Studio delle proprieta ottiche ed elettriche di dispositivi led a confinamento quantico

In questa tesi viene descritto il funzionamento delle sorgenti di luce LED (Light Emitting Diode) a confinamento quantico, che rappresentano la nuova frontiera dell'illuminazione ad alta efficienza e durata. Nei capitoli introduttivi è descritta brevemente la storia dei LEDs dalla loro invenzione agli sviluppi più recenti. Il funzionamento di tali dispositivi fotonici è spiegato a partire dal concetto di sorgente di luce per elettroluminescenza, con particolare riferimento alle eterostrutture a confinamento quantico bidimensionale (quantum wells). I capitoli centrali riguardano i nitruri dei gruppi III-V, le cui caratteristiche e proprietà hanno permesso di fabbricare LEDs ad alta efficienza e ampio spettro di emissione, soprattutto in relazione al fatto che i LEDs a nitruri dei gruppi III-V emettono luce anche in presenza di alte densità di difetti estesi, nello specifico dislocazioni. I capitoli successivi sono dedicati alla presentazione del lavoro sperimentale svolto, che riguarda la caratterizzazione elettrica, ottica e strutturale di LEDs a confinamento quantico basati su nitruri del gruppo III-V GaN e InGaN, cresciuti nei laboratori di Cambridge dal Center for Gallium Nitride. Lo studio ha come obiettivo finale il confronto dei risultati ottenuti su LEDs con la medesima struttura epitassiale, ma differente densità di dislocazioni, allo scopo di comprendere meglio il ruolo che tali difetti estesi ricoprono nella determinazione dell'effcienza delle sorgenti di luce LED. L’ultimo capitolo riguarda la diffrazione a raggi X dal punto di vista teorico, con particolare attenzione ai metodi di valutazioni dello strain reticolare nei wafer a nitruri, dal quale dipende la densità di dislocazioni.

Nonlinear Characterization and Modelling of GaN HEMTs for Microwave Power Amplifier Applications

Semiconductors technologies are rapidly evolving driven by the need for higher performance demanded by applications. Thanks to the numerous advantages that it offers, gallium nitride (GaN) is quickly becoming the technology of reference in the field of power amplification at high frequency. The RF power density of AlGaN/GaN HEMTs (High Electron Mobility Transistor) is an order of magnitude higher than the one of gallium arsenide (GaAs) transistors. The first demonstration of GaN devices dates back only to 1993. Although over the past few years some commercial products have started to be available, the development of a new technology is a long process. The technology of AlGaN/GaN HEMT is not yet fully mature, some issues related to dispersive phenomena and also to reliability are still present. Dispersive phenomena, also referred as long-term memory effects, have a detrimental impact on RF performances and are due both to the presence of traps in the device structure and to self-heating effects. A better understanding of these problems is needed to further improve the obtainable performances. Moreover, new models of devices that take into consideration these effects are necessary for accurate circuit designs. New characterization techniques are thus needed both to gain insight into these problems and improve the technology and to develop more accurate device models. This thesis presents the research conducted on the development of new charac- terization and modelling methodologies for GaN-based devices and on the use of this technology for high frequency power amplifier applications.

Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes

We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky diodes for extreme ultraviolet (EUV) detection. AlGaN layers were grown on silicon wafers by molecular beam epitaxy with the conventional and inverted Schottky structure, where the undoped, active layer was grown before or after the n-doped layer, respectively. Different current mechanisms were observed in the two structures. The inverted Schottky diode was designed for the optimized backside sensitivity in the hybrid imagers. A cut-off wavelength of 280 nm was observed with three orders of magnitude intrinsic rejection ratio of the visible radiation. Furthermore, the inverted structure was characterized using a EUV source based on helium discharge and an open electrode design was used to improve the sensitivity. The characteristic He I and He II emission lines were observed at the wavelengths of 58.4 nm and 30.4 nm, respectively, proving the feasibility of using the inverted layer stack for EUV detection

High efficiency envelope tracking buck converter for RFPA using GaN HEMTs

—In this paper, application of a new technological solution for power switches based on Gallium Nitride and a filter design methodology for high efficiency Envelope Amplifier in RF transmitters are proposed. Comparing to Si MOSFETs, GaN HEMTs can provide higher efficiency of the Envelope Amplifier, due to better Figure Of Merit (lower product of on- resistance and gate charge). Benefits of their application were verified through the experimental results. The goal of the filter design is to generate the envelope reference with the minimum possible distortion and to improve the efficiency of the Amplifier, obtaining the optimum trade-off between conduction and switching losses.

Improved GaN-based HEMT performance by nanocrystalline diamond capping

As a wide-bandgap semiconductor, gallium nitride (GaN) is an attractive material for next-generation power devices. To date, the capabilities of GaN-based high electron mobility transistors (HEMTs) have been limited by self-heating effects (drain current decreases due to phonon scattering-induced carrier velocity reductions at high drain fields). Despite awareness of this, attempts to mitigate thermal impairment have been limited due to the difficulties involved with placing high thermal conductivity materials close to heat sources in the device. Heat spreading schemes have involved growth of AIGaN/GaN on single crystal or CVD diamond, or capping of fullyprocessed HEMTs using nanocrystalline diamond (NCD). All approaches have suffered from reduced HEMT performance or limited substrate size. Recently, a "gate after diamond" approach has been successfully demonstrated to improve the thermal budget of the process by depositing NCD before the thermally sensitive Schottky gate and also to enable large-area diamond implementation.

Profiling the temperature distribution in AlGaN/GaN HEMTs with nanocrystalline diamond heat spreading layers

Reduced performance in Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) as a result of self-heating has been well-documented. A new approach, termed “diamond-before-gate" is shown to improve the thermal budget of the deposition process and enables large area diamond without degrading the gate metal NCD capped devices had a 20% lower channel temperature at equivalent power dissipation.

Amplificador de potencia Clase F en banda L basado en tecnología GaN

This paper reports a high efficiency class-F power amplifier based on a gallium nitride high electron mobility transistor (GaN-HEMT), which is designed at the L band of 1640 MHz. The design is based on source and load pull measurements. During the design process, the parasitics of the package of the device are also taken into account in order to achieve the optimal class-F load condition at the intrinsic drain of the transistor. The fabricated class-F power amplifier achieved a maximum drain efficiency (DE) of 77.8% and a output power of 39.6 W on a bandwidth of 280 MHz. Simulation and measurement results have shown good agreement.

Dual Active Bridge based Battery Charger for Plug-in Hybrid Electric Vehicle with Charging Current Containing Low Frequency Ripple

High power density is strongly preferable for the on-board battery charger of Plug-in Hybrid Electric Vehicle (PHEV). Wide band gap devices, such as Gallium Nitride HEMTs are being explored to push to higher switching frequency and reduce passive component size. In this case, the bulk DC link capacitor of AC-DC Power Factor Correction (PFC) stage, which is usually necessary to store ripple power of two times the line frequency in a DC current charging system, becomes a major barrier on power density. If low frequency ripple is allowed in the battery, the DC link capacitance can be significantly reduced. This paper focuses on the operation of a battery charging system, which is comprised of one Full Bridge (FB) AC-DC stage and one Dual Active Bridge (DAB) DC-DC stage, with charging current containing low frequency ripple at two times line frequency, designated as sinusoidal charging. DAB operation under sinusoidal charging is investigated. Two types of control schemes are proposed and implemented in an experimental prototype. It is proved that closed loop current control is the better. Full system test including both FB AC-DC stage and DAB DC-DC stage verified the concept of sinusoidal charging, which may lead to potentially very high power density battery charger for PHEV.

Photoconductivity and Electro-Optical Properties of Wide Band Gap Metal Oxides

The PhD activity described in this Thesis was focused on the study of metal-oxide wide-bandgap materials, aiming at fabricating new optoelectronic devices such as solar-blind UV photodetectors, high power electronics, and gas sensors. Photocurrent spectroscopy and DC photocurrent time evolution were used to investigate the performance of prototypes under different atmospheres, temperatures and excitation wavelengths (or dark conditions). Cathodoluminescence, absorption spectroscopy, XRD and SEM were used to assess structural, morphologic, electrical and optical properties of materials. This thesis is divided into two main sections, each describing the work done on a different metal-oxide semiconductor. 1) MOVPE-grown Ga2O3 thin films for UV solar-blind photodetectors and high power devices The semiconducting oxides, among them Ga2O3, have been employed for several decades as transparent conducting oxide (TCO) electrodes for fabrication of solar cells, displays, electronic, and opto-electronic devices. The interest was mainly confined to such applications, as these materials tend to grow intrinsically n-type, and attempts to get an effective p-type doping has consistently failed. The key requirements of TCO electrodes are indeed high electrical conductivity and good transparency, while crystallographic perfection is a minor issue. Furthermore, for a long period no high-quality substrates and epi-layers were available, which in turn impeded the development of a truly full-oxide electronics. Recently, Ga2O3 has attracted renewed interest, as large single crystals and high-quality homo- and hetero-epitaxial layers became available, which paved the way to novel application areas. Our research group spent the last two years in developing a low temperature (500-700°C) MOVPE growth procedure to obtain thin films of Ga2O3 on different substrates (Dept. of Physics and IMEM-CNR at UNIPR). We obtained a significant result growing on oriented sapphire epitaxial films of high crystalline, undoped, pure phase -Ga2O3 (hexagonal). The crystallographic properties of this phase were investigated by XRD, in order to clarify the lattice parameters of the hexagonal cell. First design and development of solar blind UV photodetectors based on -phase was carried out and the optoelectronic performance is evaluated by means of photocurrent spectroscopy. The UV-response is adequately fast and reliable to render this unusual phase a subject of great interest for future applications. The availability of a hexagonal phase of Ga2O3 stable up to 700°C, belonging to the same space group of gallium nitride, with high crystallinity and tunable electrical properties, is intriguing in view of the development of nitride-based devices, by taking advantage of the more favorable symmetry and epitaxial relationships with respect to the monoclinic β-phase. In addition, annealing at temperatures higher than 700°C demonstrate that the hexagonal phase converts totally in the monoclinic one. 2) ZnO nano-tetrapods: charge transport mechanisms and time-response in optoelectronic devices and sensors Size and morphology of ZnO at the nanometer scale play a key role in tailoring its physical and chemical properties. Thanks to the possibility of growing zinc oxide in a variety of different nanostructures, there is a great variety of applications, among which gas sensors, light emitting diodes, transparent conducting oxides, solar cells. Even if the operation of ZnO nanostructure-based devices has been recently demonstrated, the mechanisms of charge transport in these assembly is still under debate. The candidate performed an accurate investigation by photocurrent spectroscopy and DC-photocurrent time evolution of electrical response of both single-tetrapod and tetrapod-assembly devices. During the research done for this thesis, a thermal activation energy enables the performance of samples at high temperatures (above about 300°C). The energy barrier is related to the leg-to-leg interconnection in the assembly of nanotetrapods. Percolation mechanisms are responsible for both the very slow photo-response (minutes to hours or days) and the significant persistent photocurrent. Below the bandgap energy, electronic states were investigated but their contribution to the photocurrent are two-three order of magnitude lower than the band edge. Such devices are suitable for employ in photodetectors as well as in gas sensors, provided that the mechanism by which the photo-current is generated and gas adsorption on the surface modify the conductivity of the material are known.

Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED

Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance. © 2014 SPIE.

Engineering thin films of magnetic alloys and semiconductor oxides at the nanoscale

The thesis aims to exploit properties of thin films for applications such as spintronics, UV detection and gas sensing. Nanoscale thin films devices have myriad advantages and compatibility with Si-based integrated circuits processes. Two distinct classes of material systems are investigated, namely ferromagnetic thin films and semiconductor oxides. To aid the designing of devices, the surface properties of the thin films were investigated by using electron and photon characterization techniques including Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), grazing incidence X-ray diffraction (GIXRD), and energy-dispersive X-ray spectroscopy (EDS). These are complemented by nanometer resolved local proximal probes such as atomic force microscopy (AFM), magnetic force microscopy (MFM), electric force microscopy (EFM), and scanning tunneling microscopy to elucidate the interplay between stoichiometry, morphology, chemical states, crystallization, magnetism, optical transparency, and electronic properties. Specifically, I studied the effect of annealing on the surface stoichiometry of the CoFeB/Cu system by in-situ AES and discovered that magnetic nanoparticles with controllable areal density can be produced. This is a good alternative for producing nanoparticles using a maskless process. Additionally, I studied the behavior of magnetic domain walls of the low coercivity alloy CoFeB patterned nanowires. MFM measurement with the in-plane magnetic field showed that, compared to their permalloy counterparts, CoFeB nanowires require a much smaller magnetization switching field , making them promising for low-power-consumption domain wall motion based devices. With oxides, I studied CuO nanoparticles on SnO2 based UV photodetectors (PDs), and discovered that they promote the responsivity by facilitating charge transfer with the formed nanoheterojunctions. I also demonstrated UV PDs with spectrally tunable photoresponse with the bandgap engineered ZnMgO. The bandgap of the alloyed ZnMgO thin films was tailored by varying the Mg contents and AES was demonstrated as a surface scientific approach to assess the alloying of ZnMgO. With gas sensors, I discovered the rf-sputtered anatase-TiO2 thin films for a selective and sensitive NO2 detection at room temperature, under UV illumination. The implementation of UV enhances the responsivity, response and recovery rate of the TiO2 sensor towards NO2 significantly. Evident from the high resolution XPS and AFM studies, the surface contamination and morphology of the thin films degrade the gas sensing response. I also demonstrated that surface additive metal nanoparticles on thin films can improve the response and the selectivity of oxide based sensors. I employed nanometer-scale scanning probe microscopy to study a novel gas senor scheme consisting of gallium nitride (GaN) nanowires with functionalizing oxides layer. The results suggested that AFM together with EFM is capable of discriminating low-conductive materials at the nanoscale, providing a nondestructive method to quantitatively relate sensing response to the surface morphology.

High Frequency Class DE Converter Using a Multilayer Coreless PCB Transformer

In modern power electronics equipment, it is desirable to design a low profile, high power density, and fast dynamic response converter. Increases in switching frequency reduce the size of the passive components such as transformers, inductors, and capacitors which results in compact size and less requirement for the energy storage. In addition, the fast dynamic response can be achieved by operating at high frequency. However, achieving high frequency operation while keeping the efficiency high, requires new advanced devices, higher performance magnetic components, and new circuit topology. These are required to absorb and utilize the parasitic components and also to mitigate the frequency dependent losses including switching loss, gating loss, and magnetic loss. Required performance improvements can be achieved through the use of Radio Frequency (RF) design techniques. To reduce switching losses, resonant converter topologies like resonant RF amplifiers (inverters) combined with a rectifier are the effective solution to maintain high efficiency at high switching frequencies through using the techniques such as device parasitic absorption, Zero Voltage Switching (ZVS), Zero Current Switching (ZCS), and a resonant gating. Gallium Nitride (GaN) device technologies are being broadly used in RF amplifiers due to their lower on- resistance and device capacitances compared with silicon (Si) devices. Therefore, this kind of semiconductor is well suited for high frequency power converters. The major problems involved with high frequency magnetics are skin and proximity effects, increased core and copper losses, unbalanced magnetic flux distribution generating localized hot spots, and reduced coupling coefficient. In order to eliminate the magnetic core losses which play a crucial role at higher operating frequencies, a coreless PCB transformer can be used. Compared to the conventional wire-wound transformer, a planar PCB transformer in which the windings are laid on the Printed Board Circuit (PCB) has a low profile structure, excellent thermal characteristics, and ease of manufacturing. Therefore, the work in this thesis demonstrates the design and analysis of an isolated low profile class DE resonant converter operating at 10 MHz switching frequency with a nominal output of 150 W. The power stage consists of a class DE inverter using GaN devices along with a sinusoidal gate drive circuit on the primary side and a class DE rectifier on the secondary side. For obtaining the stringent height converter, isolation is provided by a 10-layered coreless PCB transformer of 1:20 turn’s ratio. It is designed and optimized using 3D Finite Element Method (FEM) tools and radio frequency (RF) circuit design software. Simulation and experimental results are presented for a 10-layered coreless PCB transformer operating in 10 MHz.

High bandwidth freestanding semipolar (11–22) InGaN/GaN light-emitting diodes

Freestanding semipolar (11–22) indium gallium nitride (InGaN) multiplequantum-well light-emitting diodes (LEDs) emitting at 445 nm have been realized by the use of laser lift-off (LLO) of the LEDs from a 50- m-thick GaN layer grown on a patterned (10–12) r -plane sapphire substrate (PSS). The GaN grooves originating from the growth on PSS were removed by chemical mechanical polishing. The 300 m × 300 m LEDs showed a turn-on voltage of 3.6 V and an output power through the smooth substrate of 0.87 mW at 20 mA. The electroluminescence spectrum of LEDs before and after LLO showed a stronger emission intensity along the [11–23]InGaN/GaN direction. The polarization anisotropy is independent of the GaN grooves, with a measured value of 0.14. The bandwidth of the LEDs is in excess of 150 MHz at 20 mA, and back-to-back transmission of 300 Mbps is demonstrated, making these devices suitable for visible light communication (VLC) applications.

Evaluation of the In desorption during the capped process in diluted nitride In(Ga)As quantum dots

Diluted nitride self-assembled In(Ga)AsN quantum dots (QDs) grown on GaAs substrates are potential candidates to emit in the windows of maximum transmittance for optical fibres (1.3-1.55 μm). In this paper, we analyse the effect of nitrogen addition on the indium desorption occurring during the capping process of InxGa1−xAs QDs (x = l and 0.7). The samples have been grown by molecular beam epitaxy and studied through transmission electron microscopy (TEM) and photoluminescence techniques. The composition distribution inside the dots was determined by statistical moiré analysis and measured by energy dispersive X-ray spectroscopy. First, the addition of nitrogen in In(Ga)As QDs gave rise to a strong redshift in the emission peak, together with a large loss of intensity and monochromaticity. Moreover, these samples showed changes in the QDs morphology as well as an increase in the density of defects. The statistical compositional analysis displayed a normal distribution in InAs QDs with an average In content of 0.7. Nevertheless, the addition of Ga and/or N leads to a bimodal distribution of the Indium content with two separated QD populations. We suggest that the nitrogen incorporation enhances the indium fixation inside the QDs where the indium/gallium ratio plays an important role in this process. The strong redshift observed in the PL should be explained not only by the N incorporation but also by the higher In content inside the QDs