Disorder effects produced by the Mn and H incorporations on the optical absorption edge of Ga1-xMnxAs:H nanocrystalline films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

The optical absorption edge of nanocrystalline Ga(1-x)Mn(x)N films deposited by reactive sputtering

We have focused on the optical absorption edge of nanocrystalline Ga(1-x)Mn(x)N (0.00 <= x <= 0.18) films deposited by reactive RF magnetron sputtering. The films obtained are nanocrystalline with grain sizes of about 25 nm, having wurtzite structure and strong orientation texture in the c-axis direction. The optical characterizations of the absorption edges were obtained in the 190-2600 nm spectral range. The increase of the Mn content causes an increase of the absorption coefficient which can be clearly noticed at low energies, and a quasi-linear decrease of the optical gap. Broad absorption bands observed around similar to 1.3 and similar to 2.2 eV were associated with transitions between the Mn acceptor level and the valence and conduction bands, respectively. The observed changes in the optical properties due to the Mn incorporation observed in these nanocrystalline films are similar to those reported for ferromagnetic GaMnN single-crystal films.

Structural study of thin films prepared from tungstate glass matrix by Raman and X-ray absorption spectroscopy

Thin films were prepared using glass precursors obtained in the ternary system NaPO(3)-BaF(2)-WO(3) and the binary system NaPO(3)-WO(3) with high concentrations of WO(3) (above 40% molar). Vitreous samples have been used as a target to prepare thin films. Such films were deposited using the electron beam evaporation method onto soda-lime glass substrates. Several structural characterizations were performed by Raman spectroscopy and X-ray Absorption Near Edge Spectroscopy (XANES) at the tungsten L(I) and L(III) absorption edges. XANES investigations showed that tungsten atoms are only sixfold coordinated (octahedral WO(6)) and that these films are free of tungstate tetrahedral units (WO(4)). In addition, Raman spectroscopy allowed identifying a break in the linear phosphate chains as the amount of WO(3) increases and the formation of P-O-W bonds in the films network indicating the intermediary behavior of WO(6) octahedra in the film network. Based on XANES data, we suggested a new attribution of several Raman absorption bands which allowed identifying the presence of W-O and W=O terminal bonds and a progressive apparition of W-O-W bridging bonds for the most WO(3) concentrated samples (above 40% molar) attributed to the formation of WO(6) clusters. (C) 2008 Elsevier B.V. All rights reserved.

Structural study of tungstate fluorophosphate glasses by Raman and X-ray absorption spectroscopy

Transparent glasses were synthesized in the NaPO3-BaF2 WO3 tertiary system and several structural characterizations were performed by X-ray absorption spectroscopy (XANES) at the tungsten L-I and L-III absorption edges and by Raman spectroscopy. Special attention was paid to the coordination state of tungsten atoms in the vitreous network.XANES investigations showed that tungsten atoms are only six-fold coordinated (octahedra WO6) and that these glasses are free of tungstate tetrahedra (WO4).In addition, Raman spectroscopy allowed to identify a break in the linear phosphate chains as the amount of WO3 increases and the formation of P-O-W bonds in the vitreous network indicating the modifier behavior of WO6 octahedra in the glass network. Based on XANES data, we suggested a new attribution of several Raman absorption bands which allowed to identify the presence of W-O- and W=O terminal bonds and a progressive apparition of W-O-W bridging bonds for the most WO3 concentrated samples (&GE; 30% molar) due to the formation of WO6 clusters. © 2004 Elsevier B.V. All rights reserved.

EPR, optical absorption and luminescence studies of Cr3+-doped antimony phosphate glasses

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Magnetic resonant x-ray diffraction study of europium telluride

Here we use magnetic resonant x-ray diffraction to study the magnetic order in a 1.5 mu m EuTe film grown on (111) BaF(2) by molecular-beam epitaxy. At Eu L(II) and L(III) absorption edges, a resonant enhancement of more than two orders was observed for the sigma ->pi(') diffracted intensity at half-order reciprocal-lattice points, consistent with the magnetic character of the scattering. We studied the evolution of the (1/21/21/2) magnetic reflection with temperature. When heating toward the Neel temperature (T(N)), the integrated intensity decreased monotonously and showed no hysteresis upon cooling again, indicating a second-order phase transition. A power-law fit to the magnetization versus temperature curve yielded T(N)=9.99(1) K and a critical exponent beta=0.36(1), which agrees with the renormalization theory results for three-dimensional Heisenberg magnets. The fits to the sublattice magnetization dependence with temperature, disregarding and considering fourth-order exchange interactions, evidenced the importance of the latter for a correct description of magnetism in EuTe. A value of 0.009 was found for the (2j(1)+j(2))/J(2) ratio between the Heisenberg J(2) and fourth-order j(1,2) exchange constants. The magnetization curve exhibited a round-shaped region just near T(N) accompanied by an increase in the magnetic peak width, which was attributed to critical scattering above T(N). The comparison of the intensity ratio between the (1/21/21/2) and the (1/21/21/2) magnetic reflections proved that the Eu(2+) spins align within the (111) planes, and the azimuthal dependence of the (1/21/21/2) magnetic peak is consistent with the model of equally populated S domains.

Using gold nanoparticles in protein crystallography: studies in crystal growth and derivatization

Dissertation for the Master Degree in Structural and Functional Biochemistry

Effect of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering

We have utilized infra-red and optical absorption measurements, grazing incidence X-ray diffraction (GIXRD) and extended X-ray absorption fine structure (EXAFS) measurements to investigate the influence of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering. Hydrogenation induces distinct changes in the optical properties, namely shifts in the absorption edges and reduction of the Urbach energy. Such modifications are correlated to a reduction in structural disorder as determined by EXAFS and the increase of crystallinity determined by GIXRD. (c) 2005 Elsevier B.V. All rights reserved.

Photochromic properties of tungstate-based glasses

Vitreous samples were prepared in the NaPO(3)-BaF(2)WO(3) ternary system with high WO(3) concentrations. These glasses exhibit a strong absorption in the visible due to the presence of reduced tungsten species and the use of oxidizing species is required. The couple Sb(2)O(3)/NaNO(3) was introduced in the composition and allowed to obtain transparent glasses. These oxidized samples were illuminated by visible laser radiation and showed an efficient volumetric photochromic effect. The photosensitive effect appeared as a dark spot throughout the entire volume of the glasses. The effect was investigated by several techniques such as, U-V-visible absorption, Raman and XANES at the L(1) and L(3) tungsten absorption edges. The results suggest a photoreduction of tungsten atoms without structural changes of the viteous network. Finally, the photochromic effect can be erased by thermal treatment at 200 degrees C for a few minutes. (C) 2007 Published by Elsevier B.V.

Nanocrystalline GaN and GaN:H films grown by RF-magnetron sputtering

The structural and optical properties of nanocrystalline GaN and GaN:H films grown by RF-tnagnetron sputtering are focused here. The films were grown using a Ga target and a variety of deposition parameters (N 2/H 2/Arflow rates, RF power, and substrate temperatures). Si (100) and fused silica substrates were used at relatively low temperatures (T s ≤ 420K). The main effects resulting from the deposition parameters variations on the films properties were related to the presence of hydrogen in the plasma. The X-ray diffraction analysis indicates that the grain sizes (∼15nm) and the crystallized volume fraction significantly decrease when hydrogen is present in the plasma. The optical absorption experiments indicate that the hydrogenated films have absorption edges very similar to that of GaN single crystal films reported in the literature, while the non-hydrogenated samples present larger absorption tails encroaching into the gap energies.

Estudo do potencial de associações de ZnO com os produtos naturais ácido cafeico e ferúlico como filtros solares híbridos: [recurso eletrônico]

In this work were studied associations of ZnO with the natural products caffeic and feluric acids. Two preparation methods were used, that is, the sol-gel and a reflux procedure. In the sol-gel method, ZnO is produced by the basics hydrolysis of precursors in the presence of the organic filters (caffeic and feluric acids), which results in 30 nm (or less) ZnO particles with the organic filters (in dissociated form) bonded to the surface of ZnO. In the reflux method, a dispersion of ZnO in a water/ethanol mixture was kept under reflux (50oC/4h) in the presence of the organic acids. The ZnO particles used in the reflux method have a higher diameter than sol-gel ZnO particles, but the prepared associated product ZnO/Organic acids were similar. Despite of the difference in relation to crystallinity between the products, the preparation methods resulted in analogous associations with respect to the interaction of the organic filters with the ZnO surface. The caffeic/ZnO associations presented low photostability, which lead to the degradation of the organic filter. The other associations (feluric acid/ZnO) presented satisfactory results. The FT-IR spectroscopy confirmed the formation of the association, and the nature of the bond formed compared with the Zn-O bond in Zn2+/Felutic acid complexes. The isolated organic and inorganic filters, along with the associations were analyzed by diffuse reflectance spectroscopy and Uv-vis spectroscopy. The absorption edges and the critical wavelengths were analyzed and the effects of Zn-O bonds in feluric acid/ZnO associations described as a function of the relative position of the π/π* system of the organic filter. Finally the performance of the hybrid filters were investigated in terms of the absorption of UVA and UVB radiations, with the UVA/UVB ratio, an efficiency parameter largely used in the description of solar filters, sunscreen and suncare products

Modeling the crystallographic structure of Ho(Ni,Co,Mn)O3±δ perovskite-type manganite

Crystallographic and microstructural properties of Ho(Ni,Co,Mn)O3± perovskite-type multiferroic material are reported. Samples were synthesized with a modified polymeric precursor method. The synchrotron X-ray powder diffraction (SXRPD) technique associated to Rietveld refinement method was used to perform structural characterization. The crystallographic structures, as well as microstructural properties, were studied to determine unit cell parameters and volume, angles and atomic positions, crystallite size and strain. X-ray energies below the absorption edges of the transition metals helped to determine the mean preferred atomic occupancy for the substituent atoms. Furthermore, analyzing the degree of distortion of the polyhedra centered at the transitions metal atoms led to understanding the structural model of the synthesized phase. X-ray photoelectron spectroscopy (XPS) was performed to evaluate the valence states of the elements, and the tolerance factor and oxygen content. The obtained results indicated a small decrease distortion in structure, close to the HoMnO3 basis compound. In addition, the substituent atoms showed the same distribution and, on average, preferentially occupied the center of the unit cell.

Ein neuartiges Interferometer zur Messung magneto-optischer Effekte an L-Absorptionskanten von ferromagnetischen Metallen mit linearpolarisierter Undulatorstrahlung

Am Mainzer Mikrotron MAMI wurde ein neuartiges Interferometer entwickelt und getestet, mit dem magneto-optische Effekte an dünnen, freitragenden Folien von 3d-Übergangsmetallen wie Eisen, Kobalt oder Nickel an den L_{2,3}-Absorptionskanten (im Spektralbereich der weichen Röntgenstrahlung) gemessen werden können. Es handelt sich um eine Weiterentwicklung eines an MAMI erprobten Interferometers, das im wesentlichen aus einer kollinearen Anordnung zweier identischer Undulatoren, zwischen die die dünne Probefolie eingebracht wird, und einem Gitterspektrometer besteht. Aus den als Funktion des Abstands der Undulatoren beobachtbaren Intensitätsoszillation lassen sich das Dekrement des Realteils δ und der Absorptionskoeffizient β des komplexen Brechungsindex bestimmen.rnIm Rahmen der vorliegenden Arbeit wurde die Apparatur derart weiterentwickelt, dass auch die magnetisch zirkulare Doppelbrechung Δδ und der magnetisch zirkulare Dichroismus Δβ an den L_{2,3}-Absorptionskanten von Übergangsmetallen gemessen werden können. Der zweite Undulator wurde um die Elektronenstrahlachse um den Winkel Ψ = ±107° drehbar gemacht. Damit dient er auch als Analysator der aus der Folie austretenden elliptisch polarisierten weichen Röntgenstrahlung, für die - wie bei der Faraday-Rotation - die Polarisationsebene gedreht ist. Weiterhin kann die Spaltbreite der 10-poligen Hybrid-Undulatoren mit einer Periodenlänge von 12 mm und damit der Undulatorparameter über eine Antriebsmechanik kontinuierlich variiert werden, wodurch eine optimale Anpassung der Amplituden der Undulatorstrahlung aus den beiden Undulatoren möglich wird. Der maximale Undulatorparameter beträgt K = 1.1. Auch das Spektrometer, das auf einem selbstfokussierenden Gitter mit variierter Liniendichte (im Mittel 1400 Linien / mm) basiert, wurde weiterentwickelt. Als Detektor kommt jetzt eine fensterlose CCD mit 1024 x 1024 Pixeln und einer Pixelgröße von 13 μm x 13 μm zum Einsatz, die im Bildmodus betrieben wird, was die gleichzeitige Messung eines Energieintervalls von ca. 50 eV ermöglicht. Die totale Linienbreite wurde bei einer vertikalen Strahlfleckausdehnung von σ_y = 70 μm (rms) am Neon 1s-3p Übergang bei (867.18 ±0.02) eV zu Δħω = (0.218 ±0.002) eV (FWHM) gemessen. Das hohe Auflösungsvermögen von 4000 und die Möglichkeit der Eichung gegen den 1s-3p Übergang von Neon wurden ausgenutzt, um die Energie der Maxima an den Absorptionskanten von Nickel (weiße Linien) neu zu bestimmen. Die Ergebnisse E_{L_2}=(869.65_{-0.16}^{+0.27}) eV und E_{L_3}=(852.37_{-0.11}^{+0.16}) eV stellen eine Verbesserung früherer Messungen dar, die große Streuungen aufwiesen.rnAus systematischen Messungen als Funktion des Abstandes der Undulatoren und des Drehwinkels Ψ wurden die magnetisch zirkulare Doppelbrechung Δδ im Energiebereich 834 eV ≤ ħω ≤ 885 eV an einer freitragenden, bis zur Sättigung magnetisierten Nickelfolie der Dicke von (96.4 ±2.7) nm gemessen. Sowohl das Auflösungsvermögen als auch die Genauigkeit der Messungen für Δδ übersteigen bekannte Literaturangaben signifikant, so dass eine bisher nicht bekannte Feinstruktur gefunden werden konnte. Außerdem wurde der Betrag des magnetisch zirkularen Dichroismus |Δβ| im Bereich des Maximums an der L_3-Absorptionskante mit hoher Genauigkeit gemessen.rn

Fotodiodos basados en (Zn,Mg)O para la detección de luz ultravioleta

La presente tesis fue ideada con el objetivo principal de fabricar y caracterizar fotodiodos Schottky en capas de ZnMgO y en estructuras de pozo cuántico ZnMgO/ZnO para la detección de luz UV. La elección de este material semiconductor vino motivada por la posibilidad que ofrece de detectar y procesar señales simultáneamente, en un amplio margen de longitudes de onda, al igual que su más directo competidor el GaN. En esta memoria se da en primer lugar una visión general de las propiedades estructurales y ópticas del ZnO, prestando especial atención a su ternario ZnMgO y a las estructuras de pozo cuántico ZnMgO/ZnO. Además, se han desarrollado los conocimientos teóricos necesarios para una mejor compresión y discusión de los resultados alcanzados. En lo que respecta a los resultados de esta memoria, en esencia, estos se dividen en dos bloques. Fotodiodos desarrollados sobre capas delgadas de ZnMgO no-polar, y sobre estructuras de pozo cuántico de ZnMgO/ZnO no-polares y semipolares Fotodiodos de capas delgadas de ZnMgO. Es bien conocido que la adición de Mg a la estructura cristalina del ZnO desplaza el borde de absorción hacia energías mayores en el UV. Se ha aprovechado esto para fabricar fotodiodos Schottky sobre capas de ZnMgO crecidas por MOCVD y MBE, los cuales detecten en un ventana de energías comprendida entre 3.3 a 4.6 eV. Sobre las capas de ZnMgO, con diferentes contenidos de Mg(5.6-18.0 %), crecidas por MOCVD se han fabricado fotodiodos Schottky. Se han estudiado en detalle las curvas corrientevoltaje (I-V). Seguidamente, se ha realizado un análisis de la respuesta espectral bajo polarización inversa. Tanto los valores de responsividad obtenidos como el contraste UV/VIS están claramente aumentados por la presencia de ganancia. Paralelamente, se han realizado medidas de espectroscopia de niveles profundos (DLOS), identificándose la presencia de dos niveles profundos de carácter aceptor. El papel desempeñado por estos en la ganancia ha sido analizado meticulosamente. Se ha demostrado que cuando estos son fotoionizados son responsables directos del gran aumento de la corriente túnel que se produce a través de la barrera Schottky, dando lugar a la presencia de la ganancia observada, que además resulta ser función del flujo de fotones incidente. Para extender el rango detección hasta 4.6 eV se fabricaron fotodiodos sobre capas de ZnMgO de altísima calidad cristalina crecidas por MBE. Sobre estos se ha realizado un riguroso análisis de las curvas I-V y de las curvas capacidad-voltaje (CV), para posteriormente identificar los niveles profundos presentes en el material, mediante la técnica de DLOS. Así mismo se ha medido la respuesta espectral de los fotodetectores, la cual muestra un corte abrupto y un altísimo contraste UV/VIS. Además, se ha demostrado como estos son perfectos candidatos para la detección de luz en la región ciega al Sol. Por otra parte, se han fabricado fotodiodos MSM sobre estas mismas capas. Se han estudiado las principales figuras de mérito de estos, observándose unas corrientes bajas de oscuridad, un contraste UV/VIS de 103, y la presencia de fotocorriente persistente. Fotodiodos Schottky de pozos cuánticos de ZnO/ZnMgO. En el segundo bloque de esta memoria, con el objeto final de clarificar el impacto que tiene el tratamiento del H2O2 sobre las características optoelectrónicas de los dispositivos, se ha realizado un estudio detallado, en el que se han analizado por separado fotodiodos tratados y no tratados con H2O2, fabricados sobre pozos cuánticos de ZnMgO/ZnO. Se ha estudiado la respuesta espectral en ambos casos, observándose la presencia de ganancia en los dos. A través de un análisis meticuloso de las características electrónicas y optoeletrónicas de los fotodiodos, se han identificado dos mecanismos de ganancia internos diferentes en función de que la muestra sea tratada o no-tratada. Se han estudiado fotodetectores sensibles a la polarización de la luz (PSPDs) usando estructuras de pozo cuántico no-polares y semipolares sobre sustratos de zafiro y sustratos de ZnO. En lo que respecta a los PSPDs sobre zafiro, en los cuales el pozo presenta una tensión acumulada en el plano, se ha visto que el borde de absorción se desplaza _E _21 meV con respecto a luz linealmente polarizada perpendicular y paralela al eje-c, midiéndose un contraste (RE || c /RE c)max _ 6. Con respecto a los PSPDs crecidos sobre ZnO, los cuales tienen el pozo relajado, se ha obtenido un 4E _30-40, y 21 meV para las heteroestructuras no-polar y semipolar, respectivamente. Además el máximo contraste de responsividad fue de (RE || c /RE c)max _ 6 . Esta sensibilidad a la polarización de la luz ha sido explicada en términos de las transiciones excitónicas entre la banda de conducción y las tres bandas de valencia. ABSTRACT The main goal of the present thesis is the fabrication and characterization of Schottky photodiodes based on ZnMgO layers and ZnMgO / ZnO quantum wells (QWs) for the UV detection. The decision of choosing this semiconductor was mainly motivated by the possibility it offers of detecting and processing signals simultaneously in a wide range of wavelengths like its main competitor GaN. A general overview about the structural and optical properties of ZnO, ZnMgO layers and ZnMgO/ZnO QWs is given in the first part of this thesis. Besides, it is shown the necessary theoretical knowledge for a better understanding of the discussion presented here. The results of this thesis may be divided in two parts. On the one hand, the first part is based on studying non-polar ZnMgO photodiodes. On the other hand, the second part is focused on the characterization of non-polar and semipolar ZnMgO / ZnO QWs Schottky photodiodes. ZnMgO photodiodes. It is well known that the addition of Mg in the crystal structure of ZnO results in a strong blue-shift of the ZnO band-gap. Taking into account this fact Schottky photodiodes were fabricated on ZnMgO layers grown by MOCVD and MBE. Concerning ZnMgO layers grown by MOCVD, a series of Schottky photodiodes were fabricated, by varying the Mg content from 5.6% to 18 %. Firstly, it has been studied in detail the current-voltage curves. Subsequently, spectral response was analyzed at reverse bias voltage. Both the rejection ratio and the responsivity are shown to be largely enhanced by the presence of an internal gain mechanism. Simultaneously, measurements of deep level optical spectroscopy were carried out, identifying the presence of two acceptor-like deep levels. The role played for these in the gain observed was studied in detail. It has been demonstrated that when these are photoionized cause a large increase in the tunnel current through the Schottky barrier, yielding internal gains that are a function of the incident photon flux. In order to extend the detection range up to 4.6 eV, photodiodes ZnMgO grown by MBE were fabricated. An exhaustive analysis of the both I-V and CV characteristics was performed. Once again, deep levels were identified by using the technique DLOS. Furthermore, the spectral response was measured, observing sharp absorption edges and high UV/VIS rejections ratio. The results obtained have confirmed these photodiodes are excellent candidates for the light detection in the solar-blind region. In addition, MSM photodiodes have also been fabricated on the same layers. The main figures of merit have been studied, showing low dark currents, a large UV/VIS rejection ratio and persistent photocurrent. ZnMgO/ZnO QWs photodiodes. The second part was focused on ZnMgO/ ZnO QWs. In order to clarify the impact of the H2O2 treatment on the performance of the Schottky diodes, a comparative study using treated and untreated ZnMgO/ZnO photodiodes has been carried out. The spectral response in both cases has shown the presence of gain, under reverse bias. Finally, by means of the analysis of electronic and optoelectronic characteristics, two different internal gain mechanisms have been indentified in treated and non-treated material. Light polarization-sensitive UV photodetectors (PSPDs) using non-polar and semipolar ZnMgO/ZnO multiple quantum wells grown both on sapphire and ZnO substrates have been demonstrated. For the PSPDs grown on sapphire with anisotropic biaxial in-plain strain, the responsivity absorption edge shifts by _E _21 meV between light polarized perpendicular and parallel to the c-axis, and the maximum responsivity contrast is (RE || c /RE c)max _ 6 . For the PSPDs grown on ZnO, with strain-free quantum wells, 4E _30-40, and 21 meV for non-polar and semipolar heterostructures, and maximum (R /R||)max _10. for non-polar heterostructure was achieved. These light polarization sensitivities have been explained in terms of the excitonic transitions between the conduction and the three valence bands.

Synthesis of novel and stable g-C3N4/N-doped SrTiO3 hybrid nanocomposites with improved photocurrent and photocatalytic activity under visible light irradiation

Hybrid nanocomposites based on N-doped SrTiO3 nanoparticles wrapped in g-C3N4 nanosheets were successfully prepared by a facile and reproducible polymeric citrate and thermal exfoliation method. The results clearly indicated that the N-doped SrTiO3 nanoparticles are successfully wrapped in layers of the g-C3N4 nanosheets. The g-C3N4/N-doped SrTiO3 nanocomposites showed absorption edges at longer wavelengths compared with the pure g-C3N4 as well as N-doped SrTiO3. The hybrid nanocomposites exhibit an improved photocurrent response and photocatalytic activity under visible light irradiation. Interestingly, the hybrid nanocomposite possesses high photostability and reusability. Based on experimental results, the possible mechanism for prolonged lifetime of the photoinduced charge carrier was also discussed. The high performance of the g-C3N4/N-doped SrTiO3 photocatalysts is due to the synergic effect at the interface of g-C3N4 and N-doped SrTiO3 hetero/nanojunction including the high separation efficiency of the charge carrier, band energy matching and the suppressed recombination rate. Therefore, the hybrid photocatalyst could be of potential interest for water splitting and environmental remediation under natural sunlight.