Effects of superimposed pulse bias on TiN coating in cathodic arc deposition

Orthogonal designs are used to investigate the main factors when doing experiments in which pulse bias is superimposed on d.c. bias during cathodic are deposition of TiN. Pulse peak, duty cycle, frequency, direct voltage, are current and pressure all are investigated when coating TiN on HSS substrates. Roughness, surface micrograph, microhardness and thickness are tested. By analysis of variance, it is shown that pressure and frequency are the main factors. R-a and droplet density of the film with (d.c. + pulse) bias decrease. A simple explanation for the result is suggested.

Preparation of tetrahedral amorphous carbon films by filtered cathodic vacuum arc deposition

Tetrahedrally bonded amorphous carbon (ta-C) and nitrogen doped (ta-C:N) films were obtained at room temperature in a filtered cathodic vacuum arc (FCVA) system incorporating an off-plane double bend (S-bend) magnetic filter. The influence of the negative bias voltage applied to substrates (from -20 to -350 V) and the nitrogen background pressure (up to 10-3 Torr) on film properties was studied by scanning electron microscopy (SEM), electron energy loss spectroscopy (EELS), Raman spectroscopy, X-ray photoemission spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and X-ray reflectivity (XRR). The ta-C films showed sp3 fractions between 84% and 88%, and mass densities around 3.2 g/cm3 in the wide range of bias voltage studied. In contrast, the compressive stress showed a maximum value of 11 GPa for bias voltages around -90 V, whereas for lower and higher bias voltages the stress decreased to 6 GPa. As for the ta-C:N films grown at bias voltages below -200 V and with N contents up to 7%, it has been found that the N atoms were preferentially sp3 bonded to the carbon network with a reduction in stress below 8 GPa. Further increase in bias voltage or N content increased the sp2 fraction, leading to a reduction in film density to 2.7 g/cm3.

Properties of tetrahedral amorphous carbon prepared by vacuum arc deposition

The structural, optical, electrical and physical properties of amorphous carbon deposited from the filtered plasma stream of a vacuum arc were investigated. The structure was determined by electron diffraction, neutron diffraction and energy loss spectroscopy and the tetrahedral coordination of the material was confirmed. The measurements gave a nearest neighbour distance of 1.53 Å, a bond angle of 110 and a coordination number of four. A model is proposed in which the compressive stress generated in the film by energetic ion impact produces pressure and temperature conditions lying well inside the region of the carbon phase diagram within which diamond is stable. The model is confirmed by measurements of stress and plasmon energy as a function of ion energy. The model also predicts the formation of sp2-rich materials on the surface owing to stress relaxation and this is confirmed by a study of the surface plasmon energy. Some nuclear magnetic resonance, infrared and optical properties are reported and the behaviour of diodes using tetrahedral amorphous carbon is discussed. © 1991.

Characterisation of Ni–Ti thin films produced by filtered arc deposition

Ti–49.5 at%Ni thin films have been formed by deposition onto Si and glass substrates using a filtered arc deposition system (FADS). The films deposited on glass were composed of nanocrystalline parent phase grains contained within an amorphous matrix. The films deposited onto silicon were crystalline, and were largely parent phase whereas a bulk alloy of the same composition would be expected to be martensite. The stabilisation of the parent phase is proposed to be a grain size effect, with the critical grain size for parent phase stabilisation being about 30 nm.

In situ synthesis of TiC-Fe composite overlays from low cost TiO 2 precursors using plasma transferred Arc deposition

A direct conversion of TiO2 into TiC during plasma transferred arc deposition is a cheap and novel approach to produce wear resistant coatings. The present study explored the use of a low cost titanium ore as precursor for titanium carbide in metal matrix composite overlays. The deposited layers were characterized using optical microscopy, scanning electron microscopy, x-ray diffraction and microhardness testing. A carbothermic reduction of the titanium oxides took place during the deposition of the coating by plasma transferred arc. The overlays produced in this way consisted of fine titanium carbides evenly dispersed in an iron matrix. The opportunities and limitations of this approach are discussed.

Surface structure of SnOxNy thin films deposited using a filtered cathodic arc for novel energy storage systems

Tin oxide/nitride (SnOxNy) thin films were synthesised using a filtered cathodic vacuum arc deposition system. These films were deposited at room temperature with increasing amounts of reactive nitrogen gas to alter the nanostructure. To understand the surface structure of the coatings several techniques were used including scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD) and x-ray absorption spectroscopy (XAS). Preliminary results have shown that a cathodic arc can be used to deposit smooth films which exhibit a mixed tin oxide/nitride structure.

Multilayered graphene films prepared at moderate temperatures using energetic physical vapour deposition

Carbon films were energetically deposited onto copper and nickel foil using a filtered cathodic vacuum arc deposition system. Raman spectroscopy, scanning electron microscopy, transmission electron microscopy and UV–visible spectroscopy showed that graphene films of uniform thickness with up to 10 layers can be deposited onto copper foil at moderate temperatures of 750 C. The resulting films, which can be prepared at high deposition rates, were comparable to graphene films grown at 1050 C using chemical vapour deposition (CVD). This difference in growth temperature is attributed to dynamic annealing which occurs as the film grows from the energetic carbon flux. In the case of nickel substrates, it was found that graphene films can also be prepared at moderate substrate temperatures. However much higher carbon doses were required, indicating that the growth mode differs between substrates as observed in CVD grown graphene. The films deposited onto nickel were also highly non uniform in thickness, indicating that the grain structure of the nickel substrate influenced the growth of graphene layers. 

电弧离子镀中脉冲偏压对TiN,CrN薄膜性能的影响

在电弧离子镀技术中使用脉冲偏压电源是近年来发展起来的一项新技术。研究表明，在薄膜沉积过程中，以直流偏压为基础，迭加一个高脉冲电压，有助于改善薄膜的性能，并且能够在较低的沉积温度下获得结合力较强、内应力较小、表面光洁度也比较好的薄膜。通过正交设计和方差分析，本文首次研究了在电弧离子镀技术中使用脉冲偏压电源， 在高速钢和不锈钢基体上沉积TiN和CrN的过程中，对薄膜的表面粗糙度、表面形貌、结合力、显微硬度、沉积速率等性能的影响，发现：（1） 在考虑气氛、弧电流和脉冲电源的各种参数的情况下，气氛和频率是影响薄膜性能的主要因素；（2）在气氛、弧电流不变的条件下，脉冲电源的频率和占空比是影响薄膜粗糙度的主要因素；（3）在比较了直流偏压和脉冲偏压的实验结果之后，认为利用直流迭加脉冲的偏压方式，经过优化参数，能够比较显著地 降低薄膜的表面粗糙度，提高沉积速率。

The microstructure and properties of energetically deposited carbon nitride films

The intrinsic stress, film density and nitrogen content of carbon nitride (CNx) films deposited from a filtered cathodic vacuum arc were determined as a function of substrate bias, substrate temperature and nitrogen process pressure. Contour plots of the measurements show the deposition conditions required to produce the main structural forms of CNx including N-doped tetrahedral amorphous carbon (ta-C:N) and a variety of nitrogen containing graphitic carbons. The film with maximum nitrogen content (~ 30%) was deposited at room temperature with 1.0 mTorr N2 pressure and using an intermediate bias of - 400 V. Higher nitrogen pressure, higher bias and/or higher temperature promoted layering with substitutional nitrogen bonded into graphite-like sheets. As the deposition temperature exceeded 500 °C, the nitrogen content diminished regardless of nitrogen pressure, showing the meta-stability of the carbon-nitrogen bonding in the films. Hardness and ductility measurements revealed a diverse range of mechanical properties in the films, varying from hard ta-C:N (~ 50 GPa) to softer and highly ductile CN x which contained tangled graphite-like sheets. Through-film current-voltage characteristics showed that the conductance of the carbon nitride films increased with nitrogen content and substrate bias, consistent with the transition to more graphite-like films. © 2014 Elsevier B.V.

Interface tailoring for adhesion enhancement of diamond-like carbon thin films

We have explored the suitability and characteristics of interface tailoring as a tool for enhancing the adhesion of hydrogen-free diamond-like carbon (DLC) thin films to silicon substrates. DLC films were deposited on silicon with and without application of an initial high energy carbon ion bombardment phase that formed a broad Si-C interface of gradually changing Si:C composition. The interface depth profile was calculated using the TRIDYN simulation program, revealing a gradient of carbon concentration including a region with the stoichiometry of silicon carbide. DLC films on silicon, with and without interface tailoring, were characterized using Raman spectroscopy, scanning electron microscopy, atomic force microscopy and scratch tests. The Raman spectroscopy results indicated sp3-type carbon bonding content of up to 80%. Formation of a broadened Si:C interface as formed here significantly enhances the adhesion of DLC films to the underlying silicon substrate. (C) 2012 Elsevier B.V. All rights reserved.