779 resultados para Doped sample
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In this work parameters of Mg-doped GaN samples were studied using positron annihilation spectroscopy and analyzed. It is shown that gallium vacancies exist in an unintentionally doped sample. Next, the sample with higher concentration of Mg and low growth temperature contains vacancy clusters. In case of low concentration of Mg the growth temperature does not affect the formation of defects. Analog electronics can be replaced by a modern digital device. While promising a high quantity of benefits, the performance of these digitizers requires thorough adjustment. A 14-bit two channel digitizer has been tested in order to achieve better performance than the one of a traditional analog setup, and the adjustment process is described. It has been shown that the digital device is unable to achieve better energy resolution, but it is quite close to the corresponding attribute of the available analog system, which had been used for measurements in Mg-doped GaN.
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The far infrared reflectance of Sb2Te3 , Sbi.97Vo.o3Te3 and Sbi.94Cr .o6Te3 was measured near normal incidence at different temperatures (between 45K and 300K). The direct current resistivities of the above samples were also measured between the temperatures of 4K and 300K. Also Kramers Kronig (KK) analyses were performed on the reflectance spectra to obtain the optical conductivities. In the doped samples, it was observed that a phonon at 62cm-1 softens to about 55cm-1 on decreasing the temperature from 295K to 45K. Also, it was observed that the plasma frequency of the doped samples is independent of doping. The scattering rate for the vanadium doped sample was seen to be greater than that for the chromium doped sample despite the fact that vanadium impurity density is less than that of chromium. The Drude-Lorentz model fits to the KK optical conductivity show that the samples used in this work are conventional metals. Definitive measurements of the temperature dependence of the scattering rate across the ferromagnetic transition await equipment changes allowing measurements at low temperature using the mercury cadmium telluride (MCT) detector.
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An open cell photoacoustic configuration has been employed to evaluate the thermal diffusivity of pure InP as well as InP doped with sulphur and iron. Chopped optical radiation at 488 nm from an Ar-ion laser has been used to excite photoacoustic signals which been detected by a sensitive electret microphone. Thermal diffusivity value have been calculated from phase versus chopping frequency plots. Doped sample are found to show a reduced value for thermal diffusivity in comparison with intrinsically pure sample. The results have been interpreted in terms of the mechanisms of heat generation and transmission in semiconductors.
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Bi 4Ti 3- xNbxO 12 (BITNb) samples, with × ranging from 0 to 0.40 were obtained using a polymeric precursor solution. Rietveld analyses confirmed that the powders crystallize in an orthorhombic structure free of secondary phases with space group Fmmm. Raman analysis evidenced a sharp increase in the bands intensity located at 129 cm -1 and 190 cm -1 due the lattice distortion in BIT02Nb and BIT04Nb compositions. UV-vis spectra indicated that addition of niobium causes a reduction of defects in the BIT lattice due the suppression of oxygen vacancies located at BO-6 octahedral. Size and morphology of particles as well as electrical behavior of BIT ceramics were affected by addition of donor dopant. Polarization reversal was investigated by applying dc voltage through a conductive tip during the area scanning and was investigated by piezoresponse force microscopy (PFM). PFM measurements revealed a decrease in piezoelectric response with increasing Nb concentration originating from a reduced polarizability along the a-axis. High spontaneous polarization is noted for the less doped sample due the reduction of strain energy and pin charged defects after niobium addition. Copyright © 2010 American Scientific Publishers.
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Herein, the preferential oxidation of CO in excess hydrogen (PROX reaction) was studied over Au catalysts supported on ceria and Y or Nb doped ceria. Both supports and catalysts have been extensively characterized by a number of advanced techniques; XRD, N2-adsortion, Raman spectroscopy, XPS, and H2-TPR. The catalytic results showed that when an ideal mixture of H2 and CO is used for the PROX reaction the gold supported on pure ceria behaves better than the others samples. However, when a typical reformate gas composition containing CO2 and H2O is used, the gold supported on Nb doped sample behaves better than gold supported in pure ceria. It is suggested that niobium hampers the strong adsorption of CO2 and H2O in the active sites, thus improving the catalytic performance in real reformate gas.
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Thermoluminescence (TL) and Optically Stimulated Luminescence (OSL) properties of KAlSi(3)O(8):Mn glasses obtained through the sol gel technique were investigated. Samples were obtained with five different molar concentrations of 0.25, 0.5, 1, 2 and 5 mol% of manganese. Transmission Electronic Microscopy (TEM) indicated the occurrence of nanoparticles composed by glass matrix elements with Mn. Best results for TL response were obtained with 0.5 mol% Mn doped sample, which exhibits a TL peak at 180 degrees C. The TL spectrum of this sample presents a broad emission band from 450 to 700 nm with a peak at 575 nm approximately. The emission band fits very well with the characteristic lines of the Mn(2+) emission features. According to this fact, the band at 410 nm can be ascribed to (6)A(1)(S) -> (4)A(1)(G), (4)E(G) transition, while the 545 nm band can be attributed to the superposition of the transitions (6)A(1)(S) -> (4)T(2)(G) and (6)A(1)(S) -> (4)T(1)(G). The dependence of the TL response with the energy of X-rays (27-41 keV) showed a small decrease of the TL intensity in the high energy region. Excitation with blue LEDs showed OSL in the UV region with a fast decay component. (C) 2011 Elsevier Ltd. All rights reserved.
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The first observation of the elusive Fe4+ charge state coming from the nuclear decay of 57Co3+ has been found in the Mössbauer emission spectra of 57Co:La2Li0.5Co0.5O4. A Ti-doped sample was prepared in order to show that the Fe4+ fraction can be conveniently monitored. Both results were predicted on the basis of the electronic energy-band scheme of these oxides.
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Gadolinium oxyortho-silicate, Gd2SiO5, presents a monoclinic structure with two crystallographic sites in which Gd3+ ions are equally distributed with coordination numbers CN, 7 and 9, respectively. By doping this host with Er3+ it is possible to distinguish and attribute the two sites by means of lifetime determination of the 4S3/2 state, (in this case, Er3+ substitutes Gd3+ ions). Samples doped with 0.1 and 5.0% molar Er3+ were prepared by solid state reaction and characterized by X-ray Diffractometry, Vibrational and Electronic Absorption Spectroscopies, and Time Resolved Photoluminescence. Based on the experimental results, it is possible to verify that, for the 5,0% doped sample, the lifetime value of the 4S3/2 state of the erbium ion inserted in site 1, (CN = 9), is 2.7 ± 0.1 mus, and for the one inserted in site 2, (CN = 7), it is 1.5 ± 0.1 mus.
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TiO2 nanotubes were synthesized by hydrothermal method and doped with three nitrogen compounds to enhance photocatalytic activity under visible light. Catalysts were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), diffuse reflectance spectroscopy (DRS) and specific surface area and pore volume determined by BET and BJH methods, respectively. Photocatalytic activity was evaluated by photodegradation of rhodamine B under visible and UV radiations. Results showed doped-nanotubes were more efficient under visible light. The best photocatalytic activity was for sample NTT-7-600/NH3I, being 30% higher than the non-doped sample.
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The perovskite crystal structure is host to many different materials from insulating to superconducting providing a diverse range of intrinsic character and complexity. A better fundamental description of these materials in terms of their electronic, optical and magnetic properties undoubtedly precedes an effective realization of their application potential. SmTiOa, a distorted perovskite has a strongly localized electronic structure and undergoes an antiferromagnetic transition at 50 K in its nominally stoichiometric form. Sr2Ru04 is a layered perovskite superconductor (ie. Tc % 1 K) bearing the same structure as the high-tem|>erature superconductor La2_xSrrCu04. Polarized reflectance measurements were carried out on both of these materials revealing several interesting features in the far-infrared range of the spectrum. In the case of SmTiOa, although insulating, evidence indicates the presence of a finite background optical conductivity. As the temperature is lowered through the ordering temperature a resonance feature appears to narrow and strengthen near 120 cm~^ A nearby phonon mode appears to also couple to this magnetic transition as revealed by a growing asymmetry in the optica] conductivity. Experiments on a doped sample with a greater itinerant character and lower Neel temperature = 40 K also indicate the presence of this strongly temperature dependent mode even at twice the ordering temperature. Although the mode appears to be sensitive to the magnetic transition it is unclear whether a magnon assignment is appropriate. At very least, evidence suggests an interesting interaction between magnetic and electronic excitations. Although Sr2Ru04 is highly anisotropic it is metallic in three-dimensions at low temperatures and reveals its coherent transport in an inter-plane Drude-like component to the highest temperatures measured (ie. 90 K). An extended Drude analysis is used to probe the frequency dependent scattering character revealing a peak in both the mass enhancement and scattering rate near 80 cm~* and 100 cm~* respectively. All of these experimental observations appear relatively consistent with a Fermi-liquid picture of charge transport. To supplement the optical measurements a resistivity station was set up with an event driven object oriented user interface. The program controls a Keithley Current Source, HP Nano-Voltmeter and Switching Unit as well as a LakeShore Temperature Controller in order to obtain a plot of the Resistivity as a function of temperature. The system allows for resistivity measurements ranging from 4 K to 290 K using an external probe or between 0.4 K to 295 K using a Helium - 3 Cryostat. Several materials of known resistivity have confirmed the system to be robust and capable of measuring metallic samples distinguishing features of several fiQ-cm.
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Lead chromium oxide is a photoconductive dielectric material tha t has great potential of being used as a room temperature photodetector. In this research, we made ceramic pellets of this compound as well as potassium doped compound Pb2-xKxCr05, where x=O, 0.05, 0.125. We also investigate the properties of the lanthanum doped sample whose chemical formula is Pb1.85Lao.15Cr05' The electronic, magnetic and thermal properties of these materials have been studied. Magnetization measurements of the Pb2Cr05 sample indicate a transition at about 310 K, while for the lanthanum doped sample the transition temperature is at about 295 K indicating a paramagnetic behavior. However, the potassium doped samples are showing the transition from paramagnetic state to diamagnetic state at different temperatures for different amounts of potassium atoms present in the sample. We have studied resistivity as a function of temperature in different gas environments from 300 K to 900 K. The resistivity measurement of the parent sample indicates a conducting to insulating transition at about 300 K and upon increasing the temperature further, above 450 K the sample becomes an ionic conductor. As temperature increases a decrease in resistance is observed in the lanthanum/potassium doped samples. Using Differential Scanning Calorimetry experiment an endothermic peak is observed for the Pb2Cr05 and lanthanum/potassium doped samples at about 285 K.
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The electrical conductivity and thermal diffusivity of pristine and iodine doped vanadyl naphthalocyanine (VONc) were studied. In the pristine sample, the temperature dependence was very weak below 300 K. The increase in conductivity at higher temperature must be due to an enhancement in carrier density with increase in thermal energy. The electrical conductivity of VONc increased when doped with iodine. The behavior of VONcI indicated that considerable changes have occurred in the electronic environment of the molecule as a result of doping. Iodine doping enhanced the thermal diffusivity of VONc. The increase in thermal diffusivity of the iodine doped sample may be due to the disorder of iodine atoms occupying the channels in one dimensional lattices.
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Plasma polymerization is found to be an excellent technique for the preparation of good quality, pinhole-free, polymer thin films from different monomer precursors. The present work describes the preparation and characterization of polypyrrole (PPy) thin films by ac plasma polymerization technique in their pristine and in situ iodine doped forms. The electrical conductivity studies of the aluminiumpolymeraluminium (AlpolymerAl) structures have been carried out and a space charge limited conduction (SCLC) mechanism is identified as the most probable mechanism of carrier transport in these polymer films. The electrical conductivity shows an enhanced value in the iodine doped sample. The reduction of optical band gap by iodine doping is correlated with the observed conductivity results.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)