Positron measurements in Mg-doped GaN and development of digital Doppler broadening spectroscopy


Autoria(s): Prozheeva, Vera
Data(s)

30/05/2012

30/05/2012

2012

Resumo

In this work parameters of Mg-doped GaN samples were studied using positron annihilation spectroscopy and analyzed. It is shown that gallium vacancies exist in an unintentionally doped sample. Next, the sample with higher concentration of Mg and low growth temperature contains vacancy clusters. In case of low concentration of Mg the growth temperature does not affect the formation of defects. Analog electronics can be replaced by a modern digital device. While promising a high quantity of benefits, the performance of these digitizers requires thorough adjustment. A 14-bit two channel digitizer has been tested in order to achieve better performance than the one of a traditional analog setup, and the adjustment process is described. It has been shown that the digital device is unable to achieve better energy resolution, but it is quite close to the corresponding attribute of the available analog system, which had been used for measurements in Mg-doped GaN.

Identificador

http://www.doria.fi/handle/10024/77097

Idioma(s)

en

Palavras-Chave #Doppler broadening spectroscopy #positron annihilation spectroscopy #Doppler parameters #gallium nitride #digitizer #semiconductor
Tipo

Diplomityö

Master's thesis