Preparation, characterization and gas sensing properties of high soluble metal (II) phthalocyanine thin films by spin-coating method

Three novel metal (II) phthalocyanine complexes were synthesized by cyclic tetramerisation reaction of a dicyano benzene component and different metal ions (Pd2+, Co2+, Zn2+). The structure of complexes was confirmed by elemental analysis, mass and IR spectrum. The excellent solubility of the complexes in benzene enabled us to obtain films by a spin-coating method. The films were characterized by IR, electronic spectral and AFM. The gas sensing properties to NO2 of the metal (II) phthalocyanine complex films were studied. In addition, the effects of different metal ions and the gas sensing temperature on the sensing properties were studied. (C) 2005 Elsevier B.V. All rights reserved.

Structure-change-dependent transmittance of PtOx thin film in super-resolution near-field structure: Diffraction effect analysis

To study working mechanism of super-resolution near-field structure (super-RENS) optical disk from a far-field optics view is very necessary because of the actual far-field writing/readout process in the optical disk system. A Gaussian diffraction model based on Fresnel-Kirchhoff diffraction theory of PtOx-type super-RENS has been set up in this Letter. The relationship between micro-structural deformation (change of bubble structure and refractive index profile) with far-field optical response of PtOx thin film has been studied with it in detail. The simulation results are in good agreement with the experimental results reported in literatures with a designed configuration. These results may provide more quantitative information for better understanding of the working mechanism of metal-oxide-type super-RENS. (c) 2007 Elsevier B.V. All rights reserved.

Spectroscopic, and thermal studies of some new binuclear transition metal(II) complexes with hydrazone ligands containing acetoacetanilide and isoxazole

A new chelating ligand, 2-(2-(5-tert-butylisoxazol-3-yl)hydrazono)-N-(2,4-dimethylphenyl)-3-oxobutanamide (HL), and its four binuclear transition metal complexes, M-2(L)(2) (mu-OCH3)(2) [M = Ni(II), Co(II), Cu(II), Zn(II)], were synthesized using the procedure of diazotization, coupling and metallization. Their structures were postulated based on elemental analysis, H-1 NMR, MALDI-MS, FT-IR spectra and UV-vis electronic absorption spectra. Smooth films of these complexes on K9 glass substrates were prepared using the spin-coating method and their absorption properties were evaluated. The thermal properties of the metal(II) complexes were investigated by thermogravimetry (TG) and differential scanning calorimetry (DSC. Different thermodynamic and kinetic parameters namely activation energy (E

Structure and properties of amorphous thin film for optical data storage

In this paper the magnetic and magneto-optical properties of amorphous rare earth-transition metal (RE-TM) alloys as well as the magnetic coupling in the multi-layer thin films for high density optical data storage are presented. Using magnetic effect in scanning tunneling microscopy the clusters structure of amorphous RE-TM thin films has been observed and the perpendicular magnetic anisotropy in amorphous RE-TM thin films has been interpreted. Experimental results of quick phase transformation under short pulse laser irradiation of amorphous semiconductor and metallic alloy thin films for phase change optical recording are reported. A step-by-step phase transformation process through metastable states has been observed. The waveform of crystallization propagation in micro-size spot during laser recording in amorphous semiconductor thin films is characterized and quick recording and erasing mechanism for optical data storage with high performance are discussed. The nonlinear optical effects in amorphous alloy thin films have been studied. By photo-thermal effect or third order optical nonlinearity, the optical self-focusing is observed in amorphous mask thin films. The application of amorphous thin films with super-resolution near field structure for high-density optical data storage is performed. (c) 2007 Elsevier B.V. All rights reserved.

Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO2(100) substrates

The nonpolar m-plane (1 (1) over bar 00) thin film GaN and InGaN/GaN light-emitting diodes (LEDs) grown by metal-organic chemical vapor deposition on LiAlO2 (100) substrates are reported. The LEDs emit green light with output power of 80 mu W under a direct current of 20 mA for a 400x400 mu m(2) device. The current versus voltage (I-V) characteristic of the diode shows soft rectifying properties caused by defects and impurities in the p-n junction. The electroluminescence peak wavelength dependence on injection current, for currents in excess of 20 mA, saturates at 515-516 nm. This proves the absence of polarization fields in the active region present in c-plane structures. The light output intensity versus current (L-I) characteristic of the diode exhibits a superlinear relation at low injection current caused by nonradiative centers providing a shunt path and a linear light emission zone at high current level when these centers are saturated. (c) 2007 American Institute of Physics.

Modelling material transfer in metal rolling using plasticine

Plasticine strips are rolled between cylindrical rollers to model the phenomenon of material transfer in metal rolling. Strips of thin plastic film ('clingfilm') on the plasticine strip are used to model the oxide layer that covers the surface of aluminium. The effect of gaps opening up between the clingfilm strips is investigated. It is found that the percentage area of the exposed strip giving rise to transfer of material increases with the gap width. The evidence strongly suggests that plasticine particles transferred to the rolls are able to pick off plasticine from the strip on successive passes. Larger plasticine particles are more likely to show this behaviour and consequently grow in size. The results confirm the usefulness of plasticine as a suitable material to investigate transfer layer formation in metal rolling, and help inform development of experimental procedures to study the evolution of real metal transfer layers. © 2007 Elsevier B.V. All rights reserved.

Stepped gate polysilicon thin film transistor for large area power applications

For the first time, we report a new poly-Si stepped gate Thin Film Transistor (SG TFT) on glass. The Density of States extracted from measured I-V characteristics has been used to evaluate the device performance with a two dimensional device simulator. The results show that the three-terminal SG TFT device has a switching speed comparable to a low voltage structure and the high on-current capability of a metal field plate (MFP) TFT and the potential for comparable breakdown characteristics.

Individual grain boundary properties and overall performance of metal-organic-deposition coated conductors

We have investigated single grain boundaries (GBs) isolated in coated conductors produced by Metal-Organic Deposition (MOD). When a magnetic field is swept in the film plane, an angle-dependent crossover from boundary to grain limited critical current density Jc is found. In the force-free orientation, even at fields as high as 8 T, the GBs still limit Jc. We deduce that this effect is a direct consequence of GB meandering. We have employed these single GB results to explain the dependence of Jc of polycrystalline tracks on their width: in-plane measurements become flatter as the tracks are narrowed down. This result is consistent with the stronger GB limitation at field configurations close to force-free found from the isolated boundaries. Our study shows that for certain geometries even at high fields the effect of GBs cannot be neglected.

Tests for conceptual design of 6.6 kV class superconducting fault current limiter with YBCO thin film elements

A superconducting fault current limiter (SFCL) for 6.6 kV and 400 A installed in a cubicle for a distribution network substation was conceptually designed. The SFCL consists of parallel- and series-connected superconducting YBCO elements and a limiting resistor. Before designing the SFCL, some tests were carried out. The width and length of each element used in the tests are 30 mm and 210 mm, respectively. The element consists of YBCO thin film of about 200 nm in thickness on cerium dioxide (CeO2) as a cap-layer on a sapphire substrate by metal-organic deposition with a protective metal coat. In the tests, characteristics of each element, such as over-current, withstand-voltage, and so on, were obtained. From these characteristics, series and parallel connections of the elements, called units, were considered. The characteristics of the units were obtained by tests. From the test results, a single phase prototype SFCL was manufactured and tested. Thus, an SFCL rated at 6.6 kV and 400 A can be designed. © 2009 IEEE.

Thin film coil design considerations for wireless power transfer in flat panel display

Wireless power transfer is experimentally demonstrated by transmission between an AC power transmitter and receiver, both realised using thin film technology. The transmitter and receiver thin film coils are chosen to be identical in order to promote resonant coupling. Planar spiral coils are used because of the ease of fabrication and to reduce the metal layer thickness. The energy transfer efficiency as a function of transfer distance is analysed along with a comparison between the theoretical and the experimental results. © 2012 Materials Research Society.

Amorphous silicon thin film transistor biosensing system

Electronic systems are a very good platform for sensing biological signals for fast point-of-care diagnostics or threat detection. One of the solutions is the lab-on-a-chip integrated circuit (IC), which is low cost and high reliability, offering the possibility for label-free detection. In recent years, similar integrated biosensors based on the conventional complementary metal oxide semiconductor (CMOS) technology have been reported. However, post-fabrication processes are essential for all classes of CMOS biochips, requiring biocompatible electrode deposition and circuit encapsulation. In this work, we present an amorphous silicon (a-Si) thin film transistor (TFT) array based sensing approach, which greatly simplifies the fabrication procedures and even decreases the cost of the biosensor. The device contains several identical sensor pixels with amplifiers to boost the sensitivity. Ring oscillator and logic circuits are also integrated to achieve different measurement methodologies, including electro-analytical methods such as amperometric and cyclic voltammetric modes. The system also supports different operational modes. For example, depending on the required detection arrangement, a sample droplet could be placed on the sensing pads or the device could be immersed into the sample solution for real time in-situ measurement. The entire system is designed and fabricated using a low temperature TFT process that is compatible to plastic substrates. No additional processing is required prior to biological measurement. A Cr/Au double layer is used for the biological-electronic interface. The success of the TFT-based system used in this work will open new avenues for flexible label-free or low-cost disposable biosensors. © 2013 Materials Research Society.

Direct epitaxial growth of θ-Ni2Si by reaction of a thin Ni(10 at.% Pt) film with Si(1 0 0) substrate

The reaction between an 11 nm Ni(10 at.% Pt) film on a Si substrate has been examined by in situ X-ray diffraction (XRD), atom probe tomography (APT) and transmission electron microscopy (TEM). In situ XRD experiments show the unusual formation of a phase without an XRD peak through consumption of the metal. According to APT, this phase has an Si concentration gradient in accordance with the θ-Ni2Si metastable phase. TEM analysis confirms the direct formation of θ-Ni2Si in epitaxy on Si(1 0 0) with two variants of the epitaxial relationship. © 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

A highly efficient light-trapping structure for thin-film silicon solar cells

A highly efficient light-trapping structure, consisting of a diffractive grating, a distributed Bragg reflector (DBR) and a metal reflector was proposed. As an example, the proposed light-trapping structure with an indium tin oxide (ITO) diffraction grating, an a-Si:H/ITO DBR and an Ag reflector was optimized by the simulation via rigorous coupled-wave analysis (RCWA) for a 2.0-mu m-thick c-Si solar cell with an optimized ITO front antireflection (AR) layer under the air mass 1.5 (AM1.5) solar illumination. The weighted absorptance under the AM1.5 solar spectrum (A(AM1.5)) of the solar cell can reach to 69%, if the DBR is composed of 4 pairs of a-Si:H/ITOs. If the number of a-Si:H/ITO pairs is up to 8, a larger A(AM1.5) of 72% can be obtained. In contrast, if the Ag reflector is not adopted, the combination of the optimized ITO diffraction grating and the 8-pair a-Si:H/ITO DBR can only result in an A(AM1.5) of 68%. As the reference, A(AM1.5) = 31% for the solar cell only with the optimized ITO front AR layer. So, the proposed structure can make the sunlight highly trapped in the solar cell. The adoption of the metal reflector is helpful to obtain highly efficient light-trapping effect with less number of DBR pairs, which makes that such light-trapping structure can be fabricated easily.

A simple route of morphology control and structural and optical properties of ZnO grown by metal-organic chemical vapour deposition

Employing the metal-organic chemical vapour deposition (MOCVD) technique, we prepare ZnO samples with different morphologies from the film to nanorods through conveniently changing the bubbled diethylzinc flux (BDF) and the carrier gas flux of oxygen (OCGF). The scanning electron microscope images indicate that small BDF and OCGF induce two-dimensional growth while the large ones avail quasi-one-dimensional growth. X-ray diffraction (XRD) and Raman scattering analyses show that all of the morphology-dependent ZnO samples are of high crystal quality with a c-axis orientation. From the precise shifts of the 2 theta. locations of ZnO (002) face in the XRD patterns and the E-2(high) locations in the Raman spectra, we deduce that the compressive stress forms in the ZnO samples and is strengthened with the increasing BDF and OCGF. Photoluminescence spectroscopy results show all the samples have a sharp ultraviolet luminescent band without any defects-related emission. Upon the experiments a possible growth mechanism is proposed.

Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition

ZnO films were grown at low pressure in a vertical metal-organic vapor deposition (MOCVD) reactor with a rotating disk. The structural and morphological properties of the ZnO films grown at different disk rotation rate (DRR) were investigated. The growth rate increases with the increase of DRR. The ZnO film grown at the DRR of 450 revolutions per minute (rpm) has the lowest X-ray rocking curve full width at half maximum and shows the best crystalline quality and morphology. In addition, the crystalline quality and morphology are improved as the DRR increased but both are degraded when the DRR is higher than 450 rpm. These results can help improve in understanding the rotation effects on the ZnO films grown by MOCVD. (C) 2007 Elsevier B.V. All rights reserved.