Study of electrical properties of pulsed excimer laser deposited strontium titanate films

Polycrystalline SrTiO3 films were prepared by pulsed excimer laser ablation on Si and Pt coated Si substrates. Several growth parameters were varied including ablation fluence, pressure, and substrate temperature. The structural studies indicated the presence of [100] and [110] oriented growth after annealing by rapid thermal annealing at 600-degrees-C for 60 s. Deposition at either lower pressures or at higher energy densities encouraged film growth with slightly preferred orientation. The scanning electron microscopy studies showed the absence of any significant particulates on the film surface. Dielectric studies indicated a dielectric constant of 225, a capacitance density of 3.2 fF/mum2, and a charge density of 40 fC/mum for films of 1000 nm thick. The dc conductivity studies on these films suggested a bulk limited space charge conduction in the high field regime, while the low electric fields induced an ohmic conduction. Brief time dependent dielectric breakdown studies on these films, under a field of 250 kV/cm for 2 h, did not exhibit any breakdown, indicating good dielectric strength.

Impact of Template Layers on Dielectric and Electrical Properties of Pulsed-Laser Ablated Pb(Mg1/3 Nb2/3)O3 - PbTiO3 Thin Films

A study was done on pulsed laser deposited relaxor ferroelectric thin films of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) deposited on platinized silicon substrates with template layers to observe the influence of the template layers on physical and electrical properties. Initial results, showed that perovskite phase (80% by volume) was obtained through proper selection of the processing conditions on Pt/Ti/SiO2/Si substrates. The films were grown at 300°C and then annealed in a rapid thermal annealing furnace in the temperature range of 750-850°C to induce crystallization. Comparison of the films annealed at different temperatures revealed a change in crystallinity, perovskite phase formation and grain size. These results were further used to improve the quality of the perovskite PMN-PT phase by inserting thin layers of TiO2 on the Pt substrate. These resulted in an increase in perovskite phase in the films even at lower annealing temperatures. Dielectric studies on the PMN-PT films show very high values of dielectric constant (1300) at room temperature, which further improved with the insertion of the template seed layer. The relaxor properties of the PMN-PT were correlated with Vogel-Fulcher theory to determine the actual nature of the relaxation process.

Role of La0.5Sr0.5COO3 template layers on dielectric and electrical properties of pulsed-laser ablated Pb(Nb2/3Mg1/3)O-3-PbTiO3 thin films

Relaxor ferroelectric thin films of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (PMN-PT) deposited on platinized silicon substrates with and without template layers were studied. Perovskite phase (80% by volume) was obtained through proper selection of the processing conditions on bare Pt/Ti/SiO2/Si substrates. The films were initially grown at 300 degreesC using pulsed-laser ablation and subsequently annealed in a rapid thermal annealing furnace in the temperature range of 750-850 degreesC to induce crystallization. Comparison of microstructure of the films annealed at different temperatures showed change in perovskite phase formation and grain size etc. Results from compositional analysis of the films revealed that the films initially possessed high content of lead percentage, which subsequently decreased after annealing at temperature 750-850 degreesC. Films with highest perovskite content were found to form at 820-840 degreesC on Pt substrates where the Pb content was near stoichiometric. Further improvement in the formation of perovskite PMN-PT phase was obtained by using buffer layers of La0.5Sr0.5CoO3 (LSCO) on the Pt substrate. This resulted 100% perovskite phase formation in the films deposited at 650 degreesC. Dielectric studies on the PMN-PT films with LSCO template layers showed high values of relative dielectric constant (3800) with a loss factor (tan delta) of 0.035 at a frequency of 1 kHz at room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

Synthesis and luminescence properties of erbium silicate thin films

We have studied the structure and the room temperature luminescence of erbium silicate thin films deposited by rf magnetron sputtering. Films deposited on silicon oxide layers are characterized by good structural properties and excellent stability. The optical properties of these films are strongly improved by rapid thermal annealing processes performed in the range of temperature 800-1250 °C. In fact through the reduction of the defect density of the material, a very efficient room temperature photoluminescence at 1535 nm is obtained. We have also investigated the influence of the annealing ambient, by finding that treatments in O2 atmosphere are significantly more efficient in improving the optical properties of the material with respect to processes in N2. Upconversion effects become effective only when erbium silicate is excited with high pump powers. The evidence that all Er atoms (about 1022 cm-3) in erbium silicate films are optically active suggests interesting perspectives for optoelectronic applications of this material. © 2007 Elsevier B.V. All rights reserved.

The influence of substrate on the properties of Er2O3 films grown by magnetron sputtering

The structural properties and the room temperature luminescence of Er2O3 thin films deposited by RF magnetron sputtering have been studied. Films characterized by good morphological properties have been obtained by using a SiO2 interlayer between the film and the Si substrate. The evolution of the properties of the Er2O3 films due to rapid thermal annealing processes in O2 ambient performed at temperatures in the range 800-1200 °C has been investigated in details. The existence of well-defined annealing conditions (temperature of 1100 °C or higher) allowing to avoid the occurrence of extensive chemical reactions with the oxidized substrate has been demonstrated and an increase of the photoluminescence (PL) intensity by about a factor of 40 with respect to the as deposited material has been observed. The enhanced efficiency of the photon emission process has been correlated with the longer lifetime of the PL signal. The same annealing processes are less effective when Er2O3 is deposited on Si. In this latter case interfacial reactions and pit formation occur, leading to a material characterized by stronger non-radiative phenomena that limit the PL efficiency. © 2006 Elsevier B.V. All rights reserved.

Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition

Photoluminescence (PL) and lasing properties of InAs/GaAs quantum dots (QDs) with direrent growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the lowgrowth rate sample shows a greater blue shift of PL peak wave length. This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blue shift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers.

Structure and magnetic characteristics of nonpolar a-plane GaN : Mn films

Diluted magnetic nonpolar GaN:Mn films have been fabricated by implanting Mn ions into unintentionally doped nonpolar a-plane (1 1 (2) over bar 0) GaN films with a subsequent rapid thermal annealing (RTA) process. The structure, morphology and magnetic characteristics of the samples were investigated by means of high-resolution x-ray diffraction (XRD), atomic force microscopy (AFM) and a superconducting quantum interference device (SQUID), respectively. The XRD analysis shows that the RTA process can effectively recover the crystal deterioration caused by the implantation process and that there is no obvious change in the lattice parameter for the as-annealed sample. The SQUID result indicates that the as-annealed sample shows ferromagnetic properties and magnetic anisotropy at room temperature.

Neutron irradiation effect in two-dimensional electron gas of AlGaN/GaN heterostructures

AlGaN/GaN heterostructures have been irradiated by neutrons with different influences and characterized by means of temperature-dependent Hall measurements and Micro-Raman scattering techniques. It is found that the carrier mobility of two-dimensional electron gas (2DEG) is very sensitive to neutrons. At a low influence of 6.13 x 10(15) cm(-2), the carrier mobility drops sharply, while the sheet carrier density remains the same as that of an unirradiated sample. Moreover, even for a fluence of up to 3.66 x 10(16) cm(-2), the sheet carrier density shows only a slight drop. We attribute the degradation of the figure-of-merit (product of n(s) x mu) of 2DEG to the defects induced by neutron irradiation. Raman measurements show that neutron irradiation does not yield obvious change to the strain state of AlGaN/GaN heterostructures, which proves that degradation of sheet carrier density has no relation to strain relaxation in the present study. The increase of the product of n(s) x mu of 2DEG during rapid thermal annealing processes at relatively high temperature has been attributed to the activation of Ge-Ga transmuted from Ga and the recovery of displaced defects.

The structure, morphology and Raman scattering study on Mn-implanted nonpolar a-plane GaN films

Dilute magnetic nonpolar GaN films with a Curie temperature above room temperature have been fabricated by implanting Mn ions into unintentionally doped nonpolar a-plane (1 1 (2) over bar 0) GaN films and a subsequent rapid thermal annealing (RTA) process. The impact of the implantation and RTA on the structure and morphology of the nonpolar GaN films is studied in this paper. The scanning electron microscopy analysis shows that the RTA process can effectively recover the implantation-indUced damage to the surface morphology of the sample. The X-ray diffraction and micro-Raman scattering spectroscopy analyses show that the RTA process can just partially recover the implantation-induced crystal deterioration. Therefore, the quality of the Mn-implanted nonpolar GaN films should be improved further for the application in spintronic devices. (C) 2009 Elsevier B.V. All rights reserved.

Room-temperature ferromagnetism and in-plane magnetic anisotropy characteristics of nonpolar GaN:Mn films

Diluted magnetic nonpolar GaN Mn films have been fabricated by implanting Mn ions into nonpolar aplane (1 1 (2) over bar 0) p-type GaN films and a subsequent rapid thermal annealing process. The ferromagnetism properties of the films were studied by means of superconducting quantum interference device (SQUID). Clearly in-plane magnetic anisotropy characteristics of the sample at 10 K were revealed with the direction of the applied magnetic field rotating along the in-plane [0 0 0 1]-axis. Moreover, obvious ferromagnetic properties of the sample up to 350 K were detected by means of the temperature-dependent SQUID. (C) 2009 Elsevier B.V. All rights reserved.

Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method

We propose an innovative technique, making use of the In segregation effect, referred as the N irradiation method, to enhance In-N bonding and extend the emission wavelength of GaInNAs quantum wells (QWs). After the formation of a complete In floating layer, the growth is interrupted and N irradiation is initiated. The majority of N atoms are forced to bond with In atoms and their incorporation is regulated independently by the N exposure time and the As pressure. The effect of the N exposure time and As pressure on the N incorporation and the optical quality of GaInNAs QWs were investigated. Anomalous photoluminescence (PL) wavelength red shifts after rapid thermal annealing (RTA) were observed in the N-irradiated samples, whereas a normal GaInNAs sample revealed a blue shift. This method provides an alternative way to extend the emission wavelength of GaInNAs QWs with decent optical quality. We demonstrate light emission at 1546 nm from an 11-nm-thick QW, using this method and the PL intensity is similar to that of a 7-nm-thick GaInNAs QW grown at a reduced rate. (C) 2008 Elsevier B.V. All rights reserved.

Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers

In this work, InAs quantum dots (QDs) grown on a linear graded InGaAs metamorphic buffer layer by molecular beam epitaxy have been investigated. The growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (AFM). InAs QDs were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 mu m as measured by photoluminescence (PL). The effects of post-growth rapid thermal annealing (RTA) on the optical properties of the InAs QDs were investigated. After the RTA, the PL peak of the QDs was blue-shifted and the full width at half maximum decreased.

The structural, morphological and magnetic characteristics of Mn-implanted nonpolar a-plane GaN films

Dilute magnetic nonpolar GaN films have been fabricated by implanting Mn into unintentionally doped nonpolar a-plane GaN films at room temperature, and a subsequent rapid thermal annealing. The X-ray diffraction analysis shows that after rapid thermal annealing the peak of the GaN X-ray diffraction curve shifts to a lower angle, indicating a slight expansion of the GaN crystal lattice. Atomic force microscopy analysis shows that the annealing process does not change the morphology of the sample greatly. Magnetic property analysis indicates that the as-annealed sample shows obvious ferromagnetic properties. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates

The photoluminescence (PL) characteristics of GaAsSbN/GaAs epilayers grown by molecular beam epitaxy (MBE) are carefully investigated. The results show that antimony (Sb) incorporation into GaNAs material has less influence on the N-induced localization states. For the same N concentration, GaAsSbN material can reach an emission wavelength near 1.3 mum more easily than GaInNAs material. The rapid thermal annealing (RTA) experiment shows that the annealing induced rearrangement of atoms and related blueshift in GaAsSbN epilayers are smaller than those in GaNAs and GaInNAs epilayers. The GaAsSbN material can keep a longer emission wavelength near 1.3 mum-emission even after the annealing treatment. Raman spectroscopy analysis gives further insight into the structure stability of GaAsSbN material after annealing. (C) 2004 Elsevier Ltd. All rights reserved.

Effect of SiO2 encapsulation on the nitrogen reorganization in a GaNAs/GaAs single quantum well

Effects of SiO2 encapsulation and rapid thermal annealing on the optical properties of a GaNAs/GaAs single quantum well (SQW) are studied by low-temperature photoluminescence (LTPL). After annealing at 800degreesC for 30s, a blueshift of the LTPL peak energy for the SiO2-capped region is 25meV and that for the bare region is 0.8meV. The results can attribute to the nitrogen reorganization in the GaNAs/GaAs SQW. It is also shown that the nitrogen reorganization can be obviously enhanced by SiO2 cap-layer. A simple model is used to describe the SiO2-enhanced blueshift of the LTPL peak energy. The estimated activation energy of the N atomic reorganization for the samples annealing with and without SiO2 cap-layer are 2.9eV and 3.1eV, respectively.