Uma interface para o aumento da faixa de freqüências de operação de FPAAS

O crescente avanço nas mais diversas áreas da eletrônica, desde instrumentação em baixa freqüência até telecomunicações operando em freqüências muito elevadas, e a necessidade de soluções baratas em curto espaço de tempo que acompanhem a demanda de mercado, torna a procura por circuitos programáveis, tanto digitais como analógicos, um ponto comum em diversas pesquisas. Os dispositivos digitais programáveis, que têm como grande representante os Field Programmable Gate Arrays (FPGAs), vêm apresentando um elevado e contínuo crescimento em termos de complexidade, desempenho e número de transistores integrados, já há várias décadas. O desenvolvimento de dispositivos analógicos programáveis (Field Programmable Analog Arrays – FPAAs), entretanto, esbarra em dois pontos fundamentais que tornam sua evolução um tanto latente: a estreita largura de banda alcançada, conseqüência da necessidade de um grande número de chaves de programação e reconfiguração, e a elevada área consumida por componentes analógicos como resistores e capacitores, quando integrados em processos VLSI Este trabalho apresenta uma proposta para aumentar a faixa de freqüências das aplicações passíveis de serem utilizadas tanto em FPAAs comerciais quanto em outros FPAAs, através da utilização de uma interface de translação e seleção de sinais, mantendo características de programabilidade do FPAA em questão, sem aumentar em muito sua potência consumida. A proposta, a simulação e a implementação da interface são apresentadas ao longo desta dissertação. Resultados de simulação e resultados práticos obtidos comprovam a eficácia da proposta.

Controlo de conversores de potência genéricos por FPGA

Dissertação para obtenção do grau de Mestre em Engenharia Eletrotécnica Ramo de Automação e Eletrónica Industrial

Controller implementation using analog reconfigurable hardware (FPAA)

This Thesis has the main target to make a research about FPAA/dpASPs devices and technologies applied to control systems. These devices provide easy way to emulate analog circuits that can be reconfigurable by programming tools from manufactures and in case of dpASPs are able to be dynamically reconfigurable on the fly. It is described different kinds of technologies commercially available and also academic projects from researcher groups. These technologies are very recent and are in ramp up development to achieve a level of flexibility and integration to penetrate more easily the market. As occurs with CPLD/FPGAs, the FPAA/dpASPs technologies have the target to increase the productivity, reducing the development time and make easier future hardware reconfigurations reducing the costs. FPAA/dpAsps still have some limitations comparing with the classic analog circuits due to lower working frequencies and emulation of complex circuits that require more components inside the integrated circuit. However, they have great advantages in sensor signal condition, filter circuits and control systems. This thesis focuses practical implementations of these technologies to control system PID controllers. The result of the experiments confirms the efficacy of FPAA/dpASPs on signal condition and control systems.

FPGA-Based Control Design for Power Electronic Applications

Tehoelektoniikkalaitteella tarkoitetaan ohjaus- ja säätöjärjestelmää, jolla sähköä muokataan saatavilla olevasta muodosta haluttuun uuteen muotoon ja samalla hallitaan sähköisen tehon virtausta lähteestä käyttökohteeseen. Tämä siis eroaa signaalielektroniikasta, jossa sähköllä tyypillisesti siirretään tietoa hyödyntäen eri tiloja. Tehoelektroniikkalaitteita vertailtaessa katsotaan yleensä niiden luotettavuutta, kokoa, tehokkuutta, säätötarkkuutta ja tietysti hintaa. Tyypillisiä tehoelektroniikkalaitteita ovat taajuudenmuuttajat, UPS (Uninterruptible Power Supply) -laitteet, hitsauskoneet, induktiokuumentimet sekä erilaiset teholähteet. Perinteisesti näiden laitteiden ohjaus toteutetaan käyttäen mikroprosessoreja, ASIC- (Application Specific Integrated Circuit) tai IC (Intergrated Circuit) -piirejä sekä analogisia säätimiä. Tässä tutkimuksessa on analysoitu FPGA (Field Programmable Gate Array) -piirien soveltuvuutta tehoelektroniikan ohjaukseen. FPGA-piirien rakenne muodostuu erilaisista loogisista elementeistä ja niiden välisistä yhdysjohdoista.Loogiset elementit ovat porttipiirejä ja kiikkuja. Yhdysjohdot ja loogiset elementit ovat piirissä kiinteitä eikä koostumusta tai lukumäärää voi jälkikäteen muuttaa. Ohjelmoitavuus syntyy elementtien välisistä liitännöistä. Piirissä on lukuisia, jopa miljoonia kytkimiä, joiden asento voidaan asettaa. Siten piirin peruselementeistä voidaan muodostaa lukematon määrä erilaisia toiminnallisia kokonaisuuksia. FPGA-piirejä on pitkään käytetty kommunikointialan tuotteissa ja siksi niiden kehitys on viime vuosina ollut nopeaa. Samalla hinnat ovat pudonneet. Tästä johtuen FPGA-piiristä on tullut kiinnostava vaihtoehto myös tehoelektroniikkalaitteiden ohjaukseen. Väitöstyössä FPGA-piirien käytön soveltuvuutta on tutkittu käyttäen kahta vaativaa ja erilaista käytännön tehoelektroniikkalaitetta: taajuudenmuuttajaa ja hitsauskonetta. Molempiin testikohteisiin rakennettiin alan suomalaisten teollisuusyritysten kanssa soveltuvat prototyypit,joiden ohjauselektroniikka muutettiin FPGA-pohjaiseksi. Lisäksi kehitettiin tätä uutta tekniikkaa hyödyntävät uudentyyppiset ohjausmenetelmät. Prototyyppien toimivuutta verrattiin vastaaviin perinteisillä menetelmillä ohjattuihin kaupallisiin tuotteisiin ja havaittiin FPGA-piirien mahdollistaman rinnakkaisen laskennantuomat edut molempien tehoelektroniikkalaitteiden toimivuudessa. Työssä on myösesitetty uusia menetelmiä ja työkaluja FPGA-pohjaisen säätöjärjestelmän kehitykseen ja testaukseen. Esitetyillä menetelmillä tuotteiden kehitys saadaan mahdollisimman nopeaksi ja tehokkaaksi. Lisäksi työssä on kehitetty FPGA:n sisäinen ohjaus- ja kommunikointiväylärakenne, joka palvelee tehoelektroniikkalaitteiden ohjaussovelluksia. Uusi kommunikointirakenne edistää lisäksi jo tehtyjen osajärjestelmien uudelleen käytettävyyttä tulevissa sovelluksissa ja tuotesukupolvissa.

Pré-regulador retificador boost com controle digital por valores médios, para sistema de iluminação fluorescente multi-lâmpadas, utilizando dispositivo FPGA e VHDL

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Filtragem digital e reconstrução de sinais em frequência intermediária usando FPGA

O presente trabalho trata da filtragem e reconstrução de sinais em frequência intermediária usando FPGA. É feito o desenvolvimento de algoritmos usando processamento digital de sinais e também a implementação dos mesmos, constando desde o projeto da placa de circuito impresso, montagem e teste. O texto apresenta um breve estudo de amostragem e reconstrução de sinais em geral. Especial atenção é dada à amostragem de sinais banda-passante e à análise de questões práticas de reconstrução de sinais em frequência intermediária. Dois sistemas de reconstrução de sinais baseados em processamento digital de sinais, mais especificamente reamostragem no domínio discreto, são apresentados e analisados. São também descritas teorias de processos de montagem e soldagem de placas eletrônicas com objetivo de definir uma metodologia de projeto, montagem e soldagem de placas eletrônicas. Tal metodologia é aplicada no projeto e manufatura do protótipo de um módulo de filtragem digital para repetidores de telefonia celular. O projeto, implementado usando FPGA, é baseado nos dois sistemas supracitados. Ao final do texto, resultados obtidos em experimentos de filtragem digital e reconstrução de sinais em frequência intermediária com o protótipo desenvolvido são apresentados.

Modelo comportamental do capacitor ferroelétrico como unidade básica de neurônios artificiais e sua implementação em FPGA

This work proposes the use of the behavioral model of the hysteresis loop of the ferroelectrics capacitor as a new alternative to the usually costly techniques in the computation of nonlinear functions in artificial neurons implemented on reconfigurable hardware platform, in this case, a FPGA device. Initially the proposal has been validated by the implementation of the boolean logic through the digital models of two artificial neurons: the Perceptron and a variation of the model Integrate and Fire Spiking Neuron, both using the model also digital of the hysteresis loop of the ferroelectric capacitor as it’s basic nonlinear unit for the calculations of the neurons outputs. Finally, it has been used the analog model of the ferroelectric capacitor with the goal of verifying it’s effectiveness and possibly the reduction of the number of necessary logic elements in the case of implementing the artificial neurons on integrated circuit. The implementations has been carried out by Simulink models and the synthesizing has been done through the DSP Builder software from Altera Corporation.

Implementação em FPGA de compensadores de desvios para conversor analógico digital intercalado

This work presents the modeling and FPGA implementation of digital TIADC mismatches compensation systems. The development of the whole work follows a top-down methodology. Following this methodology was developed a two channel TIADC behavior modeling and their respective offset, gain and clock skew mismatches on Simulink. In addition was developed digital mismatch compensation system behavior modeling. For clock skew mismatch compensation fractional delay filters were used, more specifically, the efficient Farrow struct. The definition of wich filter design methodology would be used, and wich Farrow structure, required the study of various design methods presented in literature. The digital compensation systems models were converted to VHDL, for FPGA implementation and validation. These system validation was carried out using the test methodology FPGA In Loop . The results obtained with TIADC mismatch compensators show the high performance gain provided by these structures. Beyond this result, these work illustrates the potential of design, implementation and FPGA test methodologies.

Transiting exoplanets from the CoRoT space mission XII. CoRoT-12b: a short-period low-density planet transiting a solar analog star

We report the discovery by the CoRoT satellite of a new transiting giant planet in a 2.83 days orbit about a V = 15.5 solar analog star (M(*) = 1.08 +/- 0.08 M(circle dot), R(*) = 1.1 +/- 0.1 R(circle dot), T(eff) = 5675 +/- 80 K). This new planet, CoRoT-12b, has a mass of 0.92 +/- 0.07 M(Jup) and a radius of 1.44 +/- 0.13 R(Jup). Its low density can be explained by standard models for irradiated planets.

NMR analog of Bell's inequalities violation test

In this paper, we present an analog of Bell's inequalities violation test for N qubits to be performed in a nuclear magnetic resonance (NMR) quantum computer. This can be used to simulate or predict the results for different Bell's inequality tests, with distinct configurations and a larger number of qubits. To demonstrate our scheme, we implemented a simulation of the violation of the Clauser, Horne, Shimony and Holt (CHSH) inequality using a two-qubit NMR system and compared the results to those of a photon experiment. The experimental results are well described by the quantum mechanics theory and a local realistic hidden variables model (LRHVM) that was specifically developed for NMR. That is why we refer to this experiment as a simulation of Bell's inequality violation. Our result shows explicitly how the two theories can be compatible with each other due to the detection loophole. In the last part of this work, we discuss the possibility of testing some fundamental features of quantum mechanics using NMR with highly polarized spins, where a strong discrepancy between quantum mechanics and hidden variables models can be expected.

Trapezoidal SOI FinFET analog parameters` dependence on cross-section shape

The trapezium is often a better approximation for the FinFET cross-section shape, rather than the design-intended rectangle. The frequent width variations along the vertical direction, caused by the etching process that is used for fin definition, may imply in inclined sidewalls and the inclination angles can vary in a significant range. These geometric variations may cause some important changes in the device electrical characteristics. This work analyzes the influence of the FinFET sidewall inclination angle on some relevant parameters for analog design, such as threshold voltage, output conductance, transconductance, intrinsic voltage gain (A V), gate capacitance and unit-gain frequency, through 3D numeric simulation. The intrinsic gain is affected by alterations in transconductance and output conductance. The results show that both parameters depend on the shape, but in different ways. Transconductance depends mainly on the sidewall inclination angle and the fixed average fin width, whereas the output conductance depends mainly on the average fin width and is weakly dependent on the sidewall inclination angle. The simulation results also show that higher voltage gains are obtained for smaller average fin widths with inclination angles that correspond to inverted trapeziums, i.e. for shapes where the channel width is larger at the top than at the transistor base because of the higher attained transconductance. When the channel top is thinner than the base, the transconductance degradation affects the intrinsic voltage gain. The total gate capacitances also present behavior dependent on the sidewall angle, with higher values for inverted trapezium shapes and, as a consequence, lower unit-gain frequencies.

Cryogenic operation of FinFETs aiming at analog applications

FinFETs are recognized as promising candidates for the CMOS nanometer era. In this paper the most recent results for cryogenic operation of FinFETs will be demonstrated with special emphasis on analog applications. Threshold voltage, subthreshold slope and carrier mobility will be studied. Also some important figures of merit for analog circuit operation as for readout electronics, such as transconductance, output conductance and intrinsic voltage gain will be covered. It is demonstrated that the threshold voltage of undoped narrow FinFETs is less temperature-dependent than for a planar single-gate device with similar doping concentration. The temperature reduction improves the transconductance over drain current ratio in any operational region. On the other hand, the output conductance is degraded when the temperature is reduced. The combination of these effects shows that the intrinsic gain of a L = 90 nm FinFET is degraded by 2 dB when the temperature reduces from 300 K to 100 K. (C) 2009 Elsevier Ltd. All rights reserved.

Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation

This work characterizes the analog performance of SOI n-MuGFETs with HfSiO gate dielectric and TiN metal gate with respect to the influence of the high-k post-nitridation. TiN thickness and device rotation. A thinner TiN metal gate is found favorable for improved analog characteristics showing an increase in intrinsic voltage gain. The devices where the high-k material is subjected to a nitridation step indicated a degradation of the Early voltage (V(EA)) values which resulted in a lower voltage gain. The 45 degrees rotated devices have a smaller V(EA) than the standard ones when a HfSiO dielectric is used. However, the higher transconductance of these devices, due to the increased mobility in the (1 0 0) sidewall orientation, compensates this V(EA) degradation of the voltage gain, keeping it nearly equal to the voltage gain values of the standard devices. (C) 2011 Elsevier Ltd. All rights reserved.

Analog performance of standard and strained triple-gate silicon-on-insulator nFinFETs

This work shows a comparison between the analog performance of standard and strained Si n-type triple-gate FinFETs with high-K dielectrics and TiN gate material. Different channel lengths and fin widths are studied. It is demonstrated that both standard and strained FinFETs with short channel length and narrow fins have similar analog properties, whereas the increase of the channel length degrades the early voltage of the strained devices, consequently decreasing the device intrinsic voltage gain with respect to standard ones. Narrow strained FinFETs with long channel show a degradation of the Early voltage if compared to standard ones suggesting that strained devices are more subjected to the channel length modulation effect. (C) 2008 Elsevier Ltd. All rights reserved.

Junctionless Multiple-Gate Transistors for Analog Applications

This paper presents the evaluation of the analog properties of nMOS junctionless (JL) multigate transistors, comparing their performance with those exhibited by inversion-mode (IM) trigate devices of similar dimensions. The study has been performed for devices operating in saturation as single-transistor amplifiers, and we have considered the dependence of the analog properties on fin width W(fin) and temperature T. Furthermore, this paper aims at providing a physical insight into the analog parameters of JL transistors. For that, in addition to device characterization, 3-D device simulations were performed. It is shown that, depending on gate voltage, JL devices can present both larger Early voltage V(EA) and larger intrinsic voltage gain A(V) than IM devices of similar dimensions. In addition, V(EA) and A(V) are always improved in JL devices when the temperature is increased, whereas they present a maximum value around room temperature for IM transistors.