Multi-wavelength source using low drive-voltage amplitude modulators for optical communications

A simple and cost-effective technique for generating a flat, square-shaped multi-wavelength optical comb with 42.6 GHz line spacing and over 0.5 THz of total bandwidth is presented. A detailed theoretical analysis is presented, showing that using two concatenated modulators driven with voltages of 3.5 Vp are necessary to generate 11 comb lines with a flatness below 2dB. This performance is experimentally demonstrated using two cascaded Versawave 40 Gbit/s low drive voltage electro-optic polarisation modulators, where an 11 channel optical comb with a flatness of 1.9 dB and a side-mode-suppression ratio (SMSR) of 12.6 dB was obtained.

Multi-wavelength source using low drive-voltage amplitude modulators for optical communications

A simple and cost-effective technique for generating a flat, square-shaped multi-wavelength optical comb with 42.6 GHz line spacing and over 0.5 THz of total bandwidth is presented. A detailed theoretical analysis is presented, showing that using two concatenated modulators driven with voltages of 3.5 Vp are necessary to generate 11 comb lines with a flatness below 2dB. This performance is experimentally demonstrated using two cascaded Versawave 40 Gbit/s low drive voltage electro-optic polarisation modulators, where an 11 channel optical comb with a flatness of 1.9 dB and a side-mode-suppression ratio (SMSR) of 12.6 dB was obtained.

Taajuusmuuttajan häviöidensimulointityökalun kehitys

Diplomityössä on kehitetty kaksitasoisen jännitevälipiirillisen taajuusmuuttajan häviöiden simulointiin käytettävä simulointimalli osaksi säädettävän sähkömoottorikäytön simulointityökalua, jolla voidaan analysoida eri säätöalgoritmien, kuormituksen ja kytkentätaajuuden vaikutusta taajuusmuuttajan häviöihin. Aluksi on selvitetty yksityiskohtaisesti taajuusmuuttajan häviölähteet ja häviöiden fysikaalinen tausta. Taajuusmuuttajassa käytettäville komponenteille on esitetty simulointimalleja. Taajuusmuuttajan malli ja häviöiden laskenta-algoritmit on toteutettu C-kielellä. Taajuusmuuttajan malli vastaa perusrakenteeltaan ACS800-02-0260-5 - taajuusmuuttajaa. ACS800-02-0260-5 -taajuusmuuttajan häviöitä on simuloitu erilaisissa kuormitustilanteissa, ja simulointien tueksi taajuusmuuttajan häviöt on pyritty selvittämään laboratoriomittauksin.

Tuulivoimakäyttö sähköverkon vikatilanteissa

Tämä työ on tehty Lappeenrannan teknillisessä yliopistossa, meneillään olevan tuulivoimalasimulaattorin kehitystyön yhteydessä. Työssä käydään läpi simulaattorissa käytettyjen generaattorisillan ja verkkosillan säätöperiaatteita, tehdään katsaus siirtoverkon jännitevikoihin sekä tuulivoimalan toimintaan näissä vikatilanteissa. Työn varsinainen tutkimuskohde on verkkosillan säädön toiminnan simuloiminen siirtoverkon jännitevioissa ja säädön parannusehdotukset.

Leakage current behavior of Bi3.25La0.75Ti3O12 ferroelectric thin films deposited on different bottom electrodes

Bi3.25La0.75Ti3O12 (BLT) thin films were grown on LaNiO3 (LNO), RuO2 (RuO2) and La0.5Sr0.5CoO3 (LSCO) bottom electrodes by using the polymeric precursor method and microwave furnace. The bottom electrode is found to be an important parameter which affects the crystallization, morphology and leakage current behaviors. The XRD results clearly show that film deposited on LSCO electrode favours the growth of (117) oriented grains whereas in films deposited on LNO and RuO2 the growth of (001) oriented grains dominated. The film deposited on LSCO has a plate-like grain structure, and its leakage current behavior is in agreement with the prediction of the space-charge-limited conduction model. on the other hand, the films deposited on RuO2 and LNO electrodes present a rounded grain shape with some porosity, and its high field conduction is well explained by the Schottky and Poole-Frenkel emission models. The remanent polarization (P-r) and the drive voltage (V-c) were in the range of 11-23 mu C cm(-2) and 0.86-1.56 V, respectively, and are better than the values found in the literature. (c) 2007 Published by Elsevier B.V.

Enhanced ferroelectric properties of La-substituted BiFeO3 thin films on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates prepared by the soft chemical method

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Size effects of polycrystalline lanthanum modified Bi4Ti3O12 thin films

The film thickness dependence on the ferroelectric properties of lanthanum modified bismuth titanate Bi3.25La0.75Ti3O12 was investigated. Films with thicknesses ranging from 230 to 404 nut were grown on platinum-coated silicon substrates by the polymeric precursor method. The internal strain is strongly influenced by the film thickness. The morphology of the film changes as the number of layers increases indicating a thickness dependent grain size. The leakage current, remanent polarization and drive voltage were also affected by the film thickness. (c) 2007 Elsevier Ltd. All rights reserved.

The influence of crystallization route on the properties of lanthanum-doped Bi4Ti3O12 thin films prepared from polymeric precursors

Pure and lanthanum-doped Bi4Ti3O12 thin films were deposited on Pt/Ti/SiO2/Si substrate using a polymeric precursor solution. The spin-coated films were specular and crack-free and crystalline after annealing at 700 degreesC for 2 h. Crystallinity and morphological evaluation were examined by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Multilayered films obtained using the intermediate-crystalline layer route present a dense microstructure with spherical grains. Films obtained using the intermediate-amorphous layer, present elongated grains around 250 nm in size. The dielectric and ferroelectric properties of the lanthanum-doped Bi4Ti3O12 films are strongly affected by the crystallization route. The hysteresis loops are fully saturated with a remnant polarization and drive voltage of the films, heat-treated by the intermediate-crystalline (P-r = 20.2 muC/cm(2) and V = 1.35 V) and for the film heat-treated by amorphous route (P-r = 22.4 muC/cm(2) and V = 2.99 V). (C) 2004 Elsevier B.V. All rights reserved.

High Curie point CaBi2Nb2O9 thin films: A potential candidate for lead-free thin-film piezoelectrics

CaBi2Nb2O9 (CBNO) thin films deposited on platinum coated silicon substrates by the polymeric precursor method exhibited good structural, dielectric, and piezoelectric characteristics. Capacitance-voltage measurements indicated good ferroelectric polarization switching characteristics. Remanent polarization and drive voltage values were 4.2 mu C/cm(2) and 1.7 V for a maximum applied voltage of 10 V. The film has a piezoelectric coefficient d(33) equal to 60 pm/V, current density of 0.7 mu A/cm(2), and Curie temperature of 940 degrees C. The polar-axis-oriented CBNO is a promising candidate for use in lead-free high Curie point in ferroelectric and piezoelectric devices. (c) 2006 American Institute of Physics.

Fatigue-free behavior of Bi3.25La0.75Ti3O12 thin films grown on several bottom eletrodes by the polymeric precursor method

Fatigue-free Bi3.25La0.75Ti3O12 (BLT) thin films were grown on LaNiO3,RuO2, and La0.5Sr0.5CoO3 bottom electrodes in a microwave furnace at 700 degreesC for 10 min. The remanent polarization (P-r) and the drive voltage (V-c) were in the range of 11-23 muC/cm(2) and 0.86-1.56 V, respectively, and are better than the values found in the literature. The BLT capacitors did not show any significant fatigue up to 10(10) read/write switching cycles. (C) 2004 American Institute of Physics.

Microwave synthesis of calcium bismuth niobate thin films obtained by the polymeric precursor method

The crystal structure, surface morphology and electrical properties of layered perovskite calcium bismuth niobate thin films (CaBi2Nb2O9-CBN) deposited on platinum coated silicon substrates by the polymeric precursor method have been investigated. The films were crystallized in a domestic microwave and in a conventional furnace. X-ray diffraction and atomic force microscopy analysis confirms that the crystallinity and morphology of the films are affected by the different annealing routes. Ferroelectric properties of the films were determined with remanent polarization P-r and a drive voltage V-c of 4.2 mu C/cm(2) and 1.7 V for the film annealed in the conventional furnace and 1.0 mu C/cm(2) and 4.0 V for the film annealed in microwave furnace, respectively. A slight decay after 10(8) polarization cycles was observed for the films annealed in the microwave furnace indicating a reduction of the domain wall mobility after interaction of the microwave energy with the bottom electrode. (C) 2006 Elsevier Ltd. All rights reserved.

Synthesis and electrical characterization of CaBi2Nb2O9 thin films deposited on Pt/Ti/SiO2/Si substrates by polymeric precursor method

We report the successful deposition of CaBi2Nb2O9 (CBN) thin films on platinum coated silicon substrates by polymeric precursor method. The CBN thin films exhibited good structural, dielectric and CBN/Pt interface characteristics. The leakage current of the capacitor structure was around 0.15 A cm(-2) at an applied electric field of 30 kV cm(-1). The capacitance-voltage measurements indicated good ferroelectric polarization switching characteristics. The typical measured small signal dielectric constant and the dissipation factor at a frequency of 100 kHz were 90 and 0.053, respectively. The remanent polarization and the drive voltage values were 4.2 C cm(-2) and 1.7 V at an applied voltage of 10 V. No significant fatigue was observed at least up to 10(8) switching cycles. (c) 2005 Elsevier B.V. All rights reserved.

Fatigue and retention properties of Bi3.25La0.75Ti3O12 films using LaNiO3 bottom electrodes

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Coupling rate measurement of a novel multi-actuated piezoelectric device using optical interferometry

The class of piezoelectric actuators considered in this paper consists of a multi-flexible structure actuated by two or more piezoceramic devices that must generate different output displacements and forces at different specified points of the domain and in different directions. The devices were modeled by finite element using the software ANSYS and the topology optimization method. The following XY actuators were build to achieve maximum displacement in the X and Y directions with a minimum crosstalk between them. The actuator prototypes are composed of an aluminum structure, manufactured by using a wire Electrical Discharge Machining, which are bonded to rectangular PZT5A piezoceramic blocks by using epoxy resin. Multi-actuator piezoelectric device displacements can be measured by using optical interferometry, since it allows dynamic measurements in the kHz range, which is of the order of the first resonance frequency of these piezomechanisms. A Michelson-type interferometer, with a He-Ne laser source, is used to measure the displacement amplitudes in nanometric range. A new optical phase demodulation technique is applied, based on the properties of the triangular waveform drive voltage applied to the XY piezoelectric nanopositioner. This is a low-phase-modulation-depth-like technique that allows the rapid interferometer auto-calibration. The measurements were performed at 100 Hz frequency, and revealed that the device is linear voltage range utilized in this work. The ratio between the generated and coupled output displacements and the drive voltages is equal to 10.97 nm/V and 1.76 nm/V, respectively, which corresponds to a 16% coupling rate. © 2010 IEEE.

Análise teórica e experimental de um método interferométrico de detecção de fase óptica, auto-consistente e com elevada faixa dinâmica, aplicado à caracterização de atuadores piezoelétricos flextensionais

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)