied the leakage current conduction mechanism as a function of temperature for these thin films on platinized silicon substrates. A Pb0.76Ca0.24TiO3 thin film was prepared using a soft chemical process, called the polymeric precursor method. The results showed that the dependence of the dielectric constant upon the frequency does not reveal any relaxor behavior. However, a diffuse character-type phase transition was observed upon transformation from a cubic paraelectric phase to a tetragonal ferroelectric phase. The temperature dependency of Raman scattering spectra was investigated through the ferroelectric phase transition. The soft mode showed a marked dependence on temperature and its disappearance at about 598 K. on the other hand, Raman modes persist above the tetragonal to cubic phase transition temperature, although all optical modes should be Raman inactive above the phase transition temperature. The origin of these modes must be interpreted in terms of a local breakdown of cubic symmetry by some kind of disorder. The lack of a well-defined transition temperature suggested a diffuse-type phase transition. This result corroborate the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in the thin film. The leakage current density of the PCT24 thin film was studied at elevated temperatures, and the data were well fitted by the Schottky emission model. The Schottky barrier height of the PCT24 thin film was estimated to be 1.49 eV. (C) 2003 American Institute of Physics.

Synthesis, characterization, and electrical conduction of 10 mol% Dy2O3 doped CeO2 ceramics

Well-densified 10 mol% Dy2O3-doped CeO2 (20DDC) ceramics with average grain sizes of similar to 0.12-1.5 mu m were fabricated by pressureless sintering at 950-1550 degrees C using a reactive powder thermally decomposed from a carbonate precursor, which was synthesized via a carbonate coprecipitation method employing nitrates as the starting salts and ammonium carbonate as the precipitant. Electrical conductivity of the ceramics, measured by the dc three-point impedance method, shows a V-shape curve against the average grain size. The sample with the smallest grain size of 0.12 mu m exhibits a high conductivity of similar to 10(-1.74) S/cm at the measurement temperature of 700 degrees C, which is about the same conduction level of the micro-grained 10 mol% Sm2O3- or Gd2O3-doped CeO2, two leading electrolyte materials. (c) 2004 Elsevier Ltd. All rights reserved.

Conduction mechanisms and charge storage in Si-nanocrystals metal-oxide-semiconductor memory devices studied with conducting atomic force microscopy

In this work, we demonstrate that conductive atomic force microscopy (C-AFM) is a very powerful tool to investigate, at the nanoscale, metal-oxide-semiconductor structures with silicon nanocrystals (Si-nc) embedded in the gate oxide as memory devices. The high lateral resolution of this technique allows us to study extremely small areas ( ~ 300nm2) and, therefore, the electrical properties of a reduced number of Si-nc. C-AFM experiments have demonstrated that Si-nc enhance the gate oxide electrical conduction due to trap-assisted tunneling. On the other hand, Si-nc can act as trapping centers. The amount of charge stored in Si-nc has been estimated through the change induced in the barrier height measured from the I-V characteristics. The results show that only ~ 20% of the Si-nc are charged, demonstrating that the electrical behavior at the nanoscale is consistent with the macroscopic characterization.

Structural and electrical properties of Fe-doped TiO2 thin films

The present study discusses the effect of iron doping in TiO2 thin films deposited by rf sputtering. Iron doping induces a structural transformation from anatase to rutile and electrical measurements indicate that iron acts as an acceptor impurity. Thermoelectric power measurement shows a transition between n-type and p-type electrical conduction for an iron concentration around 0.13 at.%. The highest p-type conductivity at room temperature achieved by iron doping was 10(-6) S m(-1).

Studies on Electrical and Thermal Properties of Certain Selected Photonic Materials

The present thesis is centered around the study of electrical and thermal properties of certain selected photonic materials.We have studied the electrical conduction mechanism in various phases of certain selected photonic materials and those associated with different phase transitions occurring in them. A phase transition leaves its own impressions on the key parameters like electrical conductivity and dielectric constant. However, the activation energy calculation reveals the dominant factor responsible for conduction process.PA measurements of thermal diffusivity in certain other important photonic materials are included in the remaining part of the research work presented in this thesis. PA technique is a promising tool for studying thermal diffusivities of solid samples in any form. Because of its crucial role and common occurrence in heat flow problems, the thermal diffusivity determination is often necessary and knowledge of thermal diffusivity can intum be used to calculate the thermal conductivity. Especially,knowledge of the thermal diffusivity of semiconductors is important due to its relation to the power dissipation problem in microelectronic and optoelectronic devices which limits their performances. More than that, the thermal properties, especially those of thin films are of growing interest in microelectronics and microsystems because of the heat removal problem involved in highly integrated devices. The prescribed chapter of the present theis demonstrates how direct measurement of thermal diffusivity can be carried out in thin films of interest in a simple and elegant manner using PA techniques. Although results of only representative measurements viz; thermal diffusivity values in Indium, Aluminium, Silver and CdS thin films are given here, evaluation of this quantity for any photonic and / electronic material can be carried out using this technique in a very simple and straight forward manner.

Electrical conductivity, dielectric constant and phase transitions in pure and doped diammonium hydrogen phosphate

DC and AC electrical conductivity measurements in single crystals of diammonium hydrogen phosphate along the c axis show anomalous variations at 174, 246 and 416 K. The low-frequency dielectric constant also exhibits peaks exactly at these temperatures with a thermal hysteresis of 13 degrees C for the peak at 416 K. These specific features of the electrical properties are in agreement with earlier NMR second-moment data and can be identified with three distinct phase transitions that occur in the crystal. The electrical conductivity values have been found to increase linearly with impurity concentration in specimens doped with a specific amount of SO42- ions. The mechanisms of the phase transition and of the electrical conduction process are discussed in detail.

Electrical conductivity and thermally stimulated current in the paraelectric phase of (NH4)2SO4

Anomalous variations of d.c. electrical conductivity with temperature are observed in ammonium sulphate single crystals, suggesting a possible phase transition at 150°C. Measurements of thermally stimulated current also support these results. The mechanism of electrical conduction is explained on the basis of studies made on doped and quenched crystals.

Electrical conductivity, dielectric properties and phase transition in ethylenediammonium sulphate single crystals

D.C. and a.c. electrical conductivities, dielectric constant and dielectric loss factor in single crystals of ethylenediammonium sulphate, (H3NCH2CH2NH3)(SO4), have been measured axiswise as a function of temperature. Anomalous variations in all the above properties at 480 K indicate the occurrence of a phase transition in the above material at this temperature. The existence of such a phase transition is also confirmed by DSC measurements. Electrical conductivity results are analysed and the activation energies of conduction at different temperature regions have been evaluated from the logσ vs 103T−1 plot. Possible mechanisms for the electrical conduction process are discussed, the available results being in favour of a proton transport model.

A Study Of The Effect Of Electrode And Overlayer Films On The Electrical Properties Of Certain Metal Films

This thesis consists of a study of the effect of electrode films and overlayer films on the electrical properties of certain metal films. The films have been prepared on glass substrates by thermal evapouration in a vaccum 10 terr. The properties of Al films on Ag, Al,Au and Cu films on In electrodes ,and Bi/Ag bilayer films have been studied. The influence of annealing electrodes at higher temperature on the electrical properties of metal films has also been investigated. Further the effect of varying layer thickness in the bilayer films ,both annealed at higher temperature and annealed at room temperature have been examined.

Electrical properties and phase transitions insome ammonium containing ferroelectrics

The thesis aims to present the results of the experimental investigations on the electrical properties like electrical conductivity, dielectric constant and ionic thermo~ currents in certain ammonium containing ferroelectric crystals viz. LiNH4SO4, (NH4)2SO4 and (NH4)5H(SO4)2. Special attention has been paid in revealing the mechanisms of electrical conduction in the various phases of these crystals and those asso~ ciated with the different phase transitions occurring in them, by making studies on doped, quenched and deuterated crystals. The report on the observation of two new phase transitions in (NH4) S O2 and of a similar one in ( NH4 ) H (2SO4 ) are included. The relaxation mechanisms of the impurity-vacancy complexes and the space charge phenomena in pure and doped crystals of LiNH4SO4 and (NH4)2SO4 and the observation of a new type of ionic thermo-current viz. Protonic Thermo-Current (PTC) in these crystals are also presented here.

Electrical And Photoacoustic Studies On Phase Transitions In Certain Ammonium Containing Crystals

In the present thesis a series of exhaustive investigations have been carried out on a number of crystalline samples with special reference tx> the jphase transitions exhibited by them. These include single crystals of pure, doped or deuterated specimens of certain ammonium containing crystals viz., (NH )34H(SO4)2, (NH4)2HPO4, (NH4)2Cr2O7 znui NH4H2PO4. ac/dc electrical conductivity, dielectric constant, ionic thermocurrent as wwifil as photoacoustic measurements have been carried out on most of them over a wide range of temperature. In addition investigations have been carried out in pure and doped single crystals of NaClO3 and NaNO3 using ionic thermocurrent measurements and these are presented here. Special attention has been paid to reveal the mechanism of electrical conduction in various phases of "these crystals and to evaluate the different parameters involved in the conduction as well as phase transition process. The thesis contains ten chapters ‘

Electrical Properties of Textured Niobium-Doped Bismuth Titanate Ceramics

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