Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED
| Contribuinte(s) |
Chyi, Jen-Inn Nanishi, Yasushi Morkoç, Hadis Piprek, Joachim Yoon, Euijoon Fujioka, Hiroshi |
|---|---|
| Data(s) |
2014
|
| Resumo |
Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance. © 2014 SPIE. |
| Formato |
application/pdf |
| Identificador |
Titkov, Ilya E.; Yadav, Amit; Zerova, Vera L.; Zulonas, Modestas; Tsatsulnikov, Andrey F.; Lundin, Wsevolod V.; Sakharov, Alexey V. and Rafailov, Edik U. (2014). Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED. IN: Gallium nitride materials and devices IX. Chyi, Jen-Inn; Nanishi, Yasushi; Morkoç, Hadis; Piprek, Joachim; Yoon, Euijoon and Fujioka, Hiroshi (eds) SPIE proceedings . Bellingham, WA (US): SPIE. |
| Publicador |
SPIE |
| Relação |
http://eprints.aston.ac.uk/25570/ |
| Tipo |
Book Section NonPeerReviewed |
