6 resultados para 103298
Resumo:
A novel InGaAs(LT-In0.25 Ga0.75 As) absorber grown by metal organic chemical vapor deposition at low temperature is presented.Using it as well as an output coupler,passive mode locking,which produces pulses as short as several hundred picoseconds for diode-end-pumped Nd∶YAG laser at 1.06μm,is realized.The pulse frequency is 150MHz.
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Resumen tomado de la publicaci??n
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Pós-graduação em Agronomia (Horticultura) - FCA
Improving Agriculture Students' Understanding of Global Production Systems Through Distance Learning