Influence of degradation on the electrical conduction process in ZnO and SnO2-based varistors


Autoria(s): Ponce, M. A.; Ramirez, M. A.; Parra, R.; Malagu, C.; Castro, M. S.; Bueno, Paulo Roberto; Varela, José Arana
Contribuinte(s)

Universidade Estadual Paulista (UNESP)

Data(s)

20/05/2014

20/05/2014

01/10/2010

Resumo

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

The conduction process during degradation, promoted by the application of fixed dc bias voltage at different temperatures (thermal steady states) and current pulses 8/20 mu s on ZnO and SnO2-based varistors, was studied comparatively in the present work. The electrical properties of the varistor systems were highly damaged after degradation with current pulse 8/20 mu s. Variations on the potential barrier height and donor concentration were calculated by fitting the experimental data from impedance spectroscopy measurements assuming the formation of Schottky barriers at the grain boundaries and electrical conduction to occur due to tunneling and thermionic emission. (C) 2010 American Institute of Physics. [doi:10.1063/1.3490208]

Formato

6

Identificador

http://dx.doi.org/10.1063/1.3490208

Journal of Applied Physics. Melville: Amer Inst Physics, v. 108, n. 7, p. 6, 2010.

0021-8979

http://hdl.handle.net/11449/9434

10.1063/1.3490208

WOS:000283222200139

WOS000283222200139.pdf

Idioma(s)

eng

Publicador

American Institute of Physics (AIP)

Relação

Journal of Applied Physics

Direitos

closedAccess

Tipo

info:eu-repo/semantics/article