Part I. Efforts directed towards the total synthesis of shionone. Part II. Conversion of estrone to androst-4-EN-3-ONE: a new method for activating the C-9 and C-10 positions of estrogenic steroids for substitution

Part I: An approach to the total synthesis of the triterpene shionone is described, which proceeds through the tetracyclic ketone i. The shionone side chain has been attached to this key intermediate in 5 steps, affording the olefin 2 in 29% yield. A method for the stereo-specific introduction of the angular methyl group at C-5 of shionone has been developed on a model system. The attempted utilization of this method to convert olefin 2 into shionone is described.

Part II: A method has been developed for activating the C-9 and C-10 positions of estrogenic steroids for substitution. Estrone has been converted to 4β,5β-epoxy-10β-hydroxyestr-3-one; cleavage of this epoxyketone using an Eschenmoser procedure, and subsequent modification of the product afforded 4-seco-9-estren-3,5-dione 3-ethylene acetal. This versatile intermediate, suitable for substitution at the 9 and/or 10 position, was converted to androst-4-ene-3-one by known procedures.

Ridge optical waveguide in an Er3+/Yb3+ co-doped phosphate glass produced by He+ ion implantation combined with Ar+ ion beam etching

This paper reports on the fabrication and characterization of a ridge optical waveguide in an Er3+/Yb3+ co-doped phosphate glass. The He+ ion implantation (at energy of 2.8 MeV) is first applied onto the sample to produce a planar waveguide substrate, and then Ar+ ion beam etching (at energy of 500 eV) is carried out to construct rib stripes on the sample surface that has been deposited by a specially designed photoresist mask. According to a reconstructed refractive index profile of the waveguide cross section, the modal distribution of the waveguide is simulated by applying a computer code based on the beam propagation method, which shows reasonable agreement with the experimentally observed waveguide mode by using the end-face coupling method. Simulation of the incident He ions at 2.8 MeV penetrating into the Er3+/Yb3+ co-doped phosphate glass substrate is also performed to provide helpful information on waveguide formation.

Mechanism of polarization pinning in vertical cavity surface emitting lasers using focused ion beam etching

Photoluminescence experiments have identified strain as the origin for polarization pinning in vertical cavity surface emitting lasers post-processed by focused ion beam etching. Theoretical models were applied to deduce the strain in devices. Post-annealing was used to optimize polarization pinning.

High power laser with integrated lens using focused ion beam etching

In this study, a collimating lens is introduced at the output facet of a tapered waveguide laser to compensate for the divergence of the optical mode. The collimating lens is shown to enhance the laser efficiency while simultaneously reducing the far field divergence.

Fabrication of photonic crystal on semiconductor materials by using focued ion-beam

A method of manufacturing two-dimensional photonic crystals on several kinds of semiconductor materials in near infrared region by a focused ion beam is introduced, and the corresponding fabrication results are presented and show that the obtained parameters of fabricated photonic crystals are identical with the designed ones. Using the tunable laser source, the spectra of the fabricated passive photonic crystal and the active photonic crystal are measured. The experiment demonstrates that the focused ion-beam can be used to fabricate the perfect two-dimensional photonic crystals and their devices.

Carbon film deposited by mass-selected low energy ion beam technique and ion bombardment effect

By mass-selected low energy ion beam deposition, amorphous carbon film was obtained. X-ray diffraction, Raman and Auger electron spectroscopy depth line shape measurements showed that such carbon films contained diamond particles. The main growth mechanism is subsurface implantation. Furthermore, it was indicated in a different way that ion bombardment played a decisive role in bias enhanced nucleation of chemical vapor deposition diamond.