943 resultados para Membrana de alumina anódica
Resumo:
We measured the wear resistances of alumina, alumina/silicon carbide composite and alumina/mullite composite by abrasive wear. And we studied the influence of fracture mode and worn surface pullout on wear resistance. The results are as follows: the main wear mechanisms of alumina and alumina/silicon carbide were fracture wear and plastic wear respectively, and for alumina/mullite composite, fracture wear and plastic wear mechanisms worked together. The wear resistance of the alumina/silicon carbide composite and the alumina/mullite composite was better by a factor of 1 similar to 3 than that of the monolithic alumina. There were two main reasons for the better wear resistance, i.e., the improved mechanical properties and the more smooth worn surfaces. However, The primary reason was the reduction of area fraction of pullout on the worn surfaces induced by fracture mode transition. (C) 2007 Published by Elsevier B.V.
Resumo:
Alumina and alumina/mullite composites with mullite content of 0.96-8.72 vol.% were subjected to an abrasive wear test under loads of 0.1-2.0 N with a ball-on-disc apparatus. The wear rate and area fraction of pullout f(po) on the worn surfaces were measured. The wear resistances of the alumina/mullite composites were better by a factor of 1-2 than that of pure alumina. The main wear mechanism of alumina is fracture wear, and for alumina/mullite composites, fracture wear and plastic wear mechanisms work together. The influence of mechanical properties on wear resistance was estimated by Evans' method. It was found that the wear rate depends on f(po), and the primary reason for the better wear resistance of alumina/mullite composites is the reduction off, induced by fracture mode transition. (c) 2007 Elsevier B.V. All rights reserved.
Resumo:
A free-standing, bidirectionally permeable and ultra-thin (500-1000 nm) porous anodic alumina membrane was fabricated using a two-step aluminium anodization process, which was then placed on top of a silicon film as an etching mask. The pattern was transferred to silicon using dry-etching technology, and the silicon nanopore array structure was formed. The factors which afflct the pattern transfer process are discussed. Observation of the nanopatterned sample under a scanning electron microscope shows that the structure obtained by this method is made up of uniform and highly ordered holes, which attains to 125 nm depth. The photoluminescence spectrum from the nanopatterned sample,the surface of which has been thermal-oxidized, shows that the the luminesce is evidently enhanced, the mechanism of which is based on the normally weak TO phonon assisted bandgap light-emission process, and the physical reasons that underlic the enhancement have been analyzed. The PL results do show an attractive optical characteristic, which provides a promising pathway to achieve efficient light emission from silicon.
Resumo:
This work demonstrates the condition optimization during liquid phase deposition (LPD) Of SiO2/GaAs films. LPD method is further applied to form Al2O3 films on semiconductors with poison-free materials. Proceeding at room temperature with inexpensive equipment, LPD of silica and alumina films is potentially serviceable in microelectronics and related spheres.