Enhancement of the electrooxidation of ethanol on Pt-Sn-P/C catalysts prepared by chemical deposition process

In this paper, five Pt3Sn1/C catalysts have been prepared using three different methods. It was found that phosphorus deposited on the surface of carbon with Pt and Sn when sodium hypophosphite was used as reducing agent by optimization of synthetic conditions such as pH in the synthetic solution and temperature. The deposition of phosphorus should be effective on the size reduction and markedly reduces PtSn nanoparticle size, and raise electrochemical active surface (EAS) area of catalyst and improve the catalytic performance. TEM images show PtSnP nanoparticles are highly dispersed on the carbon surface with average diameters of 2 nm. The optimum composition is Pt3Sn1P2/C (note PtSn/C-3) catalyst in my work. With this composition, it shows very high activity for the electrooxidation of ethanol and exhibit enhanced performance compared with other two Pt3Sn1/C catalysts that prepared using ethylene glycol reduction method (note PtSn/C-EG) and borohydride reduction method (note PtSn/-B). The maximum power densities of direct ethanol fuel cell (DEFC) were 61 mW cm(-2) that is 150 and 170% higher than that of the PtSn/C-EG and PtSn/C-B catalyst.

Liquid source misted chemical deposition process of three-dimensional nano-ferroelectrics with substrate heating

A modification of liquid source misted chemical deposition process (LSMCD) with heating mist and substrate has developed, and this enabled to control mist penetrability and fluidity on sidewalls of three-dimensional structures and ensure step coverage. A modified LSMCD process allowed a combinatorial approach of Pb(Zr,Ti)O-3 (PZT) thin films and carbon nanotubes (CNTs) toward ultrahigh integration density of ferroelectric random access memories (FeRAMs). The CNTs templates were survived during the crystallization process of deposited PZT film onto CNTs annealed at 650 degrees C in oxygen ambient due to a matter of minute process, so that the thermal budget is quite small. The modified LSMCD process opens up the possibility to realize the nanoscale capacitor structure of ferroelectric PZT film with CNTs electrodes toward ultrahigh integration density FeRAMs.

Chemical deposition of La0.7Ca0.3MnO3±δ films on ceramic substrates

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Soft chemical deposition of BiFeO3 multiferroic thin films

BiFeO3 thin films free of secondary phases were obtained by the soft chemical solution on Pt(111)/Ti/SiO2/Si substrates after annealing at 500 degrees C for 2 h. The film grown in the (100) direction presented a remanent polarization P-r of 31 mu C/cm(2) at room temperature. Electrical measurements using both quasistatic hysteresis and pulsed polarization confirm the existence of ferroelectricity with a switched polarization of 60-70 mu C/cm(2), Delta P=(P-*-P). Low leakage conduction and an out-of-plane piezoelectric (d(3)) coefficient of 40 pm/V were obtained by the improvement of preparation technology.

Very large dielectric constant of highly oriented Pb1-xBaxTiO3 thin films prepared by chemical deposition

Highly (100) oriented Pb0.8Ba0.2TiO3/LaNiO3 structures were grown on LaAlO3(100) substrates by using a wet, soft chemical method and crystallized by the microwave oven technique. The Au/PBT/LaNiO3/LaAlO3 capacitor shows a hysteresis loop with remnant polarization, P-r, of 15 muC/cm(2), and coercive field, E-c, of 47 kV/cm at an applied voltage of 3 V, along with a dielectric constant over 1800. Atomic force microscopy showed that Pb0.8Ba0.2TiO3 is composed of large grains about 300 nm. The experimental results demonstrated that the microwave preparation is rapid, clean, and energy efficient. Therefore, we demonstrated that the combination of the soft chemical method with the microwave process is a promising technique to grow highly oriented thin films with excellent dielectric and ferroelectric properties, which can be used in various integrated device applications. (C) 2004 American Institute of Physics.

Commercially pure titanium implants with surfaces modified by laser beam with and without chemical deposition of apatite. Biomechanical and topographical analysis in rabbits

Objectives: The purpose of this study was to evaluate the surfaces of commercially pure titanium (cp Ti) implants modified by laser beam (LS), without and with hydroxyapatite deposition by the biomimetic method (HAB), without (HAB) and with thermal treatment (HABT), and compare them with implants with surfaces modified by acid treatment (AS) and with machined surfaces (MS), employing topographical and biomechanics analysis. Methods: Forty-five rabbits received 75 implants. After 30, 60, and 90 days, the implants were removed by reverse torque and the surfaces were topographically analyzed. Results: At 30 days, statistically significant difference (P < 0.05) was observed among all the surfaces and the MS, between HAB/HABT and AS and between HAB and LS. At 60 days, the reverse torque of LS, HAB, HABT, and AS differed significantly from MS. At 90 days, difference was observed between HAB and MS. The microtopographic analysis revealed statistical difference between the roughness of LS, HAB, and HABT when compared with AS and MS. Conclusions: It was concluded that the implants LS, HAB, and HABT presented physicochemical and topographical properties superior to those of AS and MS and favored the osseointegration process in the shorter periods. In addition, HAB showed the best results when compared with other surfaces. © 2012 John Wiley & Sons A/S.

The effect of growth temperature on structural quality of GaN/AlN quantum wells by metal-organic chemical vapour deposition

The effect of the growth temperature on the surface and interface quality for the GaN/AlN multiquantum well (MQW) layer grown by metal-organic vapour chemical deposition is investigated. The obtained GaN/AlN MQW structure is almost coherent to the underlying AlGaN layer at improved growth conditions. With a relatively low growth temperature, the GaN/AlN MQW growth rate increases, the surface roughness reduces considerably and no macro steps are observed, resulting in a better periodicity of MQW.

Deposition of bodily chemical components in the carcass of tilapia (oreochromis sp.) strains

The knowledge of how animals deposited chemical components as water, protein, fat and ash in the carcass is importance for the formulation of a balanced diet, allowing maximum performance with a low environmental impact. So, the study was carried out to evaluate the influence of different tilapia strains (Chitralada, Commercial, Red and Universidade Federal de Lavras [UFLA]) on the deposition of bodily chemical components in the carcass. The bodily components analyzed were water, protein, fat and ash. For the determination of the bodily chemical deposition curves by age, the exponential, Brody, logistic, Gompertz and von Bertalanffy models were adjusted. The Commercial and UFLA strains deposited water at a faster speed (P<0.05) compared with the remaining strains. As for protein, the Red strain had a lower estimated maturity weight (49.37 g), and was more precocious (202 days) with regard to maximum deposition in comparison to the other strains (Chitralada, UFLA and Commercial) in which there was an estimated maturity weight of 231.5 g and maximum depositionfor 337 days. There were no differences (P>0.05) for the logistic model parameter between Red, UFLA and Commercial strains for fat, which presented a maximum fat deposition (0.23 g) at 310 days of age. Regarding ash deposition, the Commercial strain presented a higher maximum deposition (0.10 g) at 337 days, occurring later than the other strains that presented maximum deposition (0.033g) at 254 days of age. Thus, it was concluded that the genetic strains evaluated differ in chemical deposition curves of water, protein, fat and ash.

Studies on Chemical Bath Deposited Semiconducting Copper Selenide and Iron Sulfide Thin Films Useful For Photovoltaic Applications

Chemical bath deposition (CBD)is one of the simplest, very convient and probably the cheapest method for thin film preparation. Photovoltaic is the cleanest and the most efficient mode of conversion of energy to electrical power. Silicon is the most popular material in this field. The present study on chemical bath deposited semiconducting copper selenide and iron sulfide thin films useful for photovoltaic applications. Semiconducting thin films prepared by chemical deposition find applications as photo detectors, solar control coatings and solar cells. Copper selenide is a p-type semiconductor that finds application in photovolitics. Several heterojunction systems such as Cu2-xSe/ZnSe (for injection electro luminescence), Cu2Se/AgInSe2 and Cu2Se/Si (for photodiodes), Cu2-xSe/CdS, Cu2-xSe/CdSe, CuxSe/InP and Cu2-xSe/Si for solar cells are reported. A maximum efficiency of 8.3% was achieved for the Cu2-xSe/Si cell, various preparation techniques are used for copper selenide like vacuum evaporation, direct reaction, electrodeposition and CBD. Instability of the as-prepared films was investigation and is accounted as mainly due to deviation from stoichiometry and the formation of iron oxide impurity. A sulphur annealing chamber was designed and fabricated for this work. These samples wee also analysed using optical absorption technique, XPS (X-ray Photoelectron Spectroscopy) and XRD.(X-Ray Diffraction).The pyrite films obtained by CBD technique showed amorphous nature and the electrical studies carried out showed the films to be of high resistive nature. Future work possible in the material of iron pyrite includes sulphur annealing of the non-stochiometric iron pyrite CBD thin films in the absence of atmospheric oxygen

Spray deposition and losses in potato as a function of air-assistance and sprayer boom angle

A cultura da batata possui grande expressão econômica dentro do cenário agrícola. Para isso, equipamentos e técnicas de aplicação de produtos fitossanitários vêm sendo desenvolvidos visando melhorar o rendimento econômico da cultura. Neste sentido, experimentos foram conduzidos no delineamento em blocos ao acaso na cultura da batata cv. Ágata. Objetivando avaliar o efeito da assistência de ar combinada a diferentes ângulos de aplicação sobre a deposição da pulverização, bem como as perdas da calda para o solo utilizou-se um pulverizador com e sem assistência de ar junto à barra de pulverização posicionada a +30º, 0º e -30º (sinal + a favor e - contrário ao deslocamento) em relação a vertical. O volume de calda foi 400 L ha-1 utilizando-se pontas de jato cônico vazio JA-4 na pressão de 633 kPa. Para a avaliação dos depósitos utilizou-se um traçador cúprico. Os depósitos foram removidos dos folíolos por lavagem com água destilada, em ambas as superfícies foliares, nas posições superior e inferior das plantas de batata e quantificados por espectrofotometria de absorção atômica. As perdas da pulverização foram avaliadas em coletores plásticos colocados nas entrelinhas das parcelas experimentais. Os níveis dos depósitos do traçador cúprico nas diferentes posições da planta foram analisados pelo teste estatístico T² de Hotteling. Os maiores depósitos foram obtidos com a barra posicionada a 0º e +30º, em presença da assistência de ar, tanto na posição superior quanto inferior da planta. A presença do ar, além de propiciar maiores depósitos na parte inferior das plantas, possibilitou maior uniformidade na distribuição deles. As perdas da pulverização ficaram abaixo de 4%.

Synthesis of functional nanoassemblies in reactive plasmas

Synthesis of various functional nanoassemblies, by using a combination of low-pressure reactive plasma-enhanced chemical deposition and plasma-assisted rf magnetron sputtering deposition is reported. This paper details how selective generation and manipulation of the required building blocks and management of unwanted nanoparticle contaminants, can be used for plasma-aided nanofabrication of carbon nanotip microemitter structures, ultra-high aspect ratio semiconductor nanowires, ordered quantum dot arrays, and microporous hydroxyapatite bioceramics. Emerging challenges of the plasma-aided synthesis of functional nanofilms and nanoassemblies are also discussed.

Review on Tin (II) Sulfide (SnS) Material: Synthesis, Properties, and Applications

Tin (II) sulphide (SnS), a direct band gap semiconductor compound, has recently received great attention due to its unique properties. Because of low cost, absence of toxicity, and good abundance in nature, it is becoming a candidate for future multifunctional devices particularly for light conversion applications. Although the current efficiencies are low, the cost-per-Watt is becoming competitive. At room temperature, SnS exhibits stable low-symmetric, double-layered orthorhombic crystal structure, having a = 0.4329, b = 1.1192, and c = 0.3984nm as lattice parameters. These layer-structured materials are of interest in various device applications due to the arrangement of structural lattice with cations and anions. The layers of cations are separated only by van der Waals forces that provide intrinsically chemically inert surface without dangling bonds and surface density of states. As a result, there is no Fermi level pinning at the surface of the semiconductor. This fact leads to considerably high chemical and environmental stability. Further, the electrical and optical properties of SnS can be easily tailored by modifying the growth conditions or doping with suitable dopants without disturbing its crystal structure.In the last few decades, SnS has been synthesized and studied in the form of single-crystals and thin-films. Most of the SnS single-crystals have been synthesized by Bridgeman technique, whereas thin films have been developed using different physical as well as chemical deposition techniques. The synthesis or development of SnS structures in different forms including single-crystals and thin films, and their unique properties are reviewed here. The observed physical and chemical properties of SnS emphasize that this material could has novel applications in optoelectronics including solar cell devices, sensors, batteries, and also in biomedical sciences. These aspects are also discussed.

激光热处理对化学沉积Ni-P合金薄膜性能的影响

用扫描电镜(SEM)观察了化学沉积Ni-P合金薄膜/单晶硅基体的结构与颗粒度,利用X射线衍射(XRD)技术测试了其化学沉积后的残余应力,测量了激光热处理后残余应力的变化规律,分析了残余应力对磨损性能及界面结合强度的影响。实验结果表明,化学沉积Ni-P合金薄膜/硅基体的残余应力均表现为拉应力,经过激光热处理后残余应力发生了变化,由高值的拉应力变为低值的拉应力或压应力；薄膜残余应力对其磨损性能有明显的影响,其磨损量随着残余应力的减小而减小；薄膜与基体结合强度随着残余应力的增大而减小,合理地选择激光热处理参数可

Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy

A two-step approach of preparation for SiGe/Si heterogeneous nanostructures, which combined with ultra-high vacuum chemical deposition and electrochemical anodization techniques, is demonstrated. Uniformly distributed nanostructures with a quite uniform distribution of size and morphology are obtained. A strong room-temperature photoluminescence from the nanostructures was observed with a narrow full-width at half-maximum of around 110 meV. The possible origins of the two main peaks at around 1.6 and 1.8 eV have been discussed in detail. The two-step approach is proved to be a promising method to fabricate new Si-based optoelectronic materials. (C) 2009 Elsevier B.V. All rights reserved.

Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates

Single crystal GaN films of hexagonal modification have been fabricated on Al2O3/Si (001) substrates via a low pressure metalorganic chemical deposition (LP-MOCVD) method. The full width at half-maximum of (0002) X-ray diffraction peak for the GaN film 1.1 mu m thick was 72 arcmin. and the mosaic structure of the film was the main cause of broadening to the X-ray diffraction peak. Al room temperature, the photoluminescence (PL) spectrum of GaN exhibited near band edge emission peaking at 365 nm.