X-ray spectra induced by slow highly charged Arq+ ions in collision with Nb surface

The X-ray spectra of Nb surface induced by Arq+ (q = 16,17) ions with the energy range from 10 to 20 keV/q were studied by the optical spectrum technology. The experimental results indicate that the multi-electron excitation occurred as a highly charged Ar16+ ion was neutralized below the metal surface. The K shell electron of Ar16+ was excited and then de-excited cascadly to emit K X-ray. The intensity of the X-ray emitted from K shell of the hollow Ar atom decreased with the increase of projectile kinetic energy. The intensity of the X-ray emitted from L shell of the target atom Nb increased with the increase of projectile kinetic energy. The X-ray yield of Ar17+ is three magnitude orders larger than that of Ar16+.

Slow highly charged ion O4+ induced electron emission from clean solid surfaces

The. total electron emission yields following the interaction of slow highly charged ions (SHCI) O4+ with different material surfaces (W, Au, Si and SiO2) have been measured. It is found that the electron emission yield gamma increases proportionally with the projectile velocity v ranging from 5.36 x 10(5)m/s to 10.7 x 10(5)m/s. The total emission yield is dependent on the target materials, and it turns out to follow the relationship gamma(Au) > gamma(Si)> gamma(W). The result shows that the electron emission yields are mainly determined by the electron stopping power of the target when the projectile potential energy is taken as a constant, which is in good agreement with the former studies

Slow isocharged sequence ions with helium collisions: Projectile core dependence

The collisions of the isocharged sequence ions of q=6 (C6+, N6+, O6+, F6+, Ne6+, Ar6+, and Ca6+), q=7 (F7+, Ne7+, S7+, Ar7+, and Ca7+), q=8 (F8+, Ne8+, Ar8+, and Ca8+), q=9 (F9+, Ne9+, Si9+, S9+, Ar9+, and Ca9+) and q=11 (Si11+, Ar11+, and Ca11+) with helium at the same velocities were investigated. The cross-section ratios of the double-electron transfer (DET) to the single-electron capture (SEC) sigma(DET)/sigma(SEC) and the true double-electron capture (TDC) to the double-electron transfer sigma(TDC)/sigma(DET) were measured. It shows that for different ions in an isocharged sequence, the experimental cross-section ratio sigma(DET)/sigma(SEC) varies by a factor of 3. The results confirm that the projectile core is another dominant factor besides the charge state and the collision velocity in slow (0.35-0.49v(0); v(0) denotes the Bohr velocity) highly charged ions (HCIs) with helium collisions. The experimental cross-section ratio sigma(DET)/sigma(SEC) is compared with the extended classical over-barrier model (ECBM) [A. Barany , Nucl. Instrum. Methods Phys. Res. B 9, 397 (1985)], the molecular Coulombic barrier model (MCBM) [A. Niehaus, J. Phys. B 19, 2925 (1986)], and the semiempirical scaling laws (SSL) [N. Selberg , Phys. Rev. A 54, 4127 (1996)]. It also shows that the projectile core properties affect the initial capture probabilities as well as the subsequent relaxation of the projectiles. The experimental cross-section ratio sigma(TDC)/sigma(DET) for those lower isocharged sequences is dramatically affected by the projectile core structure, while for those sufficiently highly isocharged sequences, the autoionization always dominates, hence the cross-section ratio sigma(TDC)/sigma(DET) is always small.

Slow highly charged ions induced electron emission from clean Si surfaces

The electron emission yields from the interaction of slow highly charged ions (SHCI) He2+, O2+ and Ne2+ with clean Si surface are measured separately. It is found that electron emission yield gamma increases proportionally to projectile kinetic energy E-p/M-p, ranging from 0.75 keV/u to 10.5 keV/u (i.e. 3.8 x 10(5) m/s <= v(p) <= 1.42 x 10(6) m/s), and it is higher for heavy ions (O2+ and Ne2+) than for light ion (He2+). For O2+ and Ne2+, gamma increases with Z(p) decreasing in our energy range, and it shows quite different from the result for higher projectile kinetic energy. After calculating the stopping power by using TRIM 2006, it is found that the fraction of secondary electrons induced by recoil atoms increases significantly at lower projectile energy, thereby leads to the differences in gamma for heavy ions O2+ and Ne2+ between lower and higher projectile kinetic energy.

反冲原子对低速离子轰击Si表面时电子发射产额的影响；Slow highly charged ions induced electron emission from clean Si surfaces

在兰州重离子加速器国家实验室电子回旋共振离子源高电荷态原子物理实验平台上,用低能(0.75keV/u≤EP/MP≤10.5keV/u,即3.8×105m/s≤vP≤1.42×106m/s)He2+,O2+和Ne2+离子束正入射到自清洁Si表面时二次电子发射产额的实验结果.结果表明电子发射产额γ近似正比于入射离子动能EP/MP.在相同动能下,γ(O)>γ(Ne)>γ(He),对于原子序数ZP比较大的O2+和Ne2+离子,ZP大者反而γ小,这与较高入射能量时的结果截然不同.通过计算不同入射能量下入射离子的阻止能损S,发现反冲原子对激发二次电子的作用随入射离子能量的降低显著增大,这正是导致在较低能量范围内二次电子发射产额与较高入射能量时存在差异的主要原因.

低速高电荷态重离子在C_(60)薄膜中引起的势效应研究；Studies of Slow Highly-charged Ion Irradiated C_(60) Films

为了研究低速高电荷态离子在C60薄膜中引起的势效应,用能量为200keV的高电荷态Xen+(n=3,10,13,15,17,20,22,23)离子辐照了C60薄膜。用原子力显微镜(AFM)和Raman散射技术分析了辐照过程中高电荷态Xen+离子所储存势能在C60薄膜中引起的效应,即势效应。AFM分析结果表明,辐照C60薄膜的表面粗糙度随辐照Xen+离子电荷态(即势能)的增加而减小,揭示了势效应的存在。而Raman分析结果表明,由于Xe离子的动能远大于其所储存的势能,因此,尽管有表面势效应的影响,但在Raman分析的深度范围内,弹性碰撞还是主导了C60薄膜的损伤过程。

X-ray photoelectron spectroscopy study on GaN crystal irradiated by slow highly charged ions

We utilize slow highly charged ions of Xeq+ and Pbq+ to irradiate GaN crystal films grown on sapphire substrate, and use X-ray photoelectron spectroscopy to analyze its surface chemical composition and chemical state of the elements. The results show that highly charged ions can etch the sample surface obviously, and the GaN sample irradiated by highly charged ions has N depletion or is Ga rich on its surface. Besides, the relative content of Ga-Ga bond increases as the dose and charge state of the incident ions increase. In addition, the binding energy of Ga 3d(5/2) electrons corresponding to Ga-Ga bond of the irradiated GaN sample is smaller compared with that of the Ga bulk material. This can be attributed to the lattice damage, which shifts the binding energy of inner orbital electrons to the lower end.

低速高电荷态重离子辐照的GaN晶体表面X射线光电子能谱研究；X-ray photoelectron spectroscopy study on GaN crystal irradiated by slow highly charged ions

利用低速高电荷态Xeq+和Pbq+离子对在蓝宝石衬底上生长的GaN晶体膜样品进行辐照,并利用X射线光电子能谱(XPS)对样品表面化学组成和元素化合态进行了分析.结果表明,高电荷态离子对样品表面有显著的刻蚀作用;经高电荷态离子辐照的GaN样品表面氮元素贫乏而镓元素富集;随着入射离子剂量和所携带电荷数的增大,Ga—Ga键相对含量增大;辐照后,GaN样品中Ga—Ga键对应的Ga3d5/2电子的束缚能偏小,晶格损伤使内层轨道电子束缚能向低端方向偏移.

低能He~(2+)入射He原子转移电离实验中出射电子成像研究；Momentum image of emission electrons in transfer ionization process of slow He~(2+) colliding on He

利用反应显微谱仪对70keV He2+-He转移电离过程中的出射电子进行了成像,研究了出射电子的空间速度分布特征.结果表明:电子主要集中在散射平面内;在散射平面内,电子速度分布介于零与入射离子速度Vp之间(即前向出射)且在散射离子和靶核核间轴处有一极小值,呈现出典型的双峰结构.出射电子的上述分布特征可由出射电子波函数σ振幅和π振幅的干涉进行定性解释,σ振幅和π振幅对出射电子波函数的贡献与碰撞参数相关.在小碰撞参数下,π振幅的贡献更加明显;而在大碰撞参数下,σ振幅的贡献更加显著.

Experimental investigation of transfer ionization mechanism in slow He2+ -He collisions

The processes of transfer ionization in He2+ -He collisions at energies ranging from 20 to 40 keV have been studied experimentally by means of cold target recoil ions momentum spectroscopy. From the longitudinal momentum spectra of recoil ions, different mechanisms of transfer ionization have been obtained. The results show that one of the electrons of helium atom being captured into the ground state of projectile ion He2+ and the other one emitted to the continuum state of projectile or target are the dominant mechanisms of transfer ionization. The autoionization cross section of projectile after two-electron capture into a double excited state is small. Transfer ionization for one target electron capture into ground state and the other one into the continuum of projectile mainly occurs at large impact parameter collisions.

低能He~(2+)-He碰撞体系转移电离机理的实验研究；Experimental investigation of transfer ionization mechanism in slow He~(2+)-He collisions

利用冷靶反冲离子动量谱仪,对低能He2+-He碰撞反应中产生的反冲靶离子和炮弹离子进行了符合测量,根据反冲靶离子的动量,研究了转移电离过程中的电荷转移机理.实验结果表明:在20—40keV能量范围内,靶原子上的一个电子俘获到炮弹离子的基态,另一个电子直接发射到靶的连续态的直接电离及另一个电子俘获到炮弹离子的连续态的过程(ECC)是最主要的转移电离机理,且ECC过程主要发生在大碰撞参数条件下;炮弹离子俘获两个电子处在双激发态的自电离过程的贡献很小.

Shell effect on stabilization processes following multi-electron transfer in slow Arq+-Ar (g=6-9, 11) collisions

We experimentally investigate the shell effect on the stabilization processes following the multi-electron transfer in slow collisions of Arq+-Ar (q = 6-9, It) The relative cross-section ratios of multi-electron transfer and of the subsequent stabilization with respect to single-electron capture are measured meanwhile compared with the theoretical results predicted by the classical over-barrier model. Our result indicates that the multi-electron transfer is dominant when the projectile charge is large and the subsequent stabilization shows a dramatic variation if the projectile L-shell configuration becomes open. It shows that the subsequent stabilization processes of multiply excited scattering ions have a strong dependence on the projectile shell. (C) 2010 Elsevier BV All rights reserved.

Influence of core property on multi-electron process in slow collisions of isocharged sequence ions with neon

Influence of core property on multi-electron process in the collisions of q = 6-9 and 11 isocharged sequence ions with Ne is investigated in the keV/u region The cross-section ratios of double-, triple-, quadruple- and total multi-electron processes to the single electron capture process as well as the partial ratios of different reaction channels to the relevant multi-electron process are measured by using position-sensitive and time-of-flight techniques The experimental data are compared with the theoretical predictions including the extended classical over-barrier model, the molecular Columbic barrier model and the semi-empirical scaling law Results show a core effect on multi-electron process of isocharge ions colliding with Neon, which is consistent with the results of Helium we obtained previously

Two Electron Transfer and Stabilization in Slow O6+ and Rare-Gas Collisions

The stabilization ratios.. for double-electron transfer, i.e., the cross section ratios of true double capture to total double-electron transfer, are measured in O6++ He, Ne and Ar collisions at 6 keV/u. A high.. value about 68% is obtained for the He target, while for the Ar target, the.. value is only 8%. The high R value for the He target is due to the significant direct population of the (2l, nl') configurations with high n For the Ar target, the (quasi) symmetric configurations (3l, nl') lead to the much lower.. value. Neglecting the core effects, the O6+ ion can be taken as a bare ion C6+ except the occupied 1s shell, and then the measured R values are compared with previous experimental results of C6+ projectile ions at similar impact velocity. It yields good agreement with the Ne and Ar target, while the occupied 1s shell for the O6++ He system results in a higher R value than that in C6++He collisions.