BiCMOS射频低噪声放大器设计中的高线性度研究


Autoria(s): 徐化
Contribuinte(s)

石寅

Data(s)

2005

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Made available in DSpace on 2009-04-13T11:45:31Z (GMT).

Made available in DSpace on 2009-07-09T01:36:08Z (GMT). No. of bitstreams: 1 disk/eh2005/xh.pdf: 1011755 bytes, checksum: b7d892e20fa46cac922ed600df096f0f (MD5) Previous issue date: 2005

Identificador

http://ir.semi.ac.cn/handle/172111/5403

http://www.irgrid.ac.cn/handle/1471x/60263

Idioma(s)

中文

Fonte

徐化.BiCMOS射频低噪声放大器设计中的高线性度研究.[硕士].北京.中国科学院半导体研究所.2005

Palavras-Chave #微电子学与固体电子学
Tipo

学位论文