Stabilization of self-assembled alumina mesophases

An efficient route to stabilize alumina mesophases derived from evaporation-induced self-assembly is reported after investigating various aspects in-depth: influence of the solvent (EtOH, s-BuOH, and t-BuOH) on the textural and structural properties of the mesophases based on aluminum tri-sec-butoxide (ATSB), synthesis reproducibility, role of nonvolatile acids, and the crystallization and thermal stability of the crystalline counterparts. Mesophase specific surface area and pore uniformity depend notably on the solvent; s-BuOH yields the highest surface area and pore uniformity. The optimal mesophase synthesis is reproducible with standard deviations in the textural parameters below 5%. The most pore-uniform mesophases from the three solvents were thermally activated at 1023 K to crystallize them into γ-alumina. The s-BuOH mesophase is remarkably thermally stable, retaining the mesoscopic wormhole order with 300 m2/g (0.45 cm3/g) and an increased acidic site density. These features are not obtained with EtOH or t-BuOH, where agglomerated γ-Al2O3 crystallites are formed with lower surface areas and broader pore size distributions. This was rationalized by the increase of the hydrolysis rate using EtOH and t-BuOH. t-BuOH dehydrates under the synthesis conditions or reacts with HCl, situations that increase the water concentration and rate of hydrolysis. It was found that EtOH exchanges rapidly, producing a highly reactive Al-ethoxide, thus enhancing the hydrolysis rate as well. Particle heterogeneity with random packing of fibrous and wormhole morphologies, attributed to the high hydrolysis rate, was observed for mesophases derived from both solvents. Such a low particle coordination favors coarsening with enlargement of the pore size distribution upon thermal treatment, explaining the lower thermal stability. Controlled hydrolysis and formation of low-polymerized Al species in s-BuOH are possibly responsible for the adequate assembly onto the surfactant. This was verified by the formation of a regular distribution of relatively size-uniform nanoparticles in the mesophase; high particle coordination prevents coarsening, favors densification, and maintains a relatively uniform pore size distribution upon thermal treatment. The acid removal in the evaporation is another key factor to promote network condensation in this route. © 2013 American Chemical Society.

Advancing atomic nanolithography: cold atomic Cs beam exposure of alkanethiol self-assembled monolayers

We report the results of a study into the quality of functionalized surfaces for nanolithographic imaging. Self-assembled monolayer (SAM) coverage, subsequent post-etch pattern definition and minimum feature size all depend on the quality of the Au substrate used in atomic nanolithographic experiments. We find sputtered Au substrates yield much smoother surfaces and a higher density of {111} oriented grains than evaporated Au surfaces. A detailed study of the self-assembly mechanism using molecular resolution AFM and STM has shown that the monolayer is composed of domains with sizes typically of 5-25 nm, and multiple molecular domains can exist within one Au grain. Exposure of the SAM to an optically-cooled atomic Cs beam traversing a two-dimensional array of submicron material masks ans also standing wave optical masks allowed determination of the minimum average Cs dose (2 Cs atoms per SAM molecule) and the realization of < 50 nm structures. The SAM monolayer contains many non-uniformities such as pin-holes, domain boundaries and monoatomic depressions which are present in the Au surface prior to SAM adsorption. These imperfections limit the use of alkanethiols as a resist in atomic nanolithography experiments. These studies have allowed us to realize an Atom Pencil suitable for deposition of precision quantities of material at the microand nanoscale to an active surface.

Atomic nanolithography patterning of submicron features: writing an organic self-assembled monolayer with cold bright Cs atom beams

Cs atom beams, transversely collimated and cooled, passing through material masks in the form of arrays of reactive-ion-etched hollow Si pyramidal tips and optical masks formed by intense standing light waves, write submicron features on self-assembled monolayers (SAMs). Features with widths as narrow as 43 ± 6 nm and spatial resolution limited only by the grain boundaries of the substrate have been realized in SAMs of alkanethiols. The material masks write two-dimensional arrays of submicron holes; the optical masks result in parallel lines spaced by half the optical wavelength. Both types of feature are written to the substrate by exposure of the masked SAM to the Cs flux and a subsequent wet chemical etch. For the arrays of pyramidal tips, acting as passive shadow masks, the resolution and size of the resultant feature depends on the distance of the mask array from the SAM, an effect caused by the residual divergence of the Cs atom beam. The standing wave optical mask acts as an array of microlenses focusing the atom flux onto the substrate. Atom 'pencils' writing on SAMs have the potential to create arbitrary submicron figures in massively parallel arrays. The smallest features and highest resolutions were realized with SAMs grown on smooth, sputtered gold substrates.

Writing self-assembled monolayers with Cs: Optimization of atomic nanolithography imaging using self-assembled monolayers on gold substrates

We report the results of a study into the factors controlling the quality of nanolithographic imaging. Self-assembled monolayer (SAM) coverage, subsequent postetch pattern definition, and minimum feature size all depend on the quality of the Au substrate used in material mask atomic nanolithographic experiments. We find that sputtered Au substrates yield much smoother surfaces and a higher density of {111}-oriented grains than evaporated Au surfaces. Phase imaging with an atomic force microscope shows that the quality and percentage coverage of SAM adsorption are much greater for sputtered Au surfaces. Exposure of the self-assembled monolayer to an optically cooled atomic Cs beam traversing a two-dimensional array of submicron material masks mounted a few microns above the self-assembled monolayer surface allowed determination of the minimum average Cs dose (2 Cs atoms per self-assembled monolayer molecule) to write the monolayer. Suitable wet etching, with etch rates of 2.2 nm min-1, results in optimized pattern definition. Utilizing these optimizations, material mask features as small as 230 nm in diameter with a fractional depth gradient of 0.820 nm were realized.

The nature of alkanethiol self-assembled monolayer adsorption on sputtered gold substrates

A detailed study of the self-assembly and coverage by 1-nonanethiol of sputtered Au surfaces using molecular resolution atomic force microscopy (AFM) and scanning tunneling microscopy (STM) is presented. The monolayer self-assembles on a smooth Au surface composed predominantly of {111} oriented grains. The domains of the alkanethiol monolayer are observed with sizes typically of 5-25 nm, and multiple molecular domains can exist within one Au grain. STM imaging shows that the (4 × 2) superlattice structure is observed as a (3 × 2√3) structure when imaged under noncontact AFM conditions. The 1-nonanethiol molecules reside in the threefold hollow sites of the Au{111} lattice and aligned along its lattice vectors. The self-assembled monolayer (SAM) contains many nonuniformities such as pinholes, domain boundaries, and monatomic depressions which are present in the Au surface prior to SAM adsorption. The detailed observations demonstrate limitations to the application of 1-nonanethiol as a resist in atomic nanolithography experiments to feature sizes of ∼20 nm.

Self-Assembled InAs/GaAs Quantum Dot Solar Cells

Our work focuses on experimental and theoretical studies aimed at establishing a fundamental understanding of the principal electrical and optical processes governing the operation of quantum dot solar cells (QDSC) and their feasibility for the realization of intermediate band solar cell (IBSC). Uniform performance QD solar cells with high conversion efficiency have been fabricated using carefully calibrated process recipes as the basis of all reliable experimental characterization. The origin for the enhancement of the short circuit current density (Jsc) in QD solar cells was carefully investigated. External quantum efficiency (EQE) measurements were performed as a measure of the below bandgap distribution of transition states. In this work, we found that the incorporation of self-assembled quantum dots (QDs) interrupts the lattice periodicity and introduce a greatly broadened tailing density of states extending from the bandedge towards mid-gap. A below-bandgap density of states (DOS) model with an extended Urbach tail has been developed. In particular, the below-bandgap photocurrent generation has been attributed to transitions via confined energy states and background continuum tailing states. Photoluminescence measurement is used to measure the energy level of the lowest available state and the coupling effect between QD states and background tailing states because it results from a non-equilibrium process. A basic I-V measurement reveals a degradation of the open circuit voltage (Voc) of QD solar cells, which is related to a one sub-bandgap photon absorption process followed by a direct collection of the generated carriers by the external circuit. We have proposed a modified Shockley-Queisser (SQ) model that predicts the degradation of Voc compared with a reference bulk device. Whenever an energy state within the forbidden gap can facilitate additional absorption, it can facilitate recombination as well. If the recombination is non-radiative, it is detrimental to solar cell performance. We have also investigated the QD trapping effects as deep level energy states. Without an efficient carrier extraction pathway, the QDs can indeed function as mobile carriers traps. Since hole energy levels are mostly connected with hole collection under room temperature, the trapping effect is more severe for electrons. We have tried to electron-dope the QDs to exert a repulsive Coulomb force to help improve the carrier collection efficiency. We have experimentally observed a 30% improvement of Jsc for 4e/dot devices compared with 0e/dot devices. Electron-doping helps with better carrier collection efficiency, however, we have also measured a smaller transition probability from valance band to QD states as a direct manifestation of the Pauli Exclusion Principle. The non-linear performance is of particular interest. With the availability of laser with on-resonance and off-resonance excitation energy, we have explored the photocurrent enhancement by a sequential two-photon absorption (2PA) process via the intermediate states. For the first time, we are able to distinguish the nonlinearity effect by 1PA and 2PA process. The observed 2PA current under off-resonant and on-resonant excitation comes from a two-step transition via the tailing states instead of the QD states. However, given the existence of an extended Urbach tail and the small number of photons available for the intermediate states to conduction band transition, the experimental results suggest that with the current material system, the intensity requirement for an observable enhancement of photocurrent via a 2PA process is much higher than what is available from concentrated sun light. In order to realize the IBSC model, a matching transition strength needs to be achieved between valance band to QD states and QD states to conduction band. However, we have experimentally shown that only a negligible amount of signal can be observed at cryogenic temperature via the transition from QD states to conduction band under a broadband IR source excitation. Based on the understanding we have achieved, we found that the existence of the extended tailing density of states together with the large mismatch of the transition strength from VB to QD and from QD to CB, has systematically put into question the feasibility of the IBSC model with QDs.

Structural and optical properties of InAs/GaAs quantum structures

The goal of the thesis was to study fundamental structural and optical properties of InAs islands and In(Ga)As quantum rings. The research was carried out at the Department of Micro and Nanosciences of Helsinki University of Technology. A good surface quality can be essential for the potential applications in optoelectronic devices. For such device applications it is usually necessary to control size, density and arrangement of the islands. In order to study the dependence of the structural properties of the islands and the quantum rings on growth conditions, atomic force microscope was used. Obtained results reveal that the size and the density of the In(Ga)As quantum rings strongly depend on the growth temperature, the annealing time and the thickness of the partial capping layer. From obtained results it is possible to conclude that to get round shape islands and high density one has to use growth temperature of 500 ̊C. In the case of formation of In(Ga)As quantum rings the effect of mobility anisotropy is observed that so the shape of the rings is not symmetric. To exclude this effect it is preferable to use a higher annealing temperature of 570 ̊C. Optical properties were characterized by PL spectroscopy. PL emission was observed from buried InAs quantum dots and In(Ga)As quantum rings grown with different annealing time and temperature and covered with a various thickness of the partial capping layer.

Ordered gan/ingan nanorods arrays grown by molecular beam epitaxy for phosphor-free white light emission

The basics of the self-assembled growth of GaN nanorods on Si(111) are reviewed. Morphology differences and optical properties are compared to those of GaN layers grown directly on Si(111). The effects of the growth temperature on the In incorporation in self-assembled InGaN nanorods grown on Si(111) is described. In addition, the inclusion of InGaN quantum disk structures into selfassembled GaN nanorods show clear confinement effects as a function of the quantum disk thickness. In order to overcome the properties dispersion and the intrinsic inhomogeneous nature of the self-assembled growth, the selective area growth of GaN nanorods on both, c-plane and a-plane GaN on sapphire templates, is addressed, with special emphasis on optical quality and morphology differences. The analysis of the optical emission from a single InGaN quantum disk is shown for both polar and non-polar nanorod orientations

High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth

High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by metalorganic chemical vapor deposition (MOCVD) on a nano-patterned SiO2/GaN template. The nanoporous SiO2 on GaN surface was created by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) template as a mask. This selective regrowth results in highly crystalline GaN nanodots confirmed by high resolution transmission electron microscopy. The narrow size distribution and uniform spatial position of the nanoscale dots offer potential advantages over self-assembled dots grown by the Stranski–Krastanow mode.

On the reversed crystal growth of BaZrO3 decaoctahedron: shape evolution and mechanism

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Investigations of cooperative interactions in template induced crystallization processes and kinetic studies of nucleation and growth by small-angle neutron scattering

Zusammenfassung Um zu einem besseren Verständnis des Prozesses der Biomineralisation zu gelangen, muss das Zusammenwirken der verschiedenen Typen biologischer Makromoleküle, die am Keimbildungs- und Wachstumsprozess der Minerale beteiligt sind, berücksichtigt werden. In dieser Arbeit wird ein neues Modellsystem eingeführt, das aus einem SAM (self-assembled monolayer) mit verschiedenen Funktionalitäten und unterschiedlichen, gelösten Makromolekülen besteht. Es konnte gezeigt werden, dass die Kristallisation von Vaterit (CaCO3) sowie Strontianit (SrCO3) Nanodrähten der Präsenz von Polyacrylat in Kooperation mit einer COOH-funktionalisierten SAM-Oberfläche zugeschrieben werden kann. Die Kombination bestehend aus einer polaren SAM-Oberfläche und Polyacrylat fungiert als Grenzfläche für die Struktur dirigierende Kristallisation von Nanodraht-Kristallen. Weiter konnte gezeigt werden, dass die Phasenselektion von CaCO3 durch die kooperative Wechselwirkung zwischen einer SAM-Oberfläche und einem daran adsorbierten hb-Polyglycerol kontrolliert wird. Auch die Funktionalität einer SAM-Oberfläche in Gegenwart von Carboxymethyl-cellulose übt einen entscheidenden Einfluss auf die Phasenselektion des entstehenden Produktes aus. In der vorliegenden Arbeit wurden Untersuchungen an CaCO3 zur homogenen Keimbildung, zur Nukleation in Gegenwart eines Proteins sowie auf Kolloiden, die als Template fungieren, mittels Kleinwinkel-Neutronenstreuung durchgeführt. Die homogene Kristallisation in wässriger Lösung stellte sich als ein mehrstufiger Prozess heraus. In Gegenwart des Eiweißproteins Ovalbumin konnten drei Phasen identifiziert werden, darunter eine anfänglich vorhandene amorphe sowie zwei kristalline Phasen.

The calcite(10-14) surface: a versatile substrate for molecular self-assembly

This thesis presents a detailed and successful study of molecular self-assembly on the calcite CaCO3(10-14) surface. One reason for the superior applicability of this particular surface is given by reflecting the well-known growth modes. Layer-by-layer growth, which is a necessity for the formation of templated two-dimensional (2D) molecular structures, is particularly favoured on substrates with a high surface energy. The CaCO3(10-14) surface is among those substrates and, thus, most promising. rnrnAll experiments in this thesis were performed using the non-contact atomic force microscope (NC-AFM) under ultra-high vacuum conditions. The acquisition of drift-free data became in this thesis possible owing to the herein newly developed atom-tracking system. This system features a lateral tip-positioning precision of at least 50pm. Furthermore, a newly developed scan protocol was implemented in this system, which allows for the acquisition of dense three-dimensional (3D) data under room-temperature conditions. An entire 3D data set from a CaCO3(10-14) surface consisting of 85x85x500 pixel is discussed. rnrnThe row-pairing and (2x1) reconstructions of the CaCO3(10-14) surface constitute most interesting research subjects. For both reconstructions, the NC-AFM imaging was classified to a total of 12 contrast modes. Eight of these modes were observed within this thesis, some of them for the first time. Together with literature findings, a total of 10 modes has been observed experimentally to this day. Some contrast modes presented themselves as highly distance-dependent and at least for one contrast mode, a severe tip-termination influence was found. rnrnMost interestingly, the row-pairing reconstruction was found to break a symmetry element of the CaCO3(10-14) surface. With the presence of this reconstruction, the calcite (10-14) surface becomes chiral. From high-resolution NC-AFM data, the identification of the enantiomers is here possible and is presented for one enantiomer in this thesis. rnrnFive studies of self-assembled molecular structures on calcite (10-14) surfaces are presented. Only for one system, namely HBC/CaCO3(10-14), the formation of a molecular bulk structure was observed. This well-known occurence of weak molecule-insulator interaction hinders the investigation of two-dimensional molecular self-assembly. It was, however, possible to force the formation of an island phase for this system upon following a variable-temperature preparation. rnFor the C60/CaCO3(10-14) system it is most notably that no branched island morphologies were found. Instead, the first C60 layer appeared to wet the calcite surface. rnrnIn all studies, the molecules arranged themselves in ordered superstructures. A templating effect due to the underlying calcite substrate was evident for all systems. This templating strikingly led either to the formation of large commensurate superstructures, such as (2x15) with a 14 molecule basis for the C60/CaCO3(10-14) system, or prevented the vast growth of incommensurate molecular motifs, such as the chicken-wire structure in the trimesic acid (TMA)/CaCO3(10-14) system. rnrnThe molecule-molecule and the molecule-substrate interaction was increased upon choosing molecules with carboxylic acid moieties in the third, fourth and fifth study, using terephthalic acid, TMA and helicene molecules. In all these experiments, hydrogen-bonded assemblies were created. rnrnDirected hydrogen bond formation combined with intermolecular pi-pi interaction is employed in the fifth study, where the formation of uni-directional molecular "wires" from single helicene molecules succeeded. Each "wire" is composed of heterochiral helicene pairs, well-aligned along the [01-10] substrate direction and stabilised by pi-pi interaction.