Thermal characterisation of doped InP using photoacoustic technique


Autoria(s): Sajan, D George; Achamma, Kurian; Martin, Lase; Nampoori, V P N; Vallabhan, C P G
Data(s)

03/11/2011

03/11/2011

2001

Resumo

An open cell photoacoustic configuration has been employed to evaluate the thermal diffusivity of pure InP as well as InP doped with sulphur and iron. Chopped optical radiation at 488 nm from an Ar-ion laser has been used to excite photoacoustic signals which been detected by a sensitive electret microphone. Thermal diffusivity value have been calculated from phase versus chopping frequency plots. Doped sample are found to show a reduced value for thermal diffusivity in comparison with intrinsically pure sample. The results have been interpreted in terms of the mechanisms of heat generation and transmission in semiconductors.

Cochin University of Science and Technology

Identificador

http://dyuthi.cusat.ac.in/purl/2469

Idioma(s)

en

Publicador

SPIE

Palavras-Chave #thermal diffusivity #compound semiconductor #doping
Tipo

Working Paper