Substrate temperature influenced physical properties of silicon MOS devices with TiO2 gate dielectric

DC reactive magnetron sputtering technique was employed for deposition of titanium dioxide (TiO2) films. The films were formed on Corning glass and p-Si (100) substrates by sputtering of titanium target in an oxygen partial pressure of 6x10-2 Pa and at different substrate temperatures in the range 303 673 K. The films formed at 303 K were X-ray amorphous whereas those deposited at substrate temperatures?=?473 K were transformed into polycrystalline nature with anatase phase of TiO2. Fourier transform infrared spectroscopic studies confirmed the presence of characteristic bonding configuration of TiO2. The surface morphology of the films was significantly influenced by the substrate temperature. MOS capacitor with Al/TiO2/p-Si sandwich structure was fabricated and performed currentvoltage and capacitancevoltage characteristics. At an applied gate voltage of 1.5 V, the leakage current density of the device decreased from 1.8?x?10-6 to 5.4?x?10-8 A/cm2 with the increase of substrate temperature from 303 to 673 K. The electrical conduction in the MOS structure was more predominant with Schottky emission and Fowler-Nordheim conduction. The dielectric constant (at 1 MHz) of the films increased from 6 to 20 with increase of substrate temperature. The optical band gap of the films increased from 3.50 to 3.56 eV and refractive index from 2.20 to 2.37 with the increase of substrate temperature from 303 to 673 K. Copyright (c) 2012 John Wiley & Sons, Ltd.

Nonstoichiometry, defects and thermodynamic properties of YFeO3, YFe2O4 and Y3Fe5O12

Oxygen nonstoichiometry of three ternary oxides. YFeO3-delta, YFe2O4-alpha and Y3Fe5O12-theta. in the system Y-Fe-O was investigated as a function of oxygen partial pressure by thermogravimetry at high temperature. The defects responsible for nonstoichiometry were identified as oxygen vacancies for YFeO3-delta and YFe2O4-alpha although the manner of variation of nonstoichiometric parameter with oxygen partial pressure for these two oxides is quite different. Cation interstitials are the predominant defects in Y3Fe5O12-theta. Gibbs energies of formation of the three nonstoichiometric oxides were determined using solid-state electrochemical cells in the temperature range from 975 to 1475 K. YFe2O4-alpha was found to be stable only above 1391 K. Gibbs energies of formation of the three stoichiometric compounds from their component binary oxides were obtained by combining information from solid state cells with results of thermogravimetric analysis using the Gibbs-Duhem relation. The results can be summarized as: (1/2)Y2O3 + (1/2)Fe2O3 -> YFeO3;Delta G(f(ox))(O)(+/- 250)(J/mol) = 17, 126-8.263T (1/2)Y2O3 + FeO + (1/2)Fe2O3 -> YFe2O4;Delta G(f(ox))(O)(+/- 260)(J/mol) = -10,352-13.24T (3/2)Y2O3 + (5/2)Fe2O3 -> Y3Fe5O12;Delta G(f(ox))(O)(+/- 780)(J/mol) = -56, 647-31.091T. (C) 2012 Elsevier B.V. All rights reserved.

Low temperature growth of SnO2 nanowires by electron beam evaporation and their application in UV light detection

For the first time, high quality tin oxide (SnO2) nanowires have been synthesized at a low substrate temperature of 450 degrees C via vapor-liquid-solid mechanism using an electron beam evaporation technique. The grown nanowires have shown length of 2-4 mu m and diameter of 20-60 nm. High resolution transmission electron microscope studies on the grown nanowires have shown the single crystalline nature of the SnO2 nanowires. We investigated the effect of growth temperature and oxygen partial pressure on SnO2 nanowires growth. Variation of substrate temperature at a constant oxygen partial pressure of 4 x 10(-4) mbar suggested that a temperature equal to or greater than 450 degrees C was the best condition for phase pure SnO2 nanowires growth. The SnO2 nanowires grown on a SiO2 substrate were subjected to UV photo detection. The responsivity and quantum efficiency of SnO2 NWs photo detector (at 10V applied bias) was 12 A/W and 45, respectively, for 12 mu W/cm(2) UV lamp (330 nm) intensity on the photo detector.

A comparative study of room temperature ferromagnetism in MgO films deposited by rf/dc sputtering using high purity Mg and MgO targets

Thin films of nanocrystalline MgO were deposited on glass/Si substrates by rf/dc sputtering from metallic Mg, and ceramic MgO targets. The purpose of this study is to identify the differences in the properties, magnetic in particular, of MgO films obtained on sputter deposition from 99.99% pure metallic Mg target in a controlled Nitrogen + Oxygen partial pressure (O(2)pp)] atmosphere as against those deposited using an equally pure ceramic MgO target in argon + identical oxygen ambience conditions while maintaining the same total pressure in the chamber in both cases. Characterization of the films was carried out by X-ray diffraction, focussed ion beam cross sectioning, atomic force microscopy and SQUID-magnetometry. The `as-obtained' films from pure Mg target are found to be predominantly X-ray amorphous, while the ceramic MgO target gives crystalline films, (002) oriented with respect to the film plane. The films consisted of nano-crystalline grains of size in the range of about 0.4 to 4.15 nm with the films from metallic target being more homogeneous and consisting of mostly subnanometer grains. Both the types of films are found to be ferromagnetic to much above room temperature. We observe unusually high maximum saturation magnetization (MS) values of 13.75 emu/g and similar to 4.2 emu/g, respectively for the MgO films prepared from Mg, and MgO targets. The origin of magnetism in MgO films is attributed to Mg vacancy (V-Mg), and 2p holes localized on oxygen sites. The role of nitrogen in enhancing the magnetic moments is also discussed.

Thermodynamics of NdRhO3 and phase relations in the system Nd-Rh-O

Phase equilibrium experiments indicate that NdRhO3 is the only ternary oxide in the system Nd-Rh-O at 1273 K; it has orthorhombically-distorted perovskite structure. By employing a solid-state electrochemical cell incorporating calcia-stabilized zirconia as the electrolyte, thermodynamic properties of NdRhO3 are determined. The standard Gibbs energy of formation of NdRhO3 from its component binary oxides in the temperature ranges from 900 to 1300 K can be expressed as: 1/2Rh(2)O(3) (ortho)+1/2Nd(2)O(3)(hex)=NdRhO3(ortho), Delta(f(o,x))G(0)/J mol(-1)( +/- 197) = - 66256+5.64 (T/K). The decomposition temperature of NdRhO3 computed from extrapolated thermodynamic data is 1803 (+/- 4) K in pure oxygen and 1692 (+/- 4) K in air at standard pressure. Oxygen partial pressure-composition diagram and three-dimensional chemical potential diagram at 1273 K are developed from thermodynamic data obtained in this study and auxiliary information from the literature. Equilibrium temperature-composition phase diagrams at constant oxygen partial pressures are also constructed. (C) 2013 Elsevier Ltd. All rights reserved.

Control of magnetization reversal in oriented strontium ferrite thin films

Oriented Strontium Ferrite films with the c axis orientation were deposited with varying oxygen partial pressure on Al2O3(0001) substrate using Pulsed Laser Deposition technique. The angle dependent magnetic hysteresis, remanent coercivity, and temperature dependent coercivity had been employed to understand the magnetization reversal of these films. It was found that the Strontium Ferrite thin film grown at lower (higher) oxygen partial pressure shows Stoner-Wohlfarth type (Kondorsky like) reversal. The relative importance of pinning and nucleation processes during magnetization reversal is used to explain the type of the magnetization reversal with different oxygen partial pressure during growth. (C) 2014 AIP Publishing LLC.

Self Catalytic Growth of Indium Oxide (In2O3) Nanowires by Resistive Thermal Evaporation

Self catalytic growth of Indium Oxide (In2O3) nanowires (NWs) have been grown by resistive thermal evaporation of Indium (In) in the presence of oxygen without use of any additional metal catalyst. Nanowires growth took place at low substrate temperature of 370-420 degrees C at an applied current of 180-200 A to the evaporation boat. Morphology, microstructures, and compositional studies of the grown nanowires were performed by employing field emission scanning electron microscopy (FESEM), X-Ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) respectively. Nanowires were uniformly grown over the entire Si substrate and each of the nanowire is capped with a catalyst particle at their end. X-ray diffraction study reveals the crystalline nature of the grown nanowires. Transmission electron microscopy study on the nanowires further confirmed the single crystalline nature of the nanowires. Energy dispersive X-ray analysis on the nanowires and capped nanoparticle confirmed that Indium act as catalyst for In2O3 nanowires growth. A self catalytic Vapor-Liquid-Solid (VLS) growth mechanism was responsible for the growth of In2O3 nanowires. Effect of oxygen partial pressure variation and variation of applied currents to the evaporation boat on the nanowires growth was systematically studied. These studies concluded that at oxygen partial pressure in the range of 4 x 10(-4), 6 x 10(-4) mbar at applied currents to the evaporation boat of 180-200 A were the best conditions for good nanowires growth. Finally, we observed another mode of VLS growth along with the standard VLS growth mode for In2O3 nanowires similar to the growth mechanism reported for GaAs nanowires.

Preferential polarization and its reversal in polycrystalline BiFeO3/La0.5Sr0.5CoO3 heterostructures

Polycrystalline BiFeO3 thin films were grown on La0.5Sr0.5CoO3 buffered Pt (200)/TiO2/SiO2/Si substrates under different oxygen partial pressures (10, 25, 50 and 100 mTorr) by puked laser ablation. Piezo-response Force Microscopy and Piezo-Force Spectroscopy have shown that all the films are ferroelectric in nature with locally switchable domains. It has also revealed a preferential downward domain orientation in as-grown films grown under lower oxygen partial pressure (10 and 25 mTorr) with a reversal of preferential domain orientation as the oxygen partial pressure is increased to 100 mTorr during laser ablation. Such phenomena are atypical of multi-grained polycrystalline ferroelectric films and have been discussed On the basis of detect formation with changing growth conditions. For the 50 mTorr grown film, asymmetric domain stability and retention during write-read studies has been observed which is attributed to grain-size-related defect concentration, affecting pinning centres that inhibit domain wall motion. (C) 2015 Elsevier Ltd. All rights reserved.

Conductometric Sensing of H-2 by Chromium Niobate

Investigations on chromium niobate (CrNbO4) have shown that the material responds to a wide hydrogen concentration range of 0.01%-0.40% at 613 K. The conductivity of CrNbO4 is independent of oxygen partial pressure and offers to be a promising candidate for monitoring H-2 in radioactive spent fuel storage facilities. Reduction of metal ions to lower valence states during hydrogen sensing was evidenced by X-ray photoelectron spectroscopic studies.

Stable p-type conductivity in B and N co-doped ZnO epitaxial thin film

We report on the observation of stable p-type conductivity in B and N co-doped epitaxial ZnO thin films grown by pulsed laser deposition. Films grown at higher oxygen partial pressure (similar to 10(-1) Torr) shows p-type conductivity with a carrier concentration of similar to 3 x 10(16) cm(-3). This p-type conductivity is associated with the significant decrease in defect emission peaks due to the vacancy oxygen (V-O) and Schottky type-I native defects compared to films grown at low oxygen partial pressure (similar to 10(-5) Torr). The p-type conductivity is explained with the help of density functional theory (DFT) calculation considering off-stoichiometric BN1+x in the ZnO lattice. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

MEMS for Diabetic Retinopathy

As the worldwide prevalence of diabetes mellitus continues to increase, diabetic retinopathy remains the leading cause of visual impairment and blindness in many developed countries. Between 32 to 40 percent of about 246 million people with diabetes develop diabetic retinopathy. Approximately 4.1 million American adults 40 years and older are affected by diabetic retinopathy. This glucose-induced microvascular disease progressively damages the tiny blood vessels that nourish the retina, the light-sensitive tissue at the back of the eye, leading to retinal ischemia (i.e., inadequate blood flow), retinal hypoxia (i.e., oxygen deprivation), and retinal nerve cell degeneration or death. It is a most serious sight-threatening complication of diabetes, resulting in significant irreversible vision loss, and even total blindness.

Unfortunately, although current treatments of diabetic retinopathy (i.e., laser therapy, vitrectomy surgery and anti-VEGF therapy) can reduce vision loss, they only slow down but cannot stop the degradation of the retina. Patients require repeated treatment to protect their sight. The current treatments also have significant drawbacks. Laser therapy is focused on preserving the macula, the area of the retina that is responsible for sharp, clear, central vision, by sacrificing the peripheral retina since there is only limited oxygen supply. Therefore, laser therapy results in a constricted peripheral visual field, reduced color vision, delayed dark adaptation, and weakened night vision. Vitrectomy surgery increases the risk of neovascular glaucoma, another devastating ocular disease, characterized by the proliferation of fibrovascular tissue in the anterior chamber angle. Anti-VEGF agents have potential adverse effects, and currently there is insufficient evidence to recommend their routine use.

In this work, for the first time, a paradigm shift in the treatment of diabetic retinopathy is proposed: providing localized, supplemental oxygen to the ischemic tissue via an implantable MEMS device. The retinal architecture (e.g., thickness, cell densities, layered structure, etc.) of the rabbit eye exposed to ischemic hypoxic injuries was well preserved after targeted oxygen delivery to the hypoxic tissue, showing that the use of an external source of oxygen could improve the retinal oxygenation and prevent the progression of the ischemic cascade.

The proposed MEMS device transports oxygen from an oxygen-rich space to the oxygen-deficient vitreous, the gel-like fluid that fills the inside of the eye, and then to the ischemic retina. This oxygen transport process is purely passive and completely driven by the gradient of oxygen partial pressure (pO₂). Two types of devices were designed. For the first type, the oxygen-rich space is underneath the conjunctiva, a membrane covering the sclera (white part of the eye), beneath the eyelids and highly permeable to oxygen in the atmosphere when the eye is open. Therefore, sub-conjunctival pO₂ is very high during the daytime. For the second type, the oxygen-rich space is inside the device since pure oxygen is needle-injected into the device on a regular basis.

To prevent too fast or too slow permeation of oxygen through the device that is made of parylene and silicone (two widely used biocompatible polymers in medical devices), the material properties of the hybrid parylene/silicone were investigated, including mechanical behaviors, permeation rates, and adhesive forces. Then the thicknesses of parylene and silicone became important design parameters that were fine-tuned to reach the optimal oxygen permeation rate.

The passive MEMS oxygen transporter devices were designed, built, and tested in both bench-top artificial eye models and in-vitro porcine cadaver eyes. The 3D unsteady saccade-induced laminar flow of water inside the eye model was modeled by computational fluid dynamics to study the convective transport of oxygen inside the eye induced by saccade (rapid eye movement). The saccade-enhanced transport effect was also demonstrated experimentally. Acute in-vivo animal experiments were performed in rabbits and dogs to verify the surgical procedure and the device functionality. Various hypotheses were confirmed both experimentally and computationally, suggesting that both the two types of devices are very promising to cure diabetic retinopathy. The chronic implantation of devices in ischemic dog eyes is still underway.

The proposed MEMS oxygen transporter devices can be also applied to treat other ocular and systemic diseases accompanied by retinal ischemia, such as central retinal artery occlusion, carotid artery disease, and some form of glaucoma.

Epitaxial growth of ZnO thin films on LiGaO2 substrates by pulsed-laser deposition

Lattice-matched (Delta(a/a) = 1.8-3.4%) (001) LiGaO2 substrates have been employed for the first time to grow ZnO thin films by pulsed-laser deposition at 350-650 degrees C with oxygen partial pressure of 20Pa. XRD shows that a highly c-axis-oriented ZnO film can be deposited on (001) LiGaO2 substrate at 500 degrees C. AFM images reveal the surfaces of as-deposited ZnO films are smooth and root-mean-square values are 6.662, 5.765 and 6.834 nm at 350, 500 and 650 degrees C, respectively. PL spectra indicate only near-band-edge UV emission appears in the curve of ZnO film deposited at 500 degrees C. The deep-level emission of ZnO film deposited at 650 degrees C probably results from Li diffusion into the film. All the results illustrate substrate temperature plays a pretty important role in obtaining ZnO film with a high quality on LiGaO2 substrate by pulsed-laser deposition. (c) 2006 Elsevier B.V. All rights reserved.

沉积参量及时效时间对SiO2薄膜残余应力的影响

SiO2薄膜由电子束蒸发方法沉积而成。用GPI数字波面光学干涉仪测量了不同沉积条件下玻璃基底镀膜前后曲率半径的变化，并确定了SiO2薄膜中的残余应力。在其他条件相同的情况下，当沉积温度由190℃升高到350℃时，SiO2薄膜中的压应力由一156MPa增大为-289MPa。氧分压由3．0×10^-3Pa升高到13．0×10^-3Pa时，SiO2薄膜中的应力由-223．5MPa变为20．4MPa。通过对薄膜折射率的测量，发现薄膜的堆积密度随沉积条件的改变也发生了规律性的变化。应力的变化主要是由于沉积时蒸发粒子

氧分压对电子束蒸发SiO2薄膜机械性质和光学性质的影响

采用ZYGO MarkⅢ-GPI数字波面干涉仪、NamoScopeⅢa型原子力显微镜对不同氧分压下电子束蒸发方法制备的SiO2薄膜中的残余应力及表面形貌进行了研究，结果发现：随着氧分压的增大，薄膜中的压应力值逐渐减小，最后变为张应力状态；同时薄膜的表面粗糙度也随着氧分压的增大而逐渐增大，另外，折射率对氧分压也非常敏感，随着氧分压的增大呈现出了减小的趋势，这些现象主要是由于氧分压的改变使得SiO2薄膜结构发生了变化引起的。

氧分压对ZrO2薄膜激光损伤阈值的影响

在不同的氧分压下用电子束热蒸发的方法制备了ZrO2薄膜。分别通过X射线衍射、光学光谱、热透镜技术、抗激光辐照等测试，对所制备样品的微结构、折射率、吸收率及激光损伤阈值进行了测量。实验结果表明，薄膜中晶粒主要是四方相为主的多晶结构，并且随着氧分压的增加，结晶度、折射率以及弱吸收均逐渐降低。薄膜的激光损伤阈值开始随着氧分压增加从18．5J／cm^2逐渐增加，氧分压为9×10^-3Pa时达到最大，值为26．7J／cm^2，氧分压再增加时则又降低到17．5J／cm^2。由此可见，氧分压引起的薄膜微结构变化是ZrO