Nonlinear optical response in a zincblende GaN cylindrical quantum dot with donor impurity center
Contribuinte(s) |
Departamento de Ciencias Básicas, Universidad de Medellín, Cra. 87 No. 30-65, Medellín, Colombia Centro de Investigación en Ciencias, Instituto de Investigación en Ciencias Básicas y Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos, Mexico Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia |
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Data(s) |
2016
23/06/2016
23/06/2016
|
Identificador |
9214526 http://hdl.handle.net/11407/2281 10.1016/j.physb.2015.12.038 |
Idioma(s) |
eng |
Publicador |
Elsevier |
Relação |
Physica B: Condensed Matter Volume 484, 1 March 2016, Pages 73–82 http://www.sciencedirect.com/science/article/pii/S0921452615303707 |
Direitos |
info:eu-repo/semantics/restrictedAccess restrictedAccess |
Fonte |
Scopus |
Palavras-Chave | #Electric fields #Electromagnetic wave absorption #Gallium nitride #Hydraulics #Hydrostatic pressure #Light absorption #Nanocrystals #Point defects #Potential energy #Quantum optics #Quantum theory #Semiconductor quantum dots #Semiconductor quantum wells #Zinc sulfide #Cylindrical quantum dot #Dielectric susceptibility #Donor impurity state #Effective mass approximation #Nonlinear optical absorption #Nonlinear optical absorption coefficients #Nonlinear optical response #Rotating wave approximations #Nonlinear optics |
Tipo |
info:eu-repo/semantics/article Article in Press |