Nonlinear optical response in a zincblende GaN cylindrical quantum dot with donor impurity center


Autoria(s): Hoyos J.H.; Correa J.D.; Mora-Ramos M.E.; Duque C.A.
Contribuinte(s)

Departamento de Ciencias Básicas, Universidad de Medellín, Cra. 87 No. 30-65, Medellín, Colombia

Centro de Investigación en Ciencias, Instituto de Investigación en Ciencias Básicas y Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos, Mexico

Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia

Data(s)

2016

23/06/2016

23/06/2016

Identificador

9214526

http://hdl.handle.net/11407/2281

10.1016/j.physb.2015.12.038

Idioma(s)

eng

Publicador

Elsevier

Relação

Physica B: Condensed Matter Volume 484, 1 March 2016, Pages 73–82

http://www.sciencedirect.com/science/article/pii/S0921452615303707

Direitos

info:eu-repo/semantics/restrictedAccess

restrictedAccess

Fonte

Scopus

Palavras-Chave #Electric fields #Electromagnetic wave absorption #Gallium nitride #Hydraulics #Hydrostatic pressure #Light absorption #Nanocrystals #Point defects #Potential energy #Quantum optics #Quantum theory #Semiconductor quantum dots #Semiconductor quantum wells #Zinc sulfide #Cylindrical quantum dot #Dielectric susceptibility #Donor impurity state #Effective mass approximation #Nonlinear optical absorption #Nonlinear optical absorption coefficients #Nonlinear optical response #Rotating wave approximations #Nonlinear optics
Tipo

info:eu-repo/semantics/article

Article in Press