Interlayer interference in double wells in a tilted magnetic field

Magnetotransport measurements on bilayer electron systems reveal repeated reentrance of the resistance minima at filling factors nu=4N+1 and nu=4N+3, where N is the Landau index number, in the tilted magnetic field. At high filling factors, the Shubnikov-de Haas oscillations exhibit beating effects at certain tilt angles. We attribute such behavior to oscillations of the tunneling gap due to Aharonov-Bohm interference effect between cyclotron orbits in different layers. The interplay between quantum and quasiclassical regimes is established.

Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach

We present parameter-free calculations of electronic properties of InGaN, InAlN, and AlGaN alloys. The calculations are based on a generalized quasichemical approach, to account for disorder and composition effects, and first-principles calculations within the density functional theory with the LDA-1/2 approach, to accurately determine the band gaps. We provide precise results for AlGaN, InGaN, and AlInN band gaps for the entire range of compositions, and their respective bowing parameters. (C) 2011 American Institute of Physics. [doi:10.1063/1.3576570]

Incoherent interlayer transport and angular-dependent magnetoresistance oscillations in layered metals

The effect of incoherent interlayer transport on the interlayer resistance of a layered metal is considered. We find that for both quasi-one-dimensional and quasi-two-dimensional Fermi liquids the angular dependence of the magnetoresistance is essentially the same for coherent and incoherent transport. Consequently, the existence of a three-dimensional Fermi surface is not necessary to explain the oscillations in the magnetoresistance that are seen in many organic conductors as the field direction is varied. [S0031-9007(98)07660-1].

Comparison of coherent and weakly incoherent transport models for the interlayer magnetoresistance of layered Fermi liquids

The interlayer magnetoresistance of layered metals in a tilted magnetic field is calculated for two distinct models for the interlayer transport. The first model involves coherent interlayer transport, and makes use of results of semiclassical or Bloch-Boltzmann transport theory. The second model involves weakly incoherent interlayer transport where the electron is scattered many times within a layer before tunneling into the next layer. The results are relevant to the interpretation of experiments on angular-dependent magnetoresistance oscillations (AMRO) in quasi-one- and quasi-two-dimensional organic metals. We find that the dependence of the magnetoresistance on the direction of the magnetic field is identical for both models except when the field is almost parallel to the layers. An important implication of this result is that a three-dimensional Fermi surface is not necessary for the observation of the Yamaji and Danner oscillations seen in quasi-two- and quasi-one-dimensional metals, respectively. A universal expression is given for the dependence of the resistance at AMRO maxima and minima on the magnetic field and scattering time (and thus the temperature). We point out three distinctive features of coherent interlayer transport: (i) a beat frequency in the magnetic oscillations of quasi-two-dimensional systems, (ii) a peak in the angular-dependent magnetoresistance when the field is sufficiently large and parallel to the layers, and (iii) a crossover from a linear to a quadratic field dependence for the magnetoresistance when the field is parallel to the layers. Properties (i) and (ii) are compared with published experimental data for a range of quasi-two-dimensional organic metals. [S0163-1829(99)02236-5].

Epitaxial growth and properties of AlGaN-based UV-LEDs on Si(111) substrates

Magdeburg, Univ., Fak. für Naturwiss., Diss., 2010

Assessment of Asphalt Interlayer Designed on Jointed Concrete, InTrans Project 13-475, 2014

Reflective cracking in hot mix asphalt (HMA) overlays has been a common cause of poor pavement performance in Iowa for many years. Reflective cracks commonly occur in HMA overlays when deteriorated portland cement concrete is paved over with HMA. This results in HMA pavement surfaces with poor ride quality and increased transportation maintenance costs. To delay the formation of cracks in HMA overlays, the Iowa Department of Transportation (Iowa DOT) has begun to implement a crack-relief interlayer mix design specification. The crack-relief interlayer is an asphalt-rich, highly flexible HMA that can resist cracking in high strain loading conditions. In this project, the field performance of an HMA overlay using a one inch interlayer was compared to a conventional HMA overlay without an interlayer. Both test sections were constructed on US 169 in Adel, Iowa as part of an Iowa DOT overlay project. The laboratory performance of the interlayer mix design was assessed for resistance to cracking from repeated strains by using the four-point bending beam apparatus. An HMA using a highly polymer modified binder was designed and shown to meet the laboratory performance test criteria. The field performance of the overlay with the interlayer exceeded the performance of the conventional overlay that did not have the interlayer. After one winter season, 29 percent less reflective cracking was measured in the pavement section with the interlayer than the pavement section without the interlayer. The level of cracking severity was also reduced by using the interlayer in the overlay.

MOCVD growth andproperties of GaN and AlGaN layers

In this work GaN and AlGaN layers were grown by metal-organic chemical vapor deposition (MOCVD) on sapphire substrates. The research was carried out at Micro and Nanoscience Laboratory of Helsinki University of Technology. The objective of this thesis is the study of MOCVD technique for the growth of GaN and AlGaN films and optimization of growth parameters in purpose to improve crystal quality of the films. The widely used two-step and the new multistep methods have been used for GaN, AlGaN MOCVD growth on c-plane sapphire. Properties of the GaN and AlGaN layers were studied using in-situ reflectance monitoring during MOCVD growth, atomic force microscopy and x-ray diffraction. Compared to the two step method, the multistep method has produced even better qualities of the GaN and AlGaN layers and significant reduction of threading dislocation density.

GaN- ja AlGaN-puolijohteiden pintaominaisuuksista ja niiden muokkauksesta

Yhdistepuolijohde galliumnitridi (GaN) on energiatehokkaiden valkoisten ledien päämateriaali. GaN on kestävä materiaali; sillä on muun muassa alhainen säteilyreagointi ja suuri jännitekestävyys, minkä vuoksi GaN soveltuu hyvin myös maanpuolustus- ja avaruussovelluksiin. Sen iso energia-aukko mahdollistaa materiaalin käytön suurteho- ja suurtaajuussovelluksissa, ja sen suuri lämpökapasiteetti ja lämmönjohtavuuskyky avaavat edelleen uusia mahdollisuuksia materiaalin käytölle muun muassa tehovahvistimissa mikroaaltotaajuudella. GaN:ä käytetään myös sinisten ja violettien ledien valmistuksessa. Kun yhdisteeseen lisätään alumiinia, saadaan alumiinigalliumnitridin (AlGaN) energia-aukkoa ja muita ominaisuuksia säädeltyä alumiinin määrää muuttamalla. AlGaN-pintojen ominaisuuksia on tutkittu suhteellisen vähän, vaikka niiden merkitys kasvaa jatkuvasti kehitettäessä nanoteknologian sovelluksia. AlGaN-pintojen tutkiminen on tärkeää, koska monissa sovelluksissa juuri pinnat ja rajapinnat ovat huomattavassa asemassa laitteiden toiminnan kannalta. Pinnoilla sijaitseva atomien epäjärjestys, kidevirheet ja epäpuhtausatomit sekä atomien kemiallinen sidosympäristö kiinnostavat tutkijoita. Myös erilaisten pintakäsittelyjen vaikutusten tunteminen edellä mainittuihin ominaisuuksiin on tärkeää hyvien pintojen valmistuksen saavuttamiseksi. Tämän pro gradu -tutkielman on tarkoitus tutustua III–V-puolijohteiden GaN:n ja AlGaN:n pintaominaisuuksiin ja niiden muokkaukseen materiaalifysiikan pintatieteen menetelmillä. Mg-piristeisille Al0,5Ga0,5N-näytteille tehdyt LEED- ja STM-mittaukset osoittavat, että AlGaN-pinnat tarjoavat hyvän lähtökohdan bulkille tyypillisten ominaisuuksien tutkimiseen. XPS- ja SR-PES-mittaukset osoittavat, että Mg-piristys vaikuttaa aktivoituvan noin 700 °C:n lämmityksessä, ja näytteet sisältävät aiemmissa tutkimuksissa havaitun vedyn lisäksi happea ja hiiltä, jotka vaikuttavat magnesiumin aktivoitumiseen ja siitä syntyvään aukkokonsentraatioon. LEED-, STM- ja resistiivisyysmittaukset tukevat tehtyjä XPS- ja SR-PES-mittauksia. Al0,5Ga0,5N-näytteen energia-aukossa sijaitsevien aktiivisten vastaanottajatilojen määritettiin sijaitsevan 200–600 meV valenssivyön maksimin yläpuolella riippuen jälkilämmityksen kestosta.

Calculation of the magnetic field penetration depth for high-Tc cuprate superconductors based on the Interlayer Pair Tunneling model /

In this work, the magnetic field penetration depth for high-Tc cuprate superconductors is calculated using a recent Interlayer Pair Tunneling (ILPT) model proposed by Chakravarty, Sudb0, Anderson, and Strong [1] to explain high temperature superconductivity. This model involves a "hopping" of Cooper pairs between layers of the unit cell which acts to amplify the pairing mechanism within the planes themselves. Recent work has shown that this model can account reasonably well for the isotope effect and the dependence of Tc on nonmagnetic in-plane impurities [2] , as well as the Knight shift curves [3] and the presence of a magnetic peak in the neutron scattering intensity [4]. In the latter case, Yin et al. emphasize that the pair tunneling must be the dominant pairing mechanism in the high-Tc cuprates in order to capture the features found in experiments. The goal of this work is to determine whether or not the ILPT model can account for the experimental observations of the magnetic field penetration depth in YBa2Cu307_a7. Calculations are performed in the weak and strong coupling limits, and the efi"ects of both small and large strengths of interlayer pair tunneling are investigated. Furthermore, as a follow up to the penetration depth calculations, both the neutron scattering intensity and the Knight shift are calculated within the ILPT formalism. The aim is to determine if the ILPT model can yield results consistent with experiments performed for these properties. The results for all three thermodynamic properties considered are not consistent with the notion that the interlayer pair tunneling must be the dominate pairing mechanism in these high-Tc cuprate superconductors. Instead, it is found that reasonable agreement with experiments is obtained for small strengths of pair tunneling, and that large pair tunneling yields results which do not resemble those of the experiments.

Large-Size AlGaN/GaN HEMT Large-Signal Electrothermal Characterization and Modeling for Wireless Digital Communications

The rapid growth in high data rate communication systems has introduced new high spectral efficient modulation techniques and standards such as LTE-A (long term evolution-advanced) for 4G (4th generation) systems. These techniques have provided a broader bandwidth but introduced high peak-to-average power ratio (PAR) problem at the high power amplifier (HPA) level of the communication system base transceiver station (BTS). To avoid spectral spreading due to high PAR, stringent requirement on linearity is needed which brings the HPA to operate at large back-off power at the expense of power efficiency. Consequently, high power devices are fundamental in HPAs for high linearity and efficiency. Recent development in wide bandgap power devices, in particular AlGaN/GaN HEMT, has offered higher power level with superior linearity-efficiency trade-off in microwaves communication. For cost-effective HPA design to production cycle, rigorous computer aided design (CAD) AlGaN/GaN HEMT models are essential to reflect real response with increasing power level and channel temperature. Therefore, large-size AlGaN/GaN HEMT large-signal electrothermal modeling procedure is proposed. The HEMT structure analysis, characterization, data processing, model extraction and model implementation phases have been covered in this thesis including trapping and self-heating dispersion accounting for nonlinear drain current collapse. The small-signal model is extracted using the 22-element modeling procedure developed in our department. The intrinsic large-signal model is deeply investigated in conjunction with linearity prediction. The accuracy of the nonlinear drain current has been enhanced through several issues such as trapping and self-heating characterization. Also, the HEMT structure thermal profile has been investigated and corresponding thermal resistance has been extracted through thermal simulation and chuck-controlled temperature pulsed I(V) and static DC measurements. Higher-order equivalent thermal model is extracted and implemented in the HEMT large-signal model to accurately estimate instantaneous channel temperature. Moreover, trapping and self-heating transients has been characterized through transient measurements. The obtained time constants are represented by equivalent sub-circuits and integrated in the nonlinear drain current implementation to account for complex communication signals dynamic prediction. The obtained verification of this table-based large-size large-signal electrothermal model implementation has illustrated high accuracy in terms of output power, gain, efficiency and nonlinearity prediction with respect to standard large-signal test signals.

Influence of interlayer tunneling on the quantized Hall phases in intentionally disordered multilayer structures

Stability of the quantized Hall phases is studied in weakly coupled multilayers as a function of the interlayer correlations controlled by the interlayer tunneling and by the random variation of the well thicknesses. A strong enough interlayer disorder destroys the symmetry responsible for the quantization of the Hall conductivity, resulting in the breakdown of the quantum Hall effect. A clear difference between the dimensionalities of the metallic and insulating quantum Hall phases is demonstrated. The sharpness of the quantized Hall steps obtained in the coupled multilayers with different degrees of randomization was found consistent with the calculated interlayer tunneling energies. The observed width of the transition between the quantized Hall states in random multilayers is explained in terms of the local fluctuations of the electron density.

Effect of electroless nickel interlayer on the fatigue strength of chromium electroplated AISI 4340 steel

Deposition of wear-resistant hard chromium plating leads to a decrease in the fatigue strength of the base material. Despite the effective protection against wear and corrosion, fatigue life and environmental requirements result in pressure to identify alternatives or to improve conventional chromium electroplating mechanical characteristics. An interesting, environmentally safer and cleaner alternative for the replacement of hard chronic plating is tungsten carbide thermal spray coating, applied by high velocity oxyfuel (HVOF) process.To improve the fatigue strength of aeronautical steel chromium electroplated, shot peening is a successfully used method. Multiple lacer systems of coatings are considered to have larger resistance to crack propagation in comparison with simple layer.The aim of this study was to analyze the effect of nickel underplate on the fatigue strength of hard chromium plated AISI 4340 steel in two mechanical conditions: HRc 39 and HRc 52.Rotating bending fatigue tests results indicate that the clectroless nickel plating underlayer is responsible for the increase in fatigue strength of AISI 4340 steel chromium electroplated. This behavior may be attributed to the largest toughness/ductility and compressive residual stresses which, probably, arrested or delayed the inicrocrack propagation from the hard chromium external layer. The compressive residual stress field (CRSF) induced by the electroplating process was determined by X-ray diffraction method. The evolution of fatigue strength compressive residual stress field CRSF and crack sources are discussed and analyzed by SEM. (c) 2006 Elsevier Ltd. All rights reserved.

Optical characterization of cubic AlGaN/GaN quantum wells

Cubic phase group III-nitrides were grown using RF plasma assisted Molecular Beam Epitaxy on GaAs (001) substrates. High-resolution X-ray diffraction, photoluminescence, cathodoluminescence and photoreflectance measurements were employed to characterize the structural and optical properties of GaN/AlxGa1-xN Multi Quantum Well (MQW) structures, in which both Aluminum content and well widths were varied. The observed quantized states are in agreement with first-principles based theoretical calculations.

Evaluation of an electroless nickel interlayer on the fatigue & corrosion strength of chromium-plated AISI 4340 steel

Despite the fact that chromium electrodeposition results in protection against wear and corrosion, combined with chemical resistance and good lubricity, the reduction in fatigue strength of base metal and environmental requirements causes one to search for possible alternatives. To improve the fatigue and corrosion resistance of AISI 4340 steel, an experimental study has been made for an intermediate electroless nickel layer deposited on base metal. The objective of this study was to analyze the effect of nickel underplate on the fatigue and corrosion strength of hard-chromium-plated AISI 4340 steel. Deposition of the conventional wear-resistant hard chromium plating leads to a decrease in mechanical properties of the base metal, especially the fatigue strength. Rotating bending fatigue tests results indicate better performance for conventional hard chromium plating. Good corrosion resistance in salt fog exposure was obtained for the accelerated hard chromium plating. Experimental data showed higher fatigue and corrosion resistance for samples prepared with accelerated hard chromium plate over electroless nickel plate, when compared with samples without electroless nickel underplate.

Analysis of curaua/glass hybrid interlayer laminates

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)