Room-temperature highly anisotropic ferromagnetism and uniaxial spin amplification in (In,Mn)As quantum dots

The hole-mediated ferromagnetism in (In,Mn)As quantum dots is investigated using the k center dot p method and the mean field model. It is found that the (In,Mn)As quantum dot can be ferromagnetic at room temperature when there is one hole in the dot. For the spherical quantum dots, the Curie temperature decreases as the diameter increases, and increases as the effective composition of magnetic ions increases. It is interesting to find that the (In,Mn)As oblate quantum dot has highly anisotropic Zeeman splitting and ferromagnetism due to the spin-orbit coupling effect, which can be used as an uniaxial spin amplifier. (c) 2008 American Institute of Physics.

Crystallographic plane tuning of charge and spin transport in semiconductor quantum wires

We investigate theoretically the charge and spin transport in quantum wires grown along different crystallographic planes in the presence of the Rashba spin-orbit interaction (RSOI) and the Dresselhaus spin-orbit interaction (DSOI). We find that changing the crystallographic planes leads to a variation of the anisotropy of the conductance due to a different interplay between the RSOI and DSOI, since the DSOI is induced by bulk inversion asymmetry, which is determined by crystallographic plane. This interplay depends sensitively on the crystallographic planes, and consequently leads to the anisotropic charge and spin transport in quantum wires embedded in different crystallographic planes.

Hole Spin Relaxation in an Ultrathin InAs Monolayer

We investigate the spin relaxation time of holes in an ultrathin neutral InAs monolayer (1.5 ML) and compare with that of electrons, using polarization-dependent time-resolved photoluminescence (TRPL) experiments. With excitation energies above the GaAs gap, we observe a rather slow relaxation of holes (tau(1h) = 196 +/- 17 ps) that is in the magnitude similar to electrons (tau(1e) = 354 +/- 32 ps) in this ultrathin sample. The results are in good agreement with earlier theoretical prediction, and the phonon scattering due to spin-orbit coupling is realized to play a dominant role in the carrier spin kinetics.

Charge and spin currents in a three-terminal mesoscopic ring

We theoretically investigate the charge and spin currents in a three-terminal mesoscopic ring in the presence of a uniform and nonuniform Rashba spin-orbit interaction (SOI). It is shown that a fully spin-polarized charge current and a pure spin current can be generated by tuning the probe voltages and/or the strength of the Rashba SOI. The charge and spin currents oscillate as the strength of the Rashba SOI increases induced by the spin quantum interference. The ratio of probe voltages oscillates synchronously with the pure spin current as the strength of the Rashba SOI increases in a nonuniform Rashba ring, while it remains constant in a uniform Rashba ring. We demonstrate theoretically that a three-terminal uniform Rashba ring can be used as a spin polarizer and/or spin flipper for different spin injections, and a nonuniform Rashba ring could allow us to detect the pure spin current electrically. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3054322]

Dynamics of spin-dependent tunneling through a semiconductor double-barrier structure

The dynamics of spin-dependent tunneling through a nonmagnetic semiconductor double-barrier structure is studied including the k(3) Dresselhaus spin orbit coupling is solved by the time-dependent Schrodinger equation with a developed method for the finite-difference relaxation. The resonant peak and quasibound level lifetime are determined by the in-plane wave vector and the applied electric field. The buildup time and decay lifetime of resonant probability amplitude are different for the spin-down and spin-up electrons due to the Dresselhaus spin-orbit coupling. Further investigation shows that the steady spin-polarization in both the well and collector regions has been obtained in the time domain. (C) 2007 American Institute of Physics.

Observation of electric current induced by optically injected spin current

Linearly polarized light at normal incidence injects a spin current into a strip of two-dimensional electron gas with Rashba spin-orbit coupling. The authors report observation of an electric current when such light is shed on the vincinity of the junction in a crossbar-shaped InGaAs/InAlAs quantum well Rashba system. The polarization dependence of this electric current was experimentally observed to be the same as that of the spin current. The authors attribute the observed electric current to the scattering of the optically injected spin current at the crossing. (c) 2007 American Institute of Physics.

Spectral dependence of spin photocurrent and current-induced spin polarization in an InGaAs/InAlAs two-dimensional electron gas

The converse effects of spin photocurrent and current induced spin polarization are experimentally demonstrated in a two-dimensional electron gas system with Rashba spin splitting. Their consistency with the strength of the Rashba coupling as measured for the same system from beating of the Shubnikov-de Haas oscillations reveals a unified picture for the spin photocurrent, current-induced spin-polarization, and spin-orbit coupling. In addition, the observed spectral inversion of the spin photocurrent indicates a system with dominating structure inversion asymmetry.

Spin-polarized transport in one-dimensional waveguide structures with spatially-periodic electronic and magnetic fields

We investigate theoretically the spin-polarized transport in one-dimensional waveguide structure with spatially-periodic electronic and magnetic fields. The interplay of the spin-orbit interaction and in-plane magnetic field significantly modifies the spin-dependent transmission and the spin polarization. The in-plane magnetic fields increase the strength of the Rashba spin-orbit coupling effect for the electric fields along y axis and decrease this effect for reversing the electric fields, even counteract the Rashba spin-orbit coupling effect. It is very interesting to find that we may deduce the strength of the Rashba effect through this phenomenon. (c) 2005 Elsevier Ltd. All rights reserved.

Beam-target double-spin asymmetry A{LT} in charged pion production from deep inelastic scattering on a transversely polarized {3}He target at 1.4

We report the first measurement of the double-spin asymmetry A{LT} for charged pion electroproduction in semi-inclusive deep-inelastic electron scattering on a transversely polarized {3}He target. The kinematics focused on the valence quark region, 0.16spin-orbit correlations. Our results indicate a positive azimuthal asymmetry for π{-} production on {3}He and the neutron, while our π{+} asymmetries are consistent with zero.

The Doppler shadow of WASP-3b. A tomographic analysis of Rossiter-McLaughlin observations

Context. Hot-Jupiter planets must form at large separations from their host stars where the temperatures are cool enough for their cores to condense. They then migrate inwards to their current observed orbital separations. Different theories of how this migration occurs lead to varying distributions of orbital eccentricity and the alignment between the rotation axis of the star and the orbital axis of the planet. Aims: The spin-orbit alignment of a transiting system is revealed via the Rossiter-McLaughlin effect, which is the anomaly present in the radial velocity measurements of the rotating star during transit due to the planet blocking some of the starlight. In this paper we aim to measure the spin-orbit alignment of the WASP-3 system via a new way of analysing the Rossiter-McLaughlin observations. Methods: We apply a new tomographic method for analysing the time variable asymmetry of stellar line profiles caused by the Rossiter-McLaughlin effect. This new method eliminates the systematic error inherent in previous methods used to analyse the effect. Results: We find a value for the projected stellar spin rate of v sin i = 13.9 ± 0.03 km s-1 which is in agreement with previous measurements but has a much higher precision. The system is found to be well aligned, with ? = 5-5+6° which favours an evolutionary history for WASP-3b involving migration through tidal interactions with a protoplanetary disc. From comparison with isochrones we put an upper limit on the age of the star of 2 Gyr.

Investigation of Frustrated Quasi-One-Dimensional Quantum Spin-Chain Materials

Copper arsenite CuAs2O4 and Copper antimonite CuSb2O4 are S=1/2 (Cu2+ 3d9 electronic configuration) quasi-one-dimensional quantum spin-chain compounds. Both compounds crystallize with tetragonal structures containing edge sharing CuO6 octahedra chains which experience Jahn-Teller distortions. The basal planes of the octahedra link together to form CuO2 ribbon-chains which harbor Cu2+ spin-chains. These compounds are magnetically frustrated with competing nearest-neighbour and next-nearest-neighbour intrachain spin-exchange interactions. Despite the similarities between CuAs2O4 and CuSb2O4, they exhibit very different magnetic properties. In this thesis work, the physical properties of CuAs2O4 and CuSb2O4 are investigated using a variety of experimental techniques which include x-ray diffraction, magnetic susceptibility measurements, heat capacity measurements, Raman spectroscopy, electron paramagnetic resonance, neutron diffraction, and dielectric capacitance measurements. CuAs2O4 exhibits dominant ferromagnetic nearest-neighbour and weaker antiferromagnetic next-nearest-neighbour intrachain spin-exchange interactions. The ratio of the intrachain interactions amounts to Jnn/Jnnn = -4.1. CuAs2O4 was found to order with a ferromagnetic groundstate below TC = 7.4 K. An extensive physical characterization of the magnetic and structural properties of CuAs2O4 was carried out. Under the effect of hydrostatic pressure, CuAs2O4 was found to undergo a structural phase transition at 9 GPa to a new spin-chain structure. The structural phase transition is accompanied by a severe alteration of the magnetic properties. The high-pressure phase exhibits dominant ferromagnetic next-nearest-neighbour spin-exchange interactions and weaker ferromagnetic nearest-neighbour interactions. The ratio of the intrachain interactions in the high-pressure phase was found to be Jnn/Jnnn = 0.3. Structural and magnetic characterizations under hydrostatic pressure are reported and a relationship between the structural and magnetic properties was established. CuSb2O4 orders antiferromagnetically below TN = 1.8 K with an incommensurate helicoidal magnetic structure. CuSb2O4 is characterized by ferromagnetic nearest-neighbour and antiferromagnetic next-nearest-neighbour spin-exchange interactions with Jnn/Jnnn = -1.8. A (H, T) magnetic phase diagram was constructed using low-temperature magnetization and heat capacity measurements. The resulting phase diagram contains multiple phases as a consequence of the strong intrachain magnetic frustration. Indications of ferroelectricity were observed in the incommensurate antiferromagnetic phase.

A variational method for the calculation of spin-rovibronic energy levels of any triatomic molecule in an electronic triplet state

The triatomic spin-rovibronic variational code RVIB3 has been extended to include the effect of two uncoupled electrons, for both (3)Sigma(-) and (3)Pi (Renner-Teller) electronic states. The spin-orbital-rotational kinetic energy is included in the usual way, via terms (J+L+S). The phenomenological terms AL.S and lambda 2/3(3S(z)(2)) are introduced to reproduce the 3 spin-orbit and spin-spin splittings, respectively. Calculations are performed to evaluate the spin-rovibronic energy levels of CCO (X) over tilde (3) Sigma(-) and CCO (A) over tilde (3) Pi for which the Born-Oppenheimer potentials are derived from high-accuracy ab initio calculations.

Spin Hall Effect in Symmetric Wells with Two Subbands

We investigate the spin Hall conductivity sigma (xy) (z) of a clean 2D electron gas formed in a two-subband well. We determine sigma (xy) (z) as arising from the inter-subband induced spin-orbit (SO) coupling eta (Calsaverini et al., Phys. Rev. B 78:155313, 2008) via a linear-response approach due to Rashba. By self-consistently calculating eta for realistic wells, we find that sigma (xy) (z) presents a non-monotonic (and non-universal) behavior and a sign change as the Fermi energy varies between the subband edges. Although our sigma (xy) (z) is very small (i.e., a parts per thousand(a)`` e/4 pi aEuro(3)), it is non-zero as opposed to linear-in-k SO models.

Spin-polarization effects in homogeneous and non-homogeneous diluted magnetic semiconductor heterostructures

Spin polarization is a key characteristic in developing spintronic devices. Diluted magnetic heterostructures (DMH), where subsequent layers of conventional and diluted magnetic semiconductors (DMS) are alternate, are one of the possible ways to obtain it. Si being the basis of modern electronics, Si or other group-IV DMH can be used to build spintronic devices directly integrated with conventional ones. In this work we study the physical properties and the spin-polarization effects of p-type DMH based in group-IV semiconductors (Si, Ge, SiGe, and SiC), by performing self-consistent (k) over right arrow . (p) over right arrow calculations in the local spin density approximation. We show that high spin polarization can be maintained in these structures below certain values of the carrier concentrations. Full spin polarization is attained in the low carrier concentration regime for carrier concentrations in the DMS layer up to similar to 2.0 x 10(19) cm(-3) for Si and up to similar to 6.0 x 10(19) cm(-3) for SiC. Partial, but still important spin polarization can be achieved for all studied group-IV DMH, with the exception of Ge for carrier concentrations up to 6.0 x 10(19) cm(-3). The role played by the effective masses and the energy splitting of the spin-orbit split-off hole bands is also discussed throughout the paper.

Spin and pseudospin symmetries in the antinucleon spectrum of nuclei

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)