998 resultados para Z


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Several studies have suggested that Otu domain had de-ubiquitinating activity and Tudor domain was important for the formation of germ cells. Here, we reported a novel zebrafish ovary-specific gene containing Otu and Tudor domain, z-otu, which was expressed at stages I-III oocytes and embryonic stages from zygotes to early blastula during embryonic cells maintained their totipotency. Therefore, z-otu might link the ubiquitin signaling pathway to early oogenesis and maintaining the totipotency of embryonic cell. (c) 2005 Elsevier B.V. All rights reserved.

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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-06-04T08:36:34Z No. of bitstreams: 1 dspace.cfg: 33388 bytes, checksum: ac9630d3fdb36a155287a049e8b34eb7 (MD5)

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Based on Fresnel-Mrchhoff diffraction theory, a diffraction model of nonlinear optical media interacting with a Gaussian beam has been set up that can interpret the Z-scan phenomenon in a new way. This theory not only is consistent with the conventional Z-scan theory for a small nonlinear phase shift but also can be used for larger nonlinear phase shifts. Numerical computations indicate that the shape of the Z-scan curve is greatly affected by the value of the nonlinear phase shift. The symmetric dispersionlike Z-scan curve is valid only for small nonlinear p base shifts (\Deltaphi(0)\ < pi), but, with increasingly larger nonlinear phase shifts, the valley of the transmittance is severely suppressed and the peak is greatly enhanced. The power output through the aperture will oscillate with increasing nonlinear phase shift caused by the input laser power. The aperture transmittance will attenuate and saturate with increasing Kerr constant. (C) 2003 Optical Society of America.

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采用射频磁控反应溅射技术与热退火处理制备了nc-Si/SiN_x多量子阱材料.对样品进行了小角度XRD、Raman光谱、吸收光谱测试,研究了其结构和光学性质.采用皮秒脉冲激光单光束Z-扫描技术研究了样品在非共振吸收区的三阶非线性光学特性.实验结果表明,其非线性折射率为负值,非线性吸收属于双光子吸收.由实验数据计算得材料三阶非线性极化率为7.50×10~(-8)esu,该值比体硅材料的三阶非线性极化率大4个数量级.对材料光学非线性产生的机理进行了探讨,认为材料的非线性极化率的增加来源于材料量子限制效应增强.

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国家自然科学基金

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于2010-11-23批量导入

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一种多步生长方法应用于GaAs衬底上的In_xGa_(1-x)As缓冲层的MOCVD生长.在这种In_xGa_(1-x)As缓冲层上生长的In_yGa_(1-y)As/Al_zGa_(1-z)As/GaAs/Al_zGa_(1-x)As双垫垒量子阱材料表现出了很好的晶格特性和光学性质.超晶格的室温光伏谱中出现很强的22H高阶机制吸收峰,表明超晶格界面质量很好.主要应用X射线双晶衍射方法,给出了样品中各层的应变状态.据此,合理地解释了样品的光学测试结果.