北京地区植被景观的空间分布特征

本文利用地理信息系统(GIS)技术、景观生态学理论和方法、分形理论以及统计分析方法对北京地区植被景观的空间分布特征进行了分析，并对景观格局和景观多样性的分析方法进行了探讨，结果表明： (1)对几乎所有的斑块类型，其斑块大小的分布都不是对称的，而是右偏的。4种概率分布（Г—分布、对数正态分布、Weibull分布和（负）指数分布）都只能刻划部分斑块类型，并且服从对数正态分布的斑块类型最多，服从（负）指数分布的斑块类型最少。 (2)随着斑块面积的增加，边界效应越来越小，而斑块形状越来越不紧凑。 (3)分形分析识别出本地区植被景观中的两个尺度域：一个是斑块面积小于(大约)2.7km2，另一个是斑块面积大于(大约)2.7km2。两个域中的斑块复杂程度有很大差异，后一个域中的斑块明显比前一个域中的斑块复杂，并且随着斑块面积的增加，斑块形状越来越复杂。 (4)用斑块数作为多度指标时，该景观的斑块类型一多度分布服从（截断）对数正态分布和（截断）负二项分布，不服从对数级数分布和几何分布。用斑块面积作为多度指标时，该景观的斑块类型一多度分布服从对数正态分布、Weibull分布和Г—争布，不服从正态分布。从而该景观的斑块类型一多度分布不是对称的，也是右偏的。在4个优势度／多样性模型中，“生态位优先占领”模型和Zipf-Mandelbrot模型可以较好地刻划该景观的斑块类型一多度关系。 (5)样本大小对多样性测度有直接的影响。如果这种影响比较小，就说明测度指标比较稳定。三个丰富度指数中，Ri比R2和R3更稳定;五个多样性性指数中，D和Di最稳定，OD最不稳定，因此，OD是用于景观多样性监测的理想指标;五个均匀度指数中，Jgi最稳定。根据设计的3种计算临界样方数量（即多样性测度指标达到稳定时的样方数量）方法的计算结果，上述几个最稳定的测度指标在通常情况下只需要几个样方(即总抽样面积为数百km2)就达到稳定状态。 (6)斑块类型数目随面积的增加而增加。根据四个评价指标的评价结果，认为双曲线对该景观的斑块类型一面积关系的拟合效果最好。 (7)样本较大（对于一阶刀切估计，大于30个样方;对于二阶刀切估计，大于60个样方）时，刀切法能够给出斑块类型数目(NPT)较好的估计;样本较小（小于30个样方）时，Mingoti和Meeden提出的经验贝叶斯方法能够对NPT给出比刀切法和自助法更好的估计。斑块类型一面积曲线外推虽然也能给出NPT较好的估计，但这种方法需要慎重使用，不能外推得很远。 (8)列联表分析表明，该植被景观中的斑块类型与土壤类型、岩石类型、海拔高度和坡向各因子之间均存在显著的相关性。植被景观多样性与岩石类型多样性和地形多样性之间也均呈显著的正相关关系，即植被景观多样性随岩石类型多样性和地形多样性的增加而增加。但植被景观多样性与土壤类型多样性之间不存在显著的线性相关或秩相关关系，这可能是由于二者的分类体系不吻合。植被景观多样性与总的道路密度和第二类道路密度之间均呈显著的负相关关系，而与第一类和第三类道路密度之间的关系都不显著。这反映出景观样本单元(10kmxlOkm)的尺度对应于第二类道路的影响尺度。而道路密度在一定程度上反映了人类活动的强度，因此，在10kmxlOkm这个尺度上，人类活动愈剧烈，景观多样性就愈小。

内蒙古锡林河流域湿地植被研究及道路对该区草地退化的影响

通过群落生态学和景观生态学方法，结合GIS、RS技术对锡林河流域湿地植被进行了研究。结果表明：流域湿地面积为301.62km2，占流域面积的3%左右。尽管面积相对较小，但是物种丰富，群落结构多样。植被调查数据显示基本确定的植被型4个，植被亚型6个，群系组16个，群系68个，区系成分以泛北极种为主，占69%，相对简单;按照水分生态型划分，中生物种占最多，为44.32％;按生活型分以多年生草本为主占50％以上;科属分布相对复杂，隶属39个科，其中禾本科和菊科是最大的两个科，所占比例仅有17.30％和12.43％，其他科没有明显的优势性，充分说明湿地优越的生境可以满足多种植物共同生长。 多度分布是研究物种多样性分布的重要组分，同时反映了群落结构的特性。以常用的Lognormal、Logseries和Weibull、Exp、Power模型来拟和6个典型草甸群落和踏头草甸群落的物种多度分布，分log-相对多度-物种级数和物种-游程两种形式进行比较;同时，对于典型草甸群落和踏头群落区分常见种、偶然种等进行细化，深入分析群落多度的变化。结果表明，5个模型对于log-相对多度-物种级数在整个群落水平上均不能很好的拟和，50%以上的点都落在95%置信区间以外;但是对常见种和偶然种的拟和情况要好，Weibull、Power和Logseris模型分别对典型草甸群落常见种、偶然种和中间种能很好的拟和，而Logseries和Power模型对于踏头群落的常见种和偶然种拟和较好。5个模型都能较好的拟和物种-游程分布，其中K—S检验结果表明：Lognormal模型对于无脉苔草、针苔草和荸荠这类相对湿润环境下的典型草甸群落拟和较好，对于长叶火绒草和密花风毛菊群落Weibull拟和最好，Power 模型拟和箭叶橐吾最好，踏头草甸拟和最好的是Logseries模型，踏头间拟合最好的是Exp模型。不同的拟和模型应用于不同的群落类型，可以看出湿地群落的复杂性和生境的多样性。区分常见种和偶然种的拟合结果表明典型群落和踏头群落表现一致，即Lognormal模型对所有种拟和是最好的，而Power模型对偶然种的拟和是最好的，同时，Lognormal对典型草甸群落的中间种拟和也是最好。从中可以看出典型草甸群落和踏头群落尽管在表现形式上不同，但是群落的内部仍存在相似的联系，可能跟相似物种的作用有关。 根据湿地表观类型、植被水分状态和航片判别能力，结合实地调查，采用监督分类的方法将锡林河流域的湿地划分为低湿地草甸、盐化草甸和沼泽三种类型。自1984年以来20多年的时间中，锡林河流域的湿地发生了巨大的变化。尽管总的面积没有太大变化，但是湿地类型发生转化。中上游的低湿地草甸面积减少8.94％，沼泽面积减少30.82％，同时，盐化草甸的面积增加了15.98％。增加的盐化草甸主要是另外两种湿地类型转化而成的，中游水库截流，加速中下游草甸的盐化是锡林河流域湿地变化的主要原因。利用GIS技术依据探讨不同湿地的空间变化，分析沙化对湿地变化的影响，结果表明：沙化只对少数湿地有影响，发育良好的湿地即使处在相对强烈的沙化环境下，仍能保持不变。接着，分析了人类直接干扰对湿地变化的影响，缓冲区居民点分析结果表明：近20年来，位于湿地周边的居民点分布格局发生显著的变化。1980年代，居民点分布在盐化草甸周边的最多，到2004年，居民点在沼泽草甸分布数量为最多，该类湿地水、草和资源最为丰富，人类直接的干扰最大，进而转化成另外两类，减少面积最大。低湿地草甸是物种丰富，结构复杂的一种湿地，抗干扰能力强，恢复能力也强，因此相对的变化面积较小。以锡林浩特市水库上下游的湿地植被物种和群落结构的变化，证明了水量减少是湿地数量、结构改变的直接影响因子。

Fracture of brittle lattice materials: A review

The mechanics of failure for elastic-brittle lattice materials is reviewed. Closed-form expressions are summarized for fracture toughness as a function of relative density for a wide range of periodic lattices. A variety of theoretical and numerical approaches has been developed in the literature and in the main the predictions coincide for any given topology. However, there are discrepancies and the underlying reasons for these are highlighted. The role of imperfections at the cell wall level can be accounted for by Weibull analysis. Nevertheless, defects can also arise on the meso-scale in the form of misplaced joints, wavy cell walls and randomly distributed missing cell walls. These degrade the macroscopic fracture toughness of the lattice. © 2010 Springer Science+Business Media B.V.

Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long Si3N4 and SiO2/Si3N4 Diaphragms

The bulge test is successfully extended to the determination of the fracture properties of silicon nitride and oxide thin films. This is achieved by using long diaphragms made of silicon nitride single layers and oxide/nitride bilayers, and applying comprehensive mechanical model that describes the mechanical response of the diaphragms under uniform differential pressure. The model is valid for thin films with arbitrary z-dependent plane-strain modulus and prestress, where z denotes the coordinate perpendicular to the diaphragm. It takes into account the bending rigidity and stretching stiffness of the layered materials and the compliance of the supporting edges. This enables the accurate computation of the load-deflection response and stress distribution throughout the composite diaphragm as a function of the load, in particular at the critical pressure leading to the fracture of the diaphragms. The method is applied to diaphragms made of single layers of 300-nm-thick silicon nitride deposited by low-pressure chemical vapor deposition and composite diaphragms of silicon nitride grown on top of thermal silicon oxide films produced by wet thermal oxidation at 950 degrees C and 1050 degrees C with target thicknesses of 500, 750, and 1000 mn. All films characterized have an amorphous structure. Plane-strain moduli E-ps and prestress levels sigma(0) of 304.8 +/- 12.2 GPa and 1132.3 +/- 34.4 MPa, respectively, are extracted for Si3N4, whereas E-ps = 49.1 +/- 7.4 GPa and sigma(0) = -258.6 +/- 23.1 MPa are obtained for SiO2 films. The fracture data are analyzed using the standardized form of the Weibull distribution. The Si3N4 films present relatively high values of maximum stress at fracture and Weibull moduli, i.e., sigma(max) = 7.89 +/- 0.23 GPa and m = 50.0 +/- 3.6, respectively, when compared to the thermal oxides (sigma(max) = 0.89 +/- 0.07 GPa and m = 12.1 +/- 0.5 for 507-nm-thick 950 degrees C layers). A marginal decrease of sigma(max) with thickness is observed for SiO2, with no significant differences between the films grown at 950 degrees C and 1050 degrees C. Weibull moduli of oxide thin films are found to lie between 4.5 +/- 1.2 and 19.8 +/- 4.2, depending on the oxidation temperature and film thickness.

Fracture properties of silicon carbide thin films by bulge test of long rectangular membrane

This paper reports the mechanical properties and fracture behavior of silicon carbide (3C-SiC) thin films grown on silicon substrates. Using bulge testing combined with a refined load-deflection model of long rectangular membranes, which takes into account the bending stiffness and prestress of the membrane material, the Young's modulus, prestress, and fracture strength for the 3C-SiC thin films with thicknesses of 0.40 and 1.42 mu m were extracted. The stress distribution in the membranes under a load was calculated analytically. The prestresses for the two films were 322 +/- 47 and 201 +/- 34 MPa, respectively. The thinner 3C-SiC film with a strong (111) orientation has a plane-gstrain moduli of 415 +/- 61 GPa, whereas the thicker film with a mixture of both (111) and (110) orientations exhibited a plane-strain moduli of 329 +/- 49 GPa. The corresponding fracture strengths for the two kinds of SiC films were 6.49 +/- 0.88 and 3.16 +/- 0.38 GPa, respectively. The reference stresses were computed by integrating the local stress of the membrane at the fracture over edge, surface, and volume of the specimens and were fitted with Weibull distribution function. For the 0.40-mu m-thick membranes, the surface integration has a better agreement between the data and the model, implying that the surface flaws are the dominant fracture origin. For the 1.42-mu m-thick membranes, the surface integration presented only a slightly better fitting quality than the other two, and therefore, it is difficult to rule out unambiguously the effects of the volume and edge flaws.

Bulge testing and fracture properties of plasma-enhanced chemical vapor deposited silicon nitride thin films

The mechanical properties and fracture behavior of silicon nitride (SiNx) thin film fabricated by plasma-enhanced chemical vapor deposition is reported. Plane-strain moduli, prestresses, and fracture strengths of silicon nitride thin film; deposited both oil a bare Si substrate and oil a thermally oxidized Si substrate were extracted using bulge testing combined with a refined load-deflection model of long rectangular membranes. The plane-strain modu i and prestresses of SiNx thin films have little dependence on the substrates, that is, for the bare Si substrate, they are 133 +/- 19 GPa and 178 +/- 22 MPa, respectively, while for the thermally oxidized substrate, they are 140 +/- 26 Gila and 194 +/- 34 MPa, respectively. However, the fracture strength values of SiNx films grown on the two substrates are quite different, i.e., 1.53 +/- 0.33 Gila and 3.08 +/- 0.79 GPa for the bare Si substrate a A the oxidized Si substrate, respectively. The reference stresses were computed by integrating the local stress of the membrane at the fracture over the edge, Surface, and volume of the specimens and fitted with the Weibull distribution function. For SiNx thin film produced oil the bare Si Substrate, the Volume integration gave a significantly better agreement between data and model, implying that the volume flaws re the dominant fracture origin. For SiNx thin film grown on the oxidized Si substrate, the fit quality of surface and edge integration was significantly better than the Volume integration, and the dominant surface and edge flaws could be caused by buffered HF attacking the SiNx layer during SiO2 removal. Crown Copyright (C) 2008 Published by Elsevier B.V. All rights reserved.

Fracture properties of PECVD silicon nitride thin films by long rectangular memrane bulge test

Bulge test combined with a refined load-deflection model for long rectangular membrane was applied to determine the mechanical and fracture properties of PECVD silicon nitride (SiNx) thin films. Plane-strain modulus E-ps prestress s(0), and fracture strength s(max) of SiNx thin films deposited both on bare Si substrate and on SiO2-topped Si substrate were extracted. The SiNx thin films on different substrates possess similar values of E-ps and s(0) but quite different values of s(max). The statistical analysis of fracture strengths were performed by Weibull distribution function and the fracture origins were further predicted.

Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes

The mechanical properties and fracture behavior of silicon carbide (3C-SiC) thin films grown on silicon substrates were characterized using bulge testing combined with a refined load-deflection model for long rectangular membranes. Plane-strain modulus E-ps, prestress so, and fracture strength s(max) for 3C-SiC thin films with thickness of 0.40 mu m and 1.42 mu m were extracted. The E, values of SiC are strongly dependent on grain orientation. The thicker SIC film presents lower so than the thinner film due to stress relaxation. The s(max) values decrease with increasing film thickness. The statistical analysis of the fracture strength data were achieved by Weibull distribution function and the fracture origins were predicted.

Relationship between load/unload response ratio and damage variable and its application

The physics-based parameter: load/unload response ratio (LURR) was proposed to measure the proximity of a strong earthquake, which achieved good results in earthquake prediction. As LURR can be used to describe the damage degree of the focal media qualitatively, there must be a relationship between LURR and damage variable (D) which describes damaged materials quantitatively in damage mechanics. Hence, based on damage mechanics and LURR theory, taking Weibull distribution as the probability distribution function, the relationship between LURR and D is set up and analyzed. This relationship directs LURR applied in damage analysis of materials quantitatively from being qualitative earlier, which not only provides the LURR method with a more solid basis in physics, but may also give a new approach to the damage evaluation of big scale structures and prediction of engineering catastrophic failure. Copyright (c) 2009 John Wiley & Sons, Ltd.

Relationship between load/unload response ratio and damage variable and its application

The physics-based parameter: load/unload response ratio (LURR) was proposed to measure the proximity of a strong earthquake, which achieved good results in earthquake prediction. As LURR can be used to describe the damage degree of the focal media qualitatively, there must be a relationship between LURR and damage variable (D) which describes damaged materials quantitatively in damage mechanics. Hence, based on damage mechanics and LURR theory, taking Weibull distribution as the probability distribution function, the relationship between LURR and D is set up and analyzed. This relationship directs LURR applied in damage analysis of materials quantitatively from being qualitative earlier, which not only provides the LURR method with a more solid basis in physics, but may also give a new approach to the damage evaluation of big scale structures and prediction of engineering catastrophic failure. Copyright (c) 2009 John Wiley & Sons, Ltd.

利用HIRFL加速的重离子获得半导体器件的σ-LET曲线

表征器件单粒子敏感度的σ-LET 曲线是轨道翻转率预估的重要依据.利用兰州重离子加速器（HIRFL）加速的 35 MeV/u的36Ar离子和 15.14 MeV/u的136Xe离子得到的 32 kbit×8静态存储器（SRAM）IDT71256单粒子翻转的实验数据,用Weibull和Lognormal两种函数拟合获得了完整的σ-LET 曲线,对两种拟合结果的差别进行了讨论,并在拟合参数的基础上估算了地球同步轨道和两条太阳同步轨道辐射环境中IDT71256的翻转率.

不同起源沙地樟子松林结构与生长比较研究(英文)

樟子松已成为三北沙区防护林主要乔木造林树种,但是,最早于20世纪50年代在科尔沁沙地引种的沙地樟子松却出现了生长衰退、枯梢直至死亡的现象,而天然状态的樟子松在该阶段却正处于旺盛生长期。为了比较沙地人工樟子松林与天然林的林分结构、生长特点及所处立地的生态因子的异同,对辽宁省彰武县章古台(最早引种沙地樟子松区)和内蒙古自治区红花尔基(天然樟子松分布区)的樟子松林进行了综合调查。结果表明,Weibull分布函数可较好地模拟人工林树木直径分布,正态分布函数可用于模拟天然林树木直径分布。基于树干解析的树木生长模型(Chapman-Richards)分析,人工林胸径、树高与材积的相对生长率与平均生长率的最大值比天然林分别提早11、22年,6、18年和35、59年。人工林材积的生长加速度高峰值出现在14年,而天然林则出现在33年;人工林的数量成熟龄为43年,天然林为102年;因此,可以推断天然林的寿命比人工林要长近60年。这一结果可以归纳为以下综合作用:1)两种起源地生态因子的巨大的差异,主要包括:人工林区的纬度、平均气温、降水量、蒸发量、海拨高度等较天然林区高;2)人工林的林分密度较天然林大;3)人工林区的干扰强度较天然林强。图4表6参23。

长白山阔叶红松林径级模拟研究——林分模拟

该文利用指数分布、Weibull分布和混合分布3种类型7个方程模拟长白山阔叶红松林径级分布.研究结果表明,长白山阔叶红松林的径级分布不是理想的倒“J”型,基本为“S”型;用3个负指数方程和修正指数方程模拟均为倒“J”型,在半对数图上为直线;Weibull方程模拟出了单峰,但是效果一般;用2个和3个组分的Weibull混合模型对长白山阔叶红松林径级分布进行了成功模拟,3个组分的Weibull混合模型的模拟效果有所提高,但是并没有显著改善.

土壤侵蚀的中子活化示踪法研究

利用中子活化示踪法研究坡面土壤的侵蚀过程 ,发现坡面的相对侵蚀量从坡脚到坡顶随坡长的变化符合 Weibull分布 ,其形状参数主要受降雨量、降雨历时和径流深度的影响 ,尺度参数主要与平均雨强、I3 0 相关。坡面在侵蚀的同时也发生沉积 ,一般来说短历时高强度的降雨沉积量较小 ,而长历时低强度的降雨沉积量较大 ,某一部位侵蚀产沙的沉积量与其距离之间有 y=axb的关系。坡面径流直接影响着坡面的输移比 ,当径流深和径流系数较高时 ,输移比接近于 1,否则输移比降低