BiCMOS射频低噪声放大器设计中的高线性度研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

A pll based frequency synthesizer in 0.13 um sige bicmos for mb-ofdm uwb systems

With the growing demand for high-speed and high-quality short-range communication, multi-band orthogonal frequency division multiplexing ultra-wide band (MB-OFDM UWB) systems have recently garnered considerable interest in industry and in academia. To achieve a low-cost solution, highly integrated transceivers with small die area and minimum power consumption are required. The key building block of the transceiver is the frequency synthesizer. A frequency synthesizer comprised of two PLLs and one multiplexer is presented in this thesis. Ring oscillators are adopted for PLL implementation in order to drastically reduce the die area of the frequency synthesizer. The poor spectral purity appearing in the frequency synthesizers involving mixers is greatly improved in this design. Based on the specifications derived from application standards, a design methodology is presented to obtain the parameters of building blocks. As well, the simulation results are provided to verify the performance of proposed design.

An analog implementation of radial basis neural networks (RBNN) using BiCMOS technology

This paper describes a analog implementation of radial basis neural networks (RBNN) in BiCMOS technology. The RBNN uses a gaussian function obtained through the characteristic of the bipolar differential pair. The gaussian parameters (gain, center and width) is changed with programmable current source. Results obtained with PSPICE software is showed.

Proposta de implementação de redes de base radial em tecnologias CMOS e BiCMOS

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Diseño de un amplificador de bajo ruido realimentado para la banda de 3-10 GHz en tecnología BICMOS 0.35 μm

Proyecto y presentación del Proyecto Fin de Carrera titulado "Diseño de un Amplificador de Bajo Ruido Realimentado para la Banda de 3-10 GHz en Tecnología BICMOS 0.35 μm"

Design and coupled-effect simulations of CMOS micro gas-sensors built on SOI thin membranes

This paper describes coupled-effect simulations of smart micro gas-sensors based on standard BiCMOS technology. The smart sensor features very low power consumption, high sensitivity and potential low fabrication cost achieved through full CMOS integration. For the first time the micro heaters are made of active CMOS elements (i.e. MOSFET transistors) and embedded in a thin SOI membrane consisting of Si and SiO2 thin layers. Micro gas-sensors such as chemoresistive, microcalorimeteric and Pd/polymer gate FET sensors can be made using this technology. Full numerical analyses including 3D electro-thermo-mechanical simulations, in particular stress and deflection studies on the SOI membranes are presented. The transducer circuit design and the post-CMOS fabrication process, which includes single sided back-etching, are also reported.

Design and simulations of SOI CMOS micro-hotplate gas sensors

This paper describes a new generation of integrated solid-state gas-sensors embedded in SOI micro-hotplates. The micro-hotplates lie on a SOI membrane and consist of MOSFET heaters that elevate the operating temperature, through self-heating, of a gas sensitive material. These sensors are fully compatible with SOI CMOS or BiCMOS technologies, offer ultra-low power consumption (under 100 mW), high sensitivity, low noise, low unit cost, reproducibility and reliability through the use of on-chip integration. In addition, the new integrated sensors offer a nearly uniform temperature distribution over the active area at its operating temperatures at up to about 300-350°C. This makes SOI-based gas-sensing devices particularly attractive for use in handheld battery-operated gas monitors. This paper reports on the design of a chemo-resistive gas sensor and proposes for the first time an intelligent SOI membrane microcalorimeter using active micro-FET heaters and temperature sensors. A comprehensive set of numerical and analogue simulations is also presented including complex 2D and 3D electro-thermal numerical analyses. © 2001 Elsevier Science B.V. All rights reserved.

p-MOS controlled lateral thyristor: A MOS controllable thyristor suitable for integration

A novel CMOS compatible lateral thyristor is proposed in this paper. Its thyristor conduction is fully controlled by a p-MOS gate. Loss of MOS control due to parasitic latch-up has been eliminated and triggering of the main thyristor at lower forward current achieved. The device operation has been verified by 2-D numerical simulations and experimental fabrication.